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All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
COMPONENTS: TRANSISTOR
PART NUMBER: QST6TR
MANUFACTURER: ROHM
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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TRANSISTOR MODEL
PSpice model parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse Early Voltage Characteristic
Reverse
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Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
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Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
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C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
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V1
-2V
0
I1
0Adc
U1QST6TR
IC(X_U1.Q_Q1)
-1.0mA -10A
IC(X_U1.Q_Q1)/ I(U1:3)
10
100
1.0K
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
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Comparison Graph
Ic(A) hFE
Error(%) Measurement Simulation
-0.001 580.000 576.389 -0.623
-0.002 580.000 574.400 -0.966
-0.005 575.000 570.656 -0.755
-0.010 565.000 566.327 0.235
-0.020 560.000 559.402 -0.107
-0.050 535.000 542.453 1.393
-0.100 514.000 519.397 1.050
-0.200 480.000 483.618 0.754
-0.500 430.000 415.761 -3.311
-1.000 365.000 353.960 -3.025
-2.000 290.000 290.079 0.027
Circuit Simulation Result
Simulation Result
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VC
I1
0Adc
0
F1
F20
U1QST6TR
IC(X_U1.Q_Q1)
-1.0mA -10A
VC(X_U1.Q_Q1)
-1.0mV
-10V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
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Comparison Graph
IC(A) VCE(sat)(V)
Error(%) Measurement Simulation
-0.001 -0.0043 -0.0044 1.1628
-0.002 -0.0045 -0.0046 1.1111
-0.005 -0.0050 -0.0051 1.8000
-0.010 0.0058 -0.0059 1.2069
-0.020 -0.0071 -0.0073 2.2535
-0.050 -0.0110 -0.0108 -1.4545
-0.100 -0.0165 -0.0162 -1.8182
-0.200 -0.0270 -0.0262 -2.9630
-0.500 -0.0565 -0.0547 -3.2389
-1.000 -0.1000 -0.1006 0.6000
-2.000 -0.1850 -0.1911 3.2757
Circuit Simulation Result
Simulation Result
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VC
I1
0Adc
0
F1
F
20
U1QST6TR
IC(X_U1.Q_Q1)
-1.0mA -10A
VB(X_U1.Q_Q1)
-1.0mV
-10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
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Comparison Graph
IC(A) VBE(sat)(V)
Error(%) Measurement Simulation
-0.001 -0.780 -0.768 -1.538
-0.002 -0.785 -0.786 0.106
-0.005 -0.795 -0.809 1.761
-0.010 -0.815 -0.827 1.472
-0.020 -0.825 -0.846 2.545
-0.050 -0.850 -0.871 2.471
-0.100 -0.870 -0.890 2.299
-0.200 -0.890 -0.909 2.135
-0.500 -0.910 -0.938 3.077
-1.000 -0.930 -0.962 3.441
-2.000 -0.960 -0.992 3.302
Circuit Simulation Result
Simulation Result
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V1
TD = 1u
TF = 10nsPW = 20usPER = 50us
V1 = -7.5
TR = 10ns
V2 = 5
R2
63
R3
75
RL
10
0
VCC
-10
D1
D1N5817D2
D1N5817
L2
50nH
1 2L1
30nH
1 2
U1
QST6TR
R1
50
Time
0s 0.2us 0.6us 1.0us 1.4us 1.8us
1 V(R1:2) 2 V(U1:6)
-8.0V
-7.0V
-6.0V
-5.0V
-4.0V
-3.0V
-2.0V
-1.0V
0V
1.0V
2.0V
3.0V
4.0V
5.0V
6.0V
7.0V
8.0V1
-20V
-10V
0V
10V
20V2
>>
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tf (ns) 10.000 10.321 3.210
tstg (ns) 160.000 158.118 -1.176
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Switching Characteristics Reference
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0
+-
H1
H
0
I1
0Adc
1Aac+
-
G1
G
GAIN = 1e6
0IC
0
0
Vce
-2Vdc
0
F1
F 0
U1
QST6TR
U2
QST6TR
0
Ic
1m
V_Ic
-1.0m -10
ZeroCross(DB(I(U1:2)))
10M
100M
1.0G
Ft - IC Characteristics
IC(A) FT(MHz)
Error(%) Measurement Simulation
-0.200 405.000 399.480 -1.363
Circuit Simulation Result
Evaluation Circuit
Simulation Result
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V1
-5VdcI1
0Adc
0
U1QST6TR
V_V1
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(U1:5)
0A
-0.1A
-0.2A
-0.3A
-0.4A
-0.5A
-0.6A
-0.7A
-0.8A
-0.9A
-1.0A
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
IB=-0
-200uA
-400uA
-600uA
-800uA
-1mA
-1.4mA
-1.6mA
-1.8mA
-1.2mA
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Output Characteristics Reference