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ADVANCED MASK ALIGNER LITHOGRAPHY (AMALITH)
Photolithography Enhancement for SUSS Mask Aligners
SÜSS MicroTec AG, www.suss.com
SUSS MicroOptics SA, www.suss.ch, info@suss.ch
1969: MJB3 1985: MA150 2013: LithoPack Gen2
Mask Aligners are the loyal work horse in research and industry
since more than 50 years!
SUSS MASK ALIGNERS 1963 - 2013
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 2
LITHOGRAPHY IN 1980
Min. Feature Size [Half-Pitch]
Year Micron 1957 120
1963 30
1971 10
1974 6
1976 3
1982 1.5
1985 1.3
1989 1
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 3
HISTORIC LITHO TOOL PRICE [US$]
Mask Aligner
Front-End Litho Tool
EUVL
ASML 1950i
Every 4 years the price doubled
[1970 – 2010]
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 4
LITHOGRAPHY FOR LED MANUFACTURING
Market Share LED Exposure ToolsSUSS
Mask Aligner
ASML Stepper
Beta Squareused Perkin Elmer
DNK Aligner
Nikon Used Stepper
Ultratech Stepper
Ushio full-field
EVGMask Aligner
ELS Aligner
China 102 23 3 128
80% 18% 2%
Europe 6 1 1 8
75% 13% 13%
Japan 22 22
100%
Korea 14 9 25 1 2 51
27% 18% 49% 2% 4%
Malaysia 4 1 5
80% 20%
Singapore 20 20
100%
Taiwan 23 75 23 14 9 144
16% 52% 16% 10% 6%
USA 11 11
100%
Worldwide 182 20 2 107 48 14 1 6 9 389
Source: www.yole.fr
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 5
„Shadow Printing“ Lithography
Mask illumination using collimated UV light
Resolution proximity gap
MASK ALIGNER LITHOGRAPHY
Wafer
Mask
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 6
Diffraction effects
Proximity artifacts
Sidelobes
SHADOW PRINTING LITHOGRAPHY
Parallel Light
(sidelobes)
Apodization
Parallel Light Diffuse Light
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 7
Customized Illumination
Reduce diffraction effects (apodization)
Optical Proximity Correction (OPC)
Improve critical resist structures
Source Mask Optimization (SMO)
Customized Illumination and OPC
Alternating Aperture Phase Shift Mask (AAPSM)
...
PHOTOLITHOGRAPHY ENHANCEMENT
IN FRONT-END-OF-LINE WAFER STEPPERS
www.asml.com
www.zeiss.com
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 8
MO EXPOSURE OPTICS®
The new Illumination System for all SUSS Mask Aligners
Lamp readjustment required
Uniformity change over lamp lifetime
Daily uniformity test required
Variation of illumination light over mask
(angular spectrum)
CONVENTIONAL MASK ALIGNER ILLUMINATION
Forgot to control light
uniformity this morning.
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 10
KEY COMPONENTS: MICROLENS OPTICAL INTEGRATORS
Microlens Optical Integrator
Flat-Top Illumination Light Source
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 11
2x Microlens Integrators in the Mask Aligner
illumination system
Light homogenization in both Fourier planes
Self calibrating light source
Illumination filter plate (IFP)
MO EXPOSURE OPTICS®
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 12
MO Exposure Optics in SUSS MA8 Gen3 Mask Aligner Quick Plug & Play installation and IFP illumination filter exchange
MO EXPOSURE OPTICS®
SELF CALIBRATING MASK ALIGNER ILLUMINATION
Microlens Optical Integrators
Lamp readjustment required
Uniformity change over lamp lifetime
Daily uniformity test required
Variation of illumination light over mask
(angular spectrum)
NO
NO
NO
NO
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 13
MO EXPOSURE OPTICS® : QUICK INSTALLATION
Quick Installation in Mask Aligner Microlens Optical Integrators
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 14
Conventional Mask Aligner Illumination Optics (HR or LGO)
Daily light measurement (9 or 12 points) 5 min x 365 day ~ 30 hours per year
12x lamp exchange per year 30 min x 10 ~ 6 hours per year
36 hours less productive time & labor costs per year
MO Exposure Optics
Self-calibrating light source
No periodic uniformity and no lamp adjustment required
No lamp adjustment, no issues with light uniformity
SELF CALIBRATING LIGHT SOURCE
Forgot to control light
uniformity this morning.
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH)
MO Exposure Optics
installed!
15
MO Exposure Optics®
No uniformity measurements
No lamp alignment
Improved uniformity
Telecentric illumination
CD uniformity improvement = Yield!
Process stability assurance = Yield!
Convenience!
SELF CALIBRATING LIGHT SOURCE – SAFES TIME & MONEY
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 16
Forgot to control light
uniformity this morning.
MO Exposure Optics
installed!
Excellent light uniformity
No lamp misalignment
No uniformity change due to degradation of
lamp electrode during lifetime cycle
BETTER UNIFORMITY – INDEPENDENT OF LAMP POSITION
Deviation from mean value in [%] for Ø200mm in
MA200 Compact
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 17
TELECENTRIC MASK ILLUMINATION
Uniform angular spectrum of mask
illumination light over full mask area
Better resist sidewalls
Improved CD uniformity
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 18
ILLUMINATION FILTER PLATES (IFP)
IFP HR
Pupil Fill Ratio (PFR) 130%
IFP " More Light"
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 19
CONTACT OR PROXIMITY LITHOGRAPHY?
Changeover from
HR-Optics to LGO-Optics
in less than
5 minutes!
IFP-HR
„High Resolution“
IFP-LGO
„Large Gap“
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 20
COMPARISION: RESOLUTION FOR 100µM PROXIMITY GAP
Comparision of HR, LGO and MO Exposure Optics in MA6
Coating AZ 4110, Thickness = 1.2µm
Exposure MA6 (1KW lamp house), Proximity Gap 100µm
Developing Manual Developed. AZ400K (1:4 DI), 60sec
Lines 7µm
Lines 6µm
Lines 7µm
Lines 6µm
Lines 7µm
Lines 6µm
SUSS High-Resolution
Optics (HR)
SUSS Large Gap Optics
(LGO)
SUSS MO Exposure Optics
IFP Circle 20
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 21
COMPARISION: RESOLUTION FOR 300µM PROXIMITY GAP
Lines 20µm
Lines 10µm
Lines 20µm
Lines 10µm
Lines 20µm
Lines 10µm
Comparision of HR, LGO and MO Exposure Optics in MA6
Coating AZ 4110, Thickness = 1.2µm
Exposure MA6 (1KW lamp house), Proximity Gap 100µm
Developing Manual Developed. AZ400K (1:4 DI), 60sec
SUSS High-Resolution
Optics (HR)
SUSS Large Gap Optics
(LGO)
SUSS MO Exposure Optics
IFP Circle 20
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 22
SHADOW PRINTING: PINHOLE CAMERA
Graph: Lorenz Stürzebecher, FhG-IOF
Pinhole Camera
Camera Obscura
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 23
SHADOW PRINTING: PINHOLE CAMERA!
Graph: Lorenz Stürzebecher, FhG-IOF
Pinhole Camera
Camera Obscura
Light source
(Object)
Image of the
light source
in resist
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 24
ADVANCED MASK ALIGNER LITHOGRAPHY (AMALITH)
Pushing the limits!
OPTICAL PROXIMITY CORRECTION (OPC)
CHANGING THE PINHOLE
Square10µm x 10µm, Proximity Gap 50µm, Photoresist AZ4110, 1.2um thick
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 26
Light Source
• Self-Calibrating
• Customized
Illumination
Photomask
• Binary
• OPC
Exposure
• Exposure Time
• Proximity Gap
Photoresist
• Negative/Positive
• Chemical Enhanced
Process Resist Exposure Mask Source
Wet Process
• Developer
• Prebake/Postbake
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 27
Light Source
• Self-Calibrating
• Customized
Illumination
Photomask
• Binary
• OPC
Exposure
• Exposure Time
• Proximity Gap
Photoresist
• Negative/Positive
• Chemical Enhanced
Process Resist Exposure Mask Source
Wet Process
• Developer
• Prebake/Postbake
Simulation
Holistic Litho
• Simulation of
Lithography
Process Chain
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 28
PROCEDURE
Iterative simulations of different OPC mask layers
Export of the aerial image for the different
simulated settings
Matlab data elaboration
LayoutLAB resist (calibrated) simulation for the
resulting best profiles
LITHOGRAPHY SIMULATION: OPC DESIGN
Mask Layouts
LayoutLAB FLOW
Results
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 29
Optimization of the mask pattern (Optical Proximity Correction, OPC)
LITHOGRAPHY SIMULATION: OPC DESIGN
Mask Layout Mask Layout
with OPC
features
Resist Profile Resist Profile
LayoutLAB™ software from GenISys
Fraunhofer IISB
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SOURCE MASK OPTIZATION
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 31
ITERATIVE OPTIMIZATION: LOOP FUNCTION
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 32
Simulation enables significant process improvements
Customer purchased five MA200 Compact Mask Aligners
equipped with MO Exposure Optics®
INDUSTRY EXAMPLE:
REDUCTION OF PROXIMITY ARTIFACTS BY SMO
Proximity artifacts in redistribution lanes:
Deformations in lane edges. Simulation LayoutLAB software
Corrected: 30µm Exp Gap, SB 90°C, 300sec, 650mJ
in MA200 Compact with MO Exposure Optics
Fillet reduces erosion
Source Mask Optimization (SMO)
Proximity artifact: Deformation
(protrusion) due to diffraction effects
(simulation in LayoutLAB)
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 33
Aspect Ratio is the ratio of
the width of a shape to its
height.
HIGH ASPECT RATIO
Photomask
Wafer
Photoresist
Gap
He
igh
t
Width
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 34
MASK ALIGNER LITHOGRAPHY
Air G
ap
0 µm
15 µm
30 µm
100 µm
0 µm
15 µm
30 µm
100 µm
10µm 10µm 4µm 10µm
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 35
STRUCTURES AND GEOTMETRIES FOR LITHOGRAPHY
bars with different
width
rectangles with
different shape
crossed bars in
near contact
different corner
structures
three bars
neighboring
contact holes
seven bars
contact hole near
to a bar
single bar
contact hole
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 36
SINGLE LINE, 5UM WIDTH IN 5UM THICK AZ9260 RESIST
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 37
2D AERIAL IMAGE CROSS SECTION
100 µm
0 µm
GA
P
Broad Band illumination (g-, h- & i-line)
±3.5° 0.8° < < 1.6°
100 µm
0 µm
GA
P
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 38
SIMULATION – EXPERIMENT: KNIFE EDGE AT 100UM GAP
±0.7° circular illumination
Broad band illumination
Gap: 100µm
Resist: AZ9260, 10 µm thick
Light distribution in the resist
Resist after development
Developed
Not Developed
83.3°
71.3°
Dose 200 Dose 400
Assit Feature: Frensel Zone Plate
Sub Resolution Assist
Features (SRAF) based
on analytic approach
Increase the sidewall
steepness
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 39
2D AERIAL IMAGE CROSS SECTION
Broad Band Illumination (g-, h- & i-line)
100 µm
0 µm
GA
P
10µm 4µm
±3.5°
10µm 4µm
0.8° < < 1.6° ±3.5° 0.8° < < 1.6°
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 40
FRESNEL ZONE PLATE (FZP): HIGH ASPECT RATIO VIAS
MOEO ±0.7° circular illumination
Gap: 30µm
Resist: AZ9260, 10 µm thick
3µm
Broad band illumination, dose 0.3 i-line illumination, dose 0.1
1.8µm
20 µm
40 µm
GA
P
Light
17µm
AERIAL IMAGE
Conventional mask
(3µm opening)
TSV
Mask
Resist after development
Developed
Not
Developed
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 41
EXAMPLE: PACKAGING, TSV & 3DIC
Resulting Aerial Image
Illumination
Filter Plates (IFP)
Depth of focus
(DOF)
DOF
OPC Structure
(Fresnel-type)
11µm via at 800 µm proximity gap
To
p v
iew
S
ide
vie
w
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 42
EXAMPLE: PACKAGING, TSV & 3D IC
Benefits
Very large proximity gap
Via shaping possible
Extended Depth of Focus (DOF)
Very short exposure time (focussing)
Gap Ø Via DOF
100 µm 2 µm 5 µm
200 µm 3 µm 15 µm
300 µm 5 µm 30 µm
400 µm 7 µm 60 µm
500 µm 10 µm 100 µm
700 µm 14 µm 200 µm Typical parameters for via printing
using OPC Fresnel Technology
Resulting Aerial
Image Depth of focus
(DOF)
DOF
11µm via at 800 µm gap
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 43
PHOTOMASKS: PHASE SHIFT MASKS (PSM)
Source: PKL, Mask Technology & http://www.photomask.com/products/phase-shift-masks
Binary Chrome Mask Alternating Aperture Phase-Shift Mask (AAPSM)
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 44
ALTERNATING APERTURE PHASE SHIFT MASK (AAPSM)
30um gap
IFP HR
Air stack: 50um
0 µm
50 µm
GA
P
0 µm
50 µm
GA
P
0 µm
50 µm
GA
P
PSM
Binary Mask
PSM+OPC
Broad Band illumination
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 45
ALTERNATING APERTURE PHASE SHIFT MASK (AAPSM)
AZ1512, 2µm
Gap: 30µm
PSM Binary Mask PSM+OPC
Simulation
Experimental results
Simulation
Experimental results
Simulation
Experimental results
Broad Band illumination
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 46
MO EXPOSURE OPTICS: SU-8
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 47
SU-8: IMPROVEMENT OF FOOTING & SIDEWALLS
300µm thick SU8
Improvement of footing and sidewalls
with thick SU-8 using MO Exposure
Optics on SUSS MA56
SU8: 300µm thick, soft contact,
resolution 25µm
Courtesy: micro resist technology Berlin
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 48
MO EXPOSURE OPTICS FOR SU-8
SUSS MA6 MOEO
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 49
Light Source
• Self-Calibrating
• Customized
Illumination
Photomask
• Binary
• OPC
Exposure
• Exposure Time
• Proximity Gap
Photoresist
• Negative/Positive
• Chemical Enhanced
Process Resist Exposure Mask Source
Wet Process
• Developer
• Prebake/Postbake
Simulation
Holistic Litho
• Simulation of
Lithography
Process Chain
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 50
www.suss.com
www.suss.ch
SUSS MicroTec, Advanced Mask Aligner Lithography (AMALITH) 51