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ECE-305: Spring 2016 Course Introduction Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA [email protected] 1/12/16
Transcript
Page 1: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

Lundstrom ECE-305 S16

ECE-305: Spring 2016

Course Introduction

Professor Mark Lundstrom Electrical and Computer Engineering

Purdue University, West Lafayette, IN USA [email protected]

1/12/16

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Lundstrom ECE-305 S16 2

course objectives

To introduce students to the fundamentals of semiconductors and semiconductor devices.

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Lundstrom ECE-305 S16 3

electron devices transistor

Bardeen, Brattain, Shockley, 1947

vacuum tube

Edison effect, 1880 J.J. Thompson, 1897 diode (Fleming, 1904) triode (De Forest, 1905)

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Lundstrom ECE-305 S16 4

electron devices

semiconductor laser

Hall, 1962

LED

Holonyak, 1962

modern solar cell

Chapin, Pearson, Fuller, 1954

Page 5: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

transistors

5 Lundstrom ECE-305 S16

"The transistor was probably the most important invention of the 20th Century, and the story behind the invention is one of clashing egos and top secret research.”

- Ira Flatow, Transistorized! http://www.pbs.org/transistor/

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Lundstrom ECE-305 S16 6

Purdue’s semiconductor history

1941: WWII: Semiconductor diode rectifiers http://www.computerhistory.org

“Karl Lark-Horovitz is best known for turning the physics department of Purdue University, then a backwater school, into a research powerhouse. His personal research was in germanium and solid state science -- and if anyone had had a chance of inventing the transistor before Bell, it was Lark-Horovitz. As it was, the Purdue physics lab was probably only six to twelve months behind.” http://www.pbs.org/transistor/album1/addlbios/lark.html

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transistors

7 Lundstrom ECE-305 S16

S

D

G

symbol

D

S G

switch amplifier

S

D

G input signal

output signal

Page 8: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

The Si MOSFET

8 Lundstrom ECE-305 S16

S

D

G source drain

SiO

2

silicon

channel ~ 20 nm

gate oxide SiON ~ 1.1 nm

gate electrode

G D

symbol S

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transistor IV characteristics (also QV)

9 Lundstrom ECE-305 S16

S

D

G

symbol

Page 10: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

10 Lundstrom ECE-305 S16

“The most important moment since humankind emerged as a life form.” Isaac Asimov

(speaking about the “planar process” used to manufacture ICs -- invented by Jean Hoerni, Fairchild Semiconductor, 1959).

IEEE Spectrum Dec. 2007

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electron devices integrated circuit

Kilby (Texas Instruments) 1958

Noyce (Fairchild) 1959

Page 12: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

Moore’s Law

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What is Moore’s Law?

13 Lundstrom ECE-305 S16

Page 14: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

“Moore’s Law”

14

L = 5000 nm

Micro- electronics

L = 5 nm ?

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5000 nm à 5 nm

Nano-electronics

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exponential growth

15

transistors per cpu chip

1974

Lundstrom ECE-305 S16

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21st Century electronics

16

Bell Labs 1947 Apple 2007 21st Century electronics

?

Lundstrom ECE-305 S16

Page 17: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

The end of Moore’s Law

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http://spectrum.ieee.org/static/special-report-50-years-of-moores-law

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Electronics beyond Moore’s Law

18

Ion Torrent (Nature, 475, 349, 21 July, 2011)

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More than Moore: example: gene sequencing

19 http://www.genome.gov/sequencingcosts/

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What’s inside a smartphone?

20

www.apple.com Lundstrom ECE-305 S16

Page 21: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

What’s inside a smartphone?

21

www.apple.com

CMOS transistors for logic SiGe HBTs for RF A/D and D/A convertors Digital Signal processor Microprocessor ROM and FLASH memory CMOS imager Gyroscope MEMS devices Magnetometer Microphone, speaker LCD display and touch screen

Lundstrom ECE-305 S16

Page 22: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

21st Century electronics

22

Bell Labs 1947 Apple 2007 21st Century electronics

?

Lundstrom ECE-305 S16

Page 23: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

course outline

23

Part 1: Semiconductor Fundamentals: 5 weeks

Part 2: PN diodes, MS diodes, and devices 5 weeks

Part 3: Transistors 5 weeks

Lundstrom ECE-305 S16

Course objectives: To introduce students to the fundamentals of semiconductors and semiconductor devices.

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ECE-255 / 305 / 455-456

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υin

RD

υout = −gmRDυin

VDD

source drain

SiO

2

silicon

G DS

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course text

25 Lundstrom ECE-305 S16

Semiconductor Device Fundamentals, 2nd Edition (SDF) R.F. Pierret, Addison-Wesley Publishing Co, 1996. ISBN-0-201-54393-1

Do the reading!

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grading

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550 total course points

In-class quizzes/problems (maximum of 50 points)

Homework assigned. Solutions posted. Not graded.

Total score: The sum of the highest 4 of exams 1-5 and exam 6 plus your quiz total.

You must take Exam 6.

6 exams (5 + “final”, maximum of 100 points each)

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frequent exams

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1)  Multiple choices (5 questions) 25 points

2)  Problem 1 (usually 25 points)

3)  Problem 2 (usually 25 points)

4)  Exam score: (# correct / 75) x 100

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frequent exams

28

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ECE Policy for Calculators in Exams

29

Effective beginning in January 2015, the only calculator permitted for exams in ECE undergraduate courses (those at the 10000 – 40000 level) will be the Texas Instruments TI-30X IIS scientific calculator. This is an inexpensive calculator with a 2-line display, a fraction feature, one or two-variable statistics, simple conversions, and basic scientific & trigonometric functions. Students are encouraged to familiarize themselves with the use of this calculator well in advance of any exam.

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course web page

30 Lundstrom ECE-305 S16

https://nanohub.org/groups/ece305s16

All course information is posted on the class home page

Class announcements will supersede prior written information and will be posted on the course homepage Campus Emergency Policies: In the event of a major campus emergency, course requirements, deadlines and grading percentages are subject to changes that may be necessitated by a revised semester calendar or other circumstances. Information about changes will be posted on the course web page and available from [email protected]

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ABET outcomes

31

(i) An understanding of the semiconductor bonding and energy band models, of semiconductor carrier properties and statistics, and of carrier action.

(ii) An ability to apply standard device models to explain/calculate critical

internal parameters and standard terminal characteristics of the pn-junction diode and the Schottky diode

(iii) An ability to apply standard device models to explain/calculate critical

internal parameters and standard terminal characteristics of the Metal-Oxide-Semiconductor Field Effect Transistor and the Bipolar Junction Transistor

Lundstrom ECE-305 S16

Assessment: Exams 1 and 2 will assess outcome (i), exams 3 and 4 will access outcome (ii), and exams 5 and 6 will access outcome (iii).

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To report an emergency, call 911. To obtain updates regarding an ongoing emergency, sign up for Purdue Alert text messages, view www.purdue.edu/ea. There are nearly 300 Emergency Telephones outdoors across campus and in parking garages that connect directly to the PUPD. If you feel threatened or need help, push the button and you will be connected immediately. If we hear a fire alarm during class we will immediately suspend class, evacuate the building, and proceed outdoors. Do not use the elevator. If we are notified during class of a Shelter in Place requirement for a tornado warning, we will suspend class and shelter. If we are notified during class of a Shelter in Place requirement for a hazardous materials release, or a civil disturbance, including a shooting or other use of weapons, we will suspend class and shelter in the classroom, shutting the door and turning off the lights. Please review the Emergency Preparedness website for additional information. http://www.purdue.edu/ehps/emergency_preparedness/index.html

EMERGENCY PREPAREDNESS

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33

cheating

It’s wrong. I have a zero tolerance policy. Any case of cheating will earn you an F in the course and a report to the Dean of Students.

                     -­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐    Exam  Integrity  Statement    -­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐    I  understand  that  if  I  am  caught  cheating    on  this  exam  or  anything  else  in  this  course,  I  will  earn  an  F  for  the  course  and  be  reported  to  the  Dean  of  Students.        Read  and  understood;    ______________________________________________  

                                                                 Signature Lundstrom ECE-305 S16

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Lundstrom ECE-305 S16 34

questions

Page 35: 1 Intro to ECE 305 S16 - nanoHUBIntro_to_ECE305_S16.pdf · Lundstrom ECE-305 S16 3 electron devices transistor Bardeen, Brattain, Shockley, 1947 vacuum tube Edison effect, 1880 J.J.

How to study

35 Lundstrom ECE-305 S16

1) Do the assigned reading before class 2) Attend class and pay attention 3) Review the lecture after class 4) Do the HW without looking at the solutions 5) Review and understand the solutions 6)  Be sure you understand the quizzes

7)  Ask questions (in class, office hours, Piazza)

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36 Lundstrom ECE-305 S16

Google Official: on “ideal recruits” "There is no single set of discrete skills one can learn that will last an entire career in high-tech," Johnson writes. Instead, "ideal recruits are creative, adaptable and autonomous, and they have achieved a deep understanding of core subjects such as math, physics and computer science that make it possible to have a razor-sharp intuition and an ability to assimilate new subjects and technologies quickly, without even the expectation of being trained; they train themselves on the skills du jour as the need arises and with minimum help or structure.”

Bruce Johnson, the Atlanta site and engineering director for Google, in the Atlanta Journal-Constitution (12/23/11.

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Recommendations

37 Lundstrom ECE-305 S16

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ECE 305

38 Lundstrom ECE-305 S16

Work hard, have fun, learn something you can use for the rest of your career. Get started now and do well on Exam 1! https://nanohub.org/groups/ece305s16


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