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2. Hall 2. Hall resistance resistance I V I V where H H Source Drain z y x length of 2DES width d Magnetic Field Current I Quantum Hall Quantum Hall Device Device Spin Polarization of Spin Polarization of Fractional Quantum Hall Fractional Quantum Hall States States ntial is nearly equal to zero at FQHE. No is nearly equal to zero at FQHE. No electron scattering. electron scattering. Center for Advanced High Magnetic Field Science, Graduate School of Center for Advanced High Magnetic Field Science, Graduate School of Science, Osaka University, Japan Science, Osaka University, Japan Shosuke Sasaki Shosuke Sasaki QHE creates no heat. QHE creates no heat. 3. FQHE are purely eigen-value problem 3. FQHE are purely eigen-value problem of electrons. of electrons. 4. 4. The value of The value of V VH is extremely larger than is extremely larger than Vpotential . . V Hall Voltage VH Poential Voltage Vpotential The FQHE is the famous phenomena. However there are The FQHE is the famous phenomena. However there are some questions. One of them is the spin-polarization. some questions. One of them is the spin-polarization. We examine it in this talk. We examine it in this talk. ICTF16@Dubrovni ICTF16@Dubrovni k Oct. 14, 2014 Oct. 14, 2014 OR 77 OR 77
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Page 1: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

2. Hall resistance 2. Hall resistance IVIV

where HH

SourceDrain

z

y

x

length of 2DES

width d

Magnetic Field

Current I

Quantum Hall DeviceQuantum Hall Device

Spin Polarization of Spin Polarization of Fractional Quantum Hall StatesFractional Quantum Hall States

1. 1. Vpotential is nearly equal to zero at FQHE. Nois nearly equal to zero at FQHE. No electron scattering.electron scattering.

Center for Advanced High Magnetic Field Science, Graduate School of Science, Osaka University, JapanCenter for Advanced High Magnetic Field Science, Graduate School of Science, Osaka University, Japan

Shosuke SasakiShosuke Sasaki

QHE creates no heat. QHE creates no heat.

3. FQHE are purely eigen-value problem of 3. FQHE are purely eigen-value problem of electrons. electrons. 4. 4. The value of The value of VVHH is extremely larger than is extremely larger than Vpotential. . Therefore the gradient ofTherefore the gradient of VVHH cannot be ignored.cannot be ignored.

Hall Voltage VHPoential Voltage Vpotential

The FQHE is the famous phenomena. However there are some questions. The FQHE is the famous phenomena. However there are some questions. One of them is the spin-polarization. We examine it in this talk. One of them is the spin-polarization. We examine it in this talk.

ICTF16@DubrovnikICTF16@DubrovnikOct. 14, 2014Oct. 14, 2014OR 77OR 77

Page 2: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Hamiltonian and its eigen-statesHamiltonian and its eigen-states in single electron system in single electron system

Magnetic field

Gate

Potential Probe

Hall Probe

integer2

eBeB

kc

The eigen state is Landau wave function as follows:

H0 p eA 22m U y W z

Hamiltonian of single electron

Fig.6Potential for z-direction (Potential width is very narrow)

z

P o ten tia l

W (z )W (z )

y

P o ten tia l

U (y )

Fig.7 Potential U(y)

-eV 1

-eV 2

y = 0 y = d

),0,0(rot ,0 ,0 , ByB AA

EH 0

yikxEyikxyUymm

eByk

exp1

exp1

22 2

222

This narrow potential realizes the appearance of only the ground state for z-direction as follows:

222 )/()( eBkyeBeByk

the momentum

22)( cyeB

We obtain the eigen equation for the y-direction

where the center position c is proportional to

zee cyikx 2 for level L=0

zyikxzyx exp1

,,

where the variables separated.

-eV-eVHH

Page 3: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Wave function in Many electron system Wave function in Many electron system

Magnetic field

Gate

Potential Probe

Hall Probe

Hall Probe

electron orbital

Potential Probe

y

x

b

zee cyikx 2

ckeB

2eB

integer

Landau wave function of electron for L=0

Attention please.Attention please.

Hall voltage is extremely larger than potential Hall voltage is extremely larger than potential voltage for IQHE and FQHE. voltage for IQHE and FQHE.

Accordingly there is no symmetry between x Accordingly there is no symmetry between x and y directionsand y directions..

the center position moves to the right. the center position moves to the right. This is the many electron stateThis is the many electron stateWhen the momentum increases,When the momentum increases,

The position c is proportional to The position c is proportional to the momentum.the momentum.

the center position moves the center position moves to the left.to the left.When the momentum When the momentum decreases,decreases,

Page 4: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Total Hamiltonian of many-electron systemTotal Hamiltonian of many-electron system

HT H0 xi, yi, zi i1

N

HCWe separate HT into

where HD is the diagonal term and HI is non-diagonal part.

W k1,,kN E0 ki i1

N

C k1,,kN

HT HD H I

At ν=2/3 , the most uniform configuration is

created by repeating (filled,empty,filled).

This configuration gives the minimum value

for W.

y

x

Unit cell

At ν=3/5 , most uniform configuration is the

repeat of (filled,empty,filled,empty, filled).

Unit cell

Nkk

NNN kkkkWkkH,,

111D

1

,,,,,,

k1, ,kN 1

N !

k1x1, y1, z1 k1

xN , yN , zN

kNx1, y1, z1 kN

xN , yN , zN where

where C(k1•••kN) expresses the diagonal part of the Coulomb interaction Hc which is called “classical Coulomb energy”. filled,empty,filled

The dashed lines indicate the empty states

Also this configuration yields minimum value for W.

References: S. Sasaki, ISRN Condensed Matter Physics Volume 2014 (2014), Article ID 468130, 16 pages. S. Sasaki, Advances in Condensed Matter PhysicsVolume 2012 (2012), Article ID 281371, 13 pages.

Page 5: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Spin Polarization Spin Polarization

I. V. Kukushkin, K. von Klitzing, and K. Eberl, Phys. Rev. Lett. 82, (1999) 3665.

I. V. Kukushkin, K. von Klitzing and K. Eberl have measured the spin polarizations for twelve filling factors.

II. Their results give the very important knowledges for the polarization in FQHE shown below. Source

Drain

z

y

x

length of 2DES

width d

Magnetic field

Page 6: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Special transitions Special transitions via the Coulomb interactionsvia the Coulomb interactions

before after

conjugate hermite

31

Equivalent interactionEquivalent interaction

electron orbital

11 2 2

Electron distribution after transition is exactly the same as that before transition.

Therefore this partial Hamiltonian should be solved exactly because of the energy-degeneracy.

electron A

electron B

electron orbitals

transition

1

DC

2 31 2 3

conjugate hermite

21

This interaction is equivalent to the spin exchange with next form:

electron A

transition

electron B

Total momentum conserves.

CD

Momentum A increases by .2

Momentum B decreases.Transition to the left

Page 7: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Most effective Hamiltonian and its equivalent formMost effective Hamiltonian and its equivalent form

H c2 j 1* c2 j c2 j

* c2 j 1 c2 j* c2 j1 c2 j1

* c2 j j1,2,3

Bg0

B12

2c i*c i 1

i1,2,3

For=2/3

1*22

*11221 cccc

0 , cn* 0

Let us find the equivalent Hamiltonian by using the following mapping:

1c 2c 3c 4c

Zeeman energy

The strongest interaction is because of the nearest pair.Also the second strongest interaction is because of the second nearest pair.

Number of orbitals per unit cell

Number of electrons per unit cell

Page 8: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Renumbering of operators give the diagonalization of Renumbering of operators give the diagonalization of HH

We introduce new operatorsWe introduce new operators

jj aa ,2,1

H a1* p a2 p a2

* p a1 p e ipa2* p a1 p e ipa1

* p a2 p p

Bg

0

B1

22 a1

* p a1 p a2* p a2 p 2

p

We calculate the Fourier We calculate the Fourier transformation of transformation of H,H, then then

3,23,12,22,11,21,1 aaaaaa

654321 cccccc

j is the cell number

This Hamiltonian can be exactly diagnalized by using the This Hamiltonian can be exactly diagnalized by using the eigen-values of the matrix eigen-values of the matrix MM

The exact eigen-energies yield polarization.The exact eigen-energies yield polarization.

Bge

eBgM

ip

ip

*B

*B

Cell 1 Cell 2 Cell 3

Page 9: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Energy spectra for ν=2/3, 3/5 and 4/7 Energy spectra for ν=2/3, 3/5 and 4/7

Bge

Bg

Bg

eBg

M

ip

ip

*B

*B

*B

*B

0

0

0

0

Bge

eBgM

ip

ip

*B

*B

ν=2/3ν=2/3 ν=3/5ν=3/5

Bge

Bg

eBg

Mip

ip

*B

*B

*B

ν=4/7ν=4/7

d

sse Tkpp

d 1B2tanhd

2

11

de

matrix ofdimension

onpolarizati where

Energy spectrum of ν=2/3 Energy spectrum of ν=2/3 Energy spectrum of ν=3/5 Energy spectrum of ν=3/5 Energy spectrum of ν=4/7 Energy spectrum of ν=4/7

Wave number

energy

Wave number

energy

Wave number

energy

Page 10: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Polarization of Composite Fermion theory

ν =3/5

?

Polarization of the present theoryPresent theory

Effective magnetic field

Applied magnetic field

Spin direction isopposite against usual electron system.

Recently J.K. Jain has written the article. A note contrasting two microscopic theories of the fractional quantum Hall effect

Indian Journal of Physics 2014, 88, pp 915-929 He summarized the composite fermion theory.

ν =4/7 ν =3/5

Finite temperature

9= 1Ratio of critical field strength

He wrote as follows: For spinful composite fermions, we write = + , where = and are the filling factors of up and down spin composite fermions. The possible spin polarizations of the various FQHE states are then predicted by analogy to the IQHE of spinful electrons. For example, the 4/7 state maps into = 4, where we expect, from a model that neglects interaction between composite fermions, a spin singlet state at very low Zeeman energies (with = 2 + 2), a partially spin polarized state at intermediate Zeeman energies ( = 3 + 1), and a fully spin polarized state at large Zeeman energies ( = 4 + 0).

ν =4/7

?

Polarization

Applied magnetic field Applied magnetic field

Polarization

Page 11: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Theoretical curve of Spin PolarizationTheoretical curve of Spin Polarization

0.25, kBT 0.2

2 3

0.25, kBT 0.2

3 5

4 7

0.35, kBT 0.1

kBT 5.5

1 2

7 5

8 5

0.25, kBT 0.1

0.1, kBT 0.1

Small shoulder

Small shoulder Small shoulder

We should explain the small shoulders. We try it.

Red points indicate the experimental data by Kukushkin et al. Red points indicate the experimental data by Kukushkin et al.

Blue curves show our results. Thus the theoretical results are in good agreement with the Blue curves show our results. Thus the theoretical results are in good agreement with the experimental data.experimental data.

These small shoulders exist certainly in the data.

Shosuke Sasaki, Surface Science 566 (2004) 1040-1046, ibid 532 (2003) 567-575.

Page 12: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Spin Peierls effectSpin Peierls effect

'' ''

The interval becomes narrower in the second and fourth unit-cell and so on.

=2/3

Let us find the value t which gives the minimum energy.

tt

tt

1 ,1

1 ,1

00

00

20 tCNW

The classical Coulomb energy is expressed by t as;

where C is the parameter depending upon devices.

where are the coupling constants for non-deformation, and are also dependent upon devices.

00 ,

narrower narrowerwider wider

We express this deformation by the parameter t.

We take account of the famous mechanism “spin Peierls effect” into consideration.The interval between Landau orbitals becomes wider in the first and third unit-cell like this.

Page 13: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Eigen-energy versus deformation t

Lowest point

Classical Coulomb energy is proportional to t t 2 2 . .

Eigen-energy of the above Hamiltonian Eigen-energy of the above Hamiltonian HH is shown is shown by red curve.by red curve.

The total energy becomes minimum at the The total energy becomes minimum at the lowest point as follows: lowest point as follows:

energyenergy

p

pipip

papapapapapapapaBg

papaepapaepapapapa

papapapapapapapaH

4221 4*43

*32

*21

*1

*B

4*11

*43

*44

*3

2*33

*21

*22

*1

Page 14: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Spin Polarization Spin Polarization = 2/3 = 2/3

Calculated total energy for Calculated total energy for =2/3=2/3

'' ''

p

pipip

papapapapapapapaBg

papaepapaepapapapa

papapapapapapapaH

4221 4*43

*32

*21

*1

*B

4*11

*43

*44

*3

2*33

*21

*22

*1

Matrix of

the Hamiltonian

Bge

Bg

Bg

eBg

M

ip

ip

*B

*B

*B

*B

0

0

0

0

Polarization of Polarization of =2/3=2/3

4

1B2tanhd

2

1

4

1

sse Tkpp

Page 15: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Spin Polarization : Spin Polarization : =3/5 =3/5Electron configuration of =3/5

'''

BgB 0 0 0 0 e ip

BgB 0 0 0 0

0 BgB 0 0 0

0 0 BgB 0 0

0 0 0 BgB 0 e ip 0 0 0 BgB 0

Calculated total energy for Calculated total energy for =3/5=3/5

Polarization of Polarization of =3/5=3/5

pTkps

Bse d2tanh26

1 6

1

Matrix of the Hamiltonian

Page 16: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Theoretical curve of Spin PolarizationTheoretical curve of Spin Polarization

These theoretical results are in good agreement with the experimental data. Thus the spin Peierls instabilities appear in the experimental data of Kukushkin et al.

S. Sasaki, ISRN Condensed Matter Physics Volume 2013 (2013), Article ID 489519, 19 pages

Page 17: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Summary of theoretical calculationSummary of theoretical calculationOur treatment is simple and fundamental Our treatment is simple and fundamental without any quasi-particle. without any quasi-particle.

We have found a unique electron-configuration with the minimum classical Coulomb energy. For We have found a unique electron-configuration with the minimum classical Coulomb energy. For this unique configuration there are many spin arrangements which are degenerate. this unique configuration there are many spin arrangements which are degenerate.

We succeed to diagonalize exactly the partial Hamiltonian which We succeed to diagonalize exactly the partial Hamiltonian which includes the strongest and second strongest interactions. includes the strongest and second strongest interactions.

Then the results are in good agreement with the experimental Then the results are in good agreement with the experimental data.data.

The composite fermion theory has some difficulties for the spin The composite fermion theory has some difficulties for the spin polarization. polarization.

It is necessary to measure the polarization and its direction, It is necessary to measure the polarization and its direction, especially, at especially, at = 4/5 and 6/5. The shapes of polarization curves = 4/5 and 6/5. The shapes of polarization curves and the direction are very important to clarify the FQHE. and the direction are very important to clarify the FQHE.

Page 18: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

AcknowledgementAcknowledgement

Professor Masayuki Hagiwara Professor Masayuki Hagiwara Center for Advanced High Magnetic Field Science, Graduate School of Science, Osaka University, Center for Advanced High Magnetic Field Science, Graduate School of Science, Osaka University, JapanJapan

Professor Koichi Katsumata, Professor Koichi Katsumata,

Professor Hidenobu Hori, Professor Hidenobu Hori,

Professor Yasuyuki Kitano,Professor Yasuyuki Kitano,

Professor Takeji KebukawaProfessor Takeji Kebukawa

andand

Professor Yoshitaka FijitaProfessor Yoshitaka FijitaDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, JapanDepartment of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan

Page 19: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Thank you for your attentionThank you for your attention

Page 20: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

For the detailed discussion of composite For the detailed discussion of composite fermions, please come after this talk.fermions, please come after this talk.

Page 21: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Effective magnetic fieldApplied magnetic field

+

Effective magnetic fieldApplied magnetic field

+

ν =8/5ν =4/3

ν =2 ν = - 2/3+ ν =2 ν = - 2/5+

Jain’s explanation for >1

J.K. Jain, “A note contrasting two microscopic theories of the fractional quantum Hall effect” Indian Journal of Physics 2014, Vol. 88, pp 915-929

Thus polarizations of these states are not clarified in the composite fermion theory.

Two flux quanta are attached to hole

Two flux quanta are attached to holeopposite

The IQH state of electrons is combined with the composite fermion state of holes (not electrons).

Page 22: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Polarization of the present theory

ν =4/3 ν =8/5

Our results are in good agreement with the experimental data.

Page 23: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

Composite fermions for ν =3/5, 3/7, 4/7, 4/9 Recently J.K. Jain has written the article :, A note contrasting two microscopic theories of the fractional quantum Hall effect Indian Journal of Physics 2014, 88, pp 915-929

He summarized the composite fermion theory.

Effective magnetic fieldAppliedmagnetic field

Effective magnetic fieldAppliedmagnetic field

ν =4/9ν =3/7

Two flux quanta are attached to each electron

Blue dashed curves indicate the energiesof composite-fermion with up-spin.Red for down-spin

Note:

Red (down-spin) energy is higher than that of up-spin.

Magnetic field

B

energy

Magnetic field

B

energy

1 4 9 16

Effective magnetic field(opposite direction)Applied

magnetic field

Effective magnetic field(opposite direction)

Appliedmagnetic field

ν =3/5 ν =4/7The effective magnetic field is oppositeThe effective magnetic field is opposite to that with to that with ν =3/7, 4/9.

The polarization with The polarization with ν =3/5, 4/7 is opposite to that with is opposite to that with ν =3/7, 4/9.

Page 24: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

down-spin up-spin

Detail Comparison for Polarization

Composite Fermion theory

Present theoryContenuous spectrum

Contenuous spectrum

Composite fermion result deviates from the experimental data.

22 3

2Ratio = 1

2Ratio of B = 1

2 22

opposite direction

Dashed curves indicate the empty levels.Solid curves indicate the levels occupied with composite fermions.

Effective magnetic field for composite fermion

Applied magnetic field

Composite fermion result deviates from the experimental data.

Spin direction isopposite against usual electron case.

Absolute zero temperature

Absolute zero temperature

Finite temperature

Finite temperature

ν =3/5 ν =4/7

Page 25: 2. Hall resistance Magnetic Field Current I Quantum Hall Device Spin Polarization of Fractional Quantum Hall States 1. is nearly equal to zero at FQHE.

ν =4/5Polarization for FHQ states with Polarization for FHQ states with ν ν =4/5 and 6/5=4/5 and 6/5

The polarization versus magnetic field should be measured. The polarization versus magnetic field should be measured.

+

Applied magnetic field Effective magnetic field

Effective magnetic field

+

Applied magnetic field

Electron bound with Electron bound with four flux quanta four flux quanta

Hole bound with four Hole bound with four flux quantaflux quanta

ν =1 ν = - (1/5)

ν =6/5ν =1 ν =1/5


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