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Module 3Module 3
Solar PhotovoltaicSolar PhotovoltaicOsamu Iso
Workshop on Renewable Energies
November 14-25, 2005
Nadi, Republic of the Fiji Islands
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3.Solar Photovoltaic3.Solar Photovoltaic
1. Basic principles of PV1-1. Mechanism of generation1-2. Various type of PV cell1-3. Installation example1-4. Basic characteristic
2. Potential assessment2-1. Basic principle of assessment2-2. Insolation measurement
2-3. Estimation of annual generation power 2-4. Case practice
3. System configuration3-1. Cells, Modules and Arrays3-2. Type of system ( Grid interconnection or not )3-3. Power conditioner (Control system)3-4. Batteries3-5. Wiring3-6. Some tips for system design3-7. Case practice
• Contents
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3.Solar Photovoltaic3.Solar Photovoltaic
4. Example of equipment price
4-1. PV module
4-2. Battery
4-3. Power conditioner
5. Design example of Solar Home System ( SHS in Indonesia )
5-1. E7 Climate Change Projects
5-2. Renewable Energy Supply Systems
5-3. Reference
6. Design example of independent PV system for small community
6-1. Basic condition and planning steps
6-2. Basic load estimation
6-3. System capacity design
6-4. Backup generator 6-5. Merits of small grids (compare with SHS )
6-6. Case practice
• Contents
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3.Solar Photovoltaic3.Solar Photovoltaic
7. Design example of grid-connected PV system and analysis of
7-1. String characteristics
7-2. Energy production
7-3. Observations and analysis
8. Design example of grid interconnected PV system ( Philippine )
8-1. Introduction
8-2. Outline of Photovoltaic system
8-3. Lessons Learned8-4. Photo and Drawings
9. Maintenance
• Contents
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3. Solar Photovoltaic3. Solar Photovoltaic
1. Basic principles of PV
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1.Basic principle of PV1.Basic principle of PV
1. Basic principles of PV
1-1. Mechanism of generation
1-2. Various type of PV cell
1-3. Installation example
1-4. Basic characteristic
1-5. Case study
• Contents
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A d v a n t a g e s (1) Clean
Solar energy is a clean energy. It emits very smallamount of carbon gases or sulfur oxides.
(2) InfiniteSolar energy is infinite and permanent.
D i s a d v a n t a g e s
(1) Volatile in outputThe amount of sunlight varies according to seasonsand weather. Therefore, generating electric power to meet the demand anytime is impossible.
(2) Low in power densityRegardless of the vast solar energy coming down tothe earth, power density in sunlight can be as low as1,000 watts/m2. Acquisition of vast amount ofenergy needs vast surface area of the solar cell.
22--11--1. Principle and system configuration1. Principle and system configuration
• Characteristics of Photovoltaic
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22--11--2. Installed Capacity in the World2. Installed Capacity in the World
• Trends in Photovoltaic capacity in the world
0
200,000
400,000
600,000
800,0001,000,000
1,200,000
1,400,000
1,600,000
1,800,000
2,000,000
92 93 94 95 96 97 98 99 00 01 02 03
Year
1,809,000kW
Installed capacityper year Accumulated
capacityInstalled capacityper year
Accumulatedcapacity
Cap a
city(kW)
Other
8.2%
Australia
2.9%
Germany 22.7%
USA
15.2%
Netherlands
2.5%
Italy 1.4%
Accumulated capacity[MW]
at the end of 2003
JAPAN
47.5%
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+
+
+ +
- -
-
-
Photo Voltaic cell
Electrode
P-Type Semiconductor
N-Type Semiconductor
Reflect-Proof Film
Electrode
Solar Energy
Load
E l e c t r i c C u r r e n t
11--1. Mechanism of generation1. Mechanism of generation
• Mechanism of generation
The solar cell is composed of a P-type semiconductor and an N-typesemiconductor. Solar light hitting the cell produces two types of electrons,
negatively and positively charged electrons in the semiconductors.Negatively charged (-) electrons gather around the N-type semiconductor while positively charged (+) electrons gather around the P-typesemiconductor . When you connect loads such as a light bulb, electriccurrent flows between the two electrodes.
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11--1. Mechanism of generation1. Mechanism of generation
• Direction of current inside PV cell
P
N
Current appearsto be in the
reverse direction ?
• Inside current of PV cell looks like
“Reverse direction.” Why?
?
• By Solar Energy, current is pumpedup from N-pole to P-pole.
• In generation, current appears reverse.
It is the same as for battery.
P
N
Looks likereverse
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11--1. Mechanism of generation1. Mechanism of generation
• Voltage and Current of PV cell ( I-V Curve )
(V)
(A)
Voltage(V)
C u r r e n t ( I )
P
N
A
Short Circuit
Open Circuit
P
N
V
about 0.5V
(Silicon)
High intensity insolation
•Voltage on normal operation point
0.5V (in case of Silicon PV)
•Current depend on
- Intensity of insolation
- Size of cell
•Voltage on normal operation point
0.5V (in case of Silicon PV)
•Current depend on
- Intensity of insolation
- Size of cell
Low intensity insolation
Normal operation point
(Maximum Power point)
I x V = W
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11--1. Mechanism of generation1. Mechanism of generation
• Typical I-V Curve
(V)
(A)
Voltage(V)
C u r r e n t ( I )
0.49 V
St and ar d insolat ion 1.0 k W / m2
0.62 V
4.95A
5.55A
Depend on type
of cell or cell-
material
( Si = 0.5V )
Depend on cell-size
Depend on
Solar insolation
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11--1. Mechanism of generation1. Mechanism of generation
• Illegal use
If you charge PV by another power source
and try to make normal direction current,
the PV will heat up and cease to function.
Do not charge PV by another power source.
Force to make normal
direction current
Do not create a short circuit when sunshine is being received.
P
N
If a short circuit is created during insolation,
large current will heat up PV cell and cellwill cease to function.
P
N
+
-
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CrystallineCrystalline
Non-crystallineNon-crystalline
Single crystalSingle crystal
Poly crystallinePoly crystalline
AmorphousAmorphous
Gallium Arsenide (GaAs)Gallium Arsenide (GaAs)
Conversion Efficiencyof Module
Conversion Efficiencyof Module
10 - 17%10 - 17%
10 - 13%10 - 13%
7 - 10%7 - 10%
18 - 30%18 - 30%
Conversion Efficiency =Electric Energy Output
Energy of Insolation on cellx100%
Dye-sensitized TypeDye-sensitized Type
Organic Thin Layer TypeOrganic Thin Layer Type
7 - 8%7 - 8%
2 - 3%2 - 3%
11--2.2. Various type of PV cellVarious type of PV cell
• Types and Conversion Efficiency of Solar Cell
Silicon
Semiconductor
Silicon
Semiconductor
CompoundSemiconductor CompoundSemiconductor SolarCell
SolarCell
Organic
Semiconductor
Organic
Semiconductor
(Note) Single crystal = Mono crystal
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• Crystal cell (Single crystal and Poly crystalline Silicon)
Single crystal Poly crystalline
11--2.2. Various type of PV cellVarious type of PV cell
10cm 10cm
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• Surface of PV cell
11--2.2. Various type of PV cellVarious type of PV cell
Front Surface
(N-Type side)
• Aluminum Electrode(Silver colored wire)
• To avoid shading,electrode is very fine.
Anti reflection film
(Blue colored film)
• Back surface is P-type.
• All surface isaluminum electrodewith full reflection.
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Single crystal Poly crystalline
120W
(25.7V ,4.7A)
1200mm
800mm800mm
1200mm
11--2.2. Various type of PV cellVarious type of PV cell
• PV Module (Single crystal, Poly crystalline Silicon)
(3.93ft)
(2.62ft)
(3.93ft
)
(3.93ft)
128W
(26.5V ,
4.8A)
Formed by melting high purity
silicon, then sliced very thinly and
processed into solar panel.
“Metal silicon pure enough to
manufacture solar cell”
is poured into a mold and crystallized.
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11--2.2. Various type of PV cellVarious type of PV cell
• Single crystal silicon production process
Same as IC’s process Pulled up veryslowly to make
perfect crystal
• Perfect crystal growing is possible.
• Efficiency is high.
• Process speed is low.
• Price is high.
• Perfect crystal growing is possible.
• Efficiency is high.
• Process speed is low.
• Price is high.
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11--2.2. Various type of PV cellVarious type of PV cell
• Poly crystalline silicon production process
FragmentationFragmentation
MeltingMelting
Re-crystallizingRe-crystallizing
CoolingCooling
CuttingCutting
SlicingSlicing
Cool slowly to make
larger crystal
• Crystallization is not perfect.
• Efficiency is lower than single crystal.
• Process speed relatively higher.
• Price is lowerthan single crystal.
• Crystallization is not perfect.
• Efficiency is lower than single crystal.
• Process speed relatively higher.
• Price is lower than single crystal.
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11--2.2. Various type of PV cellVarious type of PV cell
• Improvement of Poly crystalline production process
Molten silicon
Meltingpot
Cooling block
Ideal control ofingot cooling
process
Heater control
Avoid pollution
Cool slowly,
carefully
Crack ofcrystallinecauses lawefficiency
Improvement
To grow big crystalline cell
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Glass substrate type Film substrate type
11--2.2. Various type of PV cellVarious type of PV cell
• Amorphous (Non-Crystalline) Silicon Solar Panels
• Manufactured by applying thin-layer manufacturing technology forsemiconductor
• Good for mass production. Price is lower than crystal type
• Efficiency is lower than crystal type
• Very flexible. Easy to fit on any shape of substrate.
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11--2.2. Various type of PV cellVarious type of PV cell
• A-Silicon production processLike “Rotary printer” for news paper (good for mass production)
PunchingSerial-hole forming
Metal electrode forming PunchingCorrecting electrode forming
Amorphous siliconforming
Transparent electrodeforming
Back patternelectrode forming
Electrode patterning
LASER patterner
Lamination
Protective film
Plasma formingprocess
( Vacuumed chamber )
SiH4 + O2 Si + 2H2O
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11--2.2. Various type of PV cellVarious type of PV cell
• Comparison of type
Price Efficiency 1 W size Current Production
Single crystal High 10 - 17 % 1.0 about 30 %
Poly crystalline Medium 10 – 13 % 1.3 about 60 %
Amorphous Low 7 – 10 % 1.7 about 10 %
(Reference)
PV cell size for1 W power generation
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11--2.2. Various type of PV cellVarious type of PV cell
• Shear of type
1018.4
10.2
0
9.9
5.8
10.1
2.7
5
5.4
65.4
10.250.3
73.9 56
18.8
61.3
36.8
21.128.7
1
2
3
4
5
6
7
8
9
1
Japan USA EU Others Total
Single Crystal
Poly Crystalline
Amorphous
Others
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11--2.2. Various type of PV cellVarious type of PV cell
• Sun shine spectrum and PV
Wavelength (nm)
R e l a t i v e S p e c t r a l r e s p o n s e
I r r a d i a n c e ( W / m )
Sun SpectrumCrystalline Silicon
Amorphous Silicon
Visible light Infra RedUltra Violet
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11--2.2. Various type of PV cellVarious type of PV cell
• Production share of the world market
1,194.7MW
(2004)
Japan
50.3%EU
26.3%
USA
11.6%
Others
11.7%SHARP27.1%
KyoCera8.8%
SANYO5.4%
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Refining
99.99999999 %
Raw SiliconSemiconductor
Wafer for ICIC Chip
Refining
99.9999 %
PV
Garbage,Edge,Inferior IC
Under developing
(Expensive now)
11--2.2. Various type of PV cellVarious type of PV cell
• How to make PV’s silicon
(Melt again)
To get cheaper silicon, recycled silicon is used for PV.
Amount of raw material is affected by IC industry’s production
To get cheaper silicon, recycled silicon is used for PV.
Amount of raw material is affected by IC industry’s production
Refining purity is lower than IC
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11--2.2. Various type of PV cellVarious type of PV cell
• Use insolation efficiently and reduce materials
Anti reflectioncoating
Back side reflectiveelectrode
Slice thin wafer
Wire saw
Low resistance finepatterned front electrode
Texturized surface
( like a pyramid )
Polycrystalline ingot
Poly Si wafer
fine wire saw
Reduce reflection
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11--2.2. Various type of PV cellVarious type of PV cell
• Hierarchy of PV
2 – 3 W
100 - 200 W
10 - 50 kW
Cell
Array
Module,Panel
Volt Ampere Watt Size
Cell 0.5V 5-6A 2-3W about 10cm
Module 20-30V 5-6A 100-200W about 1m
Array 200-300V 50A-200A 10-50kW about 30m
6x9=54 (cells) 100-300 (modules)
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11--2.2. Various type of PV cellVarious type of PV cell
• Roughly size of PV Power Station.
In this conference room, how much PV panel we can install?
1 kw PV need 10 m21 kw PV need 10 m2 Please
remember
10m(32feet)
2 0 m ( 6 5 f e e t
)
Conference
Room
(We are now)
Our room has about 200 m2
We can install about
20 kW PV in this room
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11--3.3. Installation exampleInstallation example
• Roof top style ( Residence )
•Main grid connected
•AC supply
•No battery
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11--3.3. Installation exampleInstallation example
• Roof top style ( School , Community-center building)
•Main grid connected
•AC supply
•With battery for emergency
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11--3.3. Installation exampleInstallation example
• Roof top style ( Off grid power supply )
Relay station on top of mountain Advertising sign beside highway
•No Grid connection
•AC supply•With battery
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11--3.3. Installation exampleInstallation example
• Roof top style ( Mountain lodge)
1.2kW system
Inverter and controller
•No Grid connection
•AC supply
•With battery
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11--3.3. Installation exampleInstallation example
• Stationary style
Site: Mongolia
Installation: May & June in 1999
Purpose: For lighting, refrigerator
and outlet in a hospital
Solar cell capacity: 3.4kW
Wind Power capacity: 1.8kW
Inverter capacity: 5kVA
•Independent small Grid connection
•AC supply
•With battery
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The system supplies alternating currentelectricity to 240 residences in 3 villages.
*Solar cell capacity: 151kW (total of 3 villages)
*Type of solar cell: single-crystal
*Inverter capacity: 100kW
*Battery:7,700kWh (total of 3 villages)
*Year of installation: 1986
22--11--3. Example3. Example
• Electrification of a village (in Thailand)
• Small Grid connection(3 villages grid)
• AC supply
• With battery
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11--3.3. Installation exampleInstallation example
• Solar Home System (SHS)
Solar array
Solar arraySolar array
Solar array
Controller
Light
Storage battery
•No Grid connection
•DC supply
•With battery
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11--4.4. Basic CharacteristicBasic Characteristic
• I / V curve and P-Max control
P
N
A
V
• To obtain maximum power, current
control (or voltage control) is veryimportant.
P- Max controlP- Max control
• “Power conditioner” (mentioned
later) will adjusts to be most suitablevoltage and current automatically.
(V)
(A)
Voltage(V)
C u r r e n t ( I )
I x V = W
P2
PMAX
P1
Vpmax
Ipmax
Power curve
I/V curve
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11--4.4. Basic CharacteristicBasic Characteristic
• Estimate current and voltage by I / V curve
(V)
(A)
Voltage(V)
C u r r e n t ( I )
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
)(05.0 Ω= R
I
V R =
P
N
A
)(05.0 Ω= R
If the load has 0.05 ohm resistance,
Circuit current is 10 AVoltage is 0.5 V
Then power is 10x0.5=5 W
R e s i s t a n
c e c h a
r a c t e r
PV character
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11--4.4. Basic CharacteristicBasic Characteristic
• I / V curve vs. Insolation intensity
P
NP
N
Mismatch
5A
1A
P
NP
N
BypassDiode
5A
1A 4A(V)
(A)
C u r r e n t ( I )
High intensity insolation
Low intensity insolation
I x V = W
5A
1A
•Current is affected largely by change
of insolation intensity.
•Partially shaded serial cell will
produce current mismatch.
Bypass Diode
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11--4.4. Basic CharacteristicBasic Characteristic
• Temperature and efficiency
4
6
8
1
12
14
1 2 3 4 5 6 7 8 9 1
Module Temperature (deg.C)
E f f i c i e n c y ( % )
Crystalline cell
Amorphous cell
0.25 ( % / deg)
Typical(25C)
Summer timeon roof top
(65C)
2%down 0 .4 – 0 .5 ( % / d e g )
•When module temperature rises up, efficiency decreases.
•The module must be cooled by natural ventilation, etc.
2 2 -
N o v -
0 5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o p o n R e n e w a b l e E n e r
g i e s
42
11--5.5. Case studyCase study
• Maximum power control
P
N
P
N
P
N
)(05.0 Ω= R
)(10.0 Ω= R
)(02.0 Ω= R
Q : Calculate loaded power to resistance.
( I / V curve is next page)
(Work)
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22/26
2 2 -
N o v - 0
5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o
p o n R e n e w a b l e E n e r g i e s
43
11--5.5. Case studyCase study
• Maximum power control
(V)
(A)
Voltage(V)
C u r r e n t ( I )
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
)(05.0 Ω= R
I
V R =
2 2 -
N o v -
0 5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o p o n R e n e w a b l e E n e r
g i e s
44
11--5.5. Case studyCase study
• Maximum power control
(V)
(A)
Voltage(V)
C u r r e n t
( I )
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
)(05.0 Ω= R
)(02.0 Ω= R
)(10.0 Ω= R
I
V R =
)(58.22.1123.0 W P =×=
)(31.37.558.0 W P =×=
)(00.50.1050.0 W P =×=
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23/26
2 2 -
N o v - 0
5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o
p o n R e n e w a b l e E n e r g i e s
45
11--5.5. Case studyCase study
• Maximum power control
P
N
P
N
P
N
)(05.0 Ω= R
)(10.0 Ω= R
)(02.0 Ω= R
Q : Calculate loaded power to the resistance.
( I / V curve is next page)
)(58.22.1123.0 W P =×=
)(00.50.1050.0 W P =×=
)(31.37.558.0 W P =×=
Maximum
2 2 -
N o v -
0 5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o p o n R e n e w a b l e E n e r
g i e s
46
11--5.5. Case studyCase study
• Bypass Diode
Q : Calculate maximum power of each system.
a : No bypass diode.
b : With bypass diode.
( I / V curve is next page)
P
NP
N
P
NP
N
System “a” System “b”
(Work)
8/20/2019 3-1 Basic Principles.pdf
24/26
2 2 -
N o v - 0
5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o
p o n R e n e w a b l e E n e r g i e s
47
11--5.5. Case studyCase study
• Bypass Diode
(V)
(A)
Voltage(V)
C u r r e n t ( I )
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
P1max (0.5V,10A)
P2max (0.5V,4A)
PXmax (0.6V,3A)
High insolation intensity
Low insolation intensity
2 2 -
N o v -
0 5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o p o n R e n e w a b l e E n e r
g i e s
48
11--5.5. Case studyCase study
• Bypass Diode
(V)
(A)
Voltage(V)
C u r r e n t
( I )
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
P1max (0.5V,10A)
P2max (0.5V,4A)
PXmax (0.6V,3A)
High insolation intensity
Low insolation intensity
For system “a”
)(8.136.01 W Pa =×=
)(8.136.02 W Pa =×=
3.6 W
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2 2 -
N o v - 0
5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o
p o n R e n e w a b l e E n e r g i e s
49
11--5.5. Case studyCase study
• Bypass Diode
(V)
(A)
Voltage(V)
C u r r e n t ( I )
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
P1max (0.5V,10A)
P2max (0.5V,4A)
PXmax (0.6V,3A)
High insolation intensity
Low insolation intensity
For system “b”
)(0.5105.01 W Pb =×=
)(0.245.02 W Pb =×=
7.0 W
2 2 -
N o v -
0 5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o p o n R e n e w a b l e E n e r
g i e s
50
11--5.5. Case studyCase study
• Bypass Diode
Q : Calculate maximum power of each system.
a : No bypass diode.
b : With bypass diode.
( I / V curve is next page)
P
NP
N
P
NP
N
System “a” System “b”
3A10A
6A4A
1.8 W
1.8 W
Total = 3.6 W
5.0 W
2.0 W
Total = 7.0 W
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2 2 -
N o v - 0
5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o
p o n R e n e w a b l e E n e r g i e s
51
11--5.5. Case studyCase study
• Temperature vs. Efficiency
4
6
8
2
4
2 3 4 5 6 7 8 9
Module Temperature (deg.C)
E f f i c i e n c y ( % )
Crystalline cell
Amorphous cell
0.25 ( % / deg)
Typical(25C)
Summer timeon roof top
(65C)
2%down 0 .4 – 0 .5 ( % / d e g )
4
6
8
2
4
2 3 4 5 6 7 8 9
Module Temperature (deg.C)
E f f i c i e n c y ( % )
Crystalline cell
Amorphous cell
0.25 ( % / deg)
Typical(25C)
Summer timeon roof top
(65C)
2%down 0 .4 – 0 .5 ( % / d e g )
Q: Suppose there is a 50 kW Crystalline PV system.
If surface temperature rises to 65ºC, what is the system
capacity?
(Work)
2 2 -
N o v -
0 5
( 1 7 : 5 2 )
e 7 / P P A W o r k s h o p o n R e n e w a b l e E n e r
g i e s
52
11--5.5. Case studyCase study
• Temperature vs. Efficiency
4
6
8
2
4
2 3 4 5 6 7 8 9
Module Temperature (deg.C)
E f f i c i e n c y
( % )
Crystalline cell
Amorphous cell
0.25 ( % / deg)
Typical(25C)
Summer timeon roof top
(65C)
2%down 0 .4 – 0 .5
( % / d e g )
4
6
8
2
4
2 3 4 5 6 7 8 9
Module Temperature (deg.C)
E f f i c i e n c y
( % )
Crystalline cell
Amorphous cell
0.25 ( % / deg)
Typical(25C)
Summer timeon roof top
(65C)
2%down 0 .4 – 0 .5
( % / d e g )
)(3.4213
1150 kW =×
Approx. 15% down
13
11
Q: Suppose there is a 50 kW Crystalline PV system.
If surface temperature rises to 65ºC, what is the systemcapacity?