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A Murata Company Jim Cable 17 Sept. 2019 30 Years of RF SOI Past, Present and Future
A Murata Company
Jim Cable17 Sept. 2019
30 Years of RF SOI Past, Present and Future
2Copyright © pSemi Corporation. All rights reserved. 25 September 2019
Murata Facts and Figures
Our BusinessWe are worldwide leaders in the design, manufacture and supply of semiconductors, electronic components and solutions. We are Innovators in Electronics.
Our Strengths• Advanced RF, mixed signal and materials technology• Broad and vertically integrated product portfolio• Extensive global manufacturing and sales network
Our Figures• Net sales 14 billion USD* • Employees 77,751* • Number of locations 102* (30 in Japan, 72 overseas)• Established in 1944
*as of March 31, 2019
3Copyright © pSemi Corporation. All rights reserved. 25 September 2019
Vision to Reality – CMOS Won
UltraCMOS®
Integrated RF Front End
ConventionalRF Front End
CMOSTransceiver
AntennaSwitches
RFFETuning
MMMBSwitches
Low NoiseAmplifiers
Tunable Filters
mmWaveRFFE
Timeline of Key Innovations
Our Vision
Sampling
In Production
Power Amplifiers
20202000
4Copyright © pSemi Corporation. All rights reserved. 25 September 2019
Combining the Best of the BestHighly
Insulating SubstrateSAPPHIRE + HR SILICON
• Proven SOI Technology
• Outstanding RF Properties
• RF + Digital + Analog + Passive Integration
Most Widely UsedSemiconductor Technology
CMOS• Scalable
• Lowest Power and Cost
• Fabless Model
Combining the Best of the Best• Unique Position in Industry• Better Performance• Highly Scalable• Enables Integration• Proven Global Fabless Model
Industry-leading RF Semiconductor Technology
+
5Copyright © pSemi Corporation. All rights reserved. 25 September 2019
Cgd
Cgs
Cbd
Cbs
gbsgdsgm
Cgd
Cgs
Cgb
gdb
rd
rs
Gate Bulk
Source
Drain
The small signal model is simplified with the removal of the shaded elements associated
with the bulk node.
• Reduced bulk parasitics• Fully-depleted is preferred for no kink effect• Faster devices• Reduced CV2f power loss• Improved linearity• High isolation• High passive Q
Why CMOS Won – UltraCMOS® Technology
Sapphire Substrate Eliminates Bulk Nonlinear Capacitances
6Copyright © pSemi Corporation. All rights reserved. 25 September 2019
• FET stacking allows UltraCMOS® technology to handle high RF power levels (>+40 dBm)
– Higher power handling will NOT degrade performance– Stacking creates a virtual high-voltage CMOS FET that can handle high power levels
• High power handling requires low-loss, insulating substrate– Bulk-CMOS will not work due to conducting substrate
What Does RF SOI Enable?
7Copyright © pSemi Corporation. All rights reserved. 25 September 2019
Fundamental Technical Problems: Innovation Required
-2 -1 0 1 2-3 3
2E-12
3E-12
4E-12
1E-12
5E-12
vdc
Cbulk
Csoi
• Bulk CMOS accumulates in deep subthreshold because of hole source from P+ well contact
• SOS will accumulate from EHP generation (thermal/light/etc.)
• Charged is trapped in channel by reverse-biased PN junctions
– Forms anti-series diodes • Creates harmonics with RF excitation
– Charge sloshing
SOI Accumulation Capacitance and Charge
Simulated charge accumulationwith RF signal present
8Copyright © pSemi Corporation. All rights reserved. 25 September 2019
-120
-115
-110
-105
-100
-95
-90
-85
-80
0 50 100 150 200
IMD
3 (d
Bm
)
Relative phase @ f=1.76GHz
IM3 vs Relative Phase between Duplexer and SwitchPTX = +20 dBm, PBL= -15 dBm
PE4263 IMD3 HaRP 4263 IMD3
IM3 Specification
GSM Cell
WCDMA Phone> 25 dBm
3GPP Intermodulation Specification
HaRP™ Invention: Linearity Breakthrough
SP6T SP6T + HaRP™ Technology
Interference
9Copyright © pSemi Corporation. All rights reserved. 25 September 2019
HaRP™ Technology Impact
2010 Today
Cellular Switch Market Share
Today & Tomorrow
SOI GaAs
2005Before HaRP™
10Copyright © pSemi Corporation. All rights reserved. 25 September 2019
UltraCMOS® Technology Evolution
9,000 Gross Die per 6” Wafer150 mm
200 mm
300 mm>25,000 Gross Die per 8” Wafer
>85,000 Gross Die per 12” Wafer
60% smaller 20x better linearity
50% smaller 10x better linearity
25% smaller 4x better linearity
60 nm
130 nm
0.35 μm
11Copyright © pSemi Corporation. All rights reserved. 25 September 2019
UltraCMOS® Technology IP: Value to the Industry
TOP10Semiconductor Manufacturing
Patent Power Scorecard 2017
Company by Pipeline Power
12Copyright © pSemi Corporation. All rights reserved. 25 September 2019
THE FUTURE: Appears We Were Right
• Monolithic multichannel FULLY Integrated RF Front End– 28 GHz and 39 GHz
8-Channel mmW RFFE – Sampling
RFFE = SOI Our Foreseeable Future
THANK YOU
