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5BB Vcell halfcut G1 wafer (TSS65TNG) · 2020. 6. 4. · Open Circuit VoltageVoc(V) 0.673 0.672...

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V-Cell Halfcut Series TSS65TNG 6" Mono c-Si Solar Cell Quality Control and Professional Service -Regular calibration of test equipment using Fraunhofer ISE reference cell. -Environmental friendly due to REACH-SVHC and RoHS compliances. -Professional on-site service and support for module certification. -Regular light source AAA class calibration for stable conversion efficiency. -Lowest LID by periodic monitoring and superior wafer incoming control. -High Cell-To- Module ratio through precise cell conversion efficiency sorting, classified efficiency grade by both minimum power and current. -Excellent electrical long-term stability and reliability by using of best raw materials and through strict quality inspection control. -Low breakage rate by using high qualified and stable wafers. -High quality homogeneous appearance by sorting into defined color classes. -100% screened for reverse current and shunt resistance. -The best solution for PV module with above 320W outputs. -Excellent passivation quality of the rear side compared to the traditional solar cell is clearly visible in the long wavelength regime. Features Physical Characteristics Dimensions Diagonal 223mm Front(-) 158.75mm X 158.75mm ± 0.5mm Color: Dark Blue, Blue 5 X 0.7 mm ± 0.1 mm segmented bus bars Distance between bus bars : 31.2 mm Aluminum back surface field 5x4 soldering pads, 1.5 mm±0.15 mm wide bus bars Distance between bus bars : 31.2 mm Back(+) Thickness(Si) 170 m 50 m Alkaline texturized surface with silicon nitride anti-reflecting coating E lectrical Characteristics Standard test condition: AM1.5, 1000W/m 2 , 25°c Average accuracy of all tests is +/-1.5% rel. E f c i e n c y C o d e 2 2 5 2 2 4 2 2 3 2 2 2 2 2 1 2 2 0 2 1 9 2 1 8 2 1 7 2 1 6 2 1 5 2 1 4 2 1 3 2 1 2 2 1 1 2 1 0 2 0 9 Efficiency Eff(%) 2 2 . 5 0 2 2 . 4 0 2 2 . 3 0 2 2 . 2 0 2 2 . 1 0 2 2 . 0 0 2 1 . 9 0 2 1 . 8 0 2 1 . 7 0 2 1 . 6 0 2 1 . 5 0 2 1 . 4 0 2 1 . 3 0 2 1 . 2 0 2 1 . 1 0 2 1 . 0 0 2 0 . 9 0 Power Pmpp(W) 5 . 6 7 5 . 6 4 5 . 6 2 5 . 5 9 5 . 5 7 5 . 5 4 5 . 5 2 5 . 4 9 5 . 4 7 5 . 4 4 5 . 4 2 5 . 3 9 5 . 3 7 5 . 3 4 5 . 3 2 5 . 2 9 5 . 2 7 Max. Power Current Impp(A) 9 . 7 3 0 9 . 6 9 6 9 . 6 8 0 9 . 6 6 5 9 . 6 5 1 9 . 6 4 1 9 . 6 3 5 9 . 6 3 0 9 . 6 1 7 9 . 6 1 0 9 . 6 0 1 9 . 5 9 0 9 . 5 7 8 9 . 5 5 9 9 . 5 3 4 9 . 5 1 9 9 . 4 6 7 Short Circuit Current Isc(A) 1 0 . 2 5 9 1 0 . 2 2 1 1 0 . 2 0 4 1 0 . 1 8 7 1 0 . 1 7 3 1 0 . 1 6 7 1 0 . 1 6 5 1 0 . 1 6 3 1 0 . 1 5 3 1 0 . 1 4 5 1 0 . 1 3 8 1 0 . 1 2 7 1 0 . 1 2 4 1 0 . 0 9 8 1 0 . 0 7 2 1 0 . 0 8 0 1 0 . 0 2 5 Max. Power Voltage Vmpp(V) 0 . 5 8 3 0 . 5 8 2 0 . 5 8 0 0 . 5 7 9 0 . 5 7 7 0 . 5 7 5 0 . 5 7 3 0 . 5 7 0 0 . 5 6 9 0 . 5 6 6 0 . 5 6 4 0 . 5 6 2 0 . 5 6 0 0 . 5 5 9 0 . 5 5 8 0 . 5 5 6 0 . 5 5 6 Open Circuit Voltage Voc(V) 0 . 6 8 4 0 . 6 8 3 0 . 6 8 1 0 . 6 8 0 0 . 6 7 8 0 . 6 7 6 0 . 6 7 5 0 . 6 7 4 0 . 6 7 3 0 . 6 7 1 0 . 6 6 9 0 . 6 6 7 0 . 6 6 7 0 . 6 6 4 0 . 6 6 3 0 . 6 6 2 0 . 6 5 9
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Page 1: 5BB Vcell halfcut G1 wafer (TSS65TNG) · 2020. 6. 4. · Open Circuit VoltageVoc(V) 0.673 0.672 0.671 0.669 0.668 0.667 0.665 0.663 0.662 0.658 0.650 V-Cell Halfcut Series TSS65TNG

Efficiency Code 216 215 214 213 212 211 210 209 208 206 202Efficiency Eff(%) 21.6 21.5 21.4 21.3 21.2 21.1 21.0 20.9 20.8 20.6 20.2Power Pmpp(W) 5.28 5.25 5.23 5.20 5.18 5.16 5.13 5.11 5.08 5.03 4.94Max. Power Current Impp(A) 9.206 9.179 9.154 9.132 9.113 9.096 9.083 9.065 9.051 9.031 9.024Short Circuit CurrentIsc(A) 9.731 9.706 9.684 9.665 9.653 9.640 9.628 9.608 9.593 9.572 9.530Max. Power Voltage Vmpp(V) 0.573 0.572 0.571 0.570 0.568 0.567 0.565 0.563 0.561 0.557 0.547Open Circuit VoltageVoc(V) 0.673 0.672 0.671 0.669 0.668 0.667 0.665 0.663 0.662 0.658 0.650

V-CellHalfcut Series

TSS65TNG6" Mono c-Si Solar Cell

Quality Control and Professional Service-Regular calibration of test equipment using Fraunhofer ISE reference cell.-Environmental friendly due to REACH-SVHC and RoHS compliances.-Professional on-site service and support for module certification.-Regular light source AAA class calibration for stable conversion efficiency.-Lowest LID by periodic monitoring and superior wafer incoming control.

-High Cell-To- Module ratio through precise cell conversion efficiency sorting, classified efficiency grade by both minimum power and current.-Excellent electrical long-term stability and reliability by using of best raw materials and through strict quality inspection control.-Low breakage rate by using high qualified and stable wafers.-High quality homogeneous appearance by sorting into defined color classes.-100% screened for reverse current and shunt resistance.

-The best solution for PV module with above 320W outputs.

-Excellent passivation quality of the rear side compared to the traditional solar cell is clearly visible in the long wavelength regime.

Features

Physical Characteristics

DimensionsDiagonal 223mm

Front(-)

158.75mm X 158.75mm ± 0.5mm

Color: Dark Blue, Blue

5 X 0.7 mm ± 0.1 mm segmented bus bars

Distance between bus bars : 31.2 mm

Aluminum back surface field

5x4 soldering pads, 1.5 mm±0.15 mm wide bus bars

Distance between bus bars : 31.2 mm

Back(+)

Thickness(Si) 170 m 50 m 200 m 30

Alkaline texturized surface with silicon nitrideanti-reflecting coating

Standard test condition: AM1.5, 1000W/m2 , 25°cAverage accuracy of all tests is +/-1.5% rel.

Electrical Characteristics

Standard test condition: AM1.5, 1000W/m2 , 25°cAverage accuracy of all tests is +/-1.5% rel.

Efficiency CodeEfficiency Eff(%)Power Pmpp(W)Max. Power Current Impp(A)Short Circuit Current Isc(A)Max. Power Voltage Vmpp(V)Open Circuit Voltage Voc(V)

21821.805.33

9.2909.8200.5730.674

21721.705.30

9.2749.8060.5720.673

21621.605.28

9.2619.7940.5700.671

21521.50

5.259.2529.7860.5680.669

21421.405.23

9.2439.7810.5660.668

21321.305.20

9.2319.7760.5640.666

21221.205.18

9.2189.7650.5620.665

21121.105.16

9.2069.7560.5600.663

21021.005.13

9.1909.7460.5580.662

20920.905.11

9.1779.7120.5560.658

22322.305.62

9.68010.2040.5800.681

22222.205.59

9.66510.1870.5790.680

22122.105.579.651

10.1730.5770.678

22022.00

5.549.641

10.1670.5750.676

21921.905.52

9.6359.8340.5750.675

22522.505.67

9.73010.2590.5830.684

22422.405.64

9.69610.2210.5820.683

Efficiency Code 225 224 223 222 221 220 219 218 217 216 215 214 213 212 211 210 209

Efficiency Eff(%) 22.50 22.40 22.30 22.20 22.10 22.00 21.90 21.80 21.70 21.60 21.50 21.40 21.30 21.20 21.10 21.00 20.90

Power Pmpp(W) 5.67 5.64 5.62 5.59 5.57 5.54 5.52 5.49 5.47 5.44 5.42 5.39 5.37 5.34 5.32 5.29 5.27

Max. Power Current Impp(A) 9.730 9.696 9.680 9.665 9.651 9.641 9.635 9.630 9.617 9.610 9.601 9.590 9.578 9.559 9.534 9.519 9.467

Short Circuit Current Isc(A) 10.259 10.221 10.204 10.187 10.173 10.167 10.165 10.163 10.153 10.145 10.138 10.127 10.124 10.098 10.072 10.080 10.025

Max. Power Voltage Vmpp(V) 0.583 0.582 0.580 0.579 0.577 0.575 0.573 0.570 0.569 0.566 0.564 0.562 0.560 0.559 0.558 0.556 0.556

Open Circuit Voltage Voc(V) 0.684 0.683 0.681 0.680 0.678 0.676 0.675 0.674 0.673 0.671 0.669 0.667 0.667 0.664 0.663 0.662 0.659

Page 2: 5BB Vcell halfcut G1 wafer (TSS65TNG) · 2020. 6. 4. · Open Circuit VoltageVoc(V) 0.673 0.672 0.671 0.669 0.668 0.667 0.665 0.663 0.662 0.658 0.650 V-Cell Halfcut Series TSS65TNG

TSS65TNG6" Mono c-Si Solar Cell

www.tsecpv.com

Specifications are subject to change without prior notice.TSEC reserves the rights of final interpretation

and revision of datasheet.8F, No.225, Sec. 3, Beixin Rd., Xindian Dist., New Taipei City 23143, Taiwan, R.O.Ct 886 2 2912 2199 f 886 2 2917 5399 m [email protected]

Taipei Headquarters

TSEC Corporation

No.85, Guangfu N. Rd., Hukou Township, Hsinchu County 30351,Taiwan, R.O.C. (Hsinchu Industrial Park)t 886 3 696 0707 f 886 3 696 0708

Hsinchu Plant

Temperature Coefficients

0.0407%/K

-0.2959%/K

-0.3662%/K

Solderability

Peel Strength Minimum

Soldering results may differ due to different flux, ribbons, soldering methods, and parameters.

>1.25 N/mm

Qualifications and Certificates

RoHS ComplianceSVHC tested

I D :0 0 0 0 0 3 3 4 9 0

Processing Recommendations

Solder Joint

Copper ribbons coated with 15~25µm:62%Sn/36%Pb/2%Ag or 60%Sn/40%Pb

Standard test condition: AM1.5, 1000W/m2, 25°c

Standard test condition: AM1.5, 1000W/m2, 25°c

Current Temperature Coefficient

Voltage Temperature Coefficient

Power Temperature Coefficient

α (ISC)

β (VOC)

γ (Pmax)

Preliminary version-June 2018Preliminary version-May 2020

Typical Current-Voltage Curve Calculated Temperature Coefficients

Typical IV-Power Curve

* All data measured under standard testing condition (STC): 1000 W/m2, AM 1.5, 25 °C.* All figures bear ±2% tolerance.* Reference cell calibrated by the Fraunhofer ISE in Freiburg.

tTypical Spec ral Response

Voltage (V)

Cur

rent

(A)

I SC (m

A)

TK( I SC )=( 4.07±0.39 ) mA/KTK(I SC )=( 0.0407± 0.0039 ) %/K

PM

PP (m

W)

TK(PMPP)=( -20.04± 0.46 ) mW/KTK(PMPP)=(-0.3662± 0.0084 ) %/K

Power

Short Circuit Current

VO

C (m

V)

TK ( V OC

OC

)=( -1.997± 0.046 ) mV/KTK ( V )=( -0.2959± 0.0068 ) %/K

Open Circuit Voltage

T ( °C )

T ( °C )

T ( °C )

9950

10000

10050

10100

10150

10200

10250

10 20 30 40 50 60 70 80

500

550

600

650

700

10 20 30 40 50 60 70 80

0

2000

4000

6000

8000

10000

12000

0 100 200 300 400 500 600 700 800

Voltage (mV)

Cur

rent

(mA

)

Pow

er (m

W)

wavelength (nm)

SR

(mA

*m2 /

W)

0

2

4

6

8

10

12

14

16

18

20

300 400 500 600 700 800 900 1000 1100 1200

0

2

4

6

8

10

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

1000W

900W

500W

300W200W

1000W

900W

500W

300W200W

4000

4300

4600

4900

5200

5500

5800

10 20 30 40 50 60 70 80


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