BFP840FESDSiGe:C NPN RF bipolar transistor

Product descriptionThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.

Feature list• Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,

1.5 kV HBM ESD hardness• High transition frequency fT = 85 GHz to enable best in class noise performance at high frequencies:

NFmin = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA• High gain Gms = 23 dB at 5.5 GHz, 1.8 V, 10 mA• OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA• Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding

collector resistor)

Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications• WLAN, WiMAX and UWB• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS,

BeiDou, Galileo)

Device information

Table 1 Part information

Product name / Ordering code Package Pin configuration Marking Pieces / ReelBFP840FESD / BFP840FESDH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E T8s 3000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet Please read the Important Notice and Warnings at the end of this document v2.0www.infineon.com 2018-09-26

Table of contents

Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.2 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.3 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63.4 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.5 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

BFP840FESDSiGe:C NPN RF bipolar transistor

Table of contents

Datasheet 2 v2.02018-09-26

1 Absolute maximum ratings

Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or test conditionMin. Max.

Collector emitter voltage VCEO – 2.25 V Open base

2.0 TA = -55°C, open base

Collector base voltage 1) VCBO 2.9 Open emitter

2.6 TA = -55°C, open emitter

Collector emitter voltage 2) VCES 2.25 E-B short circuited

2.0 TA = -55°C,E-B short circuited

Base current IB -5 3 mA –

Collector current IC – 35

RF input power PRFin – 20 dBm

ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. toJESD22-A114

Total power dissipation 3) Ptot – 75 mW TS ≤ 109 °C

Junction temperature TJ – 150 °C –

Storage temperature TStg -55

Attention: Stresses above the max. values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Exceeding only one of these values may cause irreversible damage to the integratedcircuit.

1 VCBO is similar to VCEO due to design.2 VCES is similar to VCEO due to design.3 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.

BFP840FESDSiGe:C NPN RF bipolar transistor

Absolute maximum ratings

Datasheet 3 v2.02018-09-26

2 Thermal characteristics

Table 3 Thermal resistance

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Junction - soldering point RthJS – 541 – K/W –

0 25 50 75 100 125 1500

10

20

30

40

50

60

70

80

TS [°C]

Ptot

[mW

]

Figure 1 Total power dissipation Ptot = f(TS)

BFP840FESDSiGe:C NPN RF bipolar transistor

Thermal characteristics

Datasheet 4 v2.02018-09-26

3 Electrical characteristics

3.1 DC characteristics

Table 4 DC characteristics at TA = 25 °C

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – V IC = 1 mA, IB = 0,open base

Collector emitter leakage current ICES – – 400 1) nA VCE = 1.5 V, VBE = 0,E-B short circuited

Collector base leakage current ICBO 400 1) VCB = 1.5 V, IE = 0,open emitter

Emitter base leakage current IEBO 10 1) μA VEB = 0.5 V, IC = 0,open collector

DC current gain hFE 150 260 450 VCE = 1.8 V, IC = 10 mA,pulse measured

3.2 General AC characteristics

Table 5 General AC characteristics at TA = 25 °C

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Transition frequency fT – 85 – GHz VCE = 1.8 V, IC = 25 mA,f = 2 GHz

Collector base capacitance CCB 38 fF VCB = 1.8 V, VBE = 0,f = 1 MHz,emitter grounded

Collector emitter capacitance CCE 0.37 pF VCE = 1.8 V, VBE = 0,f = 1 MHz,base grounded

Emitter base capacitance CEB 0.37 VEB = 0.4 V, VCB = 0,f = 1 MHz,collector grounded

1 Maximum values not limited by the device but by the short cycle time of the 100% test

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 5 v2.02018-09-26

3.3 Frequency dependent AC characteristics

Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.

OUT

IN

Bias-T

Bias-TB

(Pin 1)

E C

E

VCTop View

VB

Figure 2 Testing circuit

Table 6 AC characteristics, VCE = 1.8 V, f = 0.45 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 3528

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.5527

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

19.54

dBmZS = ZL = 50 Ω, IC = 10 mA

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 6 v2.02018-09-26

Table 7 AC characteristics, VCE = 1.8 V, f = 0.9 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 3127

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.626.5

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

19.54

dBmZS = ZL = 50 Ω, IC = 10 mA

Table 8 AC characteristics, VCE = 1.8 V, f = 1.5 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 28.526

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.625

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

204

dBmZS = ZL = 50 Ω, IC = 10 mA

Table 9 AC characteristics, VCE = 1.8 V, f = 1.9 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 27.525.5

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.6524

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

214.5

dBmZS = ZL = 50 Ω, IC = 10 mA

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 7 v2.02018-09-26

Table 10 AC characteristics, VCE = 1.8 V, f = 2.4 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 26.524

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.6522.5

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

214

dBmZS = ZL = 50 Ω, IC = 10 mA

Table 11 AC characteristics, VCE = 1.8 V, f = 3.5 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 2522

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.720.5

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

22.55

dBmZS = ZL = 50 Ω, IC = 10 mA

Table 12 AC characteristics, VCE = 1.8 V, f = 5.5 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gms|S21|2

– 2319

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

0.7517.5

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

225

dBmZS = ZL = 50 Ω, IC = 10 mA

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 8 v2.02018-09-26

Table 13 AC characteristics, VCE = 1.8 V, f = 10 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gma|S21|2

– 1613

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

1.113

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

19.53

dBmZS = ZL = 50 Ω, IC = 10 mA

Table 14 AC characteristics, VCE = 1.8 V, f = 12 GHz

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Power gain• Maximum power gain• Transducer gain

Gma|S21|2

– 15.510.5

– dB IC = 10 mA

Noise figure• Minimum noise figure• Associated gain

NFminGass

1.310.5

dB IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

18.51.5

dBmZS = ZL = 50 Ω, IC = 10 mA

Note: Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated inthis chapter, the test fixture losses have been subtracted from all measured results. OIP3 valuedepends on termination of all intermodulation frequency components. Termination used for thismeasurement is 50 Ω from 0.2 MHz to 12 GHz.

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 9 v2.02018-09-26

3.4 Characteristic DC diagrams

0 0.5 1 1.5 2 2.5 30

2

4

6

8

10

12

14

16

18

VCE [V]

I C [m

A]

IB = 10µA

IB = 20µA

IB = 30µA

IB = 40µA

IB = 50µA

IB = 60µA

IB = 70µA

Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter

10−2 10−1 100 101 102102

103

IC [mA]

h FE

Figure 4 DC current gain hFE = f(IC), VCE = 1.8 V

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 10 v2.02018-09-26

0.5 0.6 0.7 0.8 0.910−5

10−4

10−3

10−2

10−1

100

101

102

VBE [V]

I C [m

A]

Figure 5 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V

0.5 0.6 0.7 0.8 0.910−7

10−6

10−5

10−4

10−3

10−2

10−1

100

VB [V]

I B [mA]

Figure 6 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 11 v2.02018-09-26

0.3 0.4 0.5 0.6 0.710−11

10−10

10−9

10−8

10−7

10−6

VEB [ V ]

I B [ A ]

Figure 7 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 12 v2.02018-09-26

3.5 Characteristic AC diagrams

0 5 10 15 20 25 30 35 40 4505

10152025303540455055606570758085

IC [mA]

f T [GH

z]

2.00V

1.80V

1.50V

1.00V 0.50V

Figure 8 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter

0 5 10 15 20 25 300

5

10

15

20

25

IC [mA]

OIP

3 [d

Bm]

1.5V, 2400MHz1.8V, 2400MHz1.5V, 5500MHz1.8V, 5500MHz

Figure 9 3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameter

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 13 v2.02018-09-26

4567

8

9

9

10

10

11

11

12

12

13

13

14

14

15

15

15

16

16

16

17

17

17

18

18

18

18

19

19

19

19

191919 202020

20

20

20

20

212121

21

21

21

222222

22

VCE [V]

I C [m

A]

1 1.2 1.4 1.6 1.8 25

10

15

20

25

Figure 10 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz

−6 −5 −4 −3

−2

−2−2

−1

−1−1−1

0

0

000

1

1

111

2

2

2222

3

3

33

344

4

4

4

55

5

5

5

6

6

6

6

7

7

VCE [V]

I C [m

A]

1 1.2 1.4 1.6 1.8 25

10

15

20

25

Figure 11 Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 14 v2.02018-09-26

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20.03

0.035

0.04

0.045

0.05

VCB [V]

CC

B [pF]

Figure 12 Collector base capacitance CCB = f(VCB), f = 1 MHz

0 1 2 3 4 5 6 7 8 9 10 11 125

10

15

20

25

30

35

40

f [GHz]

G [d

B]

Gms

Gma

|S21|2

Figure 13 Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 10 mA

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 15 v2.02018-09-26

0 5 10 15 20 25 30 35 40 4510

15

20

25

30

35

40

IC [mA]

Gm

ax [d

B]

12.0GHz

10.0GHz

5.5GHz

3.5GHz 2.4GHz 1.9GHz 1.5GHz

0.9GHz

0.45GHz

Figure 14 Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz

0 0.5 1 1.5 2 2.59

12

15

18

21

24

27

30

33

36

39

VCE [V]

Gm

ax [d

B]

1.9GHz

12GHz

2.4GHz

10GHz

5.5GHz 3.5GHz

1.5GHz

0.9GHz

0.45GHz

Figure 15 Maximum power gain Gmax = f(VCE), IC = 10 mA, f = parameter in GHz

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 16 v2.02018-09-26

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.03 to 12 GHz

8.0

9.0

10.0

11.0

1.0

2.0

0.03

3.0

3.0

4.0

4.0

5.0

6.0

7.0

12.0

1.02.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

0.03

5.0mA10mA15mA

Figure 16 Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.50.9

1.51.9

2.43.55.5

8.0

10.0

12.0

5.5

0.51.5

2.43.55.5

8.0

10.0

12.0

5mA10mA15mA

Figure 17 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 17 v2.02018-09-26

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

1.0

0.03 to 12 GHz

2.03.0

4.0

7.0

8.0

12.0

1.02.0

3.04.0

5.06.0

7.0

8.0

12.0

0.03

5.0

6.0

9.0

10.0

11.0

9.0

10.0

11.0

5.0mA10mA15mA

Figure 18 Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA

0 2 4 6 8 10 120

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

f [GHz]

NF m

in [d

B]

IC = 5mAIC = 10mAIC = 15mA

Figure 19 Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 5 / 10 / 15 mA

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 18 v2.02018-09-26

0 5 10 15 200

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

IC [mA]

NF m

in [d

B] f = 0.9GHzf = 2.4GHzf = 3.5GHzf = 5.5GHzf = 10GHzf = 12GHz

Figure 20 Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter in GHz

0 5 10 15 200

0.20.40.60.8

11.21.41.61.8

22.22.42.62.8

33.23.43.6

IC [mA]

NF 50

[dB]

f = 0.9GHzf = 2.4GHzf = 3.5GHzf = 5.5GHzf = 10GHzf = 12GHz

Figure 21 Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz

Note: The curves shown in this chapter have been generated using typical devices but shall not beconsidered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.

BFP840FESDSiGe:C NPN RF bipolar transistor

Electrical characteristics

Datasheet 19 v2.02018-09-26

4 Package information TSFP-4-1

Figure 22 Package outline

Figure 23 Foot print

Figure 24 Marking layout example

Figure 25 Tape dimensions

BFP840FESDSiGe:C NPN RF bipolar transistor

Package information TSFP-4-1

Datasheet 20 v2.02018-09-26

Revision historyDocumentversion

Date ofrelease

Description of changes

2.0 2018-09-26 New datasheet layout.

BFP840FESDSiGe:C NPN RF bipolar transistor

Revision history

Datasheet 21 v2.02018-09-26

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Edition 2018-09-26Published byInfineon Technologies AG81726 Munich, Germany © 2018 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: erratum@infineon.com Document referenceIFX-gse1516184165320

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