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Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration...

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Brandon Wang Group Director, Strategic Program April 2015 Cadence Thermal Solution
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Page 1: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

Brandon Wang Group Director, Strategic Program April 2015

Cadence Thermal Solution

Page 2: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

2 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Growing thermal issues – Technology scaling => higher power density – 3DICs => greater thermal issues

• Temperature impacts

– Power consumption – Peak performance – Aging – Package costs

• MP SoC architectures – Dynamic applications, variable execution time – Power management solutions (DVFS), can even worsen thermal

properties! Thermal mitigation schemes must be proposed at design time

Thermal issues in modern SoCs

Page 3: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

3 © 2015 Cadence Design Systems, Inc. All rights reserved..

Impact of increased temperature during operation Increased design complexity and cost, higher operating cost

Data center

Source : Ponemon Institute Report (9/30/2010) on National Survey of Data Center Outages

Mobile market

Source : Broadcom talk on power and thermal challenges in mobile devices at Mobilicom 2013

Cooling is up to 50% of total cost Outage costs $5600/min.

Page 4: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

4 © 2015 Cadence Design Systems, Inc. All rights reserved..

Nasty effects of increased temperature Mean time to failure decreases by 2X for each 10o increase

Electromigration

Increased resistance (higher IR drop) or failure

Source : NXP CDNLive! 2009 Bangalore

Faster failures

Source : Freescale/UCIrvine talk at daiict – August 2009

Page 5: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

5 © 2015 Cadence Design Systems, Inc. All rights reserved..

Vicious cycle of thermal runaway Result of positive, accelerating feedback loop

Junction Temperature increase

Exponential increase in

leakage

Large increase in temperature Exceeds fixed capacity of package to dissipate heat

Page 6: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

6 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Temperature gradient may be as much as 40-500 across a chip

• Thermal diffusion causes heat to affect neighboring blocks

• Area with no transistors (very low power density) may be hotter than areas with active blocks

Thermal effects are not localized

Page 7: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

7 © 2015 Cadence Design Systems, Inc. All rights reserved..

Thermal Challenges in Mobile Application

Source: ST-Ericson

Page 8: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

8 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Power-analysis must take temperature into consideration

• But power affects temperature

• Temperature calculation must take power into consideration

• Iteration required until analysis results in small changes to power and temperature

Need for closed-loop analysis

Power Analysis

Thermal Analysis

Page 9: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

9 © 2015 Cadence Design Systems, Inc. All rights reserved..

Multi-Dies-package-board thermal co-simulation

Voltus Sigrity PowerDC

• Sigrity PowerDC computes Temperature map including multiple dies, package and board • Voltus computes temperature dependent Power map of each die ( leakage, dynamic) • Iterate co-simulation until results converge ( equilibrium, transit)

Power Map Temperature Map

Temperature Map Package Model

Power Map Die Model

Model Connection Protocol (MCP) – Connectivity map

from die to package to board

Page 10: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

10 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Support for flip-chip and 3DIC • Thermal analysis over multiple packages and boards • Tiled temperature map

System-centric thermal analysis Leakage-power dependent and including die information

2D plots of temperature and heat flux

3D visualization of thermal hotspots

Package DB (.spd)

Chip Design DB (LEF, DEF, Tech. Libs., Verilog, etc.)

Voltus

Sigrity PowerDC (Thermal

Only Mode)

Die Model w/o Package

(Spice RC model plus current signature)

i(t), I

Die Model

Power Map

Page 11: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

11 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Support for flip-chip and 3DIC • Analysis over multiple packages and boards

System-centric DC-thermal co-simulation Temperature-driven IR drop analysis including die information

Package DB (.spd)

Chip Design DB (LEF, DEF, Tech. Libs., Verilog, etc.)

Voltus

Sigrity PowerDC (Electrical-Thermal

co-sim. mode)

Die Model w/o Package

(Spice RC model plus current signature)

i(t), I

Die Model

Power Map

Page 12: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

12 © 2015 Cadence Design Systems, Inc. All rights reserved..

Package Model Extraction with Sigrity XtractIM • Support for single and multi-chip die, flip-chip, wirebond and leadframe • User-controlled extraction precision (RLGC) • Extraction with Sigrity hybrid solver and 3DEM engines

Chip-centric power analysis and signoff Temperature-dependent and including package/PCB info.

Chip Design DB (LEF, DEF, Tech. Libs., Verilog, etc.)

Package DB (.spd)

Sigrity XtractIM

Voltus Package Model (Spice .sp)

PKG Model

PCB Model

Total Power

Switching Power (computed only for on domains)

Leakage Power

Temperature dependent power analysis

Tiled power maps

Sigrity PowerDC

Thermal Map

Page 13: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

13 © 2015 Cadence Design Systems, Inc. All rights reserved..

• ~25% increase in current density for FinFETs

• Poor heat escape paths for FinFET devices – Wider temperature variations vs. planar

CMOS

• Self Heating Effect

– In devices (FEOL) – Function of number of fins, fingers etc.

– From thermal coupling with interconnect (BEOL) – Function of interconnect layer, metal width and

IRMS through the wires

Thermal sign-off in the era of FinFET devices

Source : Swann and Hassoun, Tufts Univ.

Page 14: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

14 © 2015 Cadence Design Systems, Inc. All rights reserved..

• FEOL ∆T by instance and by tile – Based on power calculation

and thermal resistance file

• BEOL ∆T by instance per layer – Based on IRMS computation for

PG and signal nets

• Worst ∆T reported per tile

Voltus solution for SHE Analysis Temperature-aware signoff for FinFET designs

Chip Design DB (LEF, DEF, Tech. Libs., Verilog, etc.)

Voltus Self Heating Analysis (FEOL and BEOL)

Thermal

Resistance File

Switching Activity (TCF/VCD)

Thermal Maps

Reports

Page 15: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

15 © 2015 Cadence Design Systems, Inc. All rights reserved..

Temperature-dependent chip signoff with Voltus IR drop and EM analysis

Chip Design DB (DEF, Verilog, etc.)

Temperature-based IR drop and EM analysis with Voltus

Library 1 (Temperature 1)

Library 2 (Temperature 2)

Library n (Temperature n)

Leakage currents

Switching Activity (TCF, VCD)

EM Rules File (Max. current

densities)

Page 16: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

16 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Global clock-gating with shutdown fail-safe

• Dynamic Voltage Scaling

• Temperature-tracking frequency scaling

• Feedback-controlled fetch-gating

• Fetch-decode throttling

• Speculation control

• Dual pipeline

• Migrating computation

• Register-file remapping

Dynamic thermal management (DTM) Design techniques to avoid thermal runaway

Slide 16 16

Source : Freescale/UCIrvine talk at daiict – August 2009

Page 17: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

17 © 2015 Cadence Design Systems, Inc. All rights reserved..

• Allows monitoring of up to 8 sensor inputs

• SAR ADCs for high performance and low power – 50KS/s temperature conversion rate and 0.2mW power

• Low latency (10 cycles)

• Operational from -400C to 1250C

• Accuracy of +/- 50C untrimmed and +/-1.50C trimmed

On-chip temperature monitoring IP from Cadence Used for dynamic thermal management

Temperature monitoring IP

Temp. sensors PMU

DVS example

Page 18: Cadence Thermal Solution - Global Semiconductor Alliance · 2019. 10. 11. · Electromigration Increased resistance (higher IR drop) or failure Source : NXP CDNLive! 2009 Bangalore

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