Comparison and Status of Low-Noise X Band Oscillators and Amplifiers

8/20/2019 Comparison and Status of Low-Noise X Band Oscillators and Amplifiers

1/52

““Comparison and Status of Low Comparison and Status of Low --

noise Xnoise X--band Oscillator andband Oscillator and Amplifier Technologies Amplifier Technologies””

D. A. Howe and A.D. A. Howe and A. HatiHatiNational Institute of Standards & Technology (NIST), Boulder, CONational Institute of Standards & Technology (NIST), Boulder, CO, USA , USA

Collaborations with Army Research Lab, Office of NavalCollaborations with Army Research Lab, Office of NavalResearch, Optical Frequency Measurements and Ion StorageResearch, Optical Frequency Measurements and Ion Storage

(NIST), Mayo Foundation, MIT(NIST), Mayo Foundation, MIT--LLLL

Acknowledgements of Acknowledgements of OEWavesOEWaves, Inc., Poseidon, Inc., PoseidonScientific, QScientific, Q--Dot, Corp.Dot, Corp.


2/52

Best-in-class PM noise results and descriptions of X-band amplifiers andoscillators based on recent measurements at NIST. Results are at an

operating frequency of 10 GHz.

Amplifier PM-noise measurements of:

SiGe with feedback noise suppression (FBA) Commercial amplifiers with feedforward noise suppression (FFA)

Array of commercial amplifiers with uncorrelated noise

Typical commercially available amplifiers

Impact of amplifier feedback noise on oscillator, review of Leeson’s model

Oscillator PM-noise measurements of:

Typical low-noise quartz oscillator, multiplied to 10 GHz

Optical Electronic Oscillator using fiber-delay-line resonator Sapphire-loaded CSO using interferometric carrier suppression

High-power air-dielectric CSO using 2W drive and impedance controlled carrier

suppression

DRO feedback oscillator

Optical femtosecond-comb divider with calcium-stabilized reference oscillator

OUTLINE OF TALK


3/52

Origins of oscillator phase noise motivates

low-noise amplifier development

resonator

at f o, with

Q L

noise-free amp

(unity gain)

+S a( f m)

S ο( f m)

S b( f m)

Phase stabilization of anoscillator with noise

sources and a resonator

with loaded Q, Q L.


4/52

GENERAL STRATEGY TO ACHIEVELOW RESIDUAL PHASE NOISE IN AMPLIFIERS

Use low 1/f noise devices

•

1/f noise multiplies up into near carrier noise due to amplifier non-linearities

• Generally HBTs have smaller low-frequency noise than all classes ofFETs

Use a design technique that achieves highly linear amplifier operationPossibilities include:

• Feedback (requires high f t)

• Feedforward (best over a narrow band with careful phase match)

•

Parallel HBTs that are graded for low 1/f noise (power/size cost)• Predistortion (adds to device noise)

• LINC -linear amplification using non-linear components (sampling-rate limited)

Low-noise Microwave Amplifier Measurements


5/52

19833 APROPOS_SPAWAR_04

Courtesy of Mayo Foundation


6/52

19057 APROPOS_2003

Courtesy of Poseidon Scientific

Low-noise Microwave Amplifier Measurements


7/52

19059 APROPOS_2003

Courtesy of Poseidon Scientific


8/52

Feedback in Common-Base Amplifier

f t of 350 GHz attained in SiGe HBT

Series-shunt feedback configuration

V S

in R

V BB L R

“SIGe HBTs with cut-off frequency of 350 GHz,” by Rieh, J.S., et al., International Electron Devices Meeting, pp.

771-774, December 2002.


9/52


10/52


11/52

2

2 2

4

( )

( )( )

o

OSC

v S f

S f Q f S f

φ

φ

φ

⎧⎪

= ⎨⎪⎩

2

2

o

o

v f

Q

v f

Q

<

>

o f v v= −Fourier frequency (offset frequency)

Leeson’s Oscillator Noise Model

D. B. Leeson, “A simple model of feedback

oscillator noise spectrum,” Proc. IEEE Lett., 1966.


12/52

SLCO Interferometric Stabilized Cavity Loop Oscillator

Feedback oscillator in which the high-Q cavity serves both

as the resonator and the discriminator. Carrier suppression and high Q increasediscriminator sensitivity.

Univ. of Western Australia, Poseidon Scientific Instruments, Ivanov, et al., 1998


13/52

Cavity stabilization of a DRO or YIG oscillator. Cavity serves as passive

discriminator. Carrier suppression and high drive power increasediscriminator sensitivity.

Impedance-controlled-coupling, Cavity-stabilized DRO/YIG

J. Dick (JPL), A. SenGupta, F. Walls (NIST) and C. Nelson, B. Riddle (NIST)


14/52

Single-fiber Opto Electronic Oscillator (OEO)

Courtesy of OEWaves, Inc.

Laser

Photodetector RF

Amplifier

RF

Coupler

RF

Filter

Optical Fiber

Optical

Modulator

RF

Output


15/52

Single-fiber Opto Electronic Oscillator (OEO)

Courtesy of OEWaves, Inc.

RF Filter

Fiber

Single Loop OEO

Ln

c

⋅

δν


16/52

Multi-loop OEO reduces spurs, but:

RF output

Laser Optical

Modulator

Photodetector 1

RF

Ampl if ier

RF

filter

RF

Coupler

Optical Fiber Fiber

splitter

Photodetector 2

RF

Combiner

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

100 1000 10000 100000 1000000 10000000

Offset Frequency (Hz)

P h a s e

N o i s e

( d B c / H z )

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

100 1000 10000 100000 1000000 10000000

Offset Frequenc y (Hz)

P h a s e

N o i s e

( d B c / H z )

- Single Optical Loop 4.4Km

- Dual Optical Loop 8.4Km&2.2Km

D. Eliyahu and L. Maleki Proceedings 2003 IEEE Int.

Freq Control Symposium, pp405

Long fiber

Short fiber

• Not enough spurious suppression for

many RF system needs.•Worse phase noise performance.

Opto-Electronic Oscillator

Q = 10 inoptical systems And Low g-sensitivity

Q = 10 inoptical systems And Low g-sensitivity

111111

Optical Fiber Laser

Optical

Modulator

Photodetector RF

Ampl if ier

RF

Filter

RFCoupler

RF output Single loopOEO

JPL’s

Dual loop

OEO

• OEO has very high Q and frequency agili tyover a wide range…

• But long fiber OEO has spurs…


17/52

ComparisonComparison

• The Multi-loop OEO uses

“ energy competition” between

carrier mode and spur modes

to suppress spurs.

Long fiber

Short fiber

• For the Injection-Locked OEO:

the spurs from the master OEO

cannot be supported by the slave

OEO’s.

Master OEO Slave

OEO

In principle, spurs can be

“eliminated” by destructive

interference.

Courtesy of Army Res. Lab.

Spurs are suppressed.


18/52

Femtosecond Comb Optical Divider

10-5

10-4

10-3

10-2

10-1

100

o r m a

z e

o w

e r

120011001000900800700600

Wavelength (nm)

Broadband Femtosecond Mode-locked Laser Comb f r

•Broadband femtosecond lasersrequire more careful control of the

intracavity dispersion and laser

alignment.

•In this particular case, the convexmirror provides enhanced self-

amplitude modulation which

generates shorter pulses and broader

spectraCourtesy of Scott Diddams, NIST

A. Bartels and H. Kurz, Opt. Lett. 27, 1839 (2002)


19/52


20/52

Ultra-low PM Noise from Optical Sources


21/52


22/52

The End The End

D. A. Howe and A.D. A. Howe and A. HatiHatiNational Institute of Standards & Technology (NIST), Boulder, CONational Institute of Standards & Technology (NIST), Boulder, CO, USA , USA

Thanks to many contributors.Thanks to many contributors.


23/52

Comparison of different classes of microwave amplif iers and oscillators at X-band

Conclusion

K. Ko, K. Lee, “A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit

Topologies for RF and Microwave Applications”, IEEE Journal of Solid State Circuits, Vol. 31, no. 8,

1996.

H. Ainspan,M Soyuer, JO Plouchart, J. Burghartz, “A 6.25 GHz Low DC Power Low-Noise Amplifier

in SiGe”, IEEE Custom Integrated Circuits Conference, 1997.

M. Soyuer,“A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology”, IEEE Radio Frequency

Integrated Circuits Symposium 1997.

R. Gotzfried, F. Beisswanger, S. Gerlach, A. Schuppen, H. Dietrich, U. Seiler, K.-H. Bach and J.

Albers, “RFIC’s for Mobile Communication Systems Using SiGe Bipolar Technology”, IEEE

Transactions on Microwave Theory and Techniques, Vol. 46, no. 5, 1998.

D.Y.C. Lie, X. Yuan, L.E. Larson, Y.H. Wang, A. Senior, J. Mecke, “RF-SoC: low-power single-chip

radio design using Si/SiGe BiCMOS technology,” Proceedings of the 3rd International Microwave

and Millimeter Wave Technology, pp. 30-37, August 2002.

S. Muthukrishnan, “ESD protected SiGe HBT RFIC Power Amplifiers” Thesis: Virginia Polytechnic

Institute and State University, Blacksburg, Va, March 2005.

J.S. Rieh, B. Jagannathan, H. Chen, K.T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F.Golan, D. Greenberg, S.J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K.K.

Vaed, R. Volang, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, “SIGe HBTs with cut-off

frequency of 350GHz,” International Electron Devices Meeting, pp. 771-774, December 2002.

N. Shiramizu, T. Masuda, M. Tanabe, K. Washio, “A 3-10 GHz bandwidth low-noise and low-power

amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology,” CentralRes. Lab., Hitachi Ltd., Tokyo, Japan; This paper appears in: IEEE Radio Frequency integrated

Circuits (RFIC) Symposium, 12-14 June, 2005.


24/52

Comparison of different classes of microwave amplif iers and oscillators at X-band

Conclusion

“A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit Topologies for RF and

Microwave Applications”, by Ko and Lee, IEEE Journal of Solid State Circuits, Vol. 31, no. 8, 1996.

“A 6.25 GHz Low DC Power Low-Noise Amplifier in SiGe”, by Ainspan, et. al., IEEE Custom

Integrated Circuits Conference, 1997.

“A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology”, by Soyuer, IEEE Radio FrequencyIntegrated Circuits Symposium 1997.

“RFIC’s for Mobile Communication Systems Using SiGe Bipolar Technology”, by Gotzfried et. al.,

IEEE Transactions on Microwave Theory and Techniques, Vol. 46, no. 5, 1998.

“RF-SoC: low-power single-chip radio design using Si/SiGe BiCMOS technology,” by Lie, D.Y.C.,

Yuan, X., Larson, L.E., Wang, Y.H., Senior, A., Mecke, J., Proceedings of the 3rd International

Microwave and Millimeter Wave Technology, pp. 30-37, August 2002.

“ESD protected SiGe HBT RFIC Power Amplifiers” by Muthukrishnan, S., Thesis: Virginia

Polytechnic Institute and State University, Blacksburg, Va, March 2005.

“SIGe HBTs with cut-off frequency of 350GHz,” by Rieh, J.S., Jagannathan, B., Chen, H.,

Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.J.,

Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K.k Volang, R., Ahlgren, D.,Freeman, G., Stein, K., and Subbanna, S., International Electron Devices Meeting, pp. 771-774,

December 2002.

“A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in

0.25- /spl mu/m SiGe BiCMOS technology,” Shiramizu, N. Masuda, T. Tanabe, M. Washio,

K. Central Res. Lab., Hitachi Ltd., Tokyo, Japan; This paper appears in: IEEE Radio Frequencyintegrated Circuits (RFIC) Symposium, 12-14 June, 2005.

http://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20masuda%20%20t.%3cIN%3eau)&valnm=++Masuda%2C+T.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20tanabe%20%20m.%3cIN%3eau)&valnm=++Tanabe%2C+M.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20washio%20%20k.%3cIN%3eau)&valnm=++Washio%2C+K.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20tanabe%20%20m.%3cIN%3eau)&valnm=++Tanabe%2C+M.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20%20masuda%20%20t.%3cIN%3eau)&valnm=++Masuda%2C+T.&reqloc%20=others&history=yeshttp://ieeexplore.ieee.org/search/searchresult.jsp?disp=cit&queryText=(%20shiramizu%20%20n.%3cIN%3eau)&valnm=+Shiramizu%2C+N.&reqloc%20=others&history=yes


25/52

Low-noise Microwave Oscillator Measurements

-190

-180

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-90

-80

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-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z

OEWave 16 Km Single Fiber

Low Noise QZ with Perfect Multiplier

SLCO Poseidon (Published data)

NIST Cavity Stabilized DROFemtosecond Comb

Calcium Optical (projected)

-190

-180

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-160

-150

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-110

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1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z






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-170

-160

-150

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-110

-100

-90

-80

-70

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1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z






-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80

-70

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-50

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1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z






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-160

-150

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-110

-100

-90

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-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z






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-180

-170

-160

-150

-140

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-100

-90

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-50

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1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z






-190

-180

-170

-160

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1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c

/ H z







26/52

SLCOSLCO Interferometric Interferometric Stabilized Cavity Loop Oscillator Stabilized Cavity Loop Oscillator

Active oscillator in which the high-Q cavity serves both

as the resonator and the discriminator. Carrier suppression and high Q increasediscriminator sensitivity.


27/52

Impedance Impedance - - controlled controlled - - coupling, Cavity coupling, Cavity - - stabilized DRO/YIG stabilized DRO/YIG

Cavity stabilization of a DRO or YIG oscillator. Cavity serves as passivediscriminator. Carrier suppression and high drive power increase

discriminator sensitivity.

O S C


28/52

1 GHz Ring Laser

Ti:Sapphire

Gain

532 nm

Pump

⇒ GigaOptics laser, OFS fiber

-50

-40

-30

-20

-10

0

d B b e l o w m

a x i m u m

12001000800600

wavelength (nm)

MicrostructureOptical Fiber

An Octave-Spanning Comb using Microstructure Fiber

With typical microstructured fibers, one needs

about 150 pJ of pulse energy in ~30 fs to generate

an octave of spectrum. This corresponds to 200

mW average power at a 1 GHz rep rate or 15 mW

average power at a 100 MHz rep rate.

f r

Femtosecond Comb Optical Divider

Courtesy of Scott Diddams, NIST

O ill t ’ i


29/52

Oscillators’ noise

2

2 24

( )

( )

( )

o

OSC

v S f

S f Q f

S f

φ

φ

φ

⎧⎪

= ⎨⎪⎩

2

2

o

o

v f

Q

v f Q

<

>

o f v v= −

Leeson’s model*

Fourier frequency (offset frequency)

oscillation condition:

*D. B. Leeson, “A simple model of feedback

oscillator noise spectrum,” Proc. IEEE Lett., 1966.

A

0

0

2 f j

Q

H H e ν−

≈

0 A A e φ=

1 H =


30/52

-15

-14

-13

-12

-11

-10

-9

-8

0.1 1 10 100 1000 10000 100000

τ[sec]

σ y( τ)

τ

-1

τ-1/2

τ0

τ1/2

0

v y

v

Δ=

10

10

10

10

10

10

10

10


31/52

-140

-120

-100

-80

-60

-40

-20

0

1 10 100 1000 10000 100000 1000000

Fourier frequency [Hz]

0

4

h f

=−∑ 0 h f f ≤ ≤4− Sx(f ) =

3 f −

2 f −

1 f −

0 f

( )

New calculation

S f φ


32/52

Noise type

y(τ)

0 White phase

1 Flicker phase

2 Random walk phase

3 Flicker frequency

4 Random walk frequency

Frequency Domain

Power Spectral Density

of phase fluctuations

2 = −

Allan Deviation of fractional frequency fluctuations

Time Domain

1τ

−∝

1τ

−∝

1 2 / τ

−∝

0τ∝

1

τ∝

R f f Ad d D i T h i


33/52

References for Advanced Design Techniques “A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit

Topologies for RF and Microwave Applications”, by Ko and Lee, IEEE Journal

of Solid State Circuits, Vol. 31, no. 8, 1996.

“A 6.25 GHz Low DC Power Low-Noise Amplifier in SiGe”, by Ainspan, et. al.,

IEEE Custom Integrated Circuits Conference, 1997.

“A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology”, by Soyuer,

IEEE Radio Frequency Integrated Circuits Symposium 1997.

R f f Ad d D i T h i


34/52

References for Advanced Design Techniques “RFIC’s for Mobile Communication Systems Using SiGe Bipolar Technology”,

by Gotzfried et. al., IEEE Transactions on Microwave Theory and Techniques,

Vol. 46, no. 5, 1998.

“RF-SoC: low-power single-chip radio design using Si/SiGe BiCMOS

technology,” by Lie, D.Y.C., Yuan, X., Larson, L.E., Wang, Y.H., Senior, A.,

Mecke, J., Proceedings of the 3rd International Microwave and MillimeterWave Technology, pp. 30-37, August 2002.

“ESD protected SiGe HBT RFIC Power Amplifiers” by Muthukrishnan, S.,

Thesis: Virginia Polytechnic Institute and State University, Blacksburg, Va,

March 2005. “SIGe HBTs with cut-off frequency of 350GHz,” by Rieh, J.S., Jagannathan,

B., Chen, H., Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J.,

Golan, F., Greenberg, D., Jeng, S.J., Khater, M., Pagette, F., Schnabel, C.,

Smith, P., Stricker, A., Vaed, K.k Volang, R., Ahlgren, D., Freeman, G., Stein,K., and Subbanna, S., International Electron Devices Meeting, pp. 771-774,

December 2002.

“A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB

communications in 0.25- /spl mu/m SiGe BiCMOS technology,” Shiramizu,N. Masuda, T. Tanabe, M. Washio, K. Central Res. Lab., Hitachi Ltd.,

Tokyo, Japan; This paper appears in: IEEE Radio Frequency integrated

C B LNA R I l ti

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35/52

C-B LNA: Reverse Isolation

Examining the circuit it is clear that virtually none of the signal at the output

port appears at the input port. C-B amplifier therefore offers excellent reverse

isolation.

C

E

r π

g V m π

C jc

RbB

C π

Re RS

_ rev availP

_ rev delvP

L R


36/52

IV. LEESON’S EQUATION

1. Origins of Phase Noise

A simple feedback loop (phase servo) predicts phasenoise from device noise figure, baseband noise sourcesand resonator Q.

2. Leeson’s Equation

Predicts Spectral Density (PSD) of Phase Fluctuationsfrom 1/f noise, noise figure, carrier power and loaded Q.

S (f ) Addi i hi h l i f


37/52

S a(f m): Additive white thermal noise power at f o.

F : noise figure of the amplifier and resonator

k : Boltzmann’s constant

T : Temperature in Kelvin

B : Set to 1 Hz to give S a(f m) as Power SpectralDensity (PSD). Then normalize to the oscillator output

power, Pc, to give the normalized PSD.

( )cc

maP

FkT

P

FkTB f S == [Hz-1] (1)

Sb(f ): Baseband noise sources upconverted by active


38/52

S b(f m): Baseband noise sources upconverted by active

device non-linearity.

Flicker noise (1/f noise)

Shot noise (white noise)

Thermal (white noise)

K 2

K 1/ f

log( f ) (Hz)c’

log[S b(f m)](W/Hz)

Transform the phase servo loop to baseband and combine


39/52

Transform the phase servo loop to baseband and combine

normalized input noise sources:

noise-free amp(unity gain)

+S i(f m)

LPF

( ) ( )mim Lo

mo f S f Q

f

f S ⎥⎥⎦

⎤

⎢⎢⎣

⎡

⎟⎟ ⎠

⎞

⎜⎜⎝

⎛

+=

2

21

( )cmcc

miP

K

f P

K

P

FkT f S 21 ++= [Hz-1]

(2) L

or

Q

f f

2=

Output PSD:

Input PSD:

Input Noise Power Spectral Density, Si(f )


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Input Noise Power Spectral Density, S i(f m)

[Hz-1] (3)

Log[

K 2/ Pc

K 1/Pc f m

log( f m) (Hz)c c'

FkT/Pc

log[S i(f m)](Hz

-1

)

The intersection of the K 1/ f m and FkT/Pc is the corner

frequency, f c.

( ) ⎟⎟ ⎠

⎞⎜⎜⎝

⎛ +=

m

c

c

mi f

f

P

FkT f S 1


41/52


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2. Leeson’s Equation


43/52

q

Leeson’s equation for the Power Spectral Density of anoscillator:

( )⎥⎥

⎦

⎤

⎢⎢

⎣

⎡

⎟⎟

⎠

⎞⎜⎜

⎝

⎛ +⎟⎟

⎠

⎞⎜⎜

⎝

⎛ +=

2

211

m L

o

m

c

c

mo f Q

f

f

f

P

FkT f S [rad 2/Hz]

Equal to Spectral Density of Phase Fluctuations, [rad 2/Hz],

when AM noise is negligible.

( ) ( )mim L

omo f S

f Q

f f S

⎥⎥

⎦

⎤

⎢⎢

⎣

⎡⎟⎟ ⎠

⎞⎜⎜⎝

⎛ +=

2

21

[Hz-1]( ) ⎟⎟ ⎠

⎞⎜⎜⎝

⎛ +=

m

c

c

mi f

f

P

FkT f S 1

2. Leeson’s Equation, cont.


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q ,

[rad 2/Hz]

Single Sided Spectral Density of Phase Fluctuations,

[rad 2

/Hz], versus offset frequency, f m.

( ) ( )⎥⎥

⎦

⎤⎢⎢

⎣

⎡⎟⎟

⎠ ⎞

⎜⎜⎝ ⎛ +⎟⎟

⎠ ⎞

⎜⎜⎝ ⎛ +==

2

211

m L

o

m

c

c

mom f Q

f

f

f

P

FkT f S f S φ

0 Hz f m

S φ [Hz-1

]

S ο (f m)

c

FkT/2Pc

f r

1/ f 3

1/ f2

f m[Hz]

Using Leeson’s Equation to Predict Oscillator Phase Noise


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g q

[rad 2/Hz]

Consider two cases:1. High-Q oscillator: f c > f r ,

2. Low-Q oscillator: f c


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c

L(f m)

[dBc/Hz

FkT/2Pc

f r

1/ f

1/ f 3

c

L(f m)

[dBc/Hz

FkT/2Pc

1/ f3

1/ f 2

(a) High Q-Oscillator: f r f c

f m [Hz] f m[Hz]

( )⎥⎥

⎦

⎤⎢⎢

⎣

⎡⎟⎟

⎠ ⎞

⎜⎜⎝ ⎛ +⎟⎟

⎠ ⎞

⎜⎜⎝ ⎛ +=

2

112 m

r

m

c

c

m f

f

f

f

P

FkT f L ( ) ( )mm f L f S 2=φ [rad 2/Hz]

C f C O


47/52

Comparison of Candidate Oscillators

OscillatorHigh Power Air

CavitySLCO Poseidon OEO

Output coupling Very Low ModerateDirectionalcoupler and

amplifier

Resonator Q Moderate

60,000

High

190,000

Very High

1e9

Loop Power High

1-10 Watts

Moderate

100's mW

Inherent Spurs None None Many


48/52


49/52

-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z




NIST Cavity Stabilized DRO

Femtosecond Comb


-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z





Femtosecond Comb


-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z





Femtosecond Comb


-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z





Femtosecond Comb


-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z





Femtosecond Comb


-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z





Femtosecond Comb


-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80-70

-60

-50

-40

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B

c / H z





Femtosecond Comb


I t f ti C it St bili d DRO/YIG


50/52

Interferometic Cavity Stabilized DRO/YIG


51/52

Amplifier ComparisonaPROPOS PM noise, goal, and four existing amplifiers (@ 10 GHz)

-200

-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80

-70

-60

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c / H z

Projected amp. spec, Pin=0 dBm

MSH-6135501,Pin=+2.57 dBm

MSH-6133401, Pin=+2.57 dBm

HMMC-5618 #1, Pin=+3.7dBm

HMMC-5618 #2, Pin=+3.7dBm

Mayo FFA, Pin=0 dBm

NIST Array, Pin=0 dBm

Typical Microwave Amplifier

Noise Floor of Measurement System


52/52

MAYO First Feedfoward Amp Results12/ 17/04 aPROPOS amplifier PM noise, goal (@ 10 GHz)

-200

-190

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80

-70

-60

1 10 100 1000 10000 100000 1000000 10000000

Frequency (Hz)

L ( f ) d B c / H z

Projected amp. spec,

Pin=0 dBmMayo FFA, Pin=0 dBm

NIST Array, Pin=0 dBm

OE Waves Loop Amp,

Pin=-20 & +10 dBmNoise Floor of

Measurement System

Date post:	07-Aug-2018
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Comparison and Status of Low-Noise X Band Oscillators and Amplifiers

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