p-type Transistors
Featured in the 17th March 2016 issue
Featured in the 26th January 2016 issue
n-type Transistors
Compound Semiconductor Nanowire Transistors for Future ICs § World’s first vertically stacked III-V
nanowire CMOS on silicon platform.
§ For sub-5 nm ‘technology node’ in year 2020 or beyond.
Stacked InAs Nanowires
K. H. Goh et al., IEDM, pp. 395-397, 2015 (highlight paper)
Source Drain
Enabling Low Power and High Speed OEICs: First Monolithic Integration of InGaAs n-FETs and GaAs/AlGaAs Lasers on Si Substrate (To be presented in VLSI Symposium 2017)
GeGaAs BufferGaSb Buffer
InGaAs/InAs Channel
S D
S DAlAsSb Barrier
n+-InAs
W/Mo
SiO2
Silicon Substrate
SiO2
W/Mo
W/Mo
SiO2
SiO2 TaN
TaN
SiO2
InAl
AsW/Mo
Mo
W
TaN
SiO2
Ge
50 nm Ge pFET
-0.6 0.3 0.0 -0.3 0.6 0
100
200
300
Dra
in C
urre
nt (µ
A/µ
m)
Drain Voltage (V)
LCH = 170 nm LCH = 110 nm
|VGS| - |VTH| = 0.0 V to 0.7 V in steps of 0.1 V
§ CMOS compatible process with sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules
§ Record on-current for both FETs among co-integrated (Si)Ge p-FETs and InGaAs n-FETs on Si
§ Presented in IEEE IEDM* Dec 2015
World’s First Monolithic Integration of Ge P-FETs and InAs N-FETs on Si Substrate Using Ultra Thin Buffer Layer
100 nm
TaN
W/Mon+-InAs
Si
SiO2
GeGaAsGaSb
AlAsSb InGaAs/InAs
InAs nFET
5 *Interna(onalElectronDevicesMee(ng2015,7-9Dec,Washington,DC
The First GeSn FinFET on a Novel GeSnOI Substrate AchievingLowest S of 79 mV/decade and Record High Gm,int of 807 µS/µm for GeSn P-FETs (To be presented in VLSI Symposium 2017)
Record Low Specific Contact Resistivity (1.2×10-9 Ω-cm2) for P-type Semiconductors: Incorporation of Sn into Ge and In-Situ Ga Doping (To be presented in VLSI Symposium 2017)
World’s First GeSn Multiple Quantum Wells on Si Avalanche Photodiode
§ World’s first GeSn (Germanium-Tin) MQWs on Si APD in mid-infrared spectral range (up to 2 µm)
§ Match low-loss hollow core photonic crystal fiber at 2 µm for optical communication
§ Also applicable for remote sensing, medical diagnostics, and environmental monitoring
§ Presented in IEDM Dec 2015
§ λ range: 1550 to 2003 nm § Maximum avalanche gain of
15 @ 2003 nm § R = 0.33 A/W @ 2003 nm,
@Vbias = - 10V
2 µm
6
Germanium-Tin Heterojunction Phototransistor: Towards High-Efficiency Low-Power Photodetection in Short-Wave Infrared Range (VLSI 2016)
