Critical Review of EUV ReticleInspection Options2009 International Symposium on EUVL

Daniel WackOctober 20, 2009

| 2009 International EUVL Symposium Prague2

Agenda

Inspection challenges

Near-Term Solutions

Long-Term Alternatives

Roadmap

Summary

| 2009 International EUVL Symposium Prague3

Inspection is facing a wide set of requirements

Need: Single system to support all litho technologies

Challenges

Small pitch and linewidths

Reflective imaging technique

“Multi-Layer” defects

No pellicles

Challenges

Critical layer-to-layer CD defects

Reticle contribution to overlay budget ~35%

Challenges

Small feature sizes

Mixed feature sizes

Irregular shapes

Defect impact assessment

| 2009 International EUVL Symposium Prague4

Teron 610: Inspect the unexpected…

High-powered 193nm laser

High NA 55nm pixel

Ultra-low aberration optics

Advanced photo-contamination control

New autofocus

High speed image sensor & data path

Simultaneous T&R operation

World-class image compute power

Large-file high-speed data prep

Advanced thermal & vibration control

Advanced defect detection algorithms

Reticle Defect Inspection for 2Xnm and beyond

| 2009 International EUVL Symposium Prague5

Defect Capture Improvement on 193 EPSM L/S

Teron 610Die-to-database

55nm pixel

TeraScanXRDie-to-database

72nm pixel

Teron 610 Improves Defect Capture in Tight Pitch

145nm dark line 145nm 1:1 145nm clear lineImprovement ~ 30% ~ 40% ~ 35%

Titan v2 EPSMTest Reticle

Typical 100% captureDefect size, nm

9 9 0 012 12 11 1111 11 12 1211 11 19 1919 19 22 2222 22 22 2229 29 28 2829 29 31 3132 32 35 3538 38 34 3438 38 37 3744 44 46 4646 46 48 48

0 0 0 00 0 0 09 9 0 0

12.5 12 0 018.7 19 0 019.7 20 0 021.8 22 0 0

25 25 21 2133.2 33 28 2829.4 29 31 3137.7 38 37 3739.5 39 35 3543.5 43 43 43

9 9 9 90 0 0 00 0 16 1612 12 16 1612 12 19 1910 10 22 2216 16 25 2522 22 25 2525 25 33 3328 28 31 3131 31 38 3838 38 44 4434 34 41 41

| 2009 International EUVL Symposium Prague6

Resolution for EUV Exists• 55nm pixel already shows good

resolution down to 25nm HP node on EUV masks

6

Teron platform is well suited for EUV inspection

6xx p55 Reflected Light Imaging

Controlled, in-tool reticle handling environment already exists

• Reticle Load Station – New station with ISO1 cleanliness (vs. ISO2)

• Stage – improved vibration and thermal• Environment• Tighter IAS and RLS vibration specifications vs. 500 Series

• thermal control in RLS, stage, optics• Particulate filters (ULPA)• AMC filters (user specifies)

• Need to add EUV Pod/Reticle Handling capability

Environmental Rack

AMCHeater

Blower

Cooler

| 2009 International EUVL Symposium Prague7

Teron provides damage-free inspection of EUV Masks

Sematech analysis of EUV blank (Ru) exposed to full power scans

EUV reflectivity and XRR show no change through 50x scans

Change of EUV reflectivity

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

128

129

130

131

132

133

134

135

136

137

138

139

140

141

142

143

Wavelength (Ǻ)

Ref

lect

ivity

Intensity 1, 2XIntensity 1, 10XIntensity 1, 20XIntensity 1, 50XIntensity 0Intensity 0.8, 20XIntensity 0.5, 20XIntensity 0.2, 20XIntensity 0.1, 20X

Change of XRR spetrum

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E+06

1.00E+07

0 1 2 3 4 5 6 7 8 9 10

2 theta

Inte

nsity

Intensity 1, 2XIntensity 1, 10XIntensity 1, 20XIntensity 1, 50XIntensity 0Intensity 0.8, 20XIntensity 0.5, 20XIntensity 0.2, 20XIntensity 0.1, 20X

XRR

| 2009 International EUVL Symposium Prague8

6xx vs 5xx Reflected Light Images of EUV Mask

180nm 154nm 90nm110nm126nm

6xx p55

5xx p72

Reticle HP

Teron shows good contrast on 22nm HP L/S Patterns

| 2009 International EUVL Symposium Prague9

Teron 610 Sensitivity Results – 32nm HP EUVIMEC Programmed Absorber Defect EUV Mask

• Mask capture rates are from three scans of each defect on each die

Teron 610 captured all printing programmed defects

| 2009 International EUVL Symposium Prague10

Teron captures Phase Defects on EUV BlanksExample: natural pit, 3.7 x 45.4 nm

-100 nm -50 0 50 100

100 nm

Focus(wafer scale)

AIT(LBNL)

Teron™610

30 21 -6 -15 -24Focus (au)

Peak DUV raw signal = 5.1 %SNR = 19 See S. Stokowski presentation Wed 10:10am

EUV Blank provided by AGC, AIT images from Sematech

| 2009 International EUVL Symposium Prague11

Long Term EUV Mask Qualification Targets & Scorecard

Should Meet Target GoodMay Meet Target MediumDifficult to Meet Target Poor

Node (nm HP) 32 22 16 22 16 16 16 16 16 16

Inspection System 6XX+ 6XX+EUV Actinic 28XX+ EBI+ 28XX+ EBI+

Inspection Point Mask Mask Mask Mask Mask Wafer WaferMask Damage None None None Good Good Medium Medium Medium Good GoodResolution (vs. DR) Medium Poor Good Poor Good Poor Medium

Sensitivity ML Blank (nm z) 2.2 1.5 1.1 Good Poor Good Poor Poor Poor Medium

Sensitivity Mask 1D CD (nm) 13 9 6 Good Poor Good Poor Good Poor MediumSensitivity Mask 2D (nm) 26 18 13 Good Poor Good Poor Good Poor MediumCycletime Mask Shop (Hours) 4 4 4 Good Good Medium Good Poor Poor PoorSensitivity Mask Particles (nm) 26 18 13 Medium Poor Good Poor Good Poor MediumCycletime Requal (Hours) 2 2 2 Medium Medium Medium Good Poor Good PoorDevelopment Cost Good Good Poor Medium Good Good GoodTool Cost Medium Medium Poor Good Good Good Good

Requirements Inspection Systems

Actinic Pattern Inspection is the leading candidate for < 20nm HP

| 2009 International EUVL Symposium Prague12

EUVL Blank & Patterned Mask Inspection

DRAM Half-Pitch (nm) 32 22 16 11

Mask Damage None None None None

Resolution (vs. DR)

Sensitivity ML Blank (nm z) 2.2 1.5 1.1 0.8

Sensitivity Mask 1D CD (nm) 13 9 6 4

Sensitivity Mask 2D (nm) 26 18 13 9

Cycletime Mask Shop (Hours) 4 4 4 4

Sensitivity Mask Particles (nm) 26 18 13 9

Cycletime Requal (Hours) 2 2 2 2

InspectionRequirements

6XX (R&D)6XX+ (Prod)

EUV Actinic7XX Optics

Blank InspPattern Insp

Blank InspPattern Insp

• Risk/Cost-sharing• Sematech consortium

$

Teron (λ 193 nm)

7XX (λ 13.5 nm) Pilot tools 2013Production upgrade 2015

AIMS sub-system commonalities?

| 2009 International EUVL Symposium Prague13

TeronProduction EUV Blank & Pattern Insp• Enhanced optical imaging • Production-worthy EUV mask handling & cleanliness

Production EUV Blank & Pattern Insp• Full power high-brightness EUV source• High Speed Scanning

Initial EUV Blank & Pattern Insp• High NA reflected imaging• High speed scanning

• Low noise• No damage to EUV masks

Pilot 7xx: Actinic Blank Insp + R&D pattern Insp• Prototype hi-brightness EUV source• Low-speed scanning• Vacuum platform incl. contam ctrl & scanning stage• EUV microscope w/ bright-field imaging

KT Roadmap: EUVL Blank & Patterned Mask Inspection6XX enables 22nmHP EUVL. 7XX actinic inspection required ≤16nmHP.

CY2018CY2017CY2016CY2015CY2014CY2013CY2012CY2011CY2010CY2009

22 n

m H

P16

nm

HP

Development of EUV blank and patterning Production

Production

Development of EUV blank and patterning

7xx (λ=13.5nm) Development

6xx+

2 4 2 1# actinic tools: 1

β

Study

Launch

Actinic

| 2009 International EUVL Symposium Prague14

KLA-Tencor EUV Reticle Inspection Overview

K-T will provide the needed Inspection systems to support EUV development and production requirements.

We are collaborating with key EUV industry customers and leading suppliers to define near-term and long-term EUV requirements and solutions

For near-term 22 nm Half-Pitch EUV requirements,Enhancements to K-T 6xx reticle inspection platform will enable EUV Blank and Patterned Mask inspection and Reticle Requal.

For long-term sub-20 nm EUV requirements, There are several potential technology alternatives, each requiring new techniques and significant development.Investigation of actinic pattern inspection concepts is underway, and should be accelerated via consortium funding

| 2009 International EUVL Symposium Prague15

Sungmin Huh, Patrick Kearney, Abbas Rastegar, Frank Goodwin, Stefan Wurm, C.C. Lin

Toshio Nakajima, Masahiro Kishimoto, Mitsuhiko Komakine

Kenneth Goldberg, Iacopo Mochi

Ted Liang, Andy Ma

Acknowledgments

INTEL