Csd 19506 Kcs

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10

0 2 4 6 8 10 12 14 16 18 20

VGS- Gate-to- Source Voltage (V)

RDS(on)-On-StateResistance

(m) TC= 25C, I D= 100A

TC= 125C, I D= 100A

G001

0

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0 20 40 60 80 100 120 140

Qg- Gate Charge (nC)

VGS

-G

ate-to-SourceVoltage(V)

ID= 100AVDS= 40V

G001

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product

Folder

Sample &Buy

Technical

Documents

Tools &

Software

Support &Community

CSD19506KCSSLPS481B DECEMBER 2013 REVISED OCTOBER 2014

C S D 1 9 5 0 6 K C S 8 0 V N -C h a n n e l N e x F E T P o w er M O S F E T

1 FeaturesProduct Summary

1 Ultra-Low Qgand QgdTA = 25C TYPICAL VALUE UNIT

Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V

Avalanche Rated Qg Gate Charge Total (10 V) 120 nC

Qgd Gate Charge Gate to Drain 20 nC Pb-Free Terminal Plating

VGS= 6 V 2.2 m RoHS CompliantRDS(on) Drain-to-Source On Resistance

VGS= 10 V 2.0 m Halogen FreeVGS(th) Threshold Voltage 2.5 V

TO-220 Plastic Package

Ordering Information(1)2 ApplicationsDevice Package Media Qty Ship

Secondary Side Synchronous RectifierCSD195 06K CS TO-22 0 P la stic Pa ck ag e T ub e 5 0 Tu be

Motor Control(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

Abso lu te Maxi mum Rating sThis 80 V, 2.0 m, TO-220 NexFET powerMOSFET is designed to minimize losses in power TA = 25C VALUE UNITconversion applications. VDS Drain-to-Source Voltage 80 V

VGS Gate-to-Source Voltage 20 VSPACEContinuous Drain Current (Package limited) 150

Continuous Drain Current (Silicon limited),273

ID TC= 25C A

Continuous Drain Current (Silicon limited),193

TC= 100C

IDM Pulsed Drain Current(1) 400 A

PD Power Dissipation 375 W

TJ, Operating Junction and 55 to 175 CTstg Storage Temperature Range

Avalanche Energy, single pulseE

AS 832 mJ

ID= 129 A, L = 0.1 mH, RG= 25

(1) Max RJC = 0.4C/W, pulse duration100s, duty cycle1%.

RDS(on)v s VGS Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.
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CSD19506KCSSLPS481B DECEMBER 2013REVISED OCTOBER 2014 www.ti.com

Table of Contents

5.3 Typical MOSFET Characteristics..............................41 Feat ures .................................................................. 1

6 Device and Documentation Support .................... 72 Appl icat ions ........................................................... 16.1 Trademarks...............................................................73 Des cript ion ............................................................. 16.2 Electrostatic Discharge Caution................................74 Revision History..................................................... 26.3 Glossary....................................................................7

5 Specifications......................................................... 3 7 Mechanical, Packaging, and Orderable5.1 Electrical Characteristics...........................................3Information ............................................................. 8

5.2 Thermal Information..................................................37.1 KCS Package Dimensions........................................9

4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (February 2014) to Revision B Page

Changed Pulsed Drain Current Conditions ........................................................................................................................... 1

Updated the SOA inFigure 10 ............................................................................................................................................... 6

Changes from Original (December 2013) to Revision A Page

Increased Package Current Limit to 150 A ........................................................................................................................... 1

Increased Pulsed Drain Current to 400 A ............................................................................................................................. 1

Updated SOA Curve .............................................................................................................................................................. 5

2 Submit Documentation Feedback Copyright 20132014, Texas Instruments Incorporated

Product Folder Links: CSD19506KCS
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CSD19506KCSwww.ti.com SLPS481B D ECEMBER 2013 REVISED OCTOBER 2014

5 Specifications

5.1 Electrical Characteristics

(TA = 25C unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

STATIC CHARACTERISTICS

BVDSS Drain-to-Source Voltage VGS= 0 V, ID= 250A 80 V

IDSS Drain-to-Source Leakage Current VGS= 0 V, VDS= 64 V 1 A

IGSS Gate-to-Source Leakage Current VDS= 0 V, VGS= 20 V 100 nA

VGS(th) Gate-to-Source Threshold Voltage VDS= VGS, ID= 250A 2.1 2.5 3.2 V

VGS= 6 V, ID= 100 A 2.2 2.8 mRDS(on) Drain-to-Source On-Resistance

VGS= 10 V, ID= 100 A 2.0 2.3 m

gfs Transconductance VDS= 8 V, ID= 100 A 297 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance 9380 12200 pF

Coss Output Capacitance VGS= 0 V, VDS= 40 V, = 1 MHz 2260 2940 pF

Crss Reverse Transfer Capacitance 42 55 pF

RG Series Gate Resistance 1.3 2.6 Qg Gate Charge Total (10 V) 120 156 nC

Qgd Gate Charge Gate to Drain 20 nCVDS= 40 V, ID= 100 A

Qgs Gate Charge Gate to Source 37 nC

Qg(th) Gate Charge at Vth 25 nC

Qoss Output Charge VDS= 40 V, VGS= 0 V 345 nC

td(on) Turn On Delay Time 19 ns

tr Rise Time 11 nsVDS= 40 V, VGS= 10 V,IDS= 100 A, RG= 0td(off) Turn Off Delay Time 30 ns

tf Fall Time 10 ns

DIODE CHARACTERISTICS

VSD Diode Forward Voltage ISD= 100 A, VGS= 0 V 0.9 1.1 V

Qrr Reverse Recovery Charge 525 nCVDS= 40 V, IF= 100 A,di/dt = 300 A/strr Reverse Recovery Time 107 ns

5.2 Thermal Information (1)


THERMAL METRIC MIN TYP MAX UNIT

RJC Junction-to-Case Thermal Resistance 0.4C/W

RJA Junction-to-Ambient Thermal Resistance 62

(1) For more information about traditional and new thermal metrics, see theIC Package Thermal Metrics application report, SPRA953.

Copyright 20132014, Texas Instruments Incorporated Submit Documentation Feedback 3

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0 0.1 0.2 0.3 0.4 0.5

VDS- Drain-to-Source Voltage (V)

IDS

-Drain-to-SourceCurrent(A)

VGS=10VVGS=8VVGS=6V

G001

0

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0 1 2 3 4 5 6 7 8

VGS- Gate-to-Source Voltage (V)

IDS


TC= 125CTC= 25CTC= 55C

VDS= 5V

G001


5.3 Typical MOSFET Characteristics


Figure 1. Transient Thermal Impedance

Figure 2. Saturati on Characteri sti cs Figure 3. Transfer Characteristics


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0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

.

75 50 25 0 25 50 75 100 125 150 175 200

TC- Case Temperature (C)

NormalizedOn-StateResistance

VGS= 6VVGS= 10V

ID=60A

G001

0.0001

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8 1

VSD Source-to-Drain Voltage (V)

ISD

S

ource-to-DrainCurrent(A)

TC= 25CTC= 125C

G001

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

2.7

2.9

3.1

75 50 25 0 25 50 75 100 125 150 175 200


VGS(th)-

ThresholdVoltage(V)

ID= 250uA

G001

0

1

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4

5

6

7

8

9

10

0 2 4 6 8 10 12 14 16 18 20

VGS- Gate-to- Source Voltage (V)

RDS(on)-On-StateResistance

(m) TC= 25C, I D= 100A

TC= 125C, ID= 100A

G001

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140

Qg- Gate Charge (nC)

VGS

-Gate-to-SourceV

oltage(V)

ID= 100AVDS= 40V

G001

1

10

100

1000

10000

100000

0 10 20 30 40 50 60 70 80


C

Capacitance

(pF)

Ciss= Cgd+ CgsCoss= Cds+ CgdCrss= Cgd

G001


Typical MOSFET Characteristics (continued)


Figure 4. Gate Charge Figure 5. Capacitance

Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-To-Source Voltage

Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage



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50 25 0 25 50 75 100 125 150 175 200


IDS


G001

0.1

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100

1000

5000

0.1 1 10 100 1000


IDS

-Drain-to-SourceC

urrent(A)

10us100us

1ms10ms

DC

Single PulseMax RthetaJC= 0.4C/W

G001

10

100

1000

0.01 0.1 1

TAV- Time in Avalanche (mS)

IAV

-PeakAvalancheC

urrent(A)

TC= 25CTC= 125C

G001


Typical MOSFET Characteristics (continued)


Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature



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6 Device and Documentation Support

6.1 Trademarks

NexFET is a trademark of Texas Instruments.

6.2 Electrost atic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

6.3 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.


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7 Mechanical, Packaging, and Orderable Information

The following pages include mechanical packaging and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.



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7.1 KCS Package Dimensions

Pin Configuration

Position Designation

Pin 1 Gate

Pin 2 / Tab Drain

Pin 3 Source



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PACKAGE OPTION ADDENDUM

www.ti.com 18-Oct-2014

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (C) Device Marking

(4/5)

CSD19506KCS ACTIVE TO-220 KCS 3 50 Pb-Free

(RoHS)

CU SN N / A for Pkg Type -55 to 175 CSD19506KCS

(1)

The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND:Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production. Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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PACKAGE OPTION ADDENDUM

www.ti.com 18-Oct-2014

Addendum-Page 2

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IMPORTANT NOTICE

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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TIs terms

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TI assumes no liability for applications assistance or the design of Buyers products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers products and applications, Buyers should provideadequate design and operating safeguards.

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