Csd 19534 Kcs

VGS - Gate-to-Source Voltage (V)

RD

S(on) -

O

n-St

ate

Re

sista

nce

(m:

)

2 4 6 8 10 12 14 16 18 200

5

10

15

20

25

30

35

40

45

D007

TC = 25 C, I D = 30 ATC = 125 C, I D = 30 A

Qg - Gate Charge (nC)

V GS

- G

ate-

to-S

ourc

e V

olta

ge (V

)

0 2 4 6 8 10 12 14 16 180

2

4

6

8

10

D004

ID = 30 AVDS = 50 V

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product

Folder

Sample &Buy

Technical

Documents

Tools &

Software

Support &Community

CSD19534KCSSLPS530 JANUARY 2015

CSD19534KCS 100 V N-Channel NexFET Power MOSFET1 Features

Product Summary1 Ultra-Low Qg and Qgd TA = 25C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 16.4 nC

Qgd Gate Charge Gate-to-Drain 3.3 nC Pb-Free Terminal PlatingVGS = 6 V 16.3 m RoHS Compliant RDS(on) Drain-to-Source On-ResistanceVGS = 10 V 13.7 m Halogen Free

VGS(th) Threshold Voltage 2.8 V TO-220 Plastic Package

Ordering Information(1)2 ApplicationsDevice Package Media Qty Ship

Secondary Side Synchronous Rectifier CSD19534KCS TO-220 Plastic Package Tube 50 Tube Motor Control (1) For all available packages, see the orderable addendum at

the end of the data sheet.3 Description

Absolute Maximum RatingsThis 100 V, 13.7 m, TO-220 NexFET powerMOSFET is designed to minimize losses in power TA = 25C VALUE UNITconversion applications. VDS Drain-to-Source Voltage 100 V

VGS Gate-to-Source Voltage 20 VSPACEContinuous Drain Current (Package limited) 100

Continuous Drain Current (Silicon limited), 54ID TC = 25C A

Continuous Drain Current (Silicon limited), 38TC = 100C

IDM Pulsed Drain Current (1) 138 A

PD Power Dissipation 118 W

TJ, Operating Junction and 55 to 175 CTstg Storage Temperature Range

Avalanche Energy, single pulseEAS 54 mJID = 33 A, L = 0.1 mH, RG = 25

(1) Max RJC = 1.3C/W, pulse duration 100 s, duty cycle 1%.

RDS(on) vs VGS Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19534KCSSLPS530 JANUARY 2015 www.ti.com

Table of Contents5.3 Typical MOSFET Characteristics.............................. 41 Features .................................................................. 1

6 Device and Documentation Support.................... 72 Applications ........................................................... 16.1 Trademarks ............................................................... 73 Description ............................................................. 16.2 Electrostatic Discharge Caution................................ 74 Revision History..................................................... 26.3 Glossary .................................................................... 75 Specifications......................................................... 3

7 Mechanical, Packaging, and Orderable5.1 Electrical Characteristics........................................... 3Information ............................................................. 85.2 Thermal Information .................................................. 37.1 KCS Package Dimensions........................................ 9

4 Revision History

DATE REVISION NOTESJanuary 2015 * Initial release.

2 Submit Documentation Feedback Copyright 2015, Texas Instruments Incorporated

Product Folder Links: CSD19534KCS

CSD19534KCSwww.ti.com SLPS530 JANUARY 2015

5 Specifications

5.1 Electrical Characteristics(TA = 25C unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNITSTATIC CHARACTERISTICSBVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 A 100 VIDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 AIGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nAVGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 A 2.4 2.8 3.4 V

VGS = 6 V, ID = 30 A 16.3 20.0 mRDS(on) Drain-to-Source On-Resistance VGS = 10 V, ID = 30 A 13.7 16.5 mgs Transconductance VDS = 10 V, ID = 30 A 80 SDYNAMIC CHARACTERISTICSCiss Input Capacitance 1290 1670 pFCoss Output Capacitance VGS = 0 V, VDS = 50 V, = 1 MHz 257 334 pFCrss Reverse Transfer Capacitance 5.7 7.4 pFRG Series Gate Resistance 1.1 2.2 Qg Gate Charge Total (10 V) 17.1 22.2 nCQgd Gate Charge Gate-to-Drain 3.2 nCVDS = 50 V, ID = 30 AQgs Gate Charge Gate-to-Source 5.1 nCQg(th) Gate Charge at Vth 3.3 nCQoss Output Charge VDS = 50 V, VGS = 0 V 44 nCtd(on) Turn On Delay Time 6 nstr Rise Time 2 nsVDS = 50 V, VGS = 10 V,

IDS = 30 A, RG = 0 td(off) Turn Off Delay Time 9 nst Fall Time 1 nsDIODE CHARACTERISTICSVSD Diode Forward Voltage ISD = 30 A, VGS = 0 V 0.9 1.1 VQrr Reverse Recovery Charge 195 nCVDS= 50 V, IF = 30 A,

di/dt = 300 A/strr Reverse Recovery Time 72 ns

5.2 Thermal Information(TA = 25C unless otherwise stated)

THERMAL METRIC MIN TYP MAX UNITRJC Junction-to-Case Thermal Resistance 1.3 C/WRJA Junction-to-Ambient Thermal Resistance 62

Copyright 2015, Texas Instruments Incorporated Submit Documentation Feedback 3


VDS - Drain-to-Source Voltage (V)

I DS

- D

rain

-to-S

ourc

e C

urr

ent (A

)

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90

5

10

15

20

25

30

35

40

45

50

D002

VGS = 6 VVGS = 8 VVGS = 10 V

VGS - Gate-to-Source Voltage (V)

I DS

- D

rain

-to-S

ourc

e C

urr

ent (A

)

2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 60

10

20

30

40

50

D003

TC = 125 CTC = 25 CTC = -55 C


5.3 Typical MOSFET Characteristics(TA = 25C unless otherwise stated)

Figure 1. Transient Thermal Impedance

VDS = 5 V

Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics



VSD - Source-to-Drain Voltage (V)

I SD - So

urc

e-to

-Dr

ain

Curr

ent (A

)

0 0.2 0.4 0.6 0.8 1 1.20.0001

0.001

0.01

0.1

1

10

100

D009

TC = 25 CTC = 125 C

TC - Case Temperature ( C)

No

rma

lize

d O

n-St

ate

Re

sist

ance

-75 -50 -25 0 25 50 75 100 125 150 175 2000.4

0.7

1

1.3

1.6

1.9

2.2

2.5

D008

VGS = 6 VVGS = 10 V


V GS(

th) -

Th

resh

old

Volta

ge (V

)

-75 -50 -25 0 25 50 75 100 125 150 175 2001.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

3.4

D006 VGS - Gate-to-Source Voltage (V)

RD

S(o

n) -

O

n-St

ate

Re

sista

nce

(m:

)

2 4 6 8 10 12 14 16 18 200

5

10

15

20

25

30

35

40

45

D007

TC = 25 C, I D = 30 ATC = 125 C, I D = 30 A

Qg - Gate Charge (nC)

V GS

- G

ate-

to-S

ourc

e V

olta

ge (V

)

0 2 4 6 8 10 12 14 16 180

2

4

6

8

10

D004VDS - Drain-to-Source Voltage (V)

C - C

apac

itance

(pF)

0 10 20 30 40 50 60 70 80 90 1001

10

100

1000

10000

D005

Ciss = Cgd + CgsCoss = Cds + CgdCrss = Cgd


Typical MOSFET Characteristics (continued)(TA = 25C unless otherwise stated)

ID = 30 A VDS = 50 V

Figure 5. CapacitanceFigure 4. Gate Charge

ID = 250 A

Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage

ID = 30 A

Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage




I DS

- D

rain

-to-S

ourc

e C

urr

ent (A

)

-50 -25 0 25 50 75 100 125 150 175 2000

10

20

30

40

50

60

70

80

D012

VDS - Drain-to-Source Voltage (V)

I DS

- Dr

ain-

to-So

urc

e Cu

rren

t (A)

0.1 1 10 100 10000.1

1

10

100

1000

D010

DC10 ms1 ms

100 s10 s

TAV - Time in Avalanche (ms)

I AV

- Pe

ak Av

alan

che

Curr

ent (A

)

0.01 0.1 110

100

D011

TC = 25q CTC = 125q C


Typical MOSFET Characteristics (continued)(TA = 25C unless otherwise stated)

Single Pulse, Max RJC = 1.3C/W

Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature




6 Device and Documentation Support

6.1 TrademarksNexFET is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.

6.2 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

6.3 GlossarySLYZ022 TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.




7 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.




7.1 KCS Package Dimensions

Pin ConfigurationPosition DesignationPin 1 Gate

Pin 2 / Tab DrainPin 3 Source



PACKAGE OPTION ADDENDUM

www.ti.com 22-Jan-2015

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (C) Device Marking(4/5)

Samples

CSD19534KCS ACTIVE TO-220 KCS 3 50 Pb-Free (RoHSExempt)

CU SN N / A for Pkg Type CSD19534KCS

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 22-Jan-2015

Addendum-Page 2

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherchanges to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latestissue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current andcomplete. All semiconductor products (also referred to herein as components) are sold subject to TIs terms and conditions of salesupplied at the time of order acknowledgment.TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TIs termsand conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessaryto support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarilyperformed.TI assumes no liability for applications assistance or the design of Buyers products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers products and applications, Buyers should provideadequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI components or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alterationand is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altereddocumentation. Information of third parties may be subject to additional restrictions.Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or servicevoids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirementsconcerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or supportthat may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards whichanticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might causeharm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the useof any TI components in safety-critical applications.In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TIs goal is tohelp enable customers to design and create their own end-product solutions that meet applicable functional safety standards andrequirements. Nonetheless, such components are subject to these terms.No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the partieshave executed a special agreement specifically governing such use.Only those TI components which TI has specifically designated as military grade or enhanced plastic are designed and intended for use inmilitary/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI componentswhich have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal andregulatory requirements in connection with such use.TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use ofnon-designated products, TI will not be responsible for any failure to meet ISO/TS16949.

Products ApplicationsAudio www.ti.com/audio Automotive and Transportation www.ti.com/automotiveAmplifiers amplifier.ti.com Communications and Telecom www.ti.com/communicationsData Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computersDLP Products www.dlp.com Consumer Electronics www.ti.com/consumer-appsDSP dsp.ti.com Energy and Lighting www.ti.com/energyClocks and Timers www.ti.com/clocks Industrial www.ti.com/industrialInterface interface.ti.com Medical www.ti.com/medicalLogic logic.ti.com Security www.ti.com/securityPower Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defenseMicrocontrollers microcontroller.ti.com Video and Imaging www.ti.com/videoRFID www.ti-rfid.comOMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.comWireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright 2015, Texas Instruments Incorporated

1Features2Applications3DescriptionTable of Contents4Revision History5Specifications5.1Electrical Characteristics5.2Thermal Information5.3Typical MOSFET Characteristics

6Device and Documentation Support6.1Trademarks6.2Electrostatic Discharge Caution6.3Glossary

7Mechanical, Packaging, and Orderable Information7.1KCS Package Dimensions

Date post:	05-Oct-2015
Category:	Documents
Upload:	carlos-gelves
View:	38 times
Download:	2 times