CURRICULAM VITAE

1. Name : Dr. MOHAMMAD JAWAID SIDDIQUI

2. Phone No. : +919634736626 (mobile)

3. Address: Dr. Mohammad Jawaid Siddiqui Professor, Electronics Engineering Department College of Engineering Aligarh Muslim University, Aligarh INDIA-202002

Email : mjs_siddiqui@rediffmail.com;

mjsiddiqui.el@amu.ac.in; mjsatamu@gmail.com

4. Field of Specialization : Semiconductor Device Modeling

5. Academic Qualifications :

S.

No.

Degree Board/

University/

Institution

Division % Marks Year Specialization

1. High

School

U.P. Board I 77 % 1982 Physics, Chem, and

Math.

2. P.U.C. AMU, Aligarh I 74.9 % 1983 Physics,Chem.,and

Math.

3. B.Sc.Engg. AMU, Aligarh I 85.3 % 1988 Electrical Engg.

(low current)

4. M.Sc.Engg. AMU, Aligarh I 75.5 % 1993 Electronics Engg.

5 Ph.D. IIT,Kanpur - CPI=8.5 2002 Semiconductor

Device Modeling

6. Scholarships :

Merit scholarship during B Sc. Engg. From 1984- to 1988.

Qualified the GATE wit 89.2 percentile for P.G. Scholarship.

Quality Improvement Program Scholarship from 1998 to 2001 for

Ph.D. at Indian Institute of Technology ,Kanpur.

7. Awards:

Best Paper Presentation Award for the paper presented at National

Systems Conference (NSC-2000), Bangalore, Dec. 2000.

Best Teacher of Year 2009 award from Electrical Engineering Department, Taibah

University(TU), Saudi Arabia.

2nd Best Paper Award (IMPACT 2013) AMU, Aligarh

7. Ph.D., M.Tech. Dissertations and B.Tech. Projects Guided:

Number of Ph.D. Supervised = 3

Aisha Malik, “Study of Doped Titanium Dioxide Based Solar Cells”

Saifur Rahman, “An approach & Evaluation of Intelligent Sensors and their

application”

Hasin Alam, “Development of a Sensor System & its application”

Number of Ongoing Ph.D. = 4

Gulrez Anjum, “Modelling and Simulation of Semiconducting Multilayer

Nano- Structures”

Man Mohan Singh, “Modelling and Simulation of Resonant Tunneling Diode”

Abo Bakar Khan, “Modelling and Simulation of High Electron Mobility

Transistors”

Saima Beg, “ Computational modeling and Simulation of III-V SC Based

Lasing Nano-Hetrostructures”

Number of M.Tech. Projects and dissertations Guided = 40

Number of B.Tech. Projects Guided = 40

8. PROJECTS (Completed and Ongoing)

SAR 30000/- on Modeling of Kink Effect in Qassim University, Saudi Arabia-

2006

SAR 25000/- on SST in Taibah University Saudi Arabia-2008

Contributor in DRS-II Project from UGC , Rs. 64 Lakhs, 2009-2014

Rupees 1.85 Crore DSA approved by UGC to be operational since April 2015

(Deputy Coordinator of DSA Program)

9. Research and Publications :

(a) Book Chapters:

1. Nazir A. Sheikh, Yasir M. Shariff, Samir M. Shariff and M. Jawaid Siddiqui,

“Superfluous Curriculum Burdens on Mechanical Engineering Students, Causes and

Remedies”, Innovative Techniques in Instruction Technology, E-learning, E-

assessment, and Education published by SprigerLink 2008, 375-380, DOI: 10.1007/978-

1-4020-8739-4_65.

2. Samir M. Shariff, M. Jawaid Siddiqui, Nazir A. Sheikh and Yasir M. Shariff, “Response

of First Active Teaching / Learning Course at Taibah University” , Innovative

Techniques in Instruction Technology, E-learning, E-assessment, and Education

published by SprigerLink 2008, 366-369, DOI: 10.1007/978-1-4020-8739-4_63

(b) Research Papers Published in Refereed Journals:

1. M. J. Siddiqui and S. Qureshi, “An Empirical model for leakage current in Poly-Si

TFTs”, Solid State Electronics, Vol.-44, No.11, 2000, pp: 2015-2019.

2. M. J. Siddiqui and S. Qureshi, “Surface Potential Based Charge Sheet Model Poly-Si

TFTs Without Considering Kink Effect”, Microelectronics Journal, Vol.-32, No.33,

2001, pp: 235-240.

3. S. Qureshi and M. J. Siddiqui, “A DC Charge Sheet Turn-on Model for I-V

Characteristics of Doped Poly-Si TFTs”, Semicond. Sci. and Tech., Vol. 17, No.6,

2002, Pp: 526-533.

4. P. A. Alvi, K. M. Lal, M. J. Siddiqui, and S. Alim H. Naqvi ,”Carbon nanotubes field

effect transistors (CNTFETs)”: A review, Indian Journal of Pure & Applied Physics,

Vol. 43, Dec. 2005, 899-904

5. M. J. Siddiqui, S. Qureshi, S. M. ALShariff, “A Simple Semi-Analytical Model for the

Intrinsic n-Channel Poly-Silicon Thin Film Transistors”, Electron Technology Internet

Journal, Vol-39, 2007, pp1-4.

6. P. A. Alvi, Sapna Gupta, M. J. Siddiqui, G. Sharma, and S. Dalela, “Modeling and

Simulation of GaN/Al0.3Ga0.7N New Multilayer Nano-Heterostructure” Phsica B 405

(2010) 2431-2435

7. P. A. Alvi, Sapna Gupta, Pooja V. , G. Sharma, and M. J. Siddiqui, “Effects of Al

concentration on GaN/AlxGa1-xN new modeled multilayer nano-heterostructure”

Phsica B 405 (2010) 3624-3629.

8. Mohammad Kaifi, M.J.Siddiqui, T.A.Abbasi and M. U. Khan, “Simulation of SOI

MOSFET using ATLAS”, Journal of Electronic & Electrical Engineering, Vol. 1 , Issue

2, 2010, pp: 09-12.

9. Khalid, J.K.Singh, M.J.Siddiqui, S.A. Rahman, “IMPLEMENTATION OF

THRESHOLD LOGIC GATEs USING RTDs” , Journal of Electronic & Electrical

Engineering, Vol. 1 , Issue 2, 2010, pp: 13-17.

10. P A Alvi, Pyare Lal, S Dalela and M J Siddiqui, “An extensive study on simple and

GRIN SCH- based In0.71Ga0.21Al0.08As/InP lasing heterostrucutres” ,Phys. Scr. 85

(2012) 035402 (9pp).

11. Sapna Gupta , F. Rahman b, M. J. Siddiqui c, P.A.Alvi,” Strain profile in nitride based

multilayer nano-heterostructures” Physica B 411 (2013) 40–47

12. Farhan Aziz and M. J. Siddiqui, “ Simulation and Optimization of δ-doped

AlInAs/InGaAs HEMT for High Frequency Applications” International Journal of

Emerging Technologies in Computational and Applied Sciences IJETCAS 13-107; ©

2013, pp 43-48

13. Uma Sharma and M J Siddiqui,” Performance Evaluation of Photovoltaic Cell using

MATLAB” Invertis Journal of Renewable Energy, Vol. 3 No. 1, 2013; pp:52-57

14. HASIN ALAM, S. HASAN SAEED & M. JAWAID SIDDIQUI, “DEVELOPMENTS

IN ELECTRONIC NOSE SYSTEMS”, International Journal of Electronics,

Communication & Instrumentation Engineering, Research and Development

(IJECIERD) ISSN 2249-684X, Vol. 3, Issue 4, Oct 2013, 105-112

15. Aisha Malik, S. Hameed, M. J. Siddiqui, M. M. Haque, andM.Muneer, “Influence of

Ce Doping on the Electrical and Optical Properties of TiO2 and Its Photocatalytic

Activity for the Degradation of Remazol Brilliant Blue R” International Journal of

Photoenergy Volume 2013, Article ID 768348, 9 pages;

http://dx.doi.org/10.1155/2013/768348

16. Aisha Malik, , S. Hameed, M. J. Siddiqui, M. M. Haque, K. Umar, A. Khan, and M.

Muneer, “Study of Electrical and Optical Properties of Synthesized Tungsten Doped

and Undoped Titanium Dioxide Nanoparticle: Improved Performance in Dye

Sensitized Solar Cells ” , Journal of Nanoengineering and Nanomanufacturing, Vol. 4,

pp. 1–7, 2014(www.aspbs.com/jnan)

17. Aisha Malik, , S. Hameed, M. J. Siddiqui, M. M. Haque, A. Khan, and M. Muneer,

“Effect of Doping on Electrical and Optical Properties of Zirconium Doped and

Undoped Titanium Dioxide Nanoparticle ” , Advanced Science, Engineering and

Medicine, Vol. 6, pp. 1–7, 2014 (www.aspbs.com/asem)

18. Aisha Malik, , S. Hameed, M. J. Siddiqui, M. M. Haque, K. Umar, A. Khan, and M.

Muneer, “Electrical and Optical Properties of Nickel- and Molybdenum-Doped

Titanium Dioxide Nanoparticle: Improved Performance in Dye-Sensitized Solar

Cells” , Journal of Materials Engineering and Performance , September 2014, Volume

23, Issue 9, pp 3184-3192

19. Meha Sharma, Rashmi Yadav, Pyare Lal, M. J. Siddiqui, S. Dalela, and P. A. Alvi,

“Lasing Characteristics of InGaP/GaAs Nanoscale Heterostructures” , Advanced

Science, Engineering and Medicine Vol. 6, 1–7, 2014 (www.aspbs.com/asem)

20. Manav Jain and Mohammad Jawaid Siddiqui, “Electronic Fire Alarm”, Advance in

Electronic and Electric Engineering. ISSN 2231-1297, Volume 4, Number 2 (2014),

pp. 135-140

21. Swati Jha, Meha Sharma, Pyare Lal, Rashmi Yadav, M. J. Siddiqui, and P. A. Alvi,

“Gain Simulation of InGaP/GaAs Heterostructure” International Journal Of

Engineering Research and Technology (IJERT) AMRP-2013 Conf. Proc.

22. H. K. Nirmal , Nisha Yadav , S. Dalela, Amit Rathi , M. J. Siddiqui , P. A. Alvi,”

Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60

nano-heterostructure under high pressure ” , Physica E 80 (2016) 36–42.

23. A. K. Singh, Md. Riyaj, S. G. Anjum, Nisha Yadav, Amit Rathi, M. J. Siddiqui and P.

A. Alvi. “Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6

nano-scale heterostructure under external uniaxial strain”, Superlattices and

Microstructures (Elsevier) 98 (2016) 406-415.

24. H. K. Nirmal, S. G. Anjum, P. Lal, A. Rathi, S. Dalela, M. J. Siddiqui, P. A. Alvi, “Field

effective band alignment and optical gain in type-I

Al0.45Ga0.55As/GaAs0.84P0.16nano-heterostructures,” Optik (Stuttg)., vol. 127, no.

18, pp. 7274–7282, 2016.

25. Nisha Yadav, Garima Bhardwaj, S. G. Anjum, S. Dalela, M. J. Siddiqui, And P. A.

Alvi, “Investigation of high optical gain in complex type-II InGaAs/InAs/GaAsSb

nano-scale heterostructure for MIR applications”, Applied Optics, Vol. 56, No. 15 ,

(2017), pp. 4243-4249.

26. Garima Bhardwaj, Nisha Yadav, S. G. Anjum, M. J. Siddiqui, And P. A. Alvi, “Uniaxial

strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale

heterostructure”, Optik - International Journal for Light and Electron Optics (Elsevier),

Vol. 146, (2017), pp. 8-16.

27. A. K. Singh et al., “Anisotropy and optical gain improvement in type-II

In0.3Ga0.7As/GaAs0.4Sb0.6nano-scale heterostructure under external uniaxial strain,”

Superlattices Microstruct., vol. 98, pp. 406–415, 2016.

28. S. G. Anjum, Sandhya K., A. B. Khan, A. M. Khan, M. J. Siddiqui, P. A. Alvi, “Effects

of variation of quantum well numbers on gain characteristics of type-I InGaAsP/InP

nano-heterostructure”, Bulletin of Electrical Engineering and Informatics, ISSN: 2089-

3191, Vol. 6, No. 3, (2017), pp. 301-310.

29. A. B. Khan, S. G. Anjum, and M. J. Siddiqui, “Simulation Study of Various Layers and

Double δ -Doping Effect on Device Performance of InAlAs/ InGaAs/InP HEMT,” J. of

New Tec. and Materials, vol. 07, pp. 76–82, 2017.

30. A. B. Khan, M. Sharma, M. J. Siddiqui, and S. G. Anjum, “Examine and Interpreting

the RF and DC Characteristics of AlGaN/GaN HEMT and MOS-HEMT,” Adv. Sci.

Eng. Med., vol. 9, no. 4, pp. 282–286, Apr. 2017.

31. A. B. Khan, M. Sharma, S. G. Anjum, and M. J. Siddiqui, “2D Simulation Study of DC

and RF Characteristics of Double Heterostructure AlGaN/GaN DG-HEMT Device for

High-Frequency Application,” Mater. Focus, vol. 6, no. 5, pp. 531–538, Oct. 2017.

32. A. B. Khan, M. Sharma, M. J. Siddiqui, and S. G. Anjum, “Performance Analysis of

AC and DC Characteristics of AlGaN/GaN HEMT at Various Temperatures,” Trans.

Electr. Electron. Mater., vol. 19, no. 2, pp. 90–95, Apr. 2018.

33. A. B. Khan, S. G. Anjum, and M. J. Siddiqui, “Effect of Barrier Layer Thickness on

AlGaN/GaN Double Gate MOS-HEMT Device Performance for High-Frequency

Application,” J. Nanoelectron. Optoelectron., vol. 13, no. 1, pp. 20–26, Jan. 2018.

34. S. Ahmad, M. A. Raushan, S. Kumar, S. Dalela, M. J. Siddiqui, and P. A. Alvi,

“Modeling and Simulation of GaN based QW LED for UV Emission,” Opt. - Int. J.

Light Electron Opt., vol. 158, pp. 1334–1341, 2018.

35. Mohd Adil Raushan, Naushad Alam, Mohd Waseem Akram, Mohd Jawaid Siddiqui,

“Impact of asymmetric dual-k spacers on tunnel field effect transistors”, Journal of

Computational Electronics (2018) vol. 17, no. 2, pp. 756-765. DOI: 10.1007/s10825-

018-1129-5.

36. Mohd Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui, “Performance

Enhancement of Junctionless Tunnel Field Effect Transistor Using Dual-k Spacers”,

Journal of Nanoelectronics and Optoelectronics, Vol. 13, pp. 1–9, 2018.

DOI:10.1166/jno.2018.2334.

37. Mohd Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui, “Dopingless Tunnel

Field-Effect Transistor with Oversized Back Gate: Proposal and Investigation”, IEEE

Transactions on Electron Devices, (2018) vol. 65, issue. 10, pp. 4701-4708. DOI:

10.1109/TED.2018.2861943

38. A. B. Khan, M. J. Siddiqui, “Impact of Back Barrier with Back Gate on Device

Performance of AlGaN/GaN DG-HEMT” J. Nanoelectron. Optoelectron .

39. Mohd Adil Raushan , Student Member, IEEE , Naushad Alam , and Mohammad Jawaid

Siddiqui,” Dopingless Tunnel Field-Effect Transistor With Oversized Back Gate:

Proposal and Investigation” IEEE TRANSACTIONS ON ELECTRON DEVICES,

VOL. 65, NO. 10, OCTOBER 2018, pp 4701-4708.

(c) Papers Presented/Published in International and National Conferences:

1. S. J. Arif, M. J. Siddiqui and W. Ahmad, “Simple Methods for Measurement and

Control of Power Frequency Deviations”, Proc. 14th National Systems Conference,

A.M.U., Aligarh, 12-14 March 1991, pp: 571-573.

2. M. S. Beg, M. Jawaid Siddiqui and R. Muzammil, “Computer Generation and

Verification of Raleigh Fading Channel for Mobile Radio Applications”, Proc. National

Symposium on Cellular Radio and Mobile Communication (CRAM-92), A.M.U.,

Aligarh, 28-29 May 1992, pp: 90-98.

3. M. S. Beg and M. J. Siddiqui, “Performance Assessment of Some Estimators for a

Mobile Radio Channel”, Proc. 9th National Convention of Electronics and

Telecommunication Engineers, University of Roorkee, 30-31 March, 1994, pp: 94-99.

4. M. J. Siddiqui, M. S. Umar and S. A. Rehman, “Modeling and Computer Simulation of

Multipath Fading Channel”, National Conference on Communication-2001, CSIO

Chandigarh, 1-2 Dec. 1995.

5. M. J. Siddiqui, “Performance Evaluation of Combined Estimator and Detector over a

Flat Fading Channel for Mobile Radio Application”, Proc. 19th National Systems

Conference (NSC-95), P.S.G. College of Technology, Coimbatore (TN), 14-16

December 1995, pp: 351-355.

6. M. J. Siddiqui, T. Ajmal, R. Rizvi and N. Sami, “Laser and Tissue Interaction”, Proc.

1st International Conference organized by Molecular Association, A.M.U. Aligarh, 18-

20 March 1996.

7. M. J. Siddiqui, Ekram Khan, A. Ehtisham, “Spread Spectrum in Mobile Radio

Application” Proc. National Conference on Communication Highways, MACT, R.E.C.

Bhopal, 11-13 Oct. 1996.

8. T. Ajmal and M. J. Siddiqui, “Optical Fiber Based Biomedical Sensor”, Proc. Of

National Symposium and Exposition on Modern Instrumentation, 27-28 February 1999,

pp: 15-18.

9. M. J. Siddiqui and S. Qureshi, “An Explicit Surface Potential Formulation for Doped

Poly-Si TFTs”, Proc. 19th National Systems Conference (NSC-2000), ISRO,

Bangalore, pp: 513- 519.

10. M. Jawaid Siddiqui, Samir M Al-Sharieff and A. F. Almarshoud, “A Simple Model for

the Kink Effect for the intrinsic p-channel Polysilicon thin film transistors” presented

in 18TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM-06)

King Fahd University of Petroleum and Minerals Dhahran, Saudi Arabia, 16-19,

December, 2006.

11. Nazir A. Sheikh, Yasir M. Shariff, Samir M. Shariff and M. Jawaid Siddiqui,

“Superfluous Curriculum Burdens on Mechanical Engineering Students, Causes and

Remedies”, presented in International Joint Conferences on Computer, Information,

and Systems Sciences, and Engineering (CIS2E 07) December 3 - 12, 2007 Technically

Co-Sponsored by: Institute of Electrical & Electronics Engineers (IEEE), University

of Bridgeport , USA.

12. Samir M. Shariff, M. Jawaid Siddiqui, Nazir A. Sheikh and Yasir M. Shariff, “Response

of First Active Teaching / Learning Course at Taibah University” , presented in

International Joint Conferences on Computer, Information, and Systems Sciences, and

Engineering (CIS2E 07) December 3 - 12, 2007 Technically Co-Sponsored by: Institute

of Electrical & Electronics Engineers (IEEE), University of Bridgeport , USA.

13. M. Jawaid Siddiqui, Samir M. Shariff, and M. U. Khan, “A Proposed Model for Kink

Effect in the SOI MOSFETS” Proceedings of Modern Trends in Electronics and

Communication Systems.(MTECS-2008) AMU Aligarh pp 13-17, 2008.

14. M. Jawaid Siddiqui and Samir M. Al-Sahriff , “A SIMPLE DIGITAL CIRCUIT FOR

ENHANCED DATA SECURITY TIME HOPPING SPREAD SPECTRUM

SYSTEM” Accepted for presentation in “The IAENG International Conference” on

Communication Systems and Applications (ICCSA'09) Hong Kong, 18-20 March,

2009.

15. Mohammad Kaifi, M.J.Siddiqui, T.A.Abbasi and M. U. Khan, ““Simulation of SOI

MOSFET using ATLAS”, ”, 3rd National Conference On Wireless Communication &

VLSI Design, NCWCVD-2010, 27-28 March-2010 Organised by Department of

Electronics & Comm. Engg. Gwalior Engineering College and Technically Supported

by IEEE MP Subsection.

16. Khalid, J.K.Singh, M.J.Siddiqui, S.A. Rahman, “IMPLEMENTATION OF

THRESHOLD LOGIC GATEs USING RTDs” , ”, 3rd National Conference On

Wireless Communication & VLSI Design, NCWCVD-2010, 27-28 March-2010

Organised by Department of Electronics & Comm. Engg. Gwalior Engineering College

and Technically Supported by IEEE MP Subsection.

17. Farhan Aziz, M. J. Siddiqui and M. U. Khan, “Impact of δ doping and spacer layer

thickness variation on high density 2DEG in High Electron Mobility Transistors”, 28-

30 March-2011 International Conference on Electronics, Information and

Communication Systems Engineering (ICEICE-2010), Organised by M. B. M. College

of Engineering and technology, Jodhpur (Rajasthan).

18. Pyare Lal, M. J. Siddiqui and P. A . Alvi, “Modeling and Simulation of AlGaAs/GaAs

SQW Laser for Optical Communication System” IEEE Sponsored International

Conference on Multimedia Signal Processing and Communication Technologies

(IMPACT-2011) from 17th to 19th Dec. 2011.

19. Aisha Malik, S. Hameed, M.J. Siddiqui, M.M. Haque and M. Muneer, “Study of

Photoconductivity of Nanocrystalline Titanium Dioxide used in Dye Sensitized Solar

Cell” IEEE Sponsored International Conference on Multimedia Signal Processing and

Communication Technologies (IMPACT-2011) from 17th to 19th Dec. 2011.

20. Mohammad Kaifi and M.J.Siddiqui, “ Kink Model for SOI MOSFET” , in IEEE

Sponsored International Conference on Multimedia Signal Processing and

Communication Technologies (IMPACT-2011) from 17th to 19th Dec. 2011.

21. M. Jawaid Siddiqui, M. Khalid, T. A. Abbasi and M. U. Khan, “Performance

Evaluation of Threshold Logic Gates Using RTDs ” 2nd November-2012, National

Conference on Electronics, Communication, and Sensing & Signal Processing

Technologies (ECSS 12) Organised by 'SURENDRA INSTITUTE OF

ENGINEERING & MANAGEMENT’ at Siliguri (West Bengal).

22. Vishal Paliwal, Dr. Mohammad Jawaid Siddiqui, Utkarsh, “Non-Enzymatic Approach

to Bio-sensing”, Proceeding of National Conference on “Advances & Research in

Electrical System Technology (AREST’13) February 15-16, 2013 at ARYA

INSTITUTE OF ENGINEERING & TECHNOLOGY, Jaipur.

23. Manav Jain, Mohammad Jawaid Siddiqui, “PENETRATION PHENOMENON OF

LIGHT THROUGH DAILY USE PRODUCTS- MILK AND OIL, presented in

Conference on Advances in Communication and Control Systems - 2013 (CAC2S

2013) at Dehradun (ISBN (on-line): 978-90-78677-66-6).

24. Mohd. Zihaib Khan, Mohd. Samar Ansari and Mohd Jawaid Siddiqui, “Digitally

Programmable Second-Order Current mode Continuous-time Filters” , IEEE

Sponsored Saudi International Conferenceon Electronics, Communications and

Photonics (SIECPC), 27-30 April 2013 2013 E-ISBN :978-1-4673-6194-1; Print

ISBN:978-1-4673-6196-5.

25. Aboo Bakar Khan, M. J. Siddiqui and Man Mohan Singh, “Theoretical Analysis of

Piezoelectric Cantilever Sensor” IEEE Sponsored International Conference on

Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 4-6

June 2013, ISBN: 978-1-4673-5150-8.

26. Man Mohan Singh, Dr. M. J. Siddiqui, Aboo Bakar Khan; “Comparative

Characterization of Human Blood along with Viscosity Measurement” IEEE

Sponsored International Conference on Microelectronics, Communications and

Renewable Energy (AICERA/ICMiCR), 4-6 June 2013, ISBN: 978-1-4673-5150-8.

27. Man Mohan Singh, Dr. M. J. Siddiqui, Aboo Bakar Khan and Mrs Thaseena CK,

“Simulation Study of I-V Characteristics of RTD with variation in Doping

Concentration” IEEE Sponsored International Conference on Multimedia Signal

Processing and Communication Technologies (IMPACT-2013) from 23rd to 25th Nov.

2013.

28. Aboo Bakar Khan, Dr. M. J. Siddiqui Man Mohan Singh, and Mrs Thaseena CK,

“Impact of Gate Length and Schottky Layer Variation on Device Performance of

Double δ-Doped InAlAs/InGaAs HEMT ” IEEE Sponsored International Conference

on Multimedia Signal Processing and Communication Technologies (IMPACT-2013)

from 23rd to 25th Nov. 2013.

29. A. R. khan, Dr. M. J. Siddiqui and Dr. S.S.K. Iyer, “Advanced Technique of Vertical

Organic Thin Film Transistor ” , ” IEEE Sponsored International Conference on

Multimedia Signal Processing and Communication Technologies (IMPACT-2013)

from 23rd to 25th Nov. 2013.

30. Saifur Rahman, S. Hasan Saeed, M. J. Siddiqui, Saima Rahman, “POLYMERIC

CHEMORESISTOR MODEL USE IN DESIGN AND SIMULATION OF SENSOR”,

IEEE Sponsored International Conference on Multimedia Signal Processing and

Communication Technologies (IMPACT-2013) from 23rd to 25th Nov. 2013.

31. Syed Gulraze Anjum, Mohammad Jawaid Siddiqui, “Multiple Quantum Well Based

Lasing Nanostructures: A Review”, IEEE Sponsored International Conference on

Multimedia Signal Processing and Communication Technologies (IMPACT-2013)

from 23rd to 25th Nov. 2013.

32. Meha Sharma, Pyare Lal, M. J. Siddiqui, P. A. Alvi, “Carrier Dependent Gain

Characteristics Of InGaP/GaAs Nano-heterostructure ” , IEEE Sponsored International

Conference on Multimedia Signal Processing and Communication Technologies

(IMPACT-2013) from 23rd to 25th Nov. 2013.

33. Pyare Lal, Rashmi Yadav, Meha Sharma, F. Rahman, M. J. siddiqui, and P. A. Alvi,

“Gain Investigation on Strained InGaAlAs/InP Lasing Nano-Heterostructure”, IEEE

Sponsored International Conference on Multimedia Signal Processing and

Communication Technologies (IMPACT-2013) from 23rd to 25th Nov. 2013.

34. Siddhant Mittal, Laxman Prasad Goswami, M J. Siddiqui, Aisha Malik1, “Dye

Sensitized Zr Doped TiO2 Based Solar Cells” , International Conference on

Nanoscience & Nanotechnology “Aligarh Nano IV International 2014”: Department of

Applied Physics, Aligarh Muslim University, Aligarh, India March 08-10, 2014.

35. H. K. Nirmal, M. J. Siddiqui, P. A. Alvi, “Optimization of Optical Gain in

GaAsP/AlGaAs Nano-Heterostructures” National Conference on “Advances in

materials and materials processing (ammp-15)” at National Institute of Technology

Srinagar, 22-23rd may, 2015.

36. M. M. Singh, M. J. Siddiqui, A. B. Khan, and S. G. Anjum, “Effect of barriers length

and doping concentration on GaAs/AlGaAs RTD,” in 2015 Annual IEEE India

Conference (INDICON), 2015, pp. 1–5.

37. S. G. Anjum, M. J. Siddiqui, A. B. Khan, M. M. Singh,” Investigation of material gain

of InGaAs/InGaAsP/InP lasing heterostructure”; IEEE sponsored International

Conference MicroCom-16 held at NIT Durgapur, 23-25 January, 2016.

38. Man Mohan Singh, Mohd. Jawaid Siddiqui and Anupriya Saxena, “Comparative

Simulation of GaAs and GaN based Double Barriers-Resonant tunneling Diode”,

published in Elsevier Science in the Open-access Procedia Computer Science series,

2016.

39. S. G. Anjum, Nisha Yadav, H. K. Nirmal, Meha Sharma, M. J. Siddiqui and P. A.

Alvi. “Investigation of optical response in type-II InAs/AlSb nano-scale

heterostructure: A novel dual structure”, International Conference on Processing of

Materials, Minerals and Energy (PMME), held at PITS, Ongole, AP, 29-30 July,

2016, accepted for publication in ELSEVIER: Materials Today Proceedings.

40. S. G. Anjum, Nisha Yadav, M. J. Siddiqui , P. A. Alvi, “Optical Characteristics of Type-

II InGaAs/GaAsSb QW Heterostructure under Electric Field”, OSA sponsored 13th

international conference on fibre optics and photonics, 04-08 December,

PHOTONICS-2016, held at IIT kanpur.

41. A. Bakar Khan, M. Jawaid Siddiqui, and S. Gulraze Anjum, “Simulation study of DC

characteristics of double quantum well AlGaN/GaN double gate HEMT structure,”

Proc. Int. Conf. Nanotechnology. Better Living, vol. 3, no. 1, pp. 117–117, 2016.

42. Aboo Bakar Khan, Dr. Mohammad Jawaid Siddiqui and Syed Gulraze Anjum,

“Simulation Study of Double Quantum Well AlGaN/GaN Single Gate and Double

Gate HEMT Structures”, International Conference on Nanotechnology & STEM-ER

at AMU, Aligarh during March 12-15, 2016.

43. Aboo Bakar Khan, Dr. Mohammad Jawaid Siddiqui, Man Mohan Singh and Syed

Gulraze Anjum, “Simulation Study of Single Doping and Double Doping InP Based

InGaAs/InAlAs HEMT”, IEEE International Conference on Emerging Trends in

Electrical, Electronics & Sustainable Energy Systems at KNIT Sultanpur, India,

during March 11-12, 2016.

44. A. Bakar Khan, M. J. Siddiqui, and S. G. Anjum, “Comparative Study of Single and

Double Quantum Well AlGaN/GaN HEMT Structures for High Power GHz

Frequency Application,” Mater. Today Proc., vol. 4, no. 9, pp. 10341–10345, Jan.

2017.

45. S. G. Anjum, A. B. Khan, M. J. Siddiqui, P. A. Alvi, “Analysis of optical gain

characteristics of type-I InGaAsN/GaAs (dilute N) based lasing nano-heterostructure”,

International conference on nanomaterials and nanotechnology, 01-03 March,

ICNANO-2017, held at Vinobha bhave research institute, Allahabad.

46. Parvez Ahmad Alvi, Nisha Yadav, Garima Bhardwaj, S. G. Anjum, M. J. Siddiqui,

Sandhya K, “Quantum Well Width Effect on Intraband Optical Absorption in Type-II

InAs/AlSb Nano-scale Heterostructure”, Springer sponsored International

Conference on Optical & Wireless Technlogies (OWT), 18th – 19th March, 2017 held

at NIT jaipur.

47. S. Ahmad, A. Raushan, M. J. Siddiqui, M. A. Raushan, and M. J. Siddiqui,

“Achievements and Perspectives of GaN based Light Emitting Diodes : A Critical

Review,” International Conference on Trends in Electronics and Informatics 2017,

2017.

48. S. Ahmad, A. Raushan, M. J. Siddiqui, M. A. Raushan, and M. J. Siddiqui, Imtiaz

Ashraf, “Achievements and Limitations of UV-LEDs: A Critical Review,”

International Conference on Electrical, Electronics, Computers, Communication,

Mechanical and Computing (EECCMC), 2018.

49. A. B. Khan, M. Sharma, S. G. Anjum, and M. J. Siddiqui, “Influence of back barrier

layer thickness on device performance of AlGaN / GaN MOS-HEMT,” Adv. Mater.

Proc., vol. 3, no. 7, pp. 480–484, 2018.

50. Mohd Adil Raushan, Naushad Alam, Shameem Ahmad, Mohd Jawaid Siddiqui, “-

Improved performance of Dual material gate Junctionless TFET using asymmetric

dual-k spacers”, IEEE International Conference on Electrical, Electronics, Computers,

Communication, Mechanical and Computing (EECCMC) 2018.

51. A. B. Khan, M. J. Siddiqui, “Performance Analysis of AlGaN/GaN MOS-HEMT

Device with Various Gate Oxide” 2nd International Conference on Nano Science &

Engineering Applications, Institute of Science and Technology, JNTU, Hyderabad,

October 2018.

8. Details of Employment:

S.

No. Institute Designation

Period Reasons for

leaving Nature of Duties

From To

1. AMU,

Aligarh. Lecturer 11-10-1988 18-03-1997 Promotion Teaching and

Research

2. AMU,

Aligarh. Reader 19-03-1997 31-10-2004

Foreign

Assignment

Teaching and

Research

3.

Qassim

University

(Saudi

Arabia)

Assistant

Professor 1-11-2004

16-08-

2006

To move Holy

City Madinah

Teaching and

Research

4

Taibah

University

(Saudi

Arabia)

Assistant

Professor

17-08-

2006

11-08-

2009

To Rejoin

AMU

Teaching and

Research

5 AMU,

Aligarh.

Associate

Professor

12-08-

2009

28-01-

2015 Promotion

Teaching and

Research

6 AMU,

Aligarh. Professor

29-01-

2015 Till date

Teaching and

Research

11. Administrative Experience:

Deputy Coordinator of DSA Program

Assistant Superintendent of Exam. (ZHCOET)

Departmental Coordinator: NAAC

Coordinator: M.Tech (admission)

Departmental Coordinator: Training and placement

Departmental Coordinator: BSR Scholarship

Tabulator of U.G. Courses.

In-charge of IC Design Lab.

In-charge of Electronics Workshop

Member of Recruitment committee(TU)

Member of Accreditation Committee(TU)

12. Professional Activities:

Editorial Board Member, International Journal of Education

Advisory Board Member (Membership No: 22FCB4AC11) Journal of Electronic

and Electrical Engineering; ISSN : 0976-8106 & E-ISSN : 0976-8114

Reviewer in Elsevier Journal of Materials Science in Semiconductor Processing

Reviewer in many national and international conferences

As Resource Person/Organizing committee member in many national and

international conferences/workshops

Member of International Association of Engineers (IAENG)

Member of IETE

Coordinator, TEQIP-III, ZHCET, AMU Aligarh