CURRICULAM VITAE
1. Name : Dr. MOHAMMAD JAWAID SIDDIQUI
2. Phone No. : +919634736626 (mobile)
3. Address: Dr. Mohammad Jawaid Siddiqui Professor, Electronics Engineering Department College of Engineering Aligarh Muslim University, Aligarh INDIA-202002
Email : [email protected];
[email protected]; [email protected]
4. Field of Specialization : Semiconductor Device Modeling
5. Academic Qualifications :
S.
No.
Degree Board/
University/
Institution
Division % Marks Year Specialization
1. High
School
U.P. Board I 77 % 1982 Physics, Chem, and
Math.
2. P.U.C. AMU, Aligarh I 74.9 % 1983 Physics,Chem.,and
Math.
3. B.Sc.Engg. AMU, Aligarh I 85.3 % 1988 Electrical Engg.
(low current)
4. M.Sc.Engg. AMU, Aligarh I 75.5 % 1993 Electronics Engg.
5 Ph.D. IIT,Kanpur - CPI=8.5 2002 Semiconductor
Device Modeling
6. Scholarships :
Merit scholarship during B Sc. Engg. From 1984- to 1988.
Qualified the GATE wit 89.2 percentile for P.G. Scholarship.
Quality Improvement Program Scholarship from 1998 to 2001 for
Ph.D. at Indian Institute of Technology ,Kanpur.
7. Awards:
Best Paper Presentation Award for the paper presented at National
Systems Conference (NSC-2000), Bangalore, Dec. 2000.
Best Teacher of Year 2009 award from Electrical Engineering Department, Taibah
University(TU), Saudi Arabia.
2nd Best Paper Award (IMPACT 2013) AMU, Aligarh
7. Ph.D., M.Tech. Dissertations and B.Tech. Projects Guided:
Number of Ph.D. Supervised = 3
Aisha Malik, “Study of Doped Titanium Dioxide Based Solar Cells”
Saifur Rahman, “An approach & Evaluation of Intelligent Sensors and their
application”
Hasin Alam, “Development of a Sensor System & its application”
Number of Ongoing Ph.D. = 4
Gulrez Anjum, “Modelling and Simulation of Semiconducting Multilayer
Nano- Structures”
Man Mohan Singh, “Modelling and Simulation of Resonant Tunneling Diode”
Abo Bakar Khan, “Modelling and Simulation of High Electron Mobility
Transistors”
Saima Beg, “ Computational modeling and Simulation of III-V SC Based
Lasing Nano-Hetrostructures”
Number of M.Tech. Projects and dissertations Guided = 40
Number of B.Tech. Projects Guided = 40
8. PROJECTS (Completed and Ongoing)
SAR 30000/- on Modeling of Kink Effect in Qassim University, Saudi Arabia-
2006
SAR 25000/- on SST in Taibah University Saudi Arabia-2008
Contributor in DRS-II Project from UGC , Rs. 64 Lakhs, 2009-2014
Rupees 1.85 Crore DSA approved by UGC to be operational since April 2015
(Deputy Coordinator of DSA Program)
9. Research and Publications :
(a) Book Chapters:
1. Nazir A. Sheikh, Yasir M. Shariff, Samir M. Shariff and M. Jawaid Siddiqui,
“Superfluous Curriculum Burdens on Mechanical Engineering Students, Causes and
Remedies”, Innovative Techniques in Instruction Technology, E-learning, E-
assessment, and Education published by SprigerLink 2008, 375-380, DOI: 10.1007/978-
1-4020-8739-4_65.
2. Samir M. Shariff, M. Jawaid Siddiqui, Nazir A. Sheikh and Yasir M. Shariff, “Response
of First Active Teaching / Learning Course at Taibah University” , Innovative
Techniques in Instruction Technology, E-learning, E-assessment, and Education
published by SprigerLink 2008, 366-369, DOI: 10.1007/978-1-4020-8739-4_63
(b) Research Papers Published in Refereed Journals:
1. M. J. Siddiqui and S. Qureshi, “An Empirical model for leakage current in Poly-Si
TFTs”, Solid State Electronics, Vol.-44, No.11, 2000, pp: 2015-2019.
2. M. J. Siddiqui and S. Qureshi, “Surface Potential Based Charge Sheet Model Poly-Si
TFTs Without Considering Kink Effect”, Microelectronics Journal, Vol.-32, No.33,
2001, pp: 235-240.
3. S. Qureshi and M. J. Siddiqui, “A DC Charge Sheet Turn-on Model for I-V
Characteristics of Doped Poly-Si TFTs”, Semicond. Sci. and Tech., Vol. 17, No.6,
2002, Pp: 526-533.
4. P. A. Alvi, K. M. Lal, M. J. Siddiqui, and S. Alim H. Naqvi ,”Carbon nanotubes field
effect transistors (CNTFETs)”: A review, Indian Journal of Pure & Applied Physics,
Vol. 43, Dec. 2005, 899-904
5. M. J. Siddiqui, S. Qureshi, S. M. ALShariff, “A Simple Semi-Analytical Model for the
Intrinsic n-Channel Poly-Silicon Thin Film Transistors”, Electron Technology Internet
Journal, Vol-39, 2007, pp1-4.
6. P. A. Alvi, Sapna Gupta, M. J. Siddiqui, G. Sharma, and S. Dalela, “Modeling and
Simulation of GaN/Al0.3Ga0.7N New Multilayer Nano-Heterostructure” Phsica B 405
(2010) 2431-2435
7. P. A. Alvi, Sapna Gupta, Pooja V. , G. Sharma, and M. J. Siddiqui, “Effects of Al
concentration on GaN/AlxGa1-xN new modeled multilayer nano-heterostructure”
Phsica B 405 (2010) 3624-3629.
8. Mohammad Kaifi, M.J.Siddiqui, T.A.Abbasi and M. U. Khan, “Simulation of SOI
MOSFET using ATLAS”, Journal of Electronic & Electrical Engineering, Vol. 1 , Issue
2, 2010, pp: 09-12.
9. Khalid, J.K.Singh, M.J.Siddiqui, S.A. Rahman, “IMPLEMENTATION OF
THRESHOLD LOGIC GATEs USING RTDs” , Journal of Electronic & Electrical
Engineering, Vol. 1 , Issue 2, 2010, pp: 13-17.
10. P A Alvi, Pyare Lal, S Dalela and M J Siddiqui, “An extensive study on simple and
GRIN SCH- based In0.71Ga0.21Al0.08As/InP lasing heterostrucutres” ,Phys. Scr. 85
(2012) 035402 (9pp).
11. Sapna Gupta , F. Rahman b, M. J. Siddiqui c, P.A.Alvi,” Strain profile in nitride based
multilayer nano-heterostructures” Physica B 411 (2013) 40–47
12. Farhan Aziz and M. J. Siddiqui, “ Simulation and Optimization of δ-doped
AlInAs/InGaAs HEMT for High Frequency Applications” International Journal of
Emerging Technologies in Computational and Applied Sciences IJETCAS 13-107; ©
2013, pp 43-48
13. Uma Sharma and M J Siddiqui,” Performance Evaluation of Photovoltaic Cell using
MATLAB” Invertis Journal of Renewable Energy, Vol. 3 No. 1, 2013; pp:52-57
14. HASIN ALAM, S. HASAN SAEED & M. JAWAID SIDDIQUI, “DEVELOPMENTS
IN ELECTRONIC NOSE SYSTEMS”, International Journal of Electronics,
Communication & Instrumentation Engineering, Research and Development
(IJECIERD) ISSN 2249-684X, Vol. 3, Issue 4, Oct 2013, 105-112
15. Aisha Malik, S. Hameed, M. J. Siddiqui, M. M. Haque, andM.Muneer, “Influence of
Ce Doping on the Electrical and Optical Properties of TiO2 and Its Photocatalytic
Activity for the Degradation of Remazol Brilliant Blue R” International Journal of
Photoenergy Volume 2013, Article ID 768348, 9 pages;
http://dx.doi.org/10.1155/2013/768348
16. Aisha Malik, , S. Hameed, M. J. Siddiqui, M. M. Haque, K. Umar, A. Khan, and M.
Muneer, “Study of Electrical and Optical Properties of Synthesized Tungsten Doped
and Undoped Titanium Dioxide Nanoparticle: Improved Performance in Dye
Sensitized Solar Cells ” , Journal of Nanoengineering and Nanomanufacturing, Vol. 4,
pp. 1–7, 2014(www.aspbs.com/jnan)
17. Aisha Malik, , S. Hameed, M. J. Siddiqui, M. M. Haque, A. Khan, and M. Muneer,
“Effect of Doping on Electrical and Optical Properties of Zirconium Doped and
Undoped Titanium Dioxide Nanoparticle ” , Advanced Science, Engineering and
Medicine, Vol. 6, pp. 1–7, 2014 (www.aspbs.com/asem)
18. Aisha Malik, , S. Hameed, M. J. Siddiqui, M. M. Haque, K. Umar, A. Khan, and M.
Muneer, “Electrical and Optical Properties of Nickel- and Molybdenum-Doped
Titanium Dioxide Nanoparticle: Improved Performance in Dye-Sensitized Solar
Cells” , Journal of Materials Engineering and Performance , September 2014, Volume
23, Issue 9, pp 3184-3192
19. Meha Sharma, Rashmi Yadav, Pyare Lal, M. J. Siddiqui, S. Dalela, and P. A. Alvi,
“Lasing Characteristics of InGaP/GaAs Nanoscale Heterostructures” , Advanced
Science, Engineering and Medicine Vol. 6, 1–7, 2014 (www.aspbs.com/asem)
20. Manav Jain and Mohammad Jawaid Siddiqui, “Electronic Fire Alarm”, Advance in
Electronic and Electric Engineering. ISSN 2231-1297, Volume 4, Number 2 (2014),
pp. 135-140
21. Swati Jha, Meha Sharma, Pyare Lal, Rashmi Yadav, M. J. Siddiqui, and P. A. Alvi,
“Gain Simulation of InGaP/GaAs Heterostructure” International Journal Of
Engineering Research and Technology (IJERT) AMRP-2013 Conf. Proc.
22. H. K. Nirmal , Nisha Yadav , S. Dalela, Amit Rathi , M. J. Siddiqui , P. A. Alvi,”
Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60
nano-heterostructure under high pressure ” , Physica E 80 (2016) 36–42.
23. A. K. Singh, Md. Riyaj, S. G. Anjum, Nisha Yadav, Amit Rathi, M. J. Siddiqui and P.
A. Alvi. “Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6
nano-scale heterostructure under external uniaxial strain”, Superlattices and
Microstructures (Elsevier) 98 (2016) 406-415.
24. H. K. Nirmal, S. G. Anjum, P. Lal, A. Rathi, S. Dalela, M. J. Siddiqui, P. A. Alvi, “Field
effective band alignment and optical gain in type-I
Al0.45Ga0.55As/GaAs0.84P0.16nano-heterostructures,” Optik (Stuttg)., vol. 127, no.
18, pp. 7274–7282, 2016.
25. Nisha Yadav, Garima Bhardwaj, S. G. Anjum, S. Dalela, M. J. Siddiqui, And P. A.
Alvi, “Investigation of high optical gain in complex type-II InGaAs/InAs/GaAsSb
nano-scale heterostructure for MIR applications”, Applied Optics, Vol. 56, No. 15 ,
(2017), pp. 4243-4249.
26. Garima Bhardwaj, Nisha Yadav, S. G. Anjum, M. J. Siddiqui, And P. A. Alvi, “Uniaxial
strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale
heterostructure”, Optik - International Journal for Light and Electron Optics (Elsevier),
Vol. 146, (2017), pp. 8-16.
27. A. K. Singh et al., “Anisotropy and optical gain improvement in type-II
In0.3Ga0.7As/GaAs0.4Sb0.6nano-scale heterostructure under external uniaxial strain,”
Superlattices Microstruct., vol. 98, pp. 406–415, 2016.
28. S. G. Anjum, Sandhya K., A. B. Khan, A. M. Khan, M. J. Siddiqui, P. A. Alvi, “Effects
of variation of quantum well numbers on gain characteristics of type-I InGaAsP/InP
nano-heterostructure”, Bulletin of Electrical Engineering and Informatics, ISSN: 2089-
3191, Vol. 6, No. 3, (2017), pp. 301-310.
29. A. B. Khan, S. G. Anjum, and M. J. Siddiqui, “Simulation Study of Various Layers and
Double δ -Doping Effect on Device Performance of InAlAs/ InGaAs/InP HEMT,” J. of
New Tec. and Materials, vol. 07, pp. 76–82, 2017.
30. A. B. Khan, M. Sharma, M. J. Siddiqui, and S. G. Anjum, “Examine and Interpreting
the RF and DC Characteristics of AlGaN/GaN HEMT and MOS-HEMT,” Adv. Sci.
Eng. Med., vol. 9, no. 4, pp. 282–286, Apr. 2017.
31. A. B. Khan, M. Sharma, S. G. Anjum, and M. J. Siddiqui, “2D Simulation Study of DC
and RF Characteristics of Double Heterostructure AlGaN/GaN DG-HEMT Device for
High-Frequency Application,” Mater. Focus, vol. 6, no. 5, pp. 531–538, Oct. 2017.
32. A. B. Khan, M. Sharma, M. J. Siddiqui, and S. G. Anjum, “Performance Analysis of
AC and DC Characteristics of AlGaN/GaN HEMT at Various Temperatures,” Trans.
Electr. Electron. Mater., vol. 19, no. 2, pp. 90–95, Apr. 2018.
33. A. B. Khan, S. G. Anjum, and M. J. Siddiqui, “Effect of Barrier Layer Thickness on
AlGaN/GaN Double Gate MOS-HEMT Device Performance for High-Frequency
Application,” J. Nanoelectron. Optoelectron., vol. 13, no. 1, pp. 20–26, Jan. 2018.
34. S. Ahmad, M. A. Raushan, S. Kumar, S. Dalela, M. J. Siddiqui, and P. A. Alvi,
“Modeling and Simulation of GaN based QW LED for UV Emission,” Opt. - Int. J.
Light Electron Opt., vol. 158, pp. 1334–1341, 2018.
35. Mohd Adil Raushan, Naushad Alam, Mohd Waseem Akram, Mohd Jawaid Siddiqui,
“Impact of asymmetric dual-k spacers on tunnel field effect transistors”, Journal of
Computational Electronics (2018) vol. 17, no. 2, pp. 756-765. DOI: 10.1007/s10825-
018-1129-5.
36. Mohd Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui, “Performance
Enhancement of Junctionless Tunnel Field Effect Transistor Using Dual-k Spacers”,
Journal of Nanoelectronics and Optoelectronics, Vol. 13, pp. 1–9, 2018.
DOI:10.1166/jno.2018.2334.
37. Mohd Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui, “Dopingless Tunnel
Field-Effect Transistor with Oversized Back Gate: Proposal and Investigation”, IEEE
Transactions on Electron Devices, (2018) vol. 65, issue. 10, pp. 4701-4708. DOI:
10.1109/TED.2018.2861943
38. A. B. Khan, M. J. Siddiqui, “Impact of Back Barrier with Back Gate on Device
Performance of AlGaN/GaN DG-HEMT” J. Nanoelectron. Optoelectron .
39. Mohd Adil Raushan , Student Member, IEEE , Naushad Alam , and Mohammad Jawaid
Siddiqui,” Dopingless Tunnel Field-Effect Transistor With Oversized Back Gate:
Proposal and Investigation” IEEE TRANSACTIONS ON ELECTRON DEVICES,
VOL. 65, NO. 10, OCTOBER 2018, pp 4701-4708.
(c) Papers Presented/Published in International and National Conferences:
1. S. J. Arif, M. J. Siddiqui and W. Ahmad, “Simple Methods for Measurement and
Control of Power Frequency Deviations”, Proc. 14th National Systems Conference,
A.M.U., Aligarh, 12-14 March 1991, pp: 571-573.
2. M. S. Beg, M. Jawaid Siddiqui and R. Muzammil, “Computer Generation and
Verification of Raleigh Fading Channel for Mobile Radio Applications”, Proc. National
Symposium on Cellular Radio and Mobile Communication (CRAM-92), A.M.U.,
Aligarh, 28-29 May 1992, pp: 90-98.
3. M. S. Beg and M. J. Siddiqui, “Performance Assessment of Some Estimators for a
Mobile Radio Channel”, Proc. 9th National Convention of Electronics and
Telecommunication Engineers, University of Roorkee, 30-31 March, 1994, pp: 94-99.
4. M. J. Siddiqui, M. S. Umar and S. A. Rehman, “Modeling and Computer Simulation of
Multipath Fading Channel”, National Conference on Communication-2001, CSIO
Chandigarh, 1-2 Dec. 1995.
5. M. J. Siddiqui, “Performance Evaluation of Combined Estimator and Detector over a
Flat Fading Channel for Mobile Radio Application”, Proc. 19th National Systems
Conference (NSC-95), P.S.G. College of Technology, Coimbatore (TN), 14-16
December 1995, pp: 351-355.
6. M. J. Siddiqui, T. Ajmal, R. Rizvi and N. Sami, “Laser and Tissue Interaction”, Proc.
1st International Conference organized by Molecular Association, A.M.U. Aligarh, 18-
20 March 1996.
7. M. J. Siddiqui, Ekram Khan, A. Ehtisham, “Spread Spectrum in Mobile Radio
Application” Proc. National Conference on Communication Highways, MACT, R.E.C.
Bhopal, 11-13 Oct. 1996.
8. T. Ajmal and M. J. Siddiqui, “Optical Fiber Based Biomedical Sensor”, Proc. Of
National Symposium and Exposition on Modern Instrumentation, 27-28 February 1999,
pp: 15-18.
9. M. J. Siddiqui and S. Qureshi, “An Explicit Surface Potential Formulation for Doped
Poly-Si TFTs”, Proc. 19th National Systems Conference (NSC-2000), ISRO,
Bangalore, pp: 513- 519.
10. M. Jawaid Siddiqui, Samir M Al-Sharieff and A. F. Almarshoud, “A Simple Model for
the Kink Effect for the intrinsic p-channel Polysilicon thin film transistors” presented
in 18TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM-06)
King Fahd University of Petroleum and Minerals Dhahran, Saudi Arabia, 16-19,
December, 2006.
11. Nazir A. Sheikh, Yasir M. Shariff, Samir M. Shariff and M. Jawaid Siddiqui,
“Superfluous Curriculum Burdens on Mechanical Engineering Students, Causes and
Remedies”, presented in International Joint Conferences on Computer, Information,
and Systems Sciences, and Engineering (CIS2E 07) December 3 - 12, 2007 Technically
Co-Sponsored by: Institute of Electrical & Electronics Engineers (IEEE), University
of Bridgeport , USA.
12. Samir M. Shariff, M. Jawaid Siddiqui, Nazir A. Sheikh and Yasir M. Shariff, “Response
of First Active Teaching / Learning Course at Taibah University” , presented in
International Joint Conferences on Computer, Information, and Systems Sciences, and
Engineering (CIS2E 07) December 3 - 12, 2007 Technically Co-Sponsored by: Institute
of Electrical & Electronics Engineers (IEEE), University of Bridgeport , USA.
13. M. Jawaid Siddiqui, Samir M. Shariff, and M. U. Khan, “A Proposed Model for Kink
Effect in the SOI MOSFETS” Proceedings of Modern Trends in Electronics and
Communication Systems.(MTECS-2008) AMU Aligarh pp 13-17, 2008.
14. M. Jawaid Siddiqui and Samir M. Al-Sahriff , “A SIMPLE DIGITAL CIRCUIT FOR
ENHANCED DATA SECURITY TIME HOPPING SPREAD SPECTRUM
SYSTEM” Accepted for presentation in “The IAENG International Conference” on
Communication Systems and Applications (ICCSA'09) Hong Kong, 18-20 March,
2009.
15. Mohammad Kaifi, M.J.Siddiqui, T.A.Abbasi and M. U. Khan, ““Simulation of SOI
MOSFET using ATLAS”, ”, 3rd National Conference On Wireless Communication &
VLSI Design, NCWCVD-2010, 27-28 March-2010 Organised by Department of
Electronics & Comm. Engg. Gwalior Engineering College and Technically Supported
by IEEE MP Subsection.
16. Khalid, J.K.Singh, M.J.Siddiqui, S.A. Rahman, “IMPLEMENTATION OF
THRESHOLD LOGIC GATEs USING RTDs” , ”, 3rd National Conference On
Wireless Communication & VLSI Design, NCWCVD-2010, 27-28 March-2010
Organised by Department of Electronics & Comm. Engg. Gwalior Engineering College
and Technically Supported by IEEE MP Subsection.
17. Farhan Aziz, M. J. Siddiqui and M. U. Khan, “Impact of δ doping and spacer layer
thickness variation on high density 2DEG in High Electron Mobility Transistors”, 28-
30 March-2011 International Conference on Electronics, Information and
Communication Systems Engineering (ICEICE-2010), Organised by M. B. M. College
of Engineering and technology, Jodhpur (Rajasthan).
18. Pyare Lal, M. J. Siddiqui and P. A . Alvi, “Modeling and Simulation of AlGaAs/GaAs
SQW Laser for Optical Communication System” IEEE Sponsored International
Conference on Multimedia Signal Processing and Communication Technologies
(IMPACT-2011) from 17th to 19th Dec. 2011.
19. Aisha Malik, S. Hameed, M.J. Siddiqui, M.M. Haque and M. Muneer, “Study of
Photoconductivity of Nanocrystalline Titanium Dioxide used in Dye Sensitized Solar
Cell” IEEE Sponsored International Conference on Multimedia Signal Processing and
Communication Technologies (IMPACT-2011) from 17th to 19th Dec. 2011.
20. Mohammad Kaifi and M.J.Siddiqui, “ Kink Model for SOI MOSFET” , in IEEE
Sponsored International Conference on Multimedia Signal Processing and
Communication Technologies (IMPACT-2011) from 17th to 19th Dec. 2011.
21. M. Jawaid Siddiqui, M. Khalid, T. A. Abbasi and M. U. Khan, “Performance
Evaluation of Threshold Logic Gates Using RTDs ” 2nd November-2012, National
Conference on Electronics, Communication, and Sensing & Signal Processing
Technologies (ECSS 12) Organised by 'SURENDRA INSTITUTE OF
ENGINEERING & MANAGEMENT’ at Siliguri (West Bengal).
22. Vishal Paliwal, Dr. Mohammad Jawaid Siddiqui, Utkarsh, “Non-Enzymatic Approach
to Bio-sensing”, Proceeding of National Conference on “Advances & Research in
Electrical System Technology (AREST’13) February 15-16, 2013 at ARYA
INSTITUTE OF ENGINEERING & TECHNOLOGY, Jaipur.
23. Manav Jain, Mohammad Jawaid Siddiqui, “PENETRATION PHENOMENON OF
LIGHT THROUGH DAILY USE PRODUCTS- MILK AND OIL, presented in
Conference on Advances in Communication and Control Systems - 2013 (CAC2S
2013) at Dehradun (ISBN (on-line): 978-90-78677-66-6).
24. Mohd. Zihaib Khan, Mohd. Samar Ansari and Mohd Jawaid Siddiqui, “Digitally
Programmable Second-Order Current mode Continuous-time Filters” , IEEE
Sponsored Saudi International Conferenceon Electronics, Communications and
Photonics (SIECPC), 27-30 April 2013 2013 E-ISBN :978-1-4673-6194-1; Print
ISBN:978-1-4673-6196-5.
25. Aboo Bakar Khan, M. J. Siddiqui and Man Mohan Singh, “Theoretical Analysis of
Piezoelectric Cantilever Sensor” IEEE Sponsored International Conference on
Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 4-6
June 2013, ISBN: 978-1-4673-5150-8.
26. Man Mohan Singh, Dr. M. J. Siddiqui, Aboo Bakar Khan; “Comparative
Characterization of Human Blood along with Viscosity Measurement” IEEE
Sponsored International Conference on Microelectronics, Communications and
Renewable Energy (AICERA/ICMiCR), 4-6 June 2013, ISBN: 978-1-4673-5150-8.
27. Man Mohan Singh, Dr. M. J. Siddiqui, Aboo Bakar Khan and Mrs Thaseena CK,
“Simulation Study of I-V Characteristics of RTD with variation in Doping
Concentration” IEEE Sponsored International Conference on Multimedia Signal
Processing and Communication Technologies (IMPACT-2013) from 23rd to 25th Nov.
2013.
28. Aboo Bakar Khan, Dr. M. J. Siddiqui Man Mohan Singh, and Mrs Thaseena CK,
“Impact of Gate Length and Schottky Layer Variation on Device Performance of
Double δ-Doped InAlAs/InGaAs HEMT ” IEEE Sponsored International Conference
on Multimedia Signal Processing and Communication Technologies (IMPACT-2013)
from 23rd to 25th Nov. 2013.
29. A. R. khan, Dr. M. J. Siddiqui and Dr. S.S.K. Iyer, “Advanced Technique of Vertical
Organic Thin Film Transistor ” , ” IEEE Sponsored International Conference on
Multimedia Signal Processing and Communication Technologies (IMPACT-2013)
from 23rd to 25th Nov. 2013.
30. Saifur Rahman, S. Hasan Saeed, M. J. Siddiqui, Saima Rahman, “POLYMERIC
CHEMORESISTOR MODEL USE IN DESIGN AND SIMULATION OF SENSOR”,
IEEE Sponsored International Conference on Multimedia Signal Processing and
Communication Technologies (IMPACT-2013) from 23rd to 25th Nov. 2013.
31. Syed Gulraze Anjum, Mohammad Jawaid Siddiqui, “Multiple Quantum Well Based
Lasing Nanostructures: A Review”, IEEE Sponsored International Conference on
Multimedia Signal Processing and Communication Technologies (IMPACT-2013)
from 23rd to 25th Nov. 2013.
32. Meha Sharma, Pyare Lal, M. J. Siddiqui, P. A. Alvi, “Carrier Dependent Gain
Characteristics Of InGaP/GaAs Nano-heterostructure ” , IEEE Sponsored International
Conference on Multimedia Signal Processing and Communication Technologies
(IMPACT-2013) from 23rd to 25th Nov. 2013.
33. Pyare Lal, Rashmi Yadav, Meha Sharma, F. Rahman, M. J. siddiqui, and P. A. Alvi,
“Gain Investigation on Strained InGaAlAs/InP Lasing Nano-Heterostructure”, IEEE
Sponsored International Conference on Multimedia Signal Processing and
Communication Technologies (IMPACT-2013) from 23rd to 25th Nov. 2013.
34. Siddhant Mittal, Laxman Prasad Goswami, M J. Siddiqui, Aisha Malik1, “Dye
Sensitized Zr Doped TiO2 Based Solar Cells” , International Conference on
Nanoscience & Nanotechnology “Aligarh Nano IV International 2014”: Department of
Applied Physics, Aligarh Muslim University, Aligarh, India March 08-10, 2014.
35. H. K. Nirmal, M. J. Siddiqui, P. A. Alvi, “Optimization of Optical Gain in
GaAsP/AlGaAs Nano-Heterostructures” National Conference on “Advances in
materials and materials processing (ammp-15)” at National Institute of Technology
Srinagar, 22-23rd may, 2015.
36. M. M. Singh, M. J. Siddiqui, A. B. Khan, and S. G. Anjum, “Effect of barriers length
and doping concentration on GaAs/AlGaAs RTD,” in 2015 Annual IEEE India
Conference (INDICON), 2015, pp. 1–5.
37. S. G. Anjum, M. J. Siddiqui, A. B. Khan, M. M. Singh,” Investigation of material gain
of InGaAs/InGaAsP/InP lasing heterostructure”; IEEE sponsored International
Conference MicroCom-16 held at NIT Durgapur, 23-25 January, 2016.
38. Man Mohan Singh, Mohd. Jawaid Siddiqui and Anupriya Saxena, “Comparative
Simulation of GaAs and GaN based Double Barriers-Resonant tunneling Diode”,
published in Elsevier Science in the Open-access Procedia Computer Science series,
2016.
39. S. G. Anjum, Nisha Yadav, H. K. Nirmal, Meha Sharma, M. J. Siddiqui and P. A.
Alvi. “Investigation of optical response in type-II InAs/AlSb nano-scale
heterostructure: A novel dual structure”, International Conference on Processing of
Materials, Minerals and Energy (PMME), held at PITS, Ongole, AP, 29-30 July,
2016, accepted for publication in ELSEVIER: Materials Today Proceedings.
40. S. G. Anjum, Nisha Yadav, M. J. Siddiqui , P. A. Alvi, “Optical Characteristics of Type-
II InGaAs/GaAsSb QW Heterostructure under Electric Field”, OSA sponsored 13th
international conference on fibre optics and photonics, 04-08 December,
PHOTONICS-2016, held at IIT kanpur.
41. A. Bakar Khan, M. Jawaid Siddiqui, and S. Gulraze Anjum, “Simulation study of DC
characteristics of double quantum well AlGaN/GaN double gate HEMT structure,”
Proc. Int. Conf. Nanotechnology. Better Living, vol. 3, no. 1, pp. 117–117, 2016.
42. Aboo Bakar Khan, Dr. Mohammad Jawaid Siddiqui and Syed Gulraze Anjum,
“Simulation Study of Double Quantum Well AlGaN/GaN Single Gate and Double
Gate HEMT Structures”, International Conference on Nanotechnology & STEM-ER
at AMU, Aligarh during March 12-15, 2016.
43. Aboo Bakar Khan, Dr. Mohammad Jawaid Siddiqui, Man Mohan Singh and Syed
Gulraze Anjum, “Simulation Study of Single Doping and Double Doping InP Based
InGaAs/InAlAs HEMT”, IEEE International Conference on Emerging Trends in
Electrical, Electronics & Sustainable Energy Systems at KNIT Sultanpur, India,
during March 11-12, 2016.
44. A. Bakar Khan, M. J. Siddiqui, and S. G. Anjum, “Comparative Study of Single and
Double Quantum Well AlGaN/GaN HEMT Structures for High Power GHz
Frequency Application,” Mater. Today Proc., vol. 4, no. 9, pp. 10341–10345, Jan.
2017.
45. S. G. Anjum, A. B. Khan, M. J. Siddiqui, P. A. Alvi, “Analysis of optical gain
characteristics of type-I InGaAsN/GaAs (dilute N) based lasing nano-heterostructure”,
International conference on nanomaterials and nanotechnology, 01-03 March,
ICNANO-2017, held at Vinobha bhave research institute, Allahabad.
46. Parvez Ahmad Alvi, Nisha Yadav, Garima Bhardwaj, S. G. Anjum, M. J. Siddiqui,
Sandhya K, “Quantum Well Width Effect on Intraband Optical Absorption in Type-II
InAs/AlSb Nano-scale Heterostructure”, Springer sponsored International
Conference on Optical & Wireless Technlogies (OWT), 18th – 19th March, 2017 held
at NIT jaipur.
47. S. Ahmad, A. Raushan, M. J. Siddiqui, M. A. Raushan, and M. J. Siddiqui,
“Achievements and Perspectives of GaN based Light Emitting Diodes : A Critical
Review,” International Conference on Trends in Electronics and Informatics 2017,
2017.
48. S. Ahmad, A. Raushan, M. J. Siddiqui, M. A. Raushan, and M. J. Siddiqui, Imtiaz
Ashraf, “Achievements and Limitations of UV-LEDs: A Critical Review,”
International Conference on Electrical, Electronics, Computers, Communication,
Mechanical and Computing (EECCMC), 2018.
49. A. B. Khan, M. Sharma, S. G. Anjum, and M. J. Siddiqui, “Influence of back barrier
layer thickness on device performance of AlGaN / GaN MOS-HEMT,” Adv. Mater.
Proc., vol. 3, no. 7, pp. 480–484, 2018.
50. Mohd Adil Raushan, Naushad Alam, Shameem Ahmad, Mohd Jawaid Siddiqui, “-
Improved performance of Dual material gate Junctionless TFET using asymmetric
dual-k spacers”, IEEE International Conference on Electrical, Electronics, Computers,
Communication, Mechanical and Computing (EECCMC) 2018.
51. A. B. Khan, M. J. Siddiqui, “Performance Analysis of AlGaN/GaN MOS-HEMT
Device with Various Gate Oxide” 2nd International Conference on Nano Science &
Engineering Applications, Institute of Science and Technology, JNTU, Hyderabad,
October 2018.
8. Details of Employment:
S.
No. Institute Designation
Period Reasons for
leaving Nature of Duties
From To
1. AMU,
Aligarh. Lecturer 11-10-1988 18-03-1997 Promotion Teaching and
Research
2. AMU,
Aligarh. Reader 19-03-1997 31-10-2004
Foreign
Assignment
Teaching and
Research
3.
Qassim
University
(Saudi
Arabia)
Assistant
Professor 1-11-2004
16-08-
2006
To move Holy
City Madinah
Teaching and
Research
4
Taibah
University
(Saudi
Arabia)
Assistant
Professor
17-08-
2006
11-08-
2009
To Rejoin
AMU
Teaching and
Research
5 AMU,
Aligarh.
Associate
Professor
12-08-
2009
28-01-
2015 Promotion
Teaching and
Research
6 AMU,
Aligarh. Professor
29-01-
2015 Till date
Teaching and
Research
11. Administrative Experience:
Deputy Coordinator of DSA Program
Assistant Superintendent of Exam. (ZHCOET)
Departmental Coordinator: NAAC
Coordinator: M.Tech (admission)
Departmental Coordinator: Training and placement
Departmental Coordinator: BSR Scholarship
Tabulator of U.G. Courses.
In-charge of IC Design Lab.
In-charge of Electronics Workshop
Member of Recruitment committee(TU)
Member of Accreditation Committee(TU)
12. Professional Activities:
Editorial Board Member, International Journal of Education
Advisory Board Member (Membership No: 22FCB4AC11) Journal of Electronic
and Electrical Engineering; ISSN : 0976-8106 & E-ISSN : 0976-8114
Reviewer in Elsevier Journal of Materials Science in Semiconductor Processing
Reviewer in many national and international conferences
As Resource Person/Organizing committee member in many national and
international conferences/workshops
Member of International Association of Engineers (IAENG)
Member of IETE
Coordinator, TEQIP-III, ZHCET, AMU Aligarh