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Design and Performance Analysis of Low Power Digital

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    DESIGN AND PERFORMANCE ANALYSIS OF LOW

    POWER DIGITAL CIRCUITS USING GDI

    SUBMITTED BY:

    POOJA VERMA

    ROLL NO -1270679

    M.TECH- VLSI DESIGN

    CHANDIGARH GROUP OF COLLEGES,LANDRAN

    PUNJAB TECHNICAL UNIVERSITY

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    Outline

    Introduction

    Role of VLSI In digital circuits

    Gaps in present Study

    Objectives

    Methodology

    3

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    INTRODUCTION

    GATE DIFFUSION INPUT (GDI)

    It is a new technique of low power digital combinational circuit design.

    This technique allows reducing power consumption, propagation delay, area of digital circuits while

    maintaining low complexity design .

    GDI allows implementation of wide range of complex logic functions using only two transistors.

    Basic GDI cell:

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    Advantages of GDI OVER CMOS

    Low power circuit design

    Allows reducing power consumption.

    Reducing propagation delay.

    Reducing area of digital circuit.

    Maintaining low complexity of logic design.

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    WHY LOW POWER?

    Power dissipation limitations come in two ways:-

    1.The first is related to cooling considerations when implementing highperformance systems. High-speed circuits dissipate large amounts of energy in a

    short amount of time , generating a great deal of heat. This heat needs to be

    removed by the package on which integrated circuits are mounted.

    2.The second failure of high-power circuits relates to the increasing popularity of

    portable electronic devices. Laptop computers, portable video players and

    cellular phones all use batteries as a power source. To extend the battery life,

    low power operation is desirable in integrated circuits.

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    MODIFIED GATE DIFFUSION

    INPUT TECHNIQUE

    Mod-GDI CELL

    Modified GDI cell contains

    a low voltage terminal SP configured to be connected to high constant

    voltage (i.e. supply voltage)

    a high voltage terminal SN configured to be connected to a low constantvoltage(i.e. ground).

    Including terminals these ensures that the Mod-GDI cell can be implemented

    with all current CMOS technologies

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    FULL SWING GATE DIFFUSION

    INPUT LOGIC TECHNIQUE

    This technique is used to implement digital circuits by using GDI full swing

    F1 and F2 gates , which are counter parts of standard CMOS NAND and

    NOR gate.

    The Full Swing GDI technique utilizes a single swing restoration(SR)transistors to improve the output swing of F1 and F2 GDI gates.

    Full swing GDI cells are shown below:

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    Logic cell

    Switching

    Delay(ns)

    GDI

    Switching

    Delay(ns)

    Mod-GDI

    Switching

    Delay(ns)

    CMOS

    Transistor

    count for

    GDI cell

    Transistor

    count for

    Mod-GDI

    cell

    Transistor

    count for

    CMOS cell

    Power

    (w)

    GDI

    Power

    (w)

    Mod-GDI

    Power

    (w)

    CMOS

    OR .200 1.01 1.77 2 2 6 1.286 17.80 25.00

    AND .500 1.10 1.54 2 2 6 1.30 17.90 25.00

    F1 .280 1.59 2.17 2 2 6 1.35 25.00 48.23

    F2 .53 .40 1.70 2 2 6 1.39 25.00 42.27

    MUX .50 .50 1.69 2 2 12 1.45 25.00 54.64

    NAND .520 .242 .280 4 4 4 .657 .54 .64

    NOR .540 .280 .300 4 4 4 .680 .654 .75

    XOR .545 .362 .567 4 3 16 1.48 1.23 1.5

    XNOR .540 .363 .567 4 3 16 1.50 1.23 1.5

    Comparison of GDI techniques and

    CMOS from Literature survey

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    Role of VLSI in Digital Circuits

    Very large scale integration (VLSI) is the field which involves

    packing more and more logic devices into smaller and smaller

    areas.

    Power dissipation LOW POWER

    AREA- GDI instead of CMOS

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    GAPS IN THE PRESENT STUDY

    Less work has been carried out for sequential circuits design using GDI

    technique.

    There has been very less effort done to improve output voltage swings of digital

    circuits.

    Compatibility of GDI with twin-well CMOS process have not been studied.

    Advanced design metrics of GDI cells, such as minimum energy point (MEP)

    operation & minimum leakage vector (MLV) are less discussed.

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    OBJECTIVES

    1. To design an area efficient and low power digital circuit by using GDI

    technique.

    2. To design logic gates that that has less transistor count and consume less power.

    3. To design radix 4 booth multiplier using these gates .

    4. To achieve low power dissipation and less delay for high performance of system.

    5. To achieve reduction in sub threshold and gate leakage current of designed

    circuit.

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    METHODOLOGY

    1. Study of GDI techniques for the design of a low power digital circuit.

    2. Comparison between these techniques is done and best technique is selected

    which is MGDI.

    3. Logic gates are designed using MGDI technique.

    4. Radix 4 booth multiplier is designed using MGDI.

    4. Various parameters like area count, power dissipation and delay of gates and

    multiplier are calculated.

    5. Design and simulation of all the circuits have been performed by TANNER

    using TSMC BSIM .180m technologies.

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    Publication

    I have written a review paper on COMPARATIVE PERFORMANCE

    ANALYSIS OF VARIOUS LOW POWER GDI TECHNIQUES FOR DIGITAL

    CIRCUITS

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    REFERENCES

    [1] N. Weste and K. Eshraghian,Principles of CMOS digital design. Reading, MA: Addison-Wesley, pp. 304307.

    [2] J. P. Uyemura,Fundamentals of MOS Digital Integrated Circuits,Reading, Addison-Wesley, pp. 136-137.

    [3] Basic VLSI Design by Douglas A.Pucknell Kamran Eshraghian, 3rd edition, 2005 Prentice-Hall India.

    [4] Basic Low Power Digital Design; P.R. Panda et al., Power-efficient System Design, DOI 10.1007/978-1-4419-6388-8 2, Springer

    Science+Business Media, LLC 2010.[5] Kunal and Nidhi Kedia GDI:" A POWER EFFICIENT METHOD FOR DIGITAL CIRCUITS" ISSN Volume-1, Issue-3, 2012.

    [6] Arkadiy Morgenshtein, Viacheslav Yuzhaninov, Alexey Kovshilovsky, Alexander Fish," Full-Swing Gate Diffusion Input logic

    Case-study of low-power CLA adder design" INTEGRATION, the VLSI journal ,2013

    [7] Pankaj Verma , Ruchi Singh and Y. K. Mishra ,"Modified GDITechnique - A Power EfficientMethod For Digital Circuit Design"

    IJECSE,2012.

    [8] A. Morgenshtein, I. Shwartz, A. Fish, GateDiffusion Input (GDI) Logic in Standard CMOS Nanoscale Process,2010 IEEE 26th

    Convention of Electrical and Engineers in Israel.

    [9] Arkadiy Morgenshtein, Alexander Fish, and Israel A. Wagner," Gate-Diffusion Input (GDI): A Power-Efficient Method for Digital

    Combinatorial Circuits" ieee transactions on very large scale integration (vlsi) systems, vol. 10, no. 5, october 2002

    [10] Soolmaz Abbasalizadeh, Behjat Forouzandeh," Full Adder Design with GDI Cell and Independent Double Gate Transistor"

    IEEE,2012.

    [11] E.J. Priyanka, S. Vanitha, P.C.Rupa, "Design of GDI based 4-Bit Multiplier using Low Power Adder Cells"International Journal of

    Computer Applications (09758887) ,National conference on VSLI and Embedded systems 2013

    [12] Kannan, P.M.Prathyusha, K."Implementation of low power RAM in GDI technique with full swing" IEEE,2011.

    [13] Moradi. F.Wisland, Mahmoodi, H.,Aunet, S.,Tuan Vu Cao,"ULTRA LOW POWER FULL ADDER TOPOLOGIES" IEEE,2009.

    [14] Samiappa Sakthikumaran1, S. Salivahanan, V. S. Kanchana Bhaaskaran2, V. Kavinilavu," A Very Fast and Low Power Carry Select

    Adder Circuit" IEEE,2011

    [15] Nishad, A.K., Chandel, R." ANALYSIS OF LOW POWER HIGH PERFORMANCE XOR GATE USING GDI

    TECHNIQUE."IEEE 2011[16] Sakurai, T,"LOW POWER DIGITAL CIRCUIT DESIGN" Solid-State Circuits Conference, IEEE,2004

    [17] Samiappa Sakthikumaran1, S. Salivahanan, V. S. Kanchana Bhaaskaran2, V. Kavinilavu, B. Brindha and C. Vinoth," A Very Fast

    and Low Power Carry Select Adder Circuit"IEEE,2011

    [18] Hermentha.S,Dhawan, A."Multi-threshold CMOS design for low power digital circuits"IEEE,2008

    [19] Dan Wang, Maofeng Yang, Wu Cheng, Xuguang Guan, Zhangming Zhu, Yintang Yang, "Novel Low Power Full Adder Cells in

    180nmCMOS Technology" IEEE,2009.

    [20] Balasubramanian.P,John, J."Low power digital design using modified GDI method" Design and Test of Integrated Systems in Nano-

    scale Technology,2006

    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