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Design of a high speed low power Brent Kung Adder in 45nM CMOS

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Research presentation at the International Conference on Computer Science and Mechanical Engineering (IRAJ) in Pune in December 2013.
21
by: Nirav Desai. Work done as a student at University of Minnesota T An effort is made to reduce dynamic and static power dissipation of static CMOS in this project. Introduction: 16 bit arithmetic units are mainly found in microcontroller applications where speed is important from real-time constraints and low power methodologies dominate system design. Static CMOS which has been traditionally used for digital logic design has become unattractive at advanced technology nodes due to high static and dynamic power dissipation. 1 Design techniques using static CMOS such as Logical Effort have been developed that give the best delay for a logic chain.
Transcript
Page 1: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Prepared by: Nirav Desai. Work done as a student at University of Minnesota Twin Cities

• An effort is made to reduce dynamic and static power dissipation of static CMOS in this project.

Introduction:

• 16 bit arithmetic units are mainly found in microcontroller applications where speed isimportant from real-time constraints and low power methodologies dominate system design.

• Static CMOS which has been traditionally used for digital logic design has becomeunattractive at advanced technology nodes due to high static and dynamic power dissipation.1

• Design techniques using static CMOS such as Logical Effort have been developed thatgive the best delay for a logic chain.

Page 2: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Transistor Level Design

Inverter Design Optimization

• NMOS Width = 90nm• PMOS / NMOS Length = 50nM• Vdd = 1.1V• Current Averaged Over One Period of 2 ns• Optimal PMOS Width = 165nM• βinverter = 165/90 = 1.834• Sizing for NAND, NOR and XOR Changed appropriately120 140 160 180 200 220 240 260 280 300

40

50

60

70

80

90

100

110

PMOS Width (nM)

TD*I

avg

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

VDD

Vin Vout

CL

Page 3: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Design Equations for Brent Kung AdderGi = Ai AND Bi … (1)Pi = Ai XOR Bi … (2)Gi

1=Gi + Pi AND Gi-1 … (3)Pi

1=Pi AND Pi-1 … (4)

Brent Kung Adder Gate Level Diagram

1. Input Block with Pre Computation

Input Adder Chain 1

Input Adder Chain 2

Input Adder Chain 3

Input Adder Chain 4

1X

1X

1X

1X

1.224X

1.562X

1.23X

1.274X

1.097X

1.553X

1.108X

1.034X

3.883X

3.043X

2.943X

10.1683X

10.8506X

36X

40X

Output Buffers to driveCapacitive Loads

Output Buffers to driveCapacitive Loads

Pi*Pi-1

Gi + Pi*Gi-1

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 4: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Gate Level Diagram

2. Intermediate Dot Product Blocks

Intermediate Adder Chain 1

Intermediate Adder Chain 21X

1X

1X

1X

1.72X

6X

4X

16X

16X

Output Buffers to driveCapacitive Loads

Pi*Pi-1

Gi + Pi*Gi-1

Design Equations for Brent Kung AdderGi = Ai AND Bi … (1)Pi = Ai XOR Bi … (2)Gi

1=Gi + Pi AND Gi-1 … (3)Pi

1=Pi AND Pi-1 … (4)

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 5: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Gate Level Diagram

3. Output Block for Post Computation

1.182X1.117X

Ci-1

Pi

Output Buffers to driveCapacitive Loads

Si

Design Equations for Brent Kung AdderGi = Ai AND Bi … (1)Pi = Ai XOR Bi … (2)Gi

1=Gi + Pi AND Gi-1 … (3)Pi

1=Pi AND Pi-1 … (4)

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 6: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 7: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Brent Kung Adder Transistor Level Design

1. Input Block with Pre Computation

Input Adder Block Chain 1

Gate Number 1.000 2.000 3.000 4.000 5.000Stage G Stage F Stage B Stage H Gate H

Gate Name BUFFER INVERTER NOR INVERTER NAND LOAD hg value 1.000 1.000 1.646 1.000 1.352 36.000 2.225 36.000 6.943 556.248 3.540f value 3.540 3.540 2.151 3.540 2.618648b value 2.893 2.400 1.000 1.000 1.000 1.000S Value 1.000 1.224 1.097 3.883 10.16831 36.000

Input Adder Block Chain 2

Gate Number 1.000 2.000 3.000 4.000Stage G Stage F Stage B Stage H Gate H

Gate Name BUFFER INVERTER XOR NAND LOAD hg value 1.000 1.000 1.893 1.295 13.748 2.451 13.748 12.359 416.510 4.518f value 4.518 4.518 2.386 3.488b value 2.893 2.400 1.780 1.000 1.000S Value 1.000 1.562 1.553 3.043 13.748

Input Adder Block Chain 3

Gate Number 1.000 2.000 3.000Stage G Stage F Stage B Stage H Gate H

Gate Name BUFFER INVERTER NOR LOAD hg value 1.000 1.000 1.646 3.941 1.646 3.941 6.943 45.038 3.558f value 3.558 3.558 2.162b value 2.893 2.400 1.000S Value 1.000 1.230 1.108 3.941

Input Adder Block Chain 4

Gate Number 1.000 2.000 3.000 4.000 5.000Stage G Stage F Stage B Stage H Gate H

Gate Name BUFFER INVERTER XOR NAND INVERTER LOAD hg value 1.000 1.000 1.893 1.295 1.000 40.000 2.451 40.000 6.943 680.832 3.686f value 3.686 3.686 1.947 2.847 3.686447b value 2.893 2.400 1.000 1.000 1.000 1.000S Value 1.000 1.274 1.034 2.943 10.85056 40.000

3.94084

Logical Effort Design for Signal Chains

labeled in previous slide #2

Gi = logical effortFi = fan outSi = sizingBi = Branching in

Page 8: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Brent Kung Adder Transistor Level Design

2. Intermediate Dot Product Blocks

Intermediate Adder Block Chain 1

Gate Number 1.000 2.000 Stage G Stage F Stage B Stage H Gate HGate Name INVERTER NAND LOAD hg value 1.000 1.352 1.000 1.352 6.000 1.000 8.112 2.848f value 2.848 2.107 2.848b value 1.000 1.000 1.000S Value 1.000 2.107 6.000

Intermediate Adder Block Chain 2

Gate Number 1.000 2.000 Stage G Stage F Stage B Stage H Gate HGate Name BUFFER NAND LOAD hg value 1.000 1.352 2.848 1.352 2.848 2.000 7.701 2.775f value 2.775 2.053b value 2.000 1.000S Value 1.000 1.026

Logical Effort Design for Signal Chains

labeled in previous slide #2

Gi = logical effortFi = fan outSi = sizingBi = Branching in

Page 9: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Transistor Level Design

XOR GATE

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 10: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Brent Kung Adder Layout

Input Block with Pre Computation

Input Inverters for Bit 0 and Bit 1

Output BuffersPEX waveforms show

larger size may be needed

XORNAND10X

Page 11: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Brent Kung Adder Layout

XOR 1.553X

Page 12: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Brent Kung Adder Layout

Intermediate Dot Product Generator

Output BuffersPEX Waveforms

show largerSize may be necessary

here

Page 13: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Layout

Output Stage with Buffers

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 14: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Brent Kung Adder Layout

Full Layout: 49.5um X 48.6um

Page 15: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Worst Case Delay

Input Pattern: A: FFFF B: 0000 -> 0001

Dotted Lines show Carry Bits 15 and 14

Carry Bit 15 Carry Bit 14Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 16: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Output waveforms after parasitic extraction from layout: Sum Bit 0

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 17: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Output waveforms after parasitic extraction from layout: Sum Bit 14

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 18: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Brent Kung Adder Simulated Performance

Voltage (V) Delay Max-C14 (nS)

Power Max (mW)

Power-Delay

Product (xE-12)

1.1 0.359 6.73 2.41

0.9 0.503 2.95 1.483

0.7 0.937 0.924 0.865

Simulations with maximally sized 1 stage buffers as determined by Logical Effort Designof individual chains

Voltage (V) Delay Max-C14 (nS)

Power Max (mW)

Power-Delay

Product (xE-12)

1.1 0.403 5.186 2.089

0.9 0.569 2.277 1.295

0.7 1.069 0.692 0.739

Simulations with minimally sized 1 stage buffers

Without Parasitic Extraction and Interconnect Parasitics buffering doesn’t improve performance significantly.

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 19: Design of a high speed low power Brent Kung Adder in 45nM CMOS

Sr. No. Group Name Adder Type Technology Adder Delay

Power Consumption Power Delay Product Column1

1[1] University of Waterloo Department of ECE

16 bit Kogge Stone FPGA 45nM 419ps 13.29mW 5.57E-12

2 This work16 bit Brent Kung Adder

NCSU 45nM Free PDK ASIC 359ps 6.73mW 2.41E-12

3[4] University of Texas, Tyler Department of EE

16 bit Kogge Stone Spartan 3e 90nM 6.286ns -- --

4 [2] VIT University, Vellore16 bit Kogge Stone SPARTAN 3e 90nM 599ns 46.16uW 2.76E-11

5 [2] VIT University, Vellore16 bit Brent Kung Adder Spartan 3e 90nM 762ns 32.465uW 2.47E-11

8[5] University of Wisconsin, Madison

16 bit Ripple Carry Adder LSI Logic 110nM ASIC 2.59ns -- --

9[5] University of Wisconsin, Madison

16 bit Carry Lookahead Adder LSI Logic 110nM ASIC 1.09ns -- --

6[3] Concordia University Department of ECS

16 bit Brent Kung Adder Virtex 2 130nM 26.94ns 1.15W 3.10E-08

7[3] Concordia University Department of ECS

16 bit Kogge Stone Virtex 2 130nM 25.59ns 1.5546W 3.97E-08

Comparison with other similar works:

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 20: Design of a high speed low power Brent Kung Adder in 45nM CMOS

References: Comparison with other similar works:

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]

Page 21: Design of a high speed low power Brent Kung Adder in 45nM CMOS

References: 1. K. Nose and T. Sakurai, “Optimization of VDD and VTH for low power high speed applications,” in ACM/IEEE Design Automation Conference (DAC) Digest of Technical Papers, 2000, pp. 469-474From: Sub-threshold Design for Ultra Low-Power SystemsAlice Wang, Benton Highsmith Calhoun, Anantha P. Chandrakasan

2. Logical Effort by Ivan Sutherland, Bob Sproull and David Harris (Book)

3. Digital Integrated Circuits by Jan Rabaey, Anantha Chandrakasan, Borivoje Nikolic (Book)

4. A high-density sub-threshold SRAM with data-independent bit line leakage and virtual-ground replica schemeTae-Hyoung Kim, Jason Liu, John Keane, Chris Kim, University of MinnesotaISSCC 2007

5. The Design of CMOS Radio-Frequency Integrated Circuits by Thomas Lee (Book)

Work done as a student at the University of Minnesota, Twin Cities by Nirav Desai [email protected]


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