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Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue 1 , Richard Chang 2 , Frank O’Mahony 3 Center for Integrated Systems, Stanford University, Stanford CA 1 Carnegie Mellon University, PA 2 Atheros Communications, CA 3 Intel Corporation, OR Abstract The detrimental effects of interconnect inductance on signal propagation have been widely discussed. This papers describes innovative design concepts that utilize the interconnect inductance to benefit the design of high-speed circuits. Specific examples are illustrated. I. Introduction As the operational frequency of an integrated circuit increases beyond GHz, the inductive impedance associate with an on-chip wire becomes comparable or dominant over the resistive component. This could result in additional signal distortion, propagation delay, and cross-talk noise [1, 2]. Hence, the general belief is that inductance, L, is detrimental to interconnect performance, and should be minimized. Although the extraction of L associated with a wire randomly placed in a chip is complicated by many factors [3]. L can be controlled if there is a dedicated current return path as in co-planar strip line, or micro-strip line. In such an environment, the wire L can actually provide a new design dimension. This paper describes specific examples of applying wire L in high-speed circuits. II. Near Speed-of-Light Propagation of Electrical Signal As a digital signal propagates down a long wire, the quality of the signal is degraded resulting in excessive delay or inter-symbol interference. To understand the reasons, the power spectral density of a 500 ps digital pulse is compared with the intrinsic frequency characteristics of a minimum-sized wire in Fig. 1. The digital signal is broadband in nature, while the wire characteristic changes dramatically over this frequency band. At lower frequencies, the wire behaves as a distributed R-C network. In this regime, signals travel very slowly by diffusion and undergo frequency dispersion. As the frequency increases, L begins to dominate over R, and the wire behaves more as a L-C waveguide. The high-frequency L-C regime allows for propagation of an electromagnetic wave; consequently, the peak velocity is the speed-of-light in the dielectric surrounding the wire. ox Amplitude Velocity Figure 1 – Spectral power density of a typical digital pulse, and the signal propagation velocity versus frequency along a minimum-sized wire. Fig. 1 suggests that a high-speed system can be built by taking advantage of the wave nature of wire [4]. Firstly, it is necessary to eliminate the low-frequency portion of the signal that lags behind. This can be achieved by modulating the digital data with a sufficiently high-frequency carrier, and as a result, concentrating all the signal power in the L-C regime. Secondly, the crossover frequency between the R-C and L-C regimes can be shifted into the single GHz range by explicitly emphasizing L and reducing R. In this frequency range, simple RF circuits can be designed to transmit and receive these modulated signals. Fig. 2 illustrates the impact of using modulated signaling in combination with an optimized low-loss wire to support high-speed transmission. The signal spectral components now lie predominantly in the high-speed L-C regime. This system has been demonstrated in a TSMC 0.18-μm CMOS technology with six levels of Al/Cu wiring and SiO 2 dielectric. The transmitter, receiver, and all other components are integrated on-chip. Fig. 3 shows as-measured input and output waveforms propagating over a distance of 2 cm. Excluding the delay needed for driving signals on and off the chip for testing and measurement., an average delay of 283ps is obtained, which corresponds to an effective signal propagation speed of nearly one-half the speed of light in SiO 2 .
Transcript
Page 1: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Design with On-Chip Interconnect Inductance (Invited)

S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3

Center for Integrated Systems, Stanford University, Stanford CA 1Carnegie Mellon University, PA 2Atheros Communications, CA 3Intel Corporation, OR

Abstract The detrimental effects of interconnect inductance on signal propagation have been widely discussed. This papers describes innovative design concepts that utilize the interconnect inductance to benefit the design of high-speed circuits. Specific examples are illustrated. I. Introduction As the operational frequency of an integrated circuit increases beyond GHz, the inductive impedance associate with an on-chip wire becomes comparable or dominant over the resistive component. This could result in additional signal distortion, propagation delay, and cross-talk noise [1, 2]. Hence, the general belief is that inductance, L, is detrimental to interconnect performance, and should be minimized. Although the extraction of L associated with a wire randomly placed in a chip is complicated by many factors [3]. L can be controlled if there is a dedicated current return path as in co-planar strip line, or micro-strip line. In such an environment, the wire L can actually provide a new design dimension. This paper describes specific examples of applying wire L in high-speed circuits. II. Near Speed-of-Light Propagation of Electrical Signal As a digital signal propagates down a long wire, the quality of the signal is degraded resulting in excessive delay or inter-symbol interference. To understand the reasons, the power spectral density of a 500 ps digital pulse is compared with the intrinsic frequency characteristics of a minimum-sized wire in Fig. 1. The digital signal is broadband in nature, while the wire characteristic changes dramatically over this frequency band. At lower frequencies, the wire behaves as a distributed R-C network. In this regime, signals travel very slowly by diffusion and undergo frequency dispersion. As the frequency increases, L begins to dominate over R, and the wire behaves more as a L-C waveguide. The high-frequency L-C regime allows for propagation of an electromagnetic wave; consequently,

the peak velocity is the speed-of-light in the dielectric surrounding the wire.

ox

Amplitude

Velocity

Figure 1 – Spectral power density of a typical digital pulse, and the signal propagation velocity versus frequency along a minimum-sized wire. Fig. 1 suggests that a high-speed system can be built by taking advantage of the wave nature of wire [4]. Firstly, it is necessary to eliminate the low-frequency portion of the signal that lags behind. This can be achieved by modulating the digital data with a sufficiently high-frequency carrier, and as a result, concentrating all the signal power in the L-C regime. Secondly, the crossover frequency between the R-C and L-C regimes can be shifted into the single GHz range by explicitly emphasizing L and reducing R. In this frequency range, simple RF circuits can be designed to transmit and receive these modulated signals. Fig. 2 illustrates the impact of using modulated signaling in combination with an optimized low-loss wire to support high-speed transmission. The signal spectral components now lie predominantly in the high-speed L-C regime. This system has been demonstrated in a TSMC 0.18-µm CMOS technology with six levels of Al/Cu wiring and SiO2 dielectric. The transmitter, receiver, and all other components are integrated on-chip. Fig. 3 shows as-measured input and output waveforms propagating over a distance of 2 cm. Excluding the delay needed for driving signals on and off the chip for testing and measurement., an average delay of 283ps is obtained, which corresponds to an effective signal propagation speed of nearly one-half the speed of light in SiO2.

Page 2: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Single SWO

Virtual grounds

Prototyped clock gridSimulated clock grid

Cross-coupled pair

Clock buffer

Injection-locked cross-coupled pair

14µm

4µm 3.5µm

1.8mm0.6mm

Clkinj

ox

Velocity

Amplitude

Figure 2 – Spectral power density of a modulated digital pulse, and the signal propagation characteristic of an optimized low-loss wire.

Figure 3 – Measured input and output waveforms of the modulated signal transmission system. III. 10 GHz Standing Wave Clock Global clock distribution has become increasingly difficult for multi-GHz microprocessors. Timing uncertainty must reduce with clock period, but skew and jitter for conventional H-trees are proportional to latency, which does not scale with clock period [5]. The global clock network in Fig. 4 distributes a 10 GHz clock through a grid of coupled standing-wave oscillators (SWOs) [6]. The SWO, as shown in Fig. 5, is analogous to a differential L-C oscillator where the gain and tank are distributed. These SWOs are coupled together and sustain synchronous, sinusoidal standing waves across the chip. A single clock source coupled into one SWO injection-locks the entire grid. Clock buffers recover a digital clock and drive the local circuits. This coupled SWO clock network has been prototyped in a TSMC 0.18-µm CMOS technology. The test chip integrates eight coupled SWOs. The grid injection locks to an external clock from 9.8 GHz to 10.5 GHz (6.4% locking range). The clock skew and jitter are measured to be less than 1ps.

Figure 4 – 10GHz global clock network with coupled standing wave oscillators.

Standing-waveoscillator (SWO)

Tank

λ/2

Gain

Output

Reference Signal(Input)

Figure 5 – Schematic of a standing wave oscillator. 5. Conclusions In high frequency operations, wire inductance is not necessary undesirable, but can be exploited for novel design concepts. Other design examples that exploit the distributive behavior of a wire at high frequencies include a 23 GHz distributed amplifier and a 16 GHz distributed oscillator [7]. Acknowledgments The work presented in this paper was partially supported by the MARCO Interconnect Focus Center. References [1] Restle, et al, IEEE JSSC, Apr 1998. [2] Deutsch, et al., Proc. IEEE, Apr 2001. [3] Kim, PhD thesis, Stanford University, 2004. [4] Chang, et al, Sym VLSI Circuits, June 2002. [5] Restle, et al, IEEE JSSC, May 2001. [6] O’Mahony, et al, ISSCC, 2003. [7] Kleveland, et al, IEEE JSSC, Oct 2001.

Page 3: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Design withOn-Chip Interconnect Inductance

S. Simon Wong, C. Patrick Yue1,Richard Chang2, Frank O’Mahony3

Electrical Engineering Department, Stanford University1 Intel Corp., 2 Carnegie-Mellon University, 3 Atheros Communication

Outline

• Detrimental Effects of Interconnect Inductance

• Taking Advantage of Inductance• Conclusions

Motivation

2t2LCtLG)(RCRG2x

2 VVVV

w s

l

H

w = 2 m, s = 2 m, l = 1 mm

Low Frequency

High Frequency

Crossover Frequency

Line Impedance vs Frequency

Commercial Design

30 , 0.2rt psUser Input

( ) ( ) 6d dt RLC t RC psScreeningCriteria

ScreeningOutput

98 nets

Inductance Screening Example

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

1.0E+07

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

Length (mm)

Num

ber o

f Net

s

All the Netstr = 20pstr = 30pstr = 40ps

= 0.2

Inductance Screening Result

Page 4: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Outline

• Detrimental Effects of Interconnect Inductance

• Taking Advantage of Inductance– Near Speed of Light Propagation of Electrical

Signal

• Conclusions

Inductance is a property of a closed current loop

1

11 1 1

S

B ds

1111

1

LI

I1 S1

c1

I2 S2

c2

1212

1

MI

2

12 1 2

S

B ds

Signal

Return

S

On-chip environment

?

Inductance Definition

Coplanar Configuration Microstrip Configuration

• Multiple Metal Levels• Shielding from Substrate/UnderlyingWires

• Resistance Scales with Width atHigh Frequencies

• Only Single Metal Level• Coupling to Substrate/Underlying Wires• Slow-wave Effects• Resistance is Independent ofWidth at High Frequencies

Coplanar versus Microstrip

1M 10M 100M 1G 10G0.85

0.9

0.95

1

Frequency [Hz]

Nor

mal

ized

Am

plitu

de

0.01

0.1

1

Nor

mal

ized

Vel

ocity

Velocity

Amplitude

Digital Signal over Global Wires

2t2LCtRC2x

2 VVV

R L C

Low Frequencies (R>> L).

R L C

High Frequencies (R<< L).

2t2LCtRC2x

2 VVV

Frequency analysis of digital pulse over interconnect.

1M 10M 100M 1G 10G−80

−60

−40

−20

0

20

Powe

r Spe

ctral

Dens

ityof

Trap

ezoid

al Pu

lse

1M 10M 100M 1G 10G0.85

0.9

0.95

1

Frequency [Hz]

Nor

mal

ized

Am

plitu

de

0.01

0.1

1

Nor

mal

ized

Vel

ocity

Velocity

Amplitude

Digital signals are broadband.• Most power of the digital

pulse is concentrated in slower, low-frequency regime.

Length of line = 1 mm

Digital Signal over Global Wires

Digital signals are broadband.• Most power of the digital

pulse is concentrated in slower, low-frequency regime.

• But, portion of signal that contributes to sharp rise time is in the higher frequency regime.

Frequency analysis of digital pulse over interconnect.

1M 10M 100M 1G 10G−80

−60

−40

−20

0

20

Powe

r Spe

ctral

Dens

ityof

Trap

ezoid

al Pu

lse

1M 10M 100M 1G 10G0.85

0.9

0.95

1

Frequency [Hz]

Nor

mal

ized

Am

plitu

de

0.01

0.1

1

Nor

mal

ized

Vel

ocity

Velocity

Amplitude

Length of line = 1 mm

Digital Signal over Global Wires

Page 5: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Modulate digital signals with a high-frequency carrier to

push signal spectrum into LC-regime.

Normal Digital Pulse. Modulated Digital Pulse.

Signaling in the LC Regime

INPUT:Digital Data

RF Carrier

Interconnect

SenseAmplifier

OUTPUT:Digital Data

RF Carrier

tdiel

tmetal

w

Cross-section:tmetal = 2 m

frequency = 10 GHzComposition: Al, SiO2

Need to minimize loss over interconnect, while using reasonable dimensions.

Contours of loss [dB/mm]

2 4 6 8

2

4

6

8

10

12

14

16

tdiel

(Dielectric Thickness) [µm]

w (

Sig

nal W

ire W

idth

) [µ

m] 0.20.3

0.3

0.4

0.4

0.5

0.5

0.6

0.6

0.7

0.70.80.9

1

Optimization of Low Loss Wires

1M 10M 100M 1G 10G 100G−30

−20

−10

0

Frequency [Hz]

Nor

mal

ized

Pow

er S

pect

rum

[dB

]

0.001

0.01

0.1

1

Nor

mal

ized

Vel

ocity

w.r

.t. c ox

1M 10M 100M 1G 10G 100G−30

−20

−10

0

Frequency [Hz]

Nor

mal

ized

Pow

er S

pect

rum

[dB

]

0.001

0.01

0.1

1

Nor

mal

ized

Vel

ocity

w.r

.t. c ox

Conventional Approach --Signal power is distributed over slowRC regime.

Modulated Approach --Signal power is concentratedin fast LC regime with the help ofbetter wires.

oxox

Amplitude

Velocity

Velocity

Amplitude

Modulated Signal over Global Wire

0 0.5 1 1.5 2 2.5 30

0.5

1

1.5

2

[V]

Time [ns]

Output

Reference Signal(Input)

• Taken with HP54750A digital sub-sampling oscilloscope

20 mm Delay: 283 ps (including modulator and demodulator delays,excluding buffer delay ) 1/2 Speed of Light

Measured Waveforms

Outline

• Detrimental Effects of Interconnect Inductance

• Taking Advantage of Inductance– Near Speed of Light Propagation of Electrical

Signal– 10 GHz Standing Wave Clock

• Conclusions

Travelling Waves

Zo

Incident wave

Page 6: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Travelling Waves

Zo

Incident wave

Travelling Waves

Zo

– Wave characteristics• Phase varies linearly with position• Amplitude is constant with position

– Used in most conventional clock distributions

Incident wave

Standing Waves

ZL = 0( L = -1)

Standing Waves

Reflected wave

Standing Waves

Reflected wave

Standing Waves

Reflected wave

Page 7: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Standing Waves

Standing wave

Standing Waves

Standing wave

Standing Waves

Standing wave

Standing Waves

Standing wave

Standing Waves

Standing wave

Standing Waves

Standing wave

Page 8: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Standing Waves

Standing wave

Standing Waves

– Wave characteristics• Phase is constant with position (with 180º discontinuities)• Amplitude varies sinusoidally with position

Standing wave

Standing Waves on Lossy Wires

+

Residualtravelling waveStanding wave

• Wire loss causes skew• Design using low-loss, inductive wires

Incident wave Attenuatedreflected wave

=

Standing-Wave Oscillator (SWO)

Tank

Gain/2

LC oscillator

)(2

1and

)(

dclk

dd

CCLfl

L

CCR

n

lgConditions for

oscillation at fclk

Standing-waveoscillator

SWO Coupling

ccp

ccp

ccp

ccp

ccp

ccp

ccp

ccp

ccp

ccp

Icouple

• Couple by directly connecting the wires• Low-Q oscillators have wide locking range

SWO Clock Grid

Page 9: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

SWO Clock Grid SWO Clock Grid

SWO Clock Grid SWO Clock Grid

Clkinj

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (0/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (1/12)Tclk

Page 10: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (2/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (3/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (4/12)Tclk

SWO Clock Grid WaveformV

olt

age

(arb

itra

ry u

nit

s)

Y (wavelengths) X (wavelengths)

t = (5/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (6/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (7/12)Tclk

Page 11: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (8/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (9/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (10/12)Tclk

SWO Clock Grid WaveformV

olt

age

(arb

itra

ry u

nit

s)

Y (wavelengths) X (wavelengths)

t = (11/12)Tclk

SWO Clock Grid Waveform

Vo

ltag

e(a

rbit

rary

un

its)

Y (wavelengths) X (wavelengths)

t = (12/12)Tclk

Die Micrograph

Locking range 9.8 GHz – 10.5 GHz (6.4% range)Skew 0.6psJitter (added toexternal source)

<0.5ps rms(1.4ps rms external source)

Power 430mW

MUX and mixer

Cross-coupledpair

Differentialtransmission line

Accumulation-modeMOS varactor

Open-drainbuffer

3.0mm

Page 12: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Skew Measurements

• Tuned grid– 0.6ps global skew

SWOclock grid

1.4ps-rms

1.5ps-rms

t ps ps ps rmsjit grid, ( . ) ( . ) .15 14 052 2

Jitter Measurement

CLKref

Outline

• Detrimental Effects of Interconnect Inductance

• Taking Advantage of Inductance– Near Speed of Light Propagation of Electrical

Signal– 10 GHz Standing Wave Clock– Other Distributed Designs

• Conclusions

Distributed Amplifier

Out

RtermIn

Rterm

Amplifier S-parameters

Frequency (GHz)

S-p

aram

eter

s (d

B)

S11Vds = 1.5V Vgs = 1.3V Ids = 60mA

S12

S22

S21Unity Gain Bandwidth

0 10 20 30-20

-10

0

10

-14 dB

Distributed OscillatorFeedback

Z0 Out

In

W3

W3

W3

Z0+ Z0+ Z0+

Z0+ Z0+ Z0+ Vout_osc

Output wrapped around to the input

Page 13: Design with On-Chip Interconnect Inductance (Invited)Design with On-Chip Interconnect Inductance (Invited) S. Simon Wong, C. Patrick Yue1, Richard Chang2, Frank O’Mahony3 Center

Phase Noise Comparison

Frequency (GHz)

Nor

mal

ized

Pha

se N

oise

(dB

c/H

z)

Razavi,

Wagemans,

Ali,

Craninckx,

Ahrens,

This Work

P=1mW, fm/f0

ISSCC 97

ISSCC 98

ISSCC 96

ISSCC 95

Lo-Pow Symp, 98

0 5 10 15 20-190

-180

-170

-160

-150

Hajimiri,

(std. CMOS)

(Glass substrate)

(bipolar)

(Bondwires)

(Bondwires)(std. CMOS)

(std. CMOS)PhD Thesis, 98

16.6

Conclusions

• At high frequencies, interconnect inductance can no longer be ignored

• Extraction of inductance in a typical IC environment is extremely difficult

• Only a small number of interconnects exhibit inductive behavior

• With dedicated return path, interconnect inductance can be controlled & optimized

• Incorporating inductance into distributed designs offer new opportunities


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