Date post: | 19-Jan-2016 |
Category: |
Documents |
Upload: | natalie-newman |
View: | 219 times |
Download: | 0 times |
Develop (K0.5Na0.5)NbO3 Lead-Free Ferroelectric Thin Films by the RF Sputtering Technique
Hsiu-Hsien Su
CONTENTSIntroduction
Experimental procedures
Results and discussion
Conclusion1
INTRODUCTION
Target by the solid-state method.
By the use RF magnetron sputtering.
Thin films are deposited on the ITO substrates.
2
EXPERIMENTAL PROCEDURES
3
K2O3, Na2CO3, Nb2O5K2O3, Na2CO3, Nb2O5
Mixing and Ball Mill (12h)Mixing and Ball Mill (12h)
Dried, ground, and calcined (865 /24h)℃Dried, ground, and calcined (865 /24h)℃
Sintering (1140 /3h) in the air℃Sintering (1140 /3h) in the air℃
(K0.5Na0.5)NbO3 Target(K0.5Na0.5)NbO3 Target
EXPERIMENTAL PROCEDURES
4
Sputtering (K0.5Na0.5)NbO3 on the ITO Substrate Sputtering (K0.5Na0.5)NbO3 on the ITO Substrate
XRD/FE-SEM/AFMXRD/FE-SEM/AFM
Al ElectrodeAl Electrode
MeasuredMeasured
Measured system
5
RESULTS AND DISCUSSION
6
No annealing 400 C annealing
500 C annealing 600 C annealing 7
SEM
No annealing
400 C annealing
500 C annealing
600 C annealing
AFM microstructure8
Roughness: 14.11 nm Roughness: 4.01 nm
Roughness: 3.627 nm Roughness: 7.762 nm
Applied voltage (V)
0 5 10 15 20
Lea
kag
e cu
rren
t d
ensi
ty (
A/c
m2 )
10-13
10-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
As-deposited400oC500oC600oC
Leakage current density9
CONCLUSIONThe main effect of the annealing temperature is
grain growth
Higher annealing temperature will cause to
Abnormal grain growth
Pores increasing
Leakage current increasing10
CONCLUSION 400 °C annealing reveals
1. The best roughness
2. The best grain growth
3. The best leakage current density
11
13