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Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe...

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Development of CMOS CSA for Point Contact HPGe Detectors Zhi Deng for HPGe detector group @ Department of Engineering Physics, Tsinghua University Application of Germanium Detector in Fundamental Research Beijing, March 2329, 2011
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Page 1: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

Development of CMOS CSA for Point Contact HPGe Detectors

Zhi Deng for HPGe detector group @ 

Department of Engineering Physics, Tsinghua University

Application of Germanium Detector in Fundamental ResearchBeijing, March 23‐29, 2011

Page 2: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

Outlines

• Introduction

• CMOS CSA Design– Noise Optimization

– Reset

• Test Results

• Summary & Future Plan

2011/03/25 Application of Germanium Detector in Fundamental Research 2

Page 3: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

Introduction

• ULE HPGe Detector

2011/03/25 Application of Germanium Detector in Fundamental Research

The key technologies for lowering the energy threshold is using small capacitance detector and ultra low noise readout

Point-contact HPGe, ~1pF

3

Page 4: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

• JFET vs. CMOS for small capacitance detectors

Application of Germanium Detector in Fundamental Research2011/03/25

C C C

ENCa e C

a K C a i

tot in

nw totF tot n

= +

= + +

det

2 12 2

22

32

ττ

tm, ns

As the detector capacitance goes down, the contribution from 1/f noise become non-dominant anymore!

4

Page 5: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

• What is the limit for 1/f noise

2011/03/25 Application of Germanium Detector in Fundamental Research 5

e.g., Kf = 10-25J, Cd=1pF ENCf ~ 5 e-

( )222

, 2

ff d g

g

f opt f d

KENC a C C

C

ENC K C

π

π

= + →

≈Borrowed from Paul O’Connor’s talk in FEE2006

Why not CMOS then?

Page 6: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

CMOS CSA Design

• Noise Optimization

2011/03/25 Application of Germanium Detector in Fundamental Research 6

PMOS for lower 1/f noise, with optimized size Adjustable bias current

for noise study

Pulse reset for dischargingSee the next slide

Page 7: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

• Reset

2011/03/25 Application of Germanium Detector in Fundamental Research 7

Pulse Reset 1 Pulse Reset 2

On Chip Off Chip

Charge Injector with opposite polarity

Page 8: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

• Layout and test board

2011/03/25 Application of Germanium Detector in Fundamental Research 8

250μm

200μ

m

Page 9: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

Test Results

• Test Setup 

2011/03/25 Application of Germanium Detector in Fundamental Research 9

Shaper

Signal Generator

Oscilloscope

Vacuum chamber

Power Supply

BumpTemperature sensor

Page 10: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

• Injected with test signals

2011/03/25 Application of Germanium Detector in Fundamental Research 10

Rise time is about 30ns for 1.5m long cable

After shaper

Page 11: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

2011/03/25 Application of Germanium Detector in Fundamental Research

0 2 4 6 8 10 120

5

10

15

20

25

30

Shaping Time [μS]

ENC

[e]

T=25oCT=18oCT=10oCT=0oCT=-10oCT=-20oCT=-30oCT=-45oCT=-60oCSys@T=25oCSys @ T=-60oC

6.5e

11

• ENC

Page 12: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

Summary & Future Plan

• A CMOS charge sensitive preamplifier has been designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved without detector. Testing with detector is undergoing.

• A second version chip has been designed and fabricated and it will also be evaluated soon.

• More deep study on cryogenic CMOS transistor model, long term stability…

2011/03/25 Application of Germanium Detector in Fundamental Research 12

Page 13: Development of CMOS CSA for Point Contact HPGe Detectors · designed for point‐contact HPGe detectors, with noise optimized for 1pF capacitance. Sub‐10e ENC has been achieved

2011/03/25 Application of Germanium Detector in Fundamental Research 13

Thanks

The test setup has been done for the first prototype ASIC with the first prototype of point contact HPGe detector


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