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This presentation does not contain any
proprietary or confidential information
Zhenxian Liang, Fred Wang, Laura Marlino
Organization: ORNL
Email: [email protected]
Phone: 865-946-1467
APEC 2012, Industry Session 2.3 February 8, 2012
Development of Packaging Technologies for Advanced Automotive Power Module
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APEEM Components are Critical and Unique to Electric Drive Vehicles
Traction Drive Components (varies with vehicle architectures)
Battery charger – necessary for plug-in and all electric vehicles.
Bi directional boost converter – steps up the battery voltage to a higher level when the traction system requires a higher operating voltage than the battery can supply.
Inverter – converts direct current (DC) to alternating current (AC) to provide phased power for vehicle traction machines.
Electric motor – provides power for driving.
Power Management (varies within vehicle architectures)
DC-DC converter – steps down the high battery voltage to provide auxiliary power busses to operate accessories, lighting, air conditioning, brake assist, power steering, etc.
HV
Battery
(200–450 V DC)
Torque
to
Drive
Wheels
120 V AC
Battery
Charger
Bi-directional
Converter
Electric
Motor
Inverter
DC-DC
Converter
Accessory
Loads
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Challenges for Power Electronics In HEVs/PHEVs/BEVs
Performance (Electrical, Thermal)
Density (per volume/weight)
Cost ($/kW)
Reliability (Thermo-mechanical)
Current power electronics and electric machine technologies must advance to achieve lower cost, smaller and lighter footprints, and higher efficiency to meet marketplace demands.
http://www.motortrend.com/oftheyear/car/1201_2012_motor_trend_car_of_the_year_contenders_
and_finalists/photo_255.html
http://alternativefuels.about.com/od/2010hybridreviews/ig/2010-Toyota-Prius-photos.-
6Hz/2010-Prius-Gen2-Gen3-inverter.htm
Functions (Intelligence)
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Automotive Power Module Assembly
Power Semiconductors
Electrical Interconnection
Thermal Management
Mechanical Support
http://www.mitsubishielectric.com/news/2011/
0407.html
Infineon HybridPack1 Module
Mitsubishi TPM Module
Toyota Prius’III Module
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Automotive Power Module: Cost Estimation
IGBT die
FWD die Substrate
DBC Die attach
Top Connection
Base Plate Substrate
Attach
Encapsulate
I/O terminal, House
Manufacture Cost
Semiconductor Cost
Packaging Manufacture
Tree Structure for Power Module Cost Modeling
Power Module
Manufacture
Material &
Consumption:
Cleaner;
Utilities
Process:
Soldering I&II,
Cleaning Wire
bonding, gel
filling & Curing,
Assembling
House/ Frame
IGBT Die
FWD Die
DBC Substrate
Base Plate
Bolt/glue
Cover
Substrate Attach
Die Attach
Encapsualate
Wire Bond
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IGBT Die
Area_Cost
Delta T_
Reliability
Power Loss_
Efficiency
Semiconductor Characterization
Vce=V0+r*J=V0+r*(I/S)
Edswitching=u*J2+w*J
Thermal Characterization
Sja *
Reliability Characterization
B
fTj
ATjN )()(
Electrical Characterization
Lp, Rp
0 100 200 300 400 500 600 7000
50
100
150
200
250
300
Time(S)
Curr
ent(
A)
An Inverter Input Current Profile Under US06 Drive Cycle
Drive Cycle
IGBT Die
area
ORNL Power Module Evaluation
Program
Delta T
Automotive Power Module: Comprehensive Design
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Development of Power Module Packaging Technologies
High Temperature Robustness
High Electrical Efficiency
Cost Effective Manufacturability
Highly Efficient Cooling
HT Material Integrity
High-melting bonding; Inorganic
encapsulate;
Nano Electrical and Thermal materials
CTE Matching
CTE modified Materials;
Structure/buffer optimization
Structural Optimization
Optimized Electrical Interconnection;
Integrated cooling and advanced
mechanism
Processing Advance
Reflowing, Brazing /Sintering, Transient
liquid phase bonding, thermal press
bonding, deposition, etc.
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ToyotaPrius10_OneDie
ToyotaPrius10_TwoDie
InfineonHP1 NissanLeaf
Thermal Resitance (C/W) 0.43 0.22 0.27 0.31
Die area (10xcm2) 0.11 0.22 0.20 0.17
Specific Thermal resitance (Cm2.C/W)
0.47 0.49 0.54 0.52
0
0.1
0.2
0.3
0.4
0.5
0.6
Thermal Resistance
Comparison
Power Module: Thermal Characterization
1.0E-3
1.0E-2
1.0E-1
1.0E+0
1.0E+1
0 1 2 3 4 5 6
Th
erm
al T
ime
Co
ns
tan
t (S
)
Order Number
Prius_One_die
Prius_two_die
Infineon HP1
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0.44 mΩ
11.3 nH14.4 nH
Positive
7 mΩ19.6 nH
Negative
Neutral
7 mΩ19.6 nH
0.33 mΩ
0.17 mΩ0.18 mΩ
7.3 nH 6.5 nH
0.44 mΩ
11.3 nH14.4 nH
0.33 mΩ
0.17 mΩ0.18 mΩ
7.3 nH 6.5 nH
Power Module: Electrical Characterization
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5
Ice (
A)
Vce (V)
IGBT I-V Curve
P-side S-side
0
100
200
300
400
500
0
50
100
150
200
250
0 200 400 600 800 1000 1200
Vo
ltag
e (
V)
Cu
rren
t (A
)
Time (nS)
Ice
Vce (S-Side)
Vce (P-Side)
IGBT Switching Curve
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Patent Pending: serial number 61/509312
ORNL Planar Bond Automotive Power Module
Power Semiconductors stage
Integrated Advanced
Cooler
Integrated Advanced Cooler
Integrated Planar Bond Power Module
Planar Bond Power Stage Electrical Connection
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Patent Pending: serial number 61/509312
Planar_Bond_All
Planar Bond Module Packaging: Manufacturability
Wire Bond Packaging
1 Substrate Preparation
3 Substrate Attach
2 Die Attach 4 Terminal Frame Attach
5 Wire Bond 6 Encapsulate 7 assembly
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Planar Bond Module: Electrical Performance Simulation
-400 -200 0 200 400 0
100
200
300
400
500
Time (ns)
Ice
(A
), V
ce
(V
), P
(W
/0.0
03
), E
mJ
/15
)
Ice Vce
Eoff
Poff
ToyotaPrius10 PlanarBondAll
Lp (nH) 50.3 12.8
Rp (0.1xmOhmic)
23.5 2.2
0
10
20
30
40
50
60
Electrical Parameters
Comparison
-600 -400 -200 0 200 400 600 0
50
100
150
200
250
300
350
400
450
500
Time (nS)
Vc
e(V
)
L:
45nH
30nH
20nH
15nH
10nH
5nH
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Inductance (nH) Experimental Value Calculated Value
Planar Bond_Lower IGBT 10.5 6.3
Wire Bond-Lower IGBT 31.9 23.5
0 100 200 300 400 500 600 0
20
40
60
80
100
120
140
160
180
Time(S)
Po
we
r L
os
s (
W)
Rp=0.22m, P=1.030W
Rp=2.35m, P=11.08W
Planar Bond Module: Electrical Experiments and Effects
10
15
20
25
0 20 40 60 80
Eo
ff (
mJ)
Parasitic Inductance (nH)
X
X
Lp=10.5nH, Eoff=15.6mJ
Lp=31.9nH, Eoff=17.2mJ
0
50
100
150
200
250
300
350
400
450
500
0
20
40
60
80
100
120
140
160
180
200
0 500 1000 1500 2000
Vo
ltag
e (
V)
Cu
rren
t (A
)
Time (nS)
Vce(WB)=156V
Vce(PB)=72V
Ice Vce
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Planar Bond Power Module: Thermal Performance Simulation
3-D Thermal Model of power
module with Cooler
IGBT, Diode Power loss;
Coolant flow rate;
Pressure Drop;
Coolant inlet temperature;
Single- or Double-sided cooling.
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)(
$ ,
aj
spjaAreaDie
TTP
S
kW
Planar Bond Module: Thermal Performance Measurement Comparison and Effects
NissanLeaf ToyotaPrius10 PlanarBondAll
Specific Thermal resitance (Cm2.C/W)
0.52 0.471 0.334
0
0.1
0.2
0.3
0.4
0.5
0.6
Thermal Resistance
Comparison
Cost= Die size (S) * $/unit area
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Si IGBT Characterization and Evaluation at 200˚C
fs=10kHz
fs=15kHz
fs=10kHz
fs=5kHz
Rthja=0.73K/W
Rthja=0.86K/W
Rthja=1.04K/W
Losses in one phase leg IGBT thermal runaway analysis
Hot plate
Nondestructive SOA Test Latch-up current test at 250˚C
Coolant temperature: 105˚C
Total loss curve
Power
dissipation line
20 40 60 80 100 120 140 160 180 200 0
20
40
60
80
100
120
140
Junction temperature
IGB
T P
ow
er
Lo
ss
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105˚C water/ethylene glycol
Layout Design
High Temperature Device Packaging Development
90˚C transmission oil
High temperature phase-leg
module prototype
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Ag Sintering Development for High Temperature packaging
Ag Bonded DBC Substrates
Bond Line View After Tear Down
Cross sectional View of Bond Line
Bond Strength vs. Topography
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Summary and Future Work
Developed power module packaging technologies, focusing on
improvements in performance, reliability and cost effectiveness
through structure optimization, material and processing
developments.
A planar power module prototype features low electric parasitics
and thermal resistance. Additionally, the package allows for ease
of fabrication and low manufacturing costs.
Further research into thermo-mechanical properties needed to
assure the reliability of power electronics in automotive harsh
environments.
Develop advanced structure/material/process schemes for high
temperature and high frequency operation of Si and wideband gap
(SiC, GaN) power devices to advance HEV and EV technologies.
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Acknowledgement
Thanks And Questions?
The automotive power electronics packaging work has been primarily supported by DOE under Vehicle Technologies Program. The authors would also like to thank their colleagues, Puqi Ning, Andrew A. Wereszczak, Randy Wiles, all with ORNL for the contribution to this presentation
