Confidential DAINIPPON SCREEN CONFIDENTIAL 1 SE-72-____-L2
Sept 17th, 2012
Semiconductor Equipment Company
Dainippon Screen Mfg. Co., Ltd.
DW-3000
Direct Imaging system for advanced packaging
Confidential DAINIPPON SCREEN CONFIDENTIAL 2 SE-72-____-L2
This document contains trade secrets and/or
proprietary information. You are permitted to use
the information only for the purpose of internal
discussion on the subject matter and with your
affiliated or subsidiary companies. Unauthorized
divulging of such information to others (excluding
your affiliated or subsidiary companies) is strictly
prohibited.
Confidential 3 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Global Roadmap for 3D Integration with TSV
2007 2008 2009 2010 2011 2012 2013 2014 2016 2006 2015
MEMS &
Sensors
MEMS
cavity MEMS
Cap
Sensor
Module MEM
S ASIC
CMOS
imagers SOC CIS
WLOptics
SOC CIS
ShellOP “Edge”
SOC CIS
TSV / WLP
SOC CIS 1.1µm
Consumer
BSI
3D
interposer interpos
er
ASIC MEMS
Multi-ASIC CMOS / MEMS
ASIC
Analog/RF Sensor
Opto WLP
MOEMS
Glass vias
Power, RF, Analog & Mixed
signals components PA / IGBT /
MOSFET
Ground
TSV
Stacked DDR3 ≥ 1.6Ghz
≥ 16Gbit
Stacked NAND Flash / NVM Stacked Memories
Logic + Memory
“wide I/O
interfaces”
Mem Logic
TSI
CPU /
GPU
eDRAM Logic 22-28nm
TSI
high perf.
ASICs
HB-LED interposer modules
LED Driver Multi-chip
modules LED Silicon
Module
CIS
High-end
BSI
ISP + mem
Logic multi-cores
HPC
RF-SiP
IPD
DSP
mem
CIS
Sapphire or
Silicon
Power GaN
LED
Driver
LED
Digital & Analog
partitioned
“3D-SOCs”
Small die
ASICs Logic N
Logic N+2
Analog /
RF
RF eFlash
Logic
Analog
eDRAM MEMS
Heterogeneous
3DICs Large die
Logic only
interposers
Baseband /
APE Mobile appliances Logic
DRAM
DRAM
DRAM
BB / APE
Wide IO mem
Logi
c N N+1
N+1 N+2 N+3
Confidential 4 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Advantages • Throughput of 68WPH @100mJ/cm2 for 300mm Wafer
• Suitable for flip-chip and advanced packaging
• Handles non-linear distorted wafers by W-to-W data correction at Die-level
• Wide focus latitude and superior resist profile due to single wavelength
• Job-execution without mask reduces cost and allows faster time to market.
• Allows Pattern-adjustment (e.g. size of contacthole) by mouse-click !
Features • High power YAG laser at 355nm (i-line).
• Front- and back-side alignment system.
• W-to-W local alignment data correction.
• Numerical Aperture = O,1
• Mask-less pattern transfer to wafer-surface.
DW-3000 Direct Imaging Exposure System
Confidential 5 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
DW-3000 - GLV
Smart phones Mobile PCs Servers
Confidential 6 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
UVDI Module
iGLV Device
16W YAG Laser
16W YAG Laser
Line Illumination Optics
UVDI GLV Modules
5:1 Reduction Optics
Line Images
Wafer
Direct Imaging System with GLV
◆GLV module for ultra-violet direct imaging in lithography system
Confidential 7 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Exposing data generation
Data transfer PC Head1
Data transfer PC Head2
Manufacturing site
Design
Data in
GDS
format
Copy
Design
Data
Parameters
Conversion order with RIP tool
Exp
ose
Data
Exp
ose
Data
From GDS data to RIP data.
RIP data is being transferred.
Ordering data conversion.
GDS is being converted
to RIP data.
Data transfer to exposing head
Transfer data
is selected
from main
panel.
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urad
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縮 縮 縮
縮 縮 縮 縮 縮 縮 縮 縮
Y
Θ
1234567890
1234567890
ppm
ppm
1234567890
Start
Stop
25 E m p ty
24 E m p ty
23 P rep ared
22 P rep ared
21 P rep ared
20 P rep ared
19 P rep ared
18 P rep ared
17 P rep ared
16 P rep ared
15 P rep ared
14 P rep ared
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12 P rep ared
11 P rep ared
10 P rep ared
9 P rep ared
8 P rep ared
7 P rep ared
6 P rep ared
5 P rep ared
4 P rep ared
3 P rep ared
2 P rep ared
1 P rep ared
Recipe_123456789
RIP_Data_123456789
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RIPポ ポ ポ ポ ポ
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RIPポ ポ ポ ポ
縮 縮 縮 縮 縮 縮
X
Θ
縮 縮 縮 縮 縮 縮 縮 縮 縮 縮 縮 縮
X 1234567890
1234567890Y
um
um
deg
X 1234567890
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Y
um
um
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um
mj/ cm2
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Summary of DW-3000 data processing
Customer LAN DW-3000
Exposure data generate
ordering PC
Confidential 8 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
55.0
60.0
65.0
70.0
75.0
80.0
85.0
90.0
95.0
10 100 1000 10000
100mJ/cm2 TP
300mm 68w/h
200/300mm
Bridge use 74w/h
200mm
Only use 90w/h
(wph)
Exposure Dose (mJ/cm2)
Th
rou
gh
pu
t
Condition Number of head : 2head Power : 4.8W
Stripe width : 8mm Alignment time: 8.5sec@4 point
Wafer exchange & stage travel time : 11.5sec
300mm
Only 200mm use
200mm/300mm bridge
Productivity
Confidential 9 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Laser diode 650nm Auto Focus
IR Reflection light through Si Back side
Visible Light
CCD Camera Front side
Alignment
Linear Motor + Air Slide X-Y Stage
16W YAG Laser
Paladin Advanced 355-16000 Light Source
iGLV (integrated Grating Light Valve) Spatial Light Modulator
68 WPH @ 100mJ/cm2 300mm wafer Throughput
≦1um (3σ) w/ Back-side Alignment
≦1um (3σ) w/ Front-side Alignment Overlay
Performance
≧3um (L/S) Resolution
Specifications Item
DW-3000 Specification
Confidential 10 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
DW-3000
Performance, Functions
and Applications
Confidential 11 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Overlay result (Topside)
Tool Performance and Applications
X Y
Average 0.053um 0.051um
3σ 0.489um 0.559um
-1
-0 .9
-0 .8
-0 .7
-0 .6
-0 .5
-0 .4
-0 .3
-0 .2
-0 .1
0
0 .1
0 .2
0 .3
0 .4
0 .5
0 .6
0 .7
0 .8
0 .9
1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Exposure number
Overla
y (u
m)
X:Average+3σ
Y:Average+3σ
300mm wafer
X Y
Average -0.11um -0.200um
3σ 0.620um 0.602um
Overlay result (Backside)
Post plating Post develop
t=57um, D=30um i-line CAR for Cu pillar post
TSV bottom
opening with
i-line CAR
100um deep Si
Intentional partial dose to
generate tapered sidewall
(Negative tone PR)
D=100um
D=40um
Confidential 12 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
tok P-CH3000 t=50um
Dose : 90mJ/cm2
Substrate: Bare Si
PEB :75℃ 5min
Develop :TMAH 2.38%
60sec x 6 puddle
Φ30um Hole Focus= 0um
Φ10um Hole Focus= 0um
PR cross section profiles (1)
Via holes on thick i-line positive CAR
Confidential 13 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
tok i-line positive CAR:TCIR-ZR8800 t=3.3um
0um 0um
3um L&S 3um Hole
Dose : 130mJ/cm2
Substrate: Bare Si
PEB :110℃ 90sec
Develop :TMAH 2.38%
60sec x 1puddle
JSR i-line positive CAR : THB-152P t=10um
0um 0um
3um L&S 5um L&S
Dose : 40mJ/cm2
Substrate: Bare Si
PEB :110℃ 5min
Develop :TMAH 2.38%
45sec x 2puddle
PR cross section profiles (2)
Vias and Lines/spaces (Near the resolution limit)
Confidential 14 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
201001 201002
201003 201004 201005 201006
201007 201008
102001 102002
102003 102004 102005 102006
102007 102008
Unique ID function
Lot #1 Wf #2
Every chip can have its own unique ID number.
Lot #2 Wf #1
Ultimate traceability
1 01 004
101001 101002
101003 101004 101005 101006
101007 101008
Lot #1 Wf #1
Chip ID
Lot ID Wafer ID
Confidential 15 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Contact area for cathode
Photoresist wall
Ring shape wall can be exposed
during main exposure. Ring
diameter and width are set by
exposure tool.
Wafer edge patterning : For plating process
Photoresist wall
Plating
solution
Anode
Cathode
Confidential 16 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Convenient and cost-less in evaluating new resist having an opposite tone
(Negative <---> Positive)
Tone reverse : Ease of resist evaluation
Negative Positive
Confidential 17 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Original data
20um
Line width adjustment
In case line width has been shifted by changing process
conditions, line width can be fine adjusted by using bias
change parameters.
25
um
18um
19
um
X and Y values can be changed
independently.
Confidential 18 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
5.0um
“Local alignment” feature (1)
Issue: Wafer shows non-linear distortion after thinning
Original wafer shape
Very rigid and
concrete
e.g. wafer may get longer in Y-direction.
e.g. wafer may get longer in X-direction.
Y
X
Confidential 19 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
What a “Global Alignment” can do / can not do…
“Local alignment” feature (2)
Global Alignment can adjust…
• X and Y shift
• Rotation
• Linear expansion and shrinkage
of the wafer ( = linear distortion )
1
2
3 4
but Global Alignment can NOT
compensate Non–linear distortion!
Confidential 20 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
5.0um
Local alignment function does additional fine adjustment onto exposure data,
wafer by wafer.
“Local alignment” feature (3)
1
2
3 4
5
6 7
8 9
Measure location
of each mark
Expose
Modify exposure
data
Calculate wafer
distortion based on
the offset of those
marks from ideal
location
Confidential 21 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL 21
X Y
Average -2.11um 0.90um
3σ 6.95um 5.68um
X Y
Average -0.59um 0.84um
3σ 1.93um 1.64um
5.0um 5.0um
Global Align. only Global Align. & Local Align.
“Local alignment” – Result (4)
Intentional distortion position
Exposure position
Confidential 22 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
TSV patterning & Si etching
Bosch etching
PR pattern done by DW-3000
Resist : TCIR ZR880(i-line CAR from tok)
Thickness : 3.4um
Dose : 130mJ/cm2
Hole size : Top = 3.62um
Bottom = 3.42um Si
Resist
● perfect TSV hole - near the resolution limit !
3.4um
60um
Confidential 23 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
57um
Cu pillar formation
After Cu plating
Resist : P-CR4000
(i-line CAR from tok)
Thickness : 57um
Dose : 140mJ/cm2
● Straight profile with thick photoresist
Confidential 24 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Patterning example to gap-fill
Patterning in TSV at i-line positive CAR
100u
m
Si
Dose :500mJ/cm2
PEB :90℃ 3min
Develop :TMAH 2.38%
60sec X 3puddle
30um
120u
m
Achieves deep bottom opening on SiO2
Confidential 25 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
0% Dose
50% Dose
100% Dose
Final device
Bump
Pad
through
die to
bump
Front-end processed die
RDL line
Gray scale exposure advantage (1)
Vias and RDL patterns can be created with single exposure.
Confidential 26 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Exposure condition:Three levels of intensity 0%, 25% and 100% with one exposure.
0% Intensity
40um
25% Intensity 25%
100um
100% 100% Intensity
300mJ/cm2
Gray scale exposure advantage (2)
Negative photoresist Intentional slant wall angle
Confidential 27 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Reality is that
chips shift in X/Y
and rotates.
If chips are
perfectly mounted,
lines can be
generated as
designed.
Lines are
disconnected
due to chip
mounting error.
MCM (Multi Chip Module) - with Mask tools
Confidential 28 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Measure
mount error
Design rule
check new
data
Redesigned
data converted
to NEW
exposure data
Feed back to
design data
Mask tools do not have
capability to deal with.
With DW
Adding these special effect
Redesigned exposure
data will correct
mounting errors.
MCM (Multi Chip Module) - with DW-3000
Confidential 29 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Lower Power and High Performance IC´s
Smart phones Mobile PCs Servers
DNS continues to focus on further boosting productivity,
to meet the rapidly evolving needs of advanced package
manufacturing.
Confidential 30 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL
Headquarters: Kyoto, Japan
Foundation: Oct. 11, 1943
CEO: Akira Ishida
COO: Masahiro Hashimoto
Employees: 4,890(Consolidated)
2,089(Non-consolidated) (Fiscal year ended March 31, 2012)
Revenues: JPY 250 billion(Consolidated)
JPY 216 billion(Non-consolidated) (Fiscal year ended March 31, 2012)
Dainippon SCREEN Mfg.Co.
White Canvas Rakusai
(Rakusai Plant)
Process Technology Center
(Hikone Plant)
Fab. FC-1, FC-2
(Hikone Plant) Taga Plant
13%
20%
67%
Media &
Precision Tech.
FPD Equipm.
Semi Equipm.
Other