55
ECOE RESEARCH GROUP C.Y.CHANG, NATIONAL ACADEMIES, USA June,2009
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ECOE RESEARCH GROUP
CYCHANG
NATIONAL ACADEMIES USA
June2009
ECO-ERA
bull ECO-CULTURE
bull ECO-ECONOMY
bull ECO-SCIENCES
HOW TO CTREATE
NEW CREATIVE MENTALITY
CYCHANGNATIONAL ACADEMIES USA
June2009
CYC ECO-E RESEARCH GROUP
April 232009
PROLOGUEbull GREEN MOTHER EARTHbull GREEN SCIENCEbull GREEN ECONOMYbull GREEN PHILOSOPHYGREEN CULTURE
bull GREEN PHILOSOPHYGREEN CULTUREbull GREEN ECONOMY
bull HOW
QUANTUM LOCALIZATIONIN A PERPENDICULR MAGNETIC
FIELD
QUANTUM LOCALIZATION IN
MQWmdashPRBV57N20 GOSSARD
QUANTUM LOCALIZATION IN INSULATOR
Magnetic field confined metallic particle polariztion
bull Metallic polarizability by Lindhard
bull εm＝ 1+(4π e2NL3) Σ∣ ＜ n r n∣ ∣ rsquo ＞∣ 2
bull (En ndashEnrsquo)bull Where bull N=dm-3
bull dm=Lm 2a
B
bull Lm=magnetic length=radic2πheB (Gassard et al
bull PRBV57N201998)
Si Oxide
Ta 60nmPtMn 15nm
CoFe 3nm
CoFe 3nmTa
Al
Al
Temporary Structure(0 Cycle)
090211 6
Al2O3 = 6 nm
Si3N4 60 nm
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
ECO-ERA
bull ECO-CULTURE
bull ECO-ECONOMY
bull ECO-SCIENCES
HOW TO CTREATE
NEW CREATIVE MENTALITY
CYCHANGNATIONAL ACADEMIES USA
June2009
CYC ECO-E RESEARCH GROUP
April 232009
PROLOGUEbull GREEN MOTHER EARTHbull GREEN SCIENCEbull GREEN ECONOMYbull GREEN PHILOSOPHYGREEN CULTURE
bull GREEN PHILOSOPHYGREEN CULTUREbull GREEN ECONOMY
bull HOW
QUANTUM LOCALIZATIONIN A PERPENDICULR MAGNETIC
FIELD
QUANTUM LOCALIZATION IN
MQWmdashPRBV57N20 GOSSARD
QUANTUM LOCALIZATION IN INSULATOR
Magnetic field confined metallic particle polariztion
bull Metallic polarizability by Lindhard
bull εm＝ 1+(4π e2NL3) Σ∣ ＜ n r n∣ ∣ rsquo ＞∣ 2
bull (En ndashEnrsquo)bull Where bull N=dm-3
bull dm=Lm 2a
B
bull Lm=magnetic length=radic2πheB (Gassard et al
bull PRBV57N201998)
Si Oxide
Ta 60nmPtMn 15nm
CoFe 3nm
CoFe 3nmTa
Al
Al
Temporary Structure(0 Cycle)
090211 6
Al2O3 = 6 nm
Si3N4 60 nm
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
PROLOGUEbull GREEN MOTHER EARTHbull GREEN SCIENCEbull GREEN ECONOMYbull GREEN PHILOSOPHYGREEN CULTURE
bull GREEN PHILOSOPHYGREEN CULTUREbull GREEN ECONOMY
bull HOW
QUANTUM LOCALIZATIONIN A PERPENDICULR MAGNETIC
FIELD
QUANTUM LOCALIZATION IN
MQWmdashPRBV57N20 GOSSARD
QUANTUM LOCALIZATION IN INSULATOR
Magnetic field confined metallic particle polariztion
bull Metallic polarizability by Lindhard
bull εm＝ 1+(4π e2NL3) Σ∣ ＜ n r n∣ ∣ rsquo ＞∣ 2
bull (En ndashEnrsquo)bull Where bull N=dm-3
bull dm=Lm 2a
B
bull Lm=magnetic length=radic2πheB (Gassard et al
bull PRBV57N201998)
Si Oxide
Ta 60nmPtMn 15nm
CoFe 3nm
CoFe 3nmTa
Al
Al
Temporary Structure(0 Cycle)
090211 6
Al2O3 = 6 nm
Si3N4 60 nm
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
QUANTUM LOCALIZATIONIN A PERPENDICULR MAGNETIC
FIELD
QUANTUM LOCALIZATION IN
MQWmdashPRBV57N20 GOSSARD
QUANTUM LOCALIZATION IN INSULATOR
Magnetic field confined metallic particle polariztion
bull Metallic polarizability by Lindhard
bull εm＝ 1+(4π e2NL3) Σ∣ ＜ n r n∣ ∣ rsquo ＞∣ 2
bull (En ndashEnrsquo)bull Where bull N=dm-3
bull dm=Lm 2a
B
bull Lm=magnetic length=radic2πheB (Gassard et al
bull PRBV57N201998)
Si Oxide
Ta 60nmPtMn 15nm
CoFe 3nm
CoFe 3nmTa
Al
Al
Temporary Structure(0 Cycle)
090211 6
Al2O3 = 6 nm
Si3N4 60 nm
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Magnetic field confined metallic particle polariztion
bull Metallic polarizability by Lindhard
bull εm＝ 1+(4π e2NL3) Σ∣ ＜ n r n∣ ∣ rsquo ＞∣ 2
bull (En ndashEnrsquo)bull Where bull N=dm-3
bull dm=Lm 2a
B
bull Lm=magnetic length=radic2πheB (Gassard et al
bull PRBV57N201998)
Si Oxide
Ta 60nmPtMn 15nm
CoFe 3nm
CoFe 3nmTa
Al
Al
Temporary Structure(0 Cycle)
090211 6
Al2O3 = 6 nm
Si3N4 60 nm
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Si Oxide
Ta 60nmPtMn 15nm
CoFe 3nm
CoFe 3nmTa
Al
Al
Temporary Structure(0 Cycle)
090211 6
Al2O3 = 6 nm
Si3N4 60 nm
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Breakdown VoltageBreakdown Voltage
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
I-VI-V
Voltage (V)
00 02 04 06 08 10 12 14
Cur
rent
(A
)
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
4 data
STD 10-11~10-12
3 Cycle 10-10~10-9
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
9
Pasteurrsquos Quadrant Research can be Applied Practical and BasicAll at the Same
Timebull Use-inspired research ndash increases existing
understanding and creates improved technology
ndash can take existing technology to new levels but it
bull can also improve understanding of fundamental principles -NRC
Pure Pure Basic Basic Research Research (Bohr)(Bohr)
Use-Use-Inspired Inspired Research Research (Pasteur)(Pasteur)
Pure Pure Applied Applied Research Research (Edison)(Edison)
No Yes
Que
st fo
r F
unda
men
tal
Und
erst
andi
ng
Yes
No
Quadrant Model of Scientific Research
Considerations of Use
From Donald Stokes Pasteurrsquos Quadrant
1997
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
10
Silicon Valley vs Silicon Island
The Opportunity-Interdisciplinary
CY Chang NCTU
John Hannesey Stanford
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
ECO-E RESEARCH GROUPbull GREEN ILLUMINATION
120 lmW WW CAN SAVE 120 GW POWER
240 lmW SAVE MORE AND MOREbull NEPrsquos KUROSHIO POWER GENERATIONbull Green High Efficiency Thin Film Solar Cellsbull Post CMOS BEYOND 22nm CHANG-INTEL Tera Hz III-V FET on Si ULSI bull Epilogue
bull GIANT ENERGY STORAGEbull 98uF 1 um2bull CONNECTING MICRO-CELLs ON 1 CM2bull Stacked to 1cm height store 7000 amp-hr
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
ETCHED VOIDS AND INVERSE PARAMIDE
120 ENHANCEMENT AT NORMAL VIEW
85 gain integrated
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Sapphire
Inverted Pyramids
580
(a) SEM image of etched GaN surface The inverted pyramid structures can be seen from the over etched opening holes (b) SEM cross section image of the regrown sample(c) A zoom out view of the inverted pyramid structures at GaN-sapphire interface
(a)
(b)
(c)
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
Sapphire
u-GaN
ITOp-GaN
n-GaN
10 pairs of MQWs
Al mirror
(a) Schematic of IP-LED R-LED has similar structure except a flat GaN-sapphire interface
(b) EL spectra of IP-LED and R-LED in normal direction(c) L-I-V curves of IP-LED and R-LED (d) Far field patterns of IP-LED and R-LED
(a)(b)
(c) (d)
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
(002)
(102)
FIG 2 X-ray diffraction rocking curves for IP-LED and R-LED samples
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
P-GaNMQWs
N-GaN
Sapphire
IP-GaNair
Sapphire
N-GaN
P-GaNMQWs
P-GaNMQWsN-GaNIP-GaNair
Sapphire
Al mirror
P-GaNMQWsN-GaN
Sapphire
Al mirror
Ray tracing simulations (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED (c) and (d) are full chip views Light is effectively coupled out in normal direction for IP-LED
(a) (b)
(c) (d)
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
ETCH OUT GRAIN BOUNDARIES-CRYSTAL
QUALITY-IQE
AIR VOIDS-TOTAL REFLECTIONS-EQE
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Non-polar and Semi-polar GaN
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Quantum Confined Stark Effect (QCSE)
bullNonpolar orientations of the wurtzite GaN-base materials suddenly attracted attention to be used as device growth planes to minimize QCSE
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Quantum Mechanical Transition Rate
Fermirsquos golden rule
Quantum mechanical transition rate W2rarr1 Electron from state I2 ＞ to state l1
＞W2rarr1=2πħ |H rsquo21|ρf
L A Coldren and S W Corzine diode lasers and photonic integrated circuits New York Wiley 1995 p 512
ρf final density of states function
|H rsquo21|=(qA02m0) |MT|2
Transition matrix element |MT|2equiv| ＜ μc|ecirc p|μv ＞ |2 | ＜ F2|F1 ＞ |2
|μc ＞ and |μv ＞ Bloch function of conduction and valence band
|Гe-h |2 = | ＜ F2|F1 ＞ |2
Гe-h overlap ratio of wave function in electron and hole
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Non-polar LED structure
Diamond Mask
lt0001gtsap
lt10-10gtsap
lt11-20gtsap
a-plane sapphire
m-plane n GaNSi
InGaNGaN
P-GaNMg
lt0001gtGaNlt11-20gtGaN
lt10-10gtGaN
CrAu
CrAuITO layer
MQW
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
PL Spectrum at Room Temperature
Note5320nm=266nm Laser x 2
5320
FWHM=100 nm
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
20 22 24 26 28 30 32 34 36 38
0
5000
10000
15000
20000
20 22 24 26 28 30 32 34 36 38
PL Inte
nsi
ty(a
u)
Photon energy(eV)
M571D
PL Spectrum at 13K
FWHM=41arcsec
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
RHEED Pattern
AlN [001] GaN nanorods [001]
Single-crystalline
GaN [001]
Si (111)
GaN 05μm
Diamond 10 μmAlN 30nmGaN nanorods 04μm
Using GaN nanorods as nucleation layer
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Green High Efficiency Thin Film Solar Cells
Fitst Solar CdTe less $095w CIGS 20 efficiencybut no mass
productionand shoortage of In and GaSiSiGeSiC amorphousuCpoly Green cells
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
GREEN CONCEPTAM1
ALL SILICON BASED
LARGE AREA
UNIFORMITY
MATERIAL QUALITY
TOO OPTIMISTIC BUT FEASIBLE
TECHNOLOGICALLY BREAKTHROUGH
In need
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Compete with First Solar
NO CADNIUN
ALL SILICON
OR
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
CAN WE ACHIEVELESS 1 $ PER WATT
LARGE AREA
HIGH EFFICIENCY
UNIFORMITY
BREAK-THROUGH
NEEDED
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
EXTERNAL AND INTERNAL EFFICIENCY
ARC
TEXTURED
WITH INTERNAL EFFICIECY
CONSIDERED
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
圖三 a-Si及 poly-Si太陽電池之結構
GlassARCTEXTURED
ITOTCO
p+
N-a-Si-layer
AgAl
a-SiH
n-layer (uCpoly-Si)
n+(uCpoly-Si)
a-SiGe
SiN (passivation)
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
μc-Si or poly-SiEg=11eV
μc-Si
a-SiGeEg=14eV ＋ 01 eVn
Ei
Ec
Ev
p+
Π-a-SiEg=17eV
n+n
δ
a-Si
a-SiGe
Eg
13eV
14eV
15eV
~ 10 nm
~ 15 nm
~ 20 nm
δ n
Nc exp(-04eVkT)
Nc exp(-06eVkT)
Nc exp(-05eVkT)
Key recombination velocity
圖五 (a) a-Sia-SiGemicroc-Si 能帶圖 (b)a-SiGe 厚度與能隙的關係
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Ei
Ec
Ev
p+
μc-SiGeEglt11eV
n+n
δ
a-Si
(a)
d1 d2 d3
a-SiGe
反射損失
1 0 1(X) exp( X)
2 1 1 2(X) (d )exp( X)
3 2 2 3(X) (d )exp( X)
d1 d2 d3
0
0
hetrojunction-gain
lightflux
(b)
圖六 (a) a-Sia-SiGemicroc-Simicroc-SiGe 能帶圖 (b) 加入異質接面得到 Gain ( 參考資料 [4] p56)
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
圖四 J-V 圖
a-Si(p+)a-Si(n)poly-Si(n) poly-Si(n+)
2351 095 0763 1704
Dr Letha (a-SiSiGepoly-Si)
n+-na-Sia-SiGen-uC-Sip+
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
圖一成本 vs 太陽電池效率 productivity of 100MW
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
圖二 Cluster System
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
A NEW RESISTIVE RAM NON-VOLATILE MEMORY
HIGH DENSITY
HIGH SPEED
HIGH ENDURANCE
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Process Flow
P-type Si (100) substrate P-type Si (100) substrate
SiOSiO22 Wet oxidation (500nm) Wet oxidation (500nm)
FePt (50nm) FePt (50nm)
SiOSiO2 2 (50nm) was deposited by PECVD (50nm) was deposited by PECVD
and TiN deposited (30nm) by Sputter and TiN deposited (30nm) by Sputter system and pattern TiN sizesystem and pattern TiN size
RCA cleanRCA clean
Via hole 200nm and contact hole Via hole 200nm and contact hole 250nm etching then Ti (80nm) 250nm etching then Ti (80nm)
lithography pattern lithography pattern (100umtimes100um)(100umtimes100um)
SiO2 (500 nm)
TiN (30nm)
Ti (80nm)Ti
FePt (50 nm)
SiO2 (50 nm)
SiO2 (200 nm)
A
B
(a)
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
bullForming Voltage -8V (soft breakdown PE oxide)bullBottom electrode sweep voltage up electrode groundedbull05V read ratio 56026 times 1mA Compliance current
Voltage (V)
-4 -2 0 2 4
Cur
rent
(A)
100x10-12
1x10-9
10x10-9
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
1st2nd3rd10th50th
bull1
bull2 bull3
bull4
(b)
Area 515 um2
Voltage (V)
-3 -2 -1 0 1 2 3
Cur
rent
(A
)
100x10-9
1x10-6
10x10-6
100x10-6
1x10-3
10x10-3
100x10-3
bull1
bull2bull3
bull4
bullAlSiO2Pt structure (after forming)
bullEquivalent circuit of TiTiNSiO2PtFe
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
PCJ Graat MAJ somers Applied Surface Science 100 101 (1996) 36-40
Etching Time (s)
0 50 100 150 200 250 300
Ato
mic
pe
rce
nt
()
0
10
20
30
40
50
60
70
OFeSiPt
SiO2 FePt electrodeTransition
A B
(a)Binding energy (eV)
700710720730740
Inte
rity
16000
16500
17000
17500
18000
18500
19000
Fe (2p32)
Fe2O3 (2p32)
Satellite peaks
(b)
Binding Energy (eV)
704706708710712714
Inte
nsity
(au
)
XPS analysis to transition region
AE Depth Profile and XPS Analysis
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
42
Current Fitting
Slope=1
Slope=1
Ohmic Law
Ohmic Law (Independent to Temperature)
Frenkel-Poole Emission
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
43
Size Effect
Size independent Localization
Electrode area dependent
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
44
Possible Model - Reset Process
EFEv
Ec
EF
Ev
Enhanced n - type
Ec
Fe2O3
Oxygen vacancies (donor)
Fe2O3
Lighted n - type Oxygen vacancies (donor)
EF
e-e- e- e- e- e-
＋ ＋ ＋ ＋ ＋ ＋＋＋ ＋ ＋ ＋ ＋
EF VR
e-Tunneling
e- e- e- e-
VF
Frenkel-Poole Emission
＋＋
＋＋
LocalizationJoule heating
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
PS a lot of conductive filaments domains or anything conductive (After forming in the bulk)
control
It should be noted that the on and off of faucets does not need to occur simultaneously at both interfaces If at least one faucet exits in either of the interfaces the above scenario will hold
D Possible mechanisms for opening and closing of the faucets
1 Electromigration activation energy for diffusion is reduced2 Joule heating (local chemical reaction)
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
46
ndash TCAD simulation ndash
performance evaluation of
short channel GaAs n-MOSFET
with Ge sourcedrainndash 信淵 amp 兆欽 amp 宗佑
2009 04 24
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
47
p-GaAs
Metal
Gate
MetalHfO2 (5nm)
n+-Ge
- Simulated nano-MOSFET device structure ndash
n+-Ge
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
GIANT ENERGY GENERATION 黑潮
TURN 99 IMPORT
TO
ENERGY EXPORT NATION
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
地衡環流 水壓與科氏力的平衡產物
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
copy 2006 Naoto Iwasaka WIDE Project School of Internet httpwwwsoiwideadjpclass20060026slidesl
海表流速大深水處流速遞減
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
Western Intensification
httpsoconnellwebwesleyaneduees106lecture_noteslecture14_106ocean_cir2img003gif
httpoceanmotionorghtmlbackgroundwestern-boundary-currentshtm
大洋西邊由低緯往高緯的水流因科氏力增強而加速風向的改變也推波助瀾
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
台東綠島海底地形圖
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
黑潮流速受海底地形影響綠島與台東之間的「峽口」流速最快
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
EPILOGUEbull POST INDUSTRIAL
REVOLUTION GREEN ECONOMICS
bull GREEN ECONOMY GREEN CULTURE
bull GREEN SCIENCE
bull NET BOOK REVOLUTION VS FINACIAL TSUNAMI NIKKEI BUSSINESS51809
bull ENERGY SAVING AND CO2 REDUCTION SAVE MOTHER EARTH
bull ECO-ENVIRNMENT
