Research & TechnologyResearch & Technology Airborne Systems

www.project-nanoRF.com

NANO RFExploration of the potential of 45nm CMOS for

Analog/RF applications

Afshin ZIAEIThales Research & Technology

2 /2 / General information

Fact & Figures

� Nano-RF: Carbon Based Smart Sysytem For Wirelles Application

� FP7-ICT-2011-8

� Challenge 3 : Alternative Paths to Components and Systems

� ICT-2011.3.1: Very advanced nanoelectronic components : design, engineering, technology and manufacturability

� Industrial Priority: Beyond CMOS technology

� Grant Agreement n°318352

� Total cost: 6 249 k€

� FP7 funding: 4 345 k€

� 577 person-months

� 13 European partners

� 8 countries

� 2 majors, 2 SMEs, 9 academics

� Duration: 36 Months

� www.project-nanorf.com

3 /3 / General information

Consortium

4 /4 / General information

Context

� Nano-RF proposes manufacturable miniaturized devices and module based on CNTs and graphene with enhanced performance for application in communication

� Carbon Nanotube (CNT):

� CNT FET are attractive for PA and LNA in the 2-80 GHz range.

� CNT RF NEMS switches for SPDT : Low actuation voltage, few ns for switching time, high power handling

� CNT based antennas : excellent impedance matching circuit to go from free space to high-impedance devices.

� CNTs as vertical interconnects in 3D integrated systems : higher current carrying capacity, better high temperature stability, and better thermomechanical reliability

� Graphene :

� Graphene FET transistor having performances beyond the state of the art and to use it to fabricate a LNA

� To use the nonlinear electrical properties of graphene to design and fabricate a microwave mixer and a detector

� To use graphene as a substrate for antennas and to fabricate an integrated receiver on graphene at the wafer level

5 /5 / General information

Objectives

� Nano-RF Mission is to develop a new approach for futur generation of T/R modules by using CNT and graphene technlogies leading to a revolutionary new « nano T/R module » working at very high frequenies (up to 80GHZ)

� Objective 1: explore and evaluate Explore and evaluate CNT properties operating in arrays, as solid-state FETs and RF NEMS, in the 2 to 80 GHz frequency range

� Objective 2: Explore and evaluate graphene properties as solid-state FETs, mixers and detectors in the 2 to 80 GHz frequency range

� Objective 3: Develop, calibrate and validate CNT NEMS and CNT FET and graphene FET models for the design of microwave circuits

� Objective 4: Introduce a new class of antennas based on CNTs and graphene

� Objective 5: Demonstrate the concept of NEMS RF to introduce more versatility and increased performance within the future analog RF front-end

� Objective 6: Fabrication of capacitive CNT NEMS switches for power application

� Objective 7: Demonstration of CNT vertical interconnects in 3D integrated systems

� Objective 8: Demonstration of a graphene detector able to demodulated RF signals

� Objective 9: Demonstration of a LNA based on graphene

6 /6 / SoA & Goals

T/R module for active antenna

Core chip Asic

HPA

CirculatorLimiter-LNA

Driver

CORE CHIP

ϕ

ATT LNA

DR HPA

External LNA

1 or 2 Chips

Control ASIC

MEMS SPDT

Antenna

Multilayer Ceramic

We will replace circulator by RF-NEMS SPDTs

and also HPA and LNA by CNT/Graphrene transistor

7 /7 / SoA & Goals

1st demonstrator:Reflect array antennas for wake vortex detection radars and weather radars

The major demonstrators :

CNT FET

CNT RF switch

CNT Antenna

8 /8 / SoA & Goals

2nd demonstrator:Graphene based receiver module

Graphene FET based mixers (Chamers University)

graphene transistor

Graphene detectors

9 /9 / Highlights & Achievements

WP organisation

10 /10 / Highlights & Achievements

System architecture

� Review of potential application

� Identification of the potential application

� Specification of the operationg frequency, bandwidth have

been specified for each application

� Identification of T/R modules specifications

� Idendification of CNT interconnect specification

� Dimension, electrical conductivity, HF performances,

Reliability

� Demonstrator specifications

� Measurement method have been defined

� Definition of the test benches and meseaurement

techniques to fully characterise the demonstrators

CNTs bundles

11 /11 / Highlights & Achievements

Design activities

� Design of CNT FET (for LNA, PA and mixer)

� Design CNT RF switch

� First design and simulation of the CNT

� First design and simulation graphene antenna60GHz

CNT antenna

Graphene antenna

12 /12 /Highlights & Achievements

Fabrication activities

� Devellopement of various recipes for CNTs growth

� Optimization of the horizontally CNTs growth for CNT FET

� Synthesis of graphene by CVD, SiC decomposition and

exfoliated

� Raman Measurement for comparison between graphene

availaible on the project

� Graphene FET fabrication and first DC I-V measurements

Single-walled semiconductive

CNT growth for FET fabricationv

100 nm

[a]Exfloliated graphene

CVD graphene

Raman Measurement

Graphene FET

DC I-V characteristics

13 /13 /Conclusion

System architecture� Review of potential application

� Identification of T/R modules specifications

� Idendification of CNT interconnect specification

� Demonstrator specifications

Design activities� Design of CNT FET (for LNA, PA and mixer)

� Design CNT RF switch

� First design and simulation of the CNT

� First design and simulation graphene antenna

Fabrication activities� Developement of various recipes for CNTs growth

� Optimization of the horizontally CNTs growth for CNT FET

� Synthesis of graphene by CVD, SiC decomposition and

exfoliated

� Raman Measurement for comparison between graphene

availaible on the project

� Graphene FET fabrication and first DC I-V measurements