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Polar3 TM Power MOSFETs April 2012 NEW PRODUCT BRIEF Next Generaon Of Energy-efficient And Reliable Power-switching Soluons OVERVIEW The Polar3 TM Power MOSFET family is the latest addion to IXYS’ benchmark high-performance Polar-Series Power MOSFET product line. These new devices are manufactured using IXYS’ proprietary Polar3 TM Technology Plaorm, yielding new and improved devices that feature an opmized combina- on of low on-state resistance (R dson ) and gate charge (Q g ). The end result is a device that achieves a Figure of Merit (FOM) performance index (device on-resistance mulplied by gate charge) as low as 9.6 ΩnC. Addional device features include low thermal resistances (R thJC ), dynamic dV/dt rangs, high power dissipaon (P d ), and high avalanche energy capabilies. These outstanding electrical and thermal device characteriscs are essenal for implemenng improved power efficiency and reliability in today’s demanding high-voltage conversion systems. The featured Polar3 TM family is inially available in two voltage grades; 500V and 600V grade respecvely. 500V Polar3 TM offerings will include drain current (I d @ Tc=25ºC) rangs of 8Amperes to 132Amperes. Conversely, 600V Polar3 TM offerings will have drain current (I d @ Tc=25ºC) rangs of 4Amperes to 110 Amperes. These devices feature low on-resistances (as low as 39mΩ) while delivering low gate charge values (as low as 6.9nC). The combined low conducon and switching losses resulted in a significant reducon in the overall power consumpon of the device. In comparison to previous Polar-Series generaons (PolarP2 HiPerFET TM ), these new Polar3 HiPerFETs demonstrate up to a 12 percent reducon in on-state resistance (R dson ), 14 percent reducon in gate charge (Q g ) and as high as 20 percent increase in maximum power dissipaon (P d ). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. High speed switching applicaons such as switch mode power supplies (SMPS) and uninterrupble power supplies (UPS) will greatly benefit from the low total gate charge and gate drain charge (Q g =6.9nC, Q gd =2.8nC, V gs @10V) characteriscs of these devices. The low total gate charge and gate drain charge characterisc allows designers the ability to boost power conversion efficiency through the use of high-speed switching and to promote the use of smaller passive components, thus freeing up addional PCB real-estate and reducing the cost of bulky passive components. In addional, the low total gate charge reduces the amount of gate drive power requirement (Gate Drive Power = Q G x V GS x F SW ) needed for the Power MOSFET to fully conduct. Since these devices require less gate drive power, simple economical gate drive soluons can be implemented, further reducing cost and complexity. Power switching capabilies and device ruggedness of these devices are further enhanced through the ulizaon of IXYS’ HiPerFET TM process, yielding a device with a fast intrinsic diode for low reverse recovery charge (Q rr ) and improved turn-off dV/dt immunity. The enhanced dV/dt rangs of these devices offer significant safety margins for the stresses encountered in high-voltage switching applica- ons. Furthermore, these new devices eliminate the need for discrete an-parallel high voltage diodes used in convenonal designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. Other applicaons that will greatly benefit from the superior performance, energy savings, rugged design, and cost-effecveness of these new 3 rd generaon Polar-Series Power MOSFETs include applica- ons such as power factor correcon circuits, motor drives, lamp ballasts, laser drivers, DC-DC convert- ers, baery chargers, solar inverters, roboc and servo control. Type P…M TO-220 Overmolded Type A TO-263 Type Y TO-252 Type R ISOPLUS247 Type L ISOPLUS264 Type N SOT 227 Type B PLUS264 Type K TO-264 Type H TO-247 Type X PLUS247 Type Q TO-3P Type P TO-220 Type T TO-268 (D3-Pak) APPLICATIONS Switch Mode Power Supplies Uninterrupble Power Supplies Power Factor Correcon Circuits DC-DC converters Laser Drivers Baery Chargers AC and DC Motor Drives Robocs and Servo Controls Solar Inverters Lamp Ballasts BENEFITS High power density Reduces conducon and switching losses Enables high-speed switching Promotes use of smaller passive components Promotes use of simple economical gate drive soluons Cooler device operaon Enables system miniaturizaon Increased device ruggedness Easy to mount FEATURES Low Rdson Low Qg Dynamic dV/dt rangs Avalanche Rated High power dissipaon (Pd) Low Thermal Resistance (Rthjc) Fast intrinsic recfier Low gate drive power requirements Low package inductance www.ixys.com
