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int e l Micro32 Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred Pollack Intel Fellow Director of Microprocessor Research Labs [email protected] Contributors: Shekhar Borkar, Ronny Ronen
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Page 1: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

intelMicro32Fred Pollack

1

New Microarchitecture Challengesin the Coming Generations ofCMOS Process Technologies

Fred PollackIntel Fellow

Director of Microprocessor Research [email protected]

Contributors: Shekhar Borkar, Ronny Ronen

Page 2: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

intelMicro32Fred Pollack

2

’70 ’73 ’76 ’79 ’82 ’85 ’88 ’91 ’94 '97 2000’70 ’73 ’76 ’79 ’82 ’85 ’88 ’91 ’94 '97 2000

TransistorsTransistorsPer DiePer Die

101088

101077

101066

101055

101044

101033

101022

101011

101000

1K1K4K4K 16K16K

64K64K256K256K

1M1M

16M16M4M4M

64M64M

40044004 8080808080868086

8028680286 i386™i386™i486™i486™ PentiumPentium®®

MemoryMemoryMicroprocessorMicroprocessor

Source: Intel Source: Intel

PentiumPentium® ® IIII

Moore’s Law

PentiumPentium® ® IIIIII

256M256M

PentiumPentium®® Pro Pro

Page 3: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

intelMicro32Fred Pollack

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In the Last 25 YearsLife was EasyDoubling of transistor density every 30 monthsIncreasing die sizes, allowed by

– Increasing Wafer Size– Process technology moving from “black art” to “manufacturing science”

Doubling of transistors every 18 months

And, only constrained by cost & mfg limits

But how efficiently did we use the transistors?

Page 4: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Performance Efficiency of µarchitecturesTech Old µµµµArch mm (linear) New µµµµArch mm (linear) Area

R ti1.0µ1.0µ1.0µ1.0µ===

=

i386C 6.5 i486 11.5 3.1 0.7µ0.7µ0.7µ0.7µ=

==

=

i486C 9.5 Pentium® proc 17 3.2 0.5µ0.5µ0.5µ0.5µ=

==

=

Pentium® proc 12.2 Pentium Pro® proc

17.3 2.1 0.18µ0.18µ0.18µ0.18µ=

==

=

Pentium III® proc

10.3 Next Gen ? 2--3

Implications: (in the same technology) 1. New µµµµArch ~ 2-3X die area of the last µµµµArch 2. Provides 1.5-1.7X integer performance of the last µµµµArch

We are on the Wrong Side of a Square Law

Page 5: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Power EfficiencyPower is proportional to Die-area * Frequency~2X frequency with each process generation

– Normally expect 1.5X from process technology– Less gates per pipeline stage, e.g. due to deeper pipelines– Pushing process technology

Examples– On 0.35µ Pentium® processor at 200MHz vs Pentium II processor at 300Mhz.

Difference due to pipeline depth.– Pentium II processor at 300MHz on .35u vs. Pentium III processor at 600Mhz on

0.25u» Same core µarchitecture» ~50Mhz in speed-path work. The rest was pushing the process technology

Other FactorsDecreasing voltage and capacitance with each new process technologyIncreasing use of circuit & µarch techniques for lower power

�Increasing transistor sizing to push frequency

Page 6: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Trends and expectations

10

100

1,000

10,000

Mhz

Frequency doubles each generation

i386i486

Pentium Pentium Pro

Pentium II

proc

proc

proc

procPentium® III

Frequency increased by ~2X(not 1.5X)Vcc will scale by only ~0.8(not 0.7)Active power will scale by ~0.9(not 0.5)Active power density willincrease by ~30-80%(not stay constant)Leakage power will make iteven worse, and

With Each Process Generation:

Page 7: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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As the technology scales...

7.0,7.0

,7.07.0

7.07.0

===

=×==

CCapTotalCCapFringing

CCapArea

f

a

1. Dimensions reduce 30%, this is good

2. Capacitance on a node reduces by 30%, this is good27.07.07.0 =×=×= YXAreaDie

3. Transistor density (integration) doubles, this is good

GATE

SOURCE

BODY

DRAIN

Xj

ToxD

GATE

SOURCE DRAIN

LeffBODY

7.01

7.07.07.0 =

×=

AreaCap

4. Capacitance per unit area increases 43%, this is not good

7.0,7.0,7.0 ===== oxtLLengthWWidth

Page 8: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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1

10

100

1000

1.5µ1.5µ1.5µ1.5µ 1µ1µ1µ1µ 0.7µ0.7µ0.7µ0.7µ 0.5µ0.5µ0.5µ0.5µ 0.35µ0.35µ0.35µ0.35µ 0.25µ0.25µ0.25µ0.25µ 0.18µ0.18µ0.18µ0.18µ 0.13µ0.13µ0.13µ0.13µ 0.1µ0.1µ0.1µ0.1µ 0.07µ0.07µ0.07µ0.07µ

Wat

ts/c

m2

i386i486

Pentium ® processor

Pentium Pro ® processor

Pentium II ® processor Pentium III ® processor

Power density continues to get worse

Surpassed hot-plate power density in 0.5µµµµ

Not too long to reach nuclear reactor

Hot plate

Nuclear ReactorRocketNozzleSun’s

Surface

Page 9: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Some implicationsWe can’t build microprocessors with everincreasing die sizesThe constraint is power – not manufacturabilityGiven the trends:

– What happens to power if we hold die size constant at each generation– What happens to die size, if we hold power constant at each generation

Page 10: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Constant die size(Allows ~100% growth in transistors each generation)

0

50

100

150

200

250

0.25µ0.25µ0.25µ0.25µ 0.18µ0.18µ0.18µ0.18µ 0.13µ0.13µ0.13µ0.13µ 0.1µ0.1µ0.1µ0.1µ

Wat

ts

0

25

50

75

100

Pow

er D

ensi

ty (W

/cm

2 )Lkg Pwr

Active PwrPower Density

~15mm die1.5X freq increase each generation

Limiters: 1. Power dissipation, 2. Power delivery, and 3. Power density

Limiters: 1. Power dissipation, 2. Power delivery, and 3. Power density

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Die size has to reduce ~25% in area each generation– Implies ~50% vs. the 200+% historical growth in transistors

Limits performancePower density does not improve

Die size has to reduce ~25% in area each generation– Implies ~50% vs. the 200+% historical growth in transistors

Limits performancePower density does not improve

If you limit die size due to power...

0

4

8

12

16

0.25µ0.25µ0.25µ0.25µ 0.18µ0.18µ0.18µ0.18µ 0.13µ0.13µ0.13µ0.13µ 0.1µ0.1µ0.1µ0.1µ

Die

size

(mm

)

0

25

50

75

100

Pow

er D

ensi

ty (W

/cm

2 )Die sizePower Density

~66 Watts total,1.5X freq increase each generation

Page 12: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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ThereforeBusiness-as-usual won’t workWe need to look at alternatives – and we all are

Page 13: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Current DirectionsLow-power circuit and µarch techniques*SIMD ISA extensions*On-die L2 cachesMultiple CPU cores on dieMultithreaded CPU On-Die L2 Caches

* Not discussed

Page 14: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Memory is more power efficient

Static memory has 10X loweractive power densityLower leakage than logicLeakage control is also easierto implement than logicIntegrated L2 provides:1. Higher bandwidth2. Lower latency

So on-die L2 caches makesense

1

10

100

0.25µ0.25µ0.25µ0.25µ 0.18µ0.18µ0.18µ0.18µ 0.13µ0.13µ0.13µ0.13µ 0.1µ0.1µ0.1µ0.1µ

Pow

er D

ensi

ty (W

atts

/cm

2 )

LogicMemory

Page 15: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Can easily double the on-die L2 ...

256KB

512KB1MB

2MB

0

4

8

12

16

20

0.25µ0.25µ0.25µ0.25µ 0.18µ0.18µ0.18µ0.18µ 0.13µ0.13µ0.13µ0.13µ 0.1µ0.1µ0.1µ0.1µ

Die

size

(mm

)

0

25

50

75

Pow

er D

ensi

ty (W

/cm

2 )

Logic Die Size Total Die sizePower Density Mem Area %

66 Watts constant,1.5X freq increase each generation

Die space not used for logic can be used for on-die L2 cache– To improve performance with <10% increase in max power

>512KB L2 good for server performance, but small impact on PCdesktop performanceAnd little help in “real” power density

Page 16: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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AdvancedAdvancedTransferTransferCacheCache

AdvancedAdvancedSystemSystem

BufferingBuffering

Example: Pentium® III processoron .18µ process technology

• 256KB L2• 28 million

transistors• 106 mm² die

size• Multi-voltage

capability:1.1V-1.7V

• On-die GTL+termination

Page 17: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Advanced System BufferingBalanced increase in buffers to

minimize bottlenecks– Buffer sizes maximize utilization of the

133MHz system bus bandwidth

6 Fill buffers (vs 4)– 50% increase in concurrent non-blocking

data cache operations

8 Bus queue entries (vs 4)– Allows more outstanding memory/bus

operations

4 Writeback buffers (vs 1)– Reduced blocking during cache

replacement operations– Faster deallocation time for fill buffers

Memory BandwidthPrefetch

679

1010

MB

/sM

B/s

0.180.18µµPentiumPentium®® III IIIprocessorprocessor

0.250.25µµPentiumPentium®® III IIIprocessorprocessor

0.180.18µµ Pentium Pentium®® III processor 600 MHz (with ATC, ASB) vs. 0.25 III processor 600 MHz (with ATC, ASB) vs. 0.25µµ Pentium III processor 600 MHz Pentium III processor 600 MHzSystem configuration:System configuration: Pre-production Intel VC820 board with 133 MHz system bus, 128MB RDRAM, SeagatePre-production Intel VC820 board with 133 MHz system bus, 128MB RDRAM, SeagateBarracuda SCSI, STB4400 Velocity AGP 2X. Intel internal design analysis tools used to obtain measurement data.Barracuda SCSI, STB4400 Velocity AGP 2X. Intel internal design analysis tools used to obtain measurement data.

Page 18: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Advanced Transfer CacheSize

– 256KB on-die level 2 cache

Organization– 8-way set associative, 1024 sets– 32 byte line (32 bytes data, 4 bytes

ECC)– 36-bit physical address space

Cache Bus– Full speed, scaleable with core

frequency– 288-bit transfer width (256 data, 32

ECC)– 2 cycle back-to-back throughput– >4x reduction in latency (as compared

to 0.25µ Pentium® III processor)

0.180.18µµ Pentium III processor 600 MHz (with ATC, ASB) vs. 0.25 Pentium III processor 600 MHz (with ATC, ASB) vs. 0.25µµ Pentium III processor 600B MHz Pentium III processor 600B MHzSource: Intel MAP; Results estimated using Intel C/C++ Compiler 4.5 and Intel Fortran Compiler 4.5Source: Intel MAP; Results estimated using Intel C/C++ Compiler 4.5 and Intel Fortran Compiler 4.5System configuration: Pre-production Intel VC820 board with 133 MHz system bus, 256MB RDRAM,System configuration: Pre-production Intel VC820 board with 133 MHz system bus, 256MB RDRAM,IBM371800 ATA-66, Diamond Viper 770 Ultra TNT2 AGP4XIBM371800 ATA-66, Diamond Viper 770 Ultra TNT2 AGP4X

12%

20%

SPECint_base95 SPECfp_base95%

Impr

ovem

ent

% Im

prov

emen

t

Performance Gainat Equal MHz (600MHz)

Page 19: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Power Density: Cache vs. Logic

As die temperature increases, CMOS logic slows downWith low power density (past), can assume uniformityWith increasing power density and on-die L2 cache, need toconsider simplistic non-uniformity

X1 X3 X5 X7 X9

X11

X13

X15

X17

X19

Y1

Y4

Y7

Y10

Y13

Y16Y19

0

10

20

30

40

50

60

X1 X4 X7

X10

X13

X16

X19 Y1

Y4

Y7

Y10Y13

Y16Y19

0

10

20

30

40

50

60

Past: Thermal Uniformity Present: Logic vs. Cache

Page 20: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Power Density: The Future

With high power density, cannot assume uniformity– As die temperature increases, CMOS logic slows down– At high die temperatures, long-term reliability can be compromised

Silicon is not a good heat conductor– Impact on packaging, w.r.t. cooling

0

50

100

150

200

250

Heat

Flu

x (W

/cm

2)

40

50

60

70

80

90

100

110

Tem

pera

ture

(C)

Power Map On-Die Temperature

Page 21: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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☛ Power removal for non-uniform heating is a big challenge since we need to☞ spread the heat (smooth local concentrations) &☞ then dissipate it in the ambient☞ Hot spots created on die since we cannot completely smooth them away

Need to spread out local concentrationsSpreader

Die Attach

Packaging Implications

Page 22: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Multiple CPU on DieShared L2 more efficient thanseparate L2’s of ½ sizeAbout linear performance withdie size vs. historical squarelawUnlikely that both CPUs are atMax Power at same time

– Typical application power << maxpower on each CPU

– Can throttle performance if bothCPUs approach max power at sametime.

Can simplify interconnect inSMP systemAlso, can be used to buildhighly reliable system via FRC

CPU CPU

L2 Cache

Page 23: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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MultithreadingSingle CPU µArch augmented to look as 2 ormore CPUs to software

Adds ~10% logic to CPU

Max Power increases <10%

Can increase throughput by 30+%

Helps to address increasing overhead of cachemisses

Page 24: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Key Challenges for future MicroarchitecturesSpecial Purpose Performance

Increased Execution Efficiency

Breaking the Dataflow Barrier– With efficiency

Page 25: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Special vs. General Purpose Performance

Special purpose performance can deliver moreMIPS/mm².To Date: SIMD integer and floating-point instructionsadded to several ISAs

– <10% in die area and power increase, and 1.5-4x increase in multimedia/3Dkernels

With future silicon budgets approaching 100Mtransistors, we need to consider:

– Integration of other platform components (e.g. Memory controller, graphics)– Special purpose logic, programmable logic, & separately programmable

engines– But all have very complex/costly software issues

Challenge: Design for “Valued Performance”

Page 26: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Increased Execution EfficiencyMax Power Occurs on Code that Keeps Pipeline fulland all superscalar units busy

– Thermal solution designed for Max Power– Power delivery designed for Max Power

But few apps spend any significant time operatingat Max PowerAnd the wider and deeper the execution core, thegreater the inefficiencyThus, with power constraints, need to focus ontechniques that increase execution core efficiencyand only add modest additional logic and power

Page 27: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Challenges to Increased EfficiencyImproved prediction for less unused speculationEstablish & use Confidence measures

– For example, don’t speculate on a flaky branch if another thread canbetter use the execution resources

Page 28: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Data Flow ExecutionIn Order Processors

1. How much limited?2. Can we break the Data Flow Barrier?

1. How much limited?2. Can we break the Data Flow Barrier?

11 3322 44

Our Wet Dreams?Our Wet Dreams?

… But still limited by instruction dependencies

B = AD = CB = AD = C

SourceSource

R1 AB R1R2 CD R2

R1 AB R1R2 CD R2

ScalarScalar

11

33

22

44

R1 AB R1D R2

R1 AB R1D R2

---R2 C

---

---R2 C

---SuperscalarSuperscalar

11

3322

44

R1 AB R1R1 AB R1

R2 CD R2R2 CD R2

Out-of-Order Out-of-Order SuperscalarSuperscalar

------------

11 33

22 44

Out-of-Order Processors– Order is not important,

data flow (dependencies) matters

The Goal: Shortest length as possible!

Page 29: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Breaking the Barrier:Beyond Data-Flow Execution

Driving Idea:–Transform the DFG into an improved DFG which:

» Has a shorter critical path (higher parallelism)» Has less instructions

Families of Transformations–Safe transformations

»» Like compilers do, but using dynamic informationLike compilers do, but using dynamic information–Speculative transformations

»» Guess intermediate values (results, addresses, flags,…)Guess intermediate values (results, addresses, flags,…)»» Ignore dependenciesIgnore dependencies»» Verify and redo if wrongVerify and redo if wrong»» Do it smart to reduce unused speculation (use confidence factor)Do it smart to reduce unused speculation (use confidence factor)

Page 30: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Simple Transformation ExamplesMove Elimination & Memory Bypass

11

33

22

44

11

33

22

44

X

33

22 44

R1 = R2 move[M1] = R1 store

…R3 = [M2] loadR4 = R3+1 alu

R1 = R2 move[M1] = R1 store

…R3 = [M2] loadR4 = R3+1 alu

Source - before & after OOOSource - before & after OOO

[M1] = R2R3 = [M2]

R4 = R3 + 1

[M1] = R2R2R3 = [M2]

R4 = R3 + 1

R1 = R2......

R1 = R2......

After Move Elimination (use R2 for R1)After Move Elimination (use R2 for R1)

SafeTransformation

PredictM1==M2

[M1] = R2R3 = [M2][M1] = R2R3 = [M2]

R4 = R2 + 1...

R4 = R2R2 + 1...

After Memory BypassAfter Memory BypassNeedVerification

M1==M2

Page 31: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Value PredictionPredict the outcome value of an instruction instead of waitingfor it to be ready/produced

– But confidence factor is key to avoiding unused speculation

Enables Dependency Elimination thus collapsing the DFG

11

33

22

11 33

22

Don’t wait for the outcome of “2” in order to execute “3”

but predict it’s value

Page 32: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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Value Identity PredictorIf you can’t predict the actual value, try to predict if it isidentical to a value produced by a prior instructionEnables Dependency Redirection thus collapsing the DFG

Gen eax …Gen ebx…Use ebx Before

After

But with confidence

Page 33: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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SummaryLogic Transistor growth constrained by power – not mfg

– At constant power, 50% per process generation vs. over 200% in past

Current Directions in microarchitecture that help– SIMD ISA extensions– On-die L2 caches– Multiple CPU cores on die– Multithreaded CPU

Key Challenges for future Microarchitectures– Special purpose performance– Increased execution efficiency: improved prediction and confidence– Break the data-flow barrier, but in a power efficient manner

CMOS Challenges beyond thermal power– Increasing power density– Leakage Power becoming a significant factor– Increasing and quickly-changing current with lower voltage (di/dt)– SER (soft error rate) – not just a memory problem

Page 34: Fred Pollack Micro32research.ac.upc.edu/HPCseminar/SEM9900/Pollack1.pdf · Fred Pollack 1 New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies Fred

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ConclusionPower is the key challenge

– Need to address at all levels (process, circuits, architecture, compiler)– And, use multi-disciplinary approach

New Goal:

Double Valued Performance every 18 months, at the same power level


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