RICH
200
4, P
laya
del
Car
men
, Mex
ico,
Dec
embe
r 1s
t , 20
041
The
The
BTeV
BTeV
RICH
RICH
fron
t en
d el
ectr
onic
sfr
ont
end
elec
tron
ics
Mar
ina
Art
uso
For
the
RICH
Gro
upM
. Art
uso,
S. B
lusk
, C. B
oula
houa
che,
J. B
utt,
O
. Dor
jkha
idav
, A. K
anan
, N. M
enaa
,R.
Mou
ntai
n, H
. Mur
amat
su, R
. Nan
daku
mar
,
L.
Red
jimi,
K. R
andr
iana
rivo
ny,T
. Skw
arni
cki,
S.
Sto
ne, R
. Sia
, J. W
ang,
H. Z
hang
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
2
Intr
oduc
tion
and
ove
rvie
wIn
trod
ucti
on a
nd o
verv
iew
BTeV
is a
n ex
peri
men
t ge
ared
tow
ards
the
ex
plor
atio
n of
new
phy
sics
man
ifes
ting
itse
lf in
ch
arm
and
bea
uty
deca
ysPa
rtic
le id
enti
fica
tion
sys
tem
is a
key
ele
men
t in
m
oder
n ex
peri
men
ts s
tudy
ing
heav
y fl
avor
san
d Ri
ng I
mag
ing
Cher
enko
v (R
ICH
) det
ecto
rs a
re a
n op
tim
al a
ppro
ach
to a
chie
ve t
he d
esir
ed p
arti
cle
sepa
rati
on (m
ore
in T
. Sk
warn
icki’s
talk
)A
fro
nt e
nd e
lect
roni
cs w
ell m
atch
ed t
o th
e ex
peri
men
tal r
equi
rem
ents
(rat
e/oc
cupa
ncy…
) and
th
e ch
osen
pho
ton
dete
ctor
sis
a k
ey e
lem
ent
in a
su
cces
sful
impl
emen
tati
on in
any
RIC
H d
etec
tor.
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
3
The
BTeV
RIC
H D
etec
tor
The
BTeV
RIC
H D
etec
tor
Mirr
or F
ocus
ed G
as R
adia
tor R
ICH
Pro
xim
ity F
ocus
ed L
iqui
d R
adia
torR
ICH
Gas
R
adia
tor
C4F
8O
Liqu
id
Rad
iato
rC
5F12
γsγs
MA
PM
Ts(H
PD
s)
Mirr
orA
rray
beam
pipe
PM
Ts
+particle Li
quid
ra
diat
or=
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
4
Phot
on d
etec
tor
fron
t en
d A
SIC
Phot
on d
etec
tor
fron
t en
d A
SIC
FRO
NT
END
ASI
C m
ust
Noi
se m
atch
ed t
o th
e dy
nam
ic
rang
e of
the
sig
nal t
o be
de
tect
ed:
•Lo
w no
ise
for
HPD
ap
plic
atio
ns (≤
500
e-)
•M
oder
ate
nois
e (1
000-
2000
e-
) for
MaP
MT
and
HPD
ap
plic
atio
nsD
ynam
ic r
ange
sui
tabl
e fo
r th
e sp
ecif
ic a
pplic
atio
n:•
HPD
sig
nal 5
,000
e-
•PM
T m
ediu
m d
ynam
ic r
ange
(∼
105 )
•PM
T m
ediu
m d
ynam
ic r
ange
(∼
106 )
On
chip
spa
rsif
icat
ion
Dat
a pu
sh a
rchi
tect
ure
Para
llel d
igit
al r
eado
ut t
o al
low
tim
e st
ampi
ng w
ith
beam
cr
ossi
ng n
umbe
r
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
5
ASI
C Fu
ncti
onal
Des
crip
tion
A
SIC
Func
tion
al D
escr
ipti
on
Logi
cal s
igna
l cu
rren
t ou
tput
to
min
imiz
e an
alog
/dig
ital
co
uplin
g
Idea
sASA
Ver
itasv
eien
9B
ox31
5N-
1323
H
vik
Nor
way
Func
tiona
l des
crip
tion
VFP
V
FS
In
Thre
shol
d
OS
OC
OT
VFG
OG
Mux
G_o
n
Mux
Neg
_thr
OM
Mon
o-st
able
trigW
bi
vrc
Gain
sta
ge
Prea
mp
shap
er
T_ou
t
ff
Dis
able
ch
anne
l
Test_
on2
DAC
±?i
400O
Fig
5. V
A64
Tap2
Cha
nnel
Arc
hite
ctur
e. T
he g
ain
stag
e w
ill b
e re
mov
ed.
The
Va6
4Tap
cha
nnel
is sh
own
in th
e fig
ure
abov
e. A
fter t
he p
ream
plifi
er, t
he si
gnal
path
is sp
lit in
two.
D
epen
ding
on
the
setti
ng o
f the
glo
bal c
ontro
l bit
ì g_onî
, the
inpu
t of t
he sh
aper
is c
onne
cted
to e
ither
Ana
log
fron
t en
d; C
SA a
nd
shap
er
Dis
crim
inat
or w
ith
prog
ram
mab
le t
hres
hold
Logi
cal
peri
pher
y –
mon
osta
ble
circ
uit
Idea
s A
SA, O
slo,
NO
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
6
Som
e ke
y te
chno
logy
par
amet
ers
Som
e ke
y te
chno
logy
par
amet
ers M
igra
ting
to
0.35
µm
CM
OS
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
7
Brie
f hi
stor
y of
R&D
wor
kBr
ief
hist
ory
of R
&D w
ork
PRO
TOTY
PIN
G ST
EPS:
VA_B
TeV1
[ fo
r H
PD r
eado
ut: l
ow n
oise
(500
e-EN
C),
disc
rim
inat
or n
ot o
ptim
ized
for
hig
h co
unti
ng r
ates
] &
Va+B
TeV1
.1 [im
prov
ed d
iscr
imin
ator
and
1 a
nalo
g te
st
chan
nel]
VA_M
aPM
T [f
or M
APM
T, im
prov
ed d
iscr
imin
ator
, 1
anal
og t
est
chan
nel]
In p
rogr
ess:
opt
imiz
atio
n of
dyn
amic
ran
ge f
or M
aPM
T ap
plic
atio
ns a
nd o
f no
ise
vers
us C
in fo
r PM
T ap
plic
atio
nsTh
ese
devi
ces
are
base
d on
the
dat
a dr
iven
ASI
Cs
deve
lope
d fo
r x-
ray
appl
icat
ions
(VA
TAP)
.
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
8
VAVA-- B
TeV
Fron
tBT
eV F
ront
-- end
Hyb
rids
end
Hyb
rids
16 b
oard
cha
ract
eriz
ed in
sta
ndal
one
elec
tron
ics
test
be
nch
and
with
ligh
t so
urce
(blu
e LE
D) a
ttac
hed
to
BTeV
HPD
Flex
par
t to
mak
e 90
0an
gle
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
9
HPD
Rea
dout
Elect
ronics
tes
tsHPD
Rea
dout
Elect
ronics
tes
ts~5
00 e
-no
ise
leve
l be
achi
eved
Read
out
is b
inar
y (O
N o
r O
FF)
2nd
iter
atio
n: 1
ana
log
test
cha
nnel
for
di
agno
stic
pur
pose
s
Rea
dout
Boa
rd
VA
_BT
eVch
ipEN
C =3
00 e
lect
rons
Ligh
t in
tens
ity
1 ph
oton
on
ave
rage
(Poi
sson
di
stri
buti
on)
Opt
ical
fib
er
Elec
tron
ics
resp
onse
to
light
inje
cted
on
a si
ngle
pi
xel
HPD
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
10
The
VA_P
MT1
ASI
C an
d H
ybri
dTh
e VA
_PM
T1 A
SIC
and
Hyb
rid
Dev
elop
ed f
or t
he M
aPM
T te
st b
eam
run
N
ew A
SIC
has
high
er
dyna
mic
ran
ge (t
uned
for
m
ost
prob
able
val
ue 1
06e-
and
rela
tive
ly lo
ng t
ail
belo
w th
is c
harg
e)H
ybri
d c
hip
carr
ier
impl
emen
ted
on s
tand
ard
PC b
oard
.
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
11
Char
acte
riza
tion
in t
he la
bCh
arac
teri
zati
on in
the
lab
00.20.40.60.81 0.080.08
20.08
40.08
60.08
80.09
ENC
= 20
00 e
-
Opt
ical
Fib
er
Curr
ent
turn
ed d
own
to
have
a m
ean
light
inte
nsit
y of
a s
ingl
e ph
oton
(pho
ton
coun
ting
)
Chan
nel
rece
ivin
g lig
ht
resp
onds
at
the
expe
cted
le
vel
Thre
shol
d sc
an e
stab
lishe
d ex
pect
ed n
oise
per
form
ance
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
12
CC 44FF 88
O r
adia
tor
test
bea
m s
tudi
esO
rad
iato
r te
st b
eam
stu
dies
All
52 M
APM
Ts d
eplo
yed
and
read
out
wit
h pr
otot
ype
fron
t en
d el
ectr
onic
s de
sign
ed f
or o
ur
appl
icat
ions
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
13
The
mea
sure
d Ch
eren
kov
ring
data
MC
MC
pred
icti
ons
in a
gree
men
t wi
th t
he d
ata
Mor
e co
mpl
ete
desc
ript
ion
in T
. Skw
arni
cki’s
con
trib
utio
n
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
14
MaP
MT
gain
tun
ing
MaP
MT
gain
tun
ing
Conj
ectu
re: c
ross
tal
k Co
njec
ture
: cro
ss t
alk
indu
ced
by f
ront
end
in
duce
d by
fro
nt e
nd
satu
rati
on
satu
rati
on
New
MaP
MT
volt
age
New
MaP
MT
volt
age
divi
der
to lo
wer
gain
di
vide
r to
lowe
r ga
in
& m
aint
ain
char
ge
& m
aint
ain
char
ge
colle
ctio
n ef
fici
ency
colle
ctio
n ef
fici
ency
R1,
R4:
180
kΩ
R2,
R3:
540
kΩ
R5-
R15
: 180
kΩ
1:3:
4:1:
1:1:
1:1:
1:1:
1:1:
1:1
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
15
cros
s ta
lk s
tudi
es w
ith
2 bi
as s
chem
escr
oss
talk
stu
dies
wit
h 2
bias
sch
emes
Resp
onse
at 70
0V o
n th
e de
faul
t divi
der
010
020
030
040
050
0
12
34
56
78
910
1112
1314
15
Chan
nel #
Response
Seri
Re
spo
nse
at
650V
on
th
e d
efa
ult
rat
iod
ivid
er
050100
150
200
250
300
350
400
450
12
34
56
78
910
1112
1314
15
Ch
an
ne
l #
Response
VOLT
AGE
6 NEAREST NEIGHBOR/HIT PIXEL COUNT RATE
New
vol
tage
div
ider
Plat
eou
plat
eau
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
16
Ana
log
outp
uts
at d
iffe
rent
HVs
Ana
log
outp
uts
at d
iffe
rent
HVs
Def
ault
Div
ider
at 8
00V
, Vth
= 1
17 (-
17.5
mV
)M
odifi
ed D
ivid
er a
t 800
V, V
th=1
17(-
17.5
mV
)
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
17
New
ASI
Cs u
nder
dev
elop
men
tN
ew A
SICs
und
er d
evel
opm
ent
MaP
MT
(opt
imiz
ed f
or d
ynam
ic r
ange
) and
PM
T (o
ptim
ized
fo
r hi
gh in
put
capa
cita
nce)
Sim
ulat
ion
stud
ies:
Dat
a ra
te c
apab
iliti
esFi
lter
ing
prop
erti
esN
oise
ver
sus
inpu
t ca
paci
tanc
e
Tim
e de
velo
pmen
t of
the
sig
nal
50 n
s/d
ivis
ion
shap
er o
utp
ut
hig
h p
ass
filte
r ou
tpu
t
mo
no
stab
le (d
igit
al) o
utp
ut
sin
gle
ch
ann
el re
spo
nse
100K
Hz
1M
Hz
10
MH
z
1
00M
Hz
Ana
log
Fron
t En
d Fr
eque
ncy
Resp
onse
100
ns/d
iv
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
18
Pred
icte
d no
ise
perf
orm
ance
Pred
icte
d no
ise
perf
orm
ance
Equi
vale
nt n
oise
cha
rge
vers
us in
put
capa
cita
nce:
MaP
MT
has
gain
min
imiz
ed
to o
ptim
ize
dyna
mic
ran
ge•
ENC
vers
us in
put
capa
cita
nce
non
linea
r be
caus
e th
ere
is a
co
mpo
nent
fro
m t
he
shap
er.
PMT
opti
miz
ed f
or h
igh
inpu
t ca
paci
tanc
e•
This
ASI
C ha
s sl
ight
ly
high
er p
ower
con
sum
ptio
n to
mai
ntai
n th
e sp
eed
with
the
hig
her
inpu
t ca
paci
tanc
e ex
pect
ed [I
am
ass
umin
g C i
n∼5
0 pF
]
Sim
ulat
ed n
oise
slo
pePM
T2
y =
37.6
43x
+ 59
0.58
0
500
1000
1500
2000
2500
3000
020
4060
Inpu
t Cap
acita
nce
noise (e-)
nois
e vs
. CLi
near
(noi
se v
s. C
)
Sim
ula
ted
no
ise
slo
pe
MaP
MT
22
50
23
00
23
50
24
00
24
50
25
00
25
50
26
00
05
10
15
20
Inp
ut C
apac
itan
ce
noise (e-)
nois
e v
s. C
New
dev
ices
will
be
test
ed in
win
ter
2005
Mar
ina
Art
uso
RICH
2004
Pla
ya d
el C
arm
en M
exic
o D
ecem
ber
1st
2004
19
Conc
ludi
ng r
emar
ksCo
nclu
ding
rem
arks
The
BTeV
RIC
H p
hoto
n de
tect
or e
lect
roni
cs R
&D
effo
rt h
as a
lrea
dy p
rodu
ced
seve
ral v
aria
tion
s of
a
data
dri
ven
driv
en lo
w no
ise
fron
t en
d el
ectr
onic
s, s
uita
ble
for
a va
riet
y of
app
licat
ions
.W
e ha
ve g
aine
d ex
peri
ence
wit
h di
ffer
ent
pack
agin
g op
tion
s [s
tand
ard
PCBs
, mix
ed f
lex-
rigi
d PC
Bs]
Exte
nsiv
e te
sts
in t
he la
bora
tory
+ t
est
beam
run
s ha
ve g
iven
us
the
oper
atio
nal e
xper
ienc
e th
at w
ill
lead
to
a su
cces
sful
sys
tem
inte
grat
ion.
