Public Information

GaN Transistors Are Here

Faster, Smaller, and More Efficient...

Public Information2 04/15/2023

Semiconductor Silicon Silicon Carbide

Gallium Nitride

Characteristic Unit

Bandgap eV 1.1 3.26 3.49

Electron Mobility cm²/Vs 1500 700 2000

Peak Electron Velocity x10⁷ cm/s 1.0 2.0 2.1

Critical Electric Field MV/cm 0.3 3.0 3.0

Thermal Conductivity W/cm·K 1.5 4.5 >1.5

Relative Dielectric Constant

ετ 11.8 10.0 9.0

Why GaN?Excellent Characteristics for a Power Device

• Superior breakdown capability• Higher electron density and speed• Higher operating temperature

Public Information3 04/15/2023

• HEMT = High Electron Mobility Transistor• Conducts through two-dimensional

electron gas• Lateral current conduction

The GaN HEMTWhat is it?

Public Information4 04/15/2023

• Ease of drive– Traditional gate drive voltages can be used– Characteristics set by low voltage transistor

• Gate voltage rating• Threshold voltage• Gate charge (~10x better than super-junction)

• Reliability– Passed JEDEC industrial specifications– Passed long-term application-level testing

600 V GaN Cascode Advantages

Public Information5 04/15/2023

E

Part Rdson (mΩ) Qg @4.5 V (nC)

Co(er) @0 to 480 V (pF)

Qrr (µC)

NTP8G202N 290 6.2 36 0.029

NTP8G206N 150 6.2 56 0.054

First 600 V GaN Products

• Products qualified and released!

• Products at other specifications and in other packages are in development.

Product Specifications

Public Information6 04/15/2023

Parameters

On resistance

(W)Gate charge

(nC)Output

charge (nC)

Energy related Coss

(pF)

Reverse recovery

charge (mC)FOM1A FOM1B FOM2

Symbol Rds, on Qg Qoss Coer Qrr Ron*Qg Ron*Qoss Ron*Qrr

GaN Gen1 0.180 6.2 53 56 0.054 1.1 9.5 0.01

SJ Si GenA 0.199 32 86 69 5.5 6.4 17 1.1

SJ Si GenB 0.190 63 128 56 6.9 11 24 1.3

SJ Si GenC 0.199 20 126 29 6 4.0 25 1.2

Low Qrr SJ 0.190 95 77 83 1 18 15 0.19

1st Gen 600V GaN-on-Si HEMT Compared to HV MOSFET

4xBetter Better Similar

>20xBetter

For similar on-resistance,GaN’s performance is:

• 1st generation GaN is already superior to silicon

• GaN still has ample potential to improve

Public Information7 04/15/2023

• Efficient power conversion favors soft switching circuit topologies that recover energy.– Phase-Shifted Full-Bridge– Half-Bridge or FB LLC– Synchronous Boost– Others

• GaN offers perfectly suited performance to accelerate this trend.

GaN ApplicationsIdeal Fit for Efficient Circuit Topologies

Public Information8 04/15/2023

• Drive and power loop inductances - Minimize component spacing

• Surge protection devices must be used• Ensure thermal performance by

appropriate heat sinking• Parallelization can be done by matching

gate drive and power loop impedances• Separate grounds for power and signal

components, connected at a single point

System Development for GaNCritical Factors

Public Information9 04/15/2023

• Traditional CCM Boost Circuit vs Totem Pole Circuit

• GaN transistors enable more efficient topology

Power Factor Correction

230 Vac Input 110 Vac Input

Efficiency Impovementby Topology Change

Public Information10 04/15/2023

• Benefits from GaN at higher frequency – Increased power density– Reduced system size and weight

• System cost parity with better performance

• Component cost will reduce with volume to become lowest cost wide band gap technology

Advantages of GaN

Public Information11 04/15/2023

• GaN Transistors – ON Semiconductor and Transphorm collaborating to enable adoption in power systems

• Packaging – Advanced packaging technology to combine with characteristics of more ideal switches

• Drivers – High voltage drivers now, more coming for GaN

• Controllers – Applying strong market presence to GaN

• Reference Designs – Applying system expertise to GaN solutions for customers, not just products

Expertise in GaN Power Electronics...Poised to provide customers a TOTAL GaN solution.