Abhay SHUKLA et al.(IMPMC, UPMC-P6) Massimiliano MARANGOLO et al. (INSP, UPMC-P6)

Sébastien LEBESGUE et al. (CRM2, Nancy)

Graphene and beyond: Other 2D Materials

MoS2

InSe

1L

2L GaSe

2L

1L

3L

2D materials (by anodic bonding) IMPMC

MoS2

O2- Na+

Na2O =>2Na+ + O2-

Layered precursor

MoS2 IMPMC

0 50 100 150 200 250 3000

1

2

T(K)

x

xh

/e2)

n= 5,3 1012/cm2

n= 9,8 1012/cm2

n= 1,5 1013/cm2

-6 -4 -2 0 2 4 6

-20

0

20

40

60

80

100

120

B(T)

R

xx(

)

8K

µ = 80 cm2 V-1 s-1

Weak

Localization

Semiconductor-metal transition Compression-shear modes:

ultra low energy

Devices, Heterostructures IMPMC

InSe

Graphene

Graphene Few layer InSe

Drain Cr/Au Source Cr/Au

SiO2/Si

Gate Vg

Vds

Historique d’activité

Mauri et al. IMPMC

Théorie ab-intio

M. Calandra, ce matin

Shukla et al. IMPMC

Graphène, dichalcogenures, semiconducteurs II-VI

Fabrication, Raman,

(magneto)transport, dispositifs simples

Marangolo et al. INSP

Isolants topologiques (MBE)

Spectroscopies synchrotron

Ouerghi et al. LPN

SiC Graphène, fonctionnalisation

Spectroscopie synchrotron

ANR en cours, collaborations,

publications

Boutchich et al. LGEP

Dispositifs, Photovoltaique

Topological insulators INSP

18 QL

1mm

__________

1_QL

-0.2 0.0 0.2

-0.9

-0.6

-0.3

0.0

E-

EF (

eV)

K / /

(Å-1)

3_QL

-0.2 0.0 0.2

K / /

(Å-1)

9_QL

-0.2 0.0 0.2

K / /

(Å-1)

MBE grown state-

of the art Bi2Se3

Thickness

dependent gap

Topological insulators INSP

Fe doping: dilute

Dirac cones stable with Fe doping

Probable dilution in thin films

Collab. THALES, ELETTRA, LPEM, LPS

Graphene and other materials: C2RM Nancy

Graphene and other materials: C2RM Nancy

Other materials: closer look at MoS2

Ye et al. Science (2012)

Doping,

superconductivity

Properties, devices

Eda et al.Nanoletters (2012)

Radisavjlevic et

al.NatureNano (2011)

Spin Hall, Valley Hall

Xiao et al. PRL (2012)

Mak et al. Nature Nano (2012)

Why go beyond Graphene?

• New domain of 2D materials, more difficult than graphene but much larger field

Fundamental Physics

- Phase transitions with electrostatic doping

- Quantum effects: Localization, Conductance fluctuations

- Topologically protected states

- New phenomena: spin-Hall, valley Hall effects;

Applied Physics

- Use above phenomena for new devices

- Combine properties of different 2D materials for more efficient devices