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We take great pleasure in welcoming you to Madrid (Spain) for the workshop
“Graphene for Future Emerging Technologies: Challenges and Opportunities”.
This workshop aims to present the current state of the art and the opportunities of
graphene-based materials/devices and related structures for future emerging
technologies in the field of Information and Communication Technologies (ICT). Focus
will be made on identifying the directions of promising innovation and disruptive
technologies, including flexible electronics and transparent conductors, high frequency
devices, digital logic, spintronics, nanoelectromechanical devices, ultimate sensors and
bio-related applications. Challenges in the fields of ultimate microelectronics, energy
dissipation and thermal management, advanced composites for aeronautics, and large
scale graphene production and device integration will be discussed.
We are indebted to the following Scientific Institutions, Companies, Projects and
Government Agencies for their financial support: Graphene Flagship Pilot Action,
NOKIA, 7th Framework Program / European Commission, nanoICT coordination action,
Future Emerging Technologies (FET) Program, Commissariat à l’Energie Atomique
(CEA), Consejo Superior de Investigaciones Científicas (CSIC), GRAnPH Nanotech,
Acción Complementaria “Graphene” and Graphenea.
We truly hope that this gathering will meet your goals and allow fruitful interactions.
The Organising Committee
Stephan Roche (ICN, Spain)
Francisco Guinea (CSIC-ICMM, Spain)
Mar García-Hernández (CSIC-ICMM, Spain)
Antonio Correia (Phantoms Foundation, Spain)
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Sponsors
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Scientific Program (October 18, 2011)
Welcome address
08h45-09h00 Arturo Azcorra [CDTI], Francisco Guinea [CSIC], Stephan Roche [ICN] and
Rafael Rodrigo [CSIC]
Chairman: Stephan Roche [ICN]
9h00-9h15 Introduction to the Graphene Flagship and Industrial two-day event
Jari Kinaret [Graphene Flagship coordinator] [Chalmers Univ., Sweden] p. 25
Opening Session
9h15-9h45 A challenge for European Industries
Tapani Ryhänen [NOKIA, UK] p. 37
9h45-10h00 Vision for the future: Graphene science driven innovation
Vincenzo Palermo [CNR, Italy] p. 33
Chairman: Mar Garcia-Hernandez [ICMM-CSIC]
10h00-10h15 Graphene Technology Platform at BASF
Matthias Schwab [BASF, Germany] p. 39
10h15-10h30
Bulk production of faceted graphene oxide and graphene platelets:
properties and applications
Cesar Merino Sanchez [GRAnPH Nanotech, Spain]
p. 31
10h30-10h45 Graphene and graphene nanocomposites
Julio Gomez [AVANZARE, Spain] p. 21
10h45-11h00 Graphene films synthesized via CVD
Amaia Zurutuza [GRAnPH Nanotech, Spain] p. 49
11h00-11h30 Graphene crystal growth
Luigi Colombo [Texas Instruments, USA] p. 17
11h30-12h00 Coffee break
Chairman: Jari Kinaret [Chalmers University]
12h00-12h30 Graphene and its applications in energy storage devices
Di Wei [NOKIA, UK] p. 47
12h30-13h00 Graphene-based Metrology
Jan Theodoor Janssen [National Physical Laboratory Ltd, UK] p. 23
13h00-13h15 Graphene for flexible Electronics
Andrea Ferrari [University of Cambridge, UK] p. 19
13h15-14h30 Lunch break
Chairman: Jani Kivioja [NOKIA]
14h30-15h00 R2R printing on organic and inorganic materials
Raimo Korhonen [VTT, Finland] p. 29
15h00-15h30 Material Innovation for Aeronautics
Jose-Sánchez Gómez/Tamara Blanco [Airbus, Spain] -
15h30-16h00 Title to be defined
Salvatore Coffa [STMicroelectronics, Italy] -
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Scientific Program (October 18, 2011)
Chairman: Daniel Neumaier [AMO]
16h00-16h30 IBM large scale graphene nanoelectronics technologies for future post CMOS
Chun Yung Sung [IBM, USA] p. 45
16h30-17h00 Samsung's approach to graphene transistor
Hyun-Jong Chung [SAMSUNG, Korea] p. 15
17h00-17h30 Graphene Logic Gates and Nanoribbon Memories
Roman Sordan [Politecnico di Milano, Italy] p. 43
17h30-18h00 Coffee break
Chairman: Paco Guinea [ICMM-CSIC]
18h00-18h20 Graphene Spintronics
Pierre Sénéor [THALES-CNRS, France] p. 41
18h20-18h40 Electromechanical resonators made from graphene
Adrian Bachtold [ICN/CIN2, Spain] p. 11
18h40-19h00 Graphene for Photovoltaics
Francesco Bonaccorso [University of Cambridge, UK] p. 13
19h00-19h20 Graphene for Advanced Photonics & Plasmonics
Frank Koppens [ICFO, Spain] p. 27
19h20-19h40 Venture capital and graphene: Are we at proof of principle or beyond?
Mark Rahn [MTI, UK] p. 35
19h40-20h00 Concluding Remarks
Jani Kivioja [NOKIA, UK] and Stephan Roche [ICN, Spain]
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Abstracts (Alphabetical Order)
page
Adrian Bachtold [ICN/CIN2, Spain]
Electromechanical resonators made from graphene 11
Francesco Bonaccorso [University of Cambridge, UK]
Graphene Photovoltaics 13
Hyun-Jong Chung [SAMSUNG, Korea]
Samsung's approach to graphene transistor 15
Salvatore Coffa [STMicroelectronics, Italy]
Title to be defined -
Luigi Colombo [Texas Instruments, USA]
Graphene crystal growth 17
Andrea Ferrari [University of Cambridge, UK]
Graphene for Flexible Electronics 19
Julio Gomez [AVANZARE, Spain]
Graphene and graphene nanocomposites 21
Jan Theodoor Janssen [National Physical Laboratory Ltd, UK]
Graphene-based Metrology 23
Jari Kinaret [Graphene Flagship coordinator] [Chalmers Univ. of Technology, Sweden]
The Graphene Flagship Initiative 25
Frank Koppens [ICFO, Spain]
Graphene for Advanced Photonics & Plasmonics 27
Raimo Korhonen [VTT, Finland]
R2R printing on organic and inorganic materials 29
Cesar Merino Sanchez [GRAnPH Nanotech, Spain]
Bulk production of faceted graphene oxide and graphene platelets:
properties and applications
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Vincenzo Palermo [CNR, Italy]
Vision for the future: Graphene science driven innovation 33
Mark Rahn [MTI, UK]
Venture capital and graphene: Are we at proof of principle or beyond? 35
Tapani Ryhänen [NOKIA, UK]
A challenge for European Industries 37
Jose Sanchez Gomez/Tamara Blanco [Airbus, Spain]
Material Innovation for Aeronautics -
Matthias Schwab [BASF, Germany]
Graphene Technology Platform at BASF 39
Pierre Sénéor [THALES-CNRS, France]
Graphene Spintronics 41
Roman Sordan [Politecnico di Milano, Italy]
Graphene Logic Gates and Nanoribbon Memories 43
Chun-Yung Sung [IBM, USA]
IBM large scale graphene nanoelectronics technologies for future post CMOS 45
Di Wei [NOKIA, UK]
Graphene and its applications in energy storage devices 47
Amaia Zurutuza [GRAnPH Nanotech, Spain]
Graphene films synthesized via CVD 49
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Electromechanical resonators made from graphene
A. Bachtold
ICN and CIN2, Campus UABarcelona, 08023 Bellaterra, Spain
Graphene offers unique scientific and technological opportunities as
nanoelectromechanical systems (NEMS). Namely, graphene has allowed
the fabrication of mechanical resonators that can be operable at high
frequencies and that have an ultra-high quality factor [1]. In addition,
graphene has exceptional electron transport properties. For instance, the
room-temperature mobility is higher than that of any known
semiconductor. Coupling the mechanical motion to electron transport in
these remarkable materials is thus highly appealing. In this talk, I will
review some of the recent progresses on graphene NEMS resonators. I will
also discuss the possibility to use graphene resonators for future mass
sensing applications.
References
[1] A. Eichler, J. Moser, J. Chaste, M. Zdrojek, I. Wilson-Rae, A.
Bachtold, Nature Nano (2011)
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Graphene Photovoltaics
Francesco Bonaccorso
Engineering Department, Cambridge University, 9 JJ Thomson Avenue,
Cambridge, UK
Graphene has great potential in photonics and optoelectronics, where the
combination of its unique optical and electronic properties can be fully
exploited, the absence of a bandgap can be beneficial, and the linear
dispersion of the Dirac electrons enables ultra-wide-band tenability [1].
The rise of graphene in photonics and optoelectronics is shown by several
recent results, ranging from solar cells and light emitting devices, to touch
screens, photodetectors and ultrafast lasers [1]. Despite being a single
atom thick, graphene can be optically visualized [2]. Its transmittance can
be expressed in terms of the fine structure constant [3]. The linear
dispersion of the Dirac electrons enables broadband applications [4,5,6,7].
Saturable absorption is observed as a consequence of Pauli blocking [7,8].
Chemical and physical treatments enable luminescence [1,9]. Graphene-
polymer composites prepared using wet chemistry [7,8,10] can be
integrated in a fiber laser cavity, to generate ultrafast pulses and enable
broadband tunability [7,8]. Graphene’s suitability for high-speed
photodetection was demonstrated in optical communication links
operating at 10Gbits-1 [5]. By combining graphene with plasmonic
nanostructures, the efficiency of graphene-based photodetectors can be
increased by up to 20 times [11]. Wavelength and polarization selectivity
can be achieved by employing nanostructures of different
geometries [11]. Plasmonic nanostructures can also increase dramatically
the light harvesting properties in solar cells [11]. In the case of solar cells
graphene can fulfill the following functions: as the transparent conductor
window [12], antireflective material [13], photoactive material [14],
channel for charge transport [15], and catalyst [16]. A variety of
configurations have been demonstrated to date, ranging from silicon solar
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cells [13], to organic [14] and dye-sensitized solar cells [12,15,16]. I will
give a thorough overview of the state of the art of graphene-enabled solar
cells, outlining the major stumbling blocks and development
opportunities.
References
[1] F. Bonaccorso et al. Nat. Photon. 4, 611 (2010)
[2] C. Casiraghi et al. Nano Lett. 7, 2711 (2007).
[3] R. R. Nair et al. Science 320, 1308 (2008).
[4] M. Liu, et al. Nature 474, 64 (2011)
[5] T. Mueller et al. Nat. Photon. 4, 297 (2010)
[6] Xia, et al. Nature Nanotech. 4, 839 (2009)
[7] Z. Sun et al. ACS Nano 4, 803 (2010); Nano Research 3, 653 (2010)
[8] T. Hasan, et al. Adv. Mat. 21,3874 (2009)
[9] T. Gokus et al. ACS Nano 3, 3963 (2009)
[10] T. Hasan et al. Physica Status Solidi B, 247, 2953 (2010)
[11] T.J. Echtermeyer et al. Nat. Commun.2, 458 (2011)
[12] X. Wang, L. Zhi, K. Mullen, Nano Lett. 2007, 8, 323.
[13] X. Li et al. Adv. Mater. 2010, 22, 2743
[14] V.Yong, J. M. Tour, Small, 6, 313 (2009).
[15] N. Yang, et al. ACS Nano 2010, 4, 887.
[16] W. Hong, et al. Electrochem. Commun. 10, 1555 (2008).
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Samsung's approach to graphene transistor
Hyun-Jong Chung*, Heejun Yang, Jinseong Heo, Seongjun Park,
David H. Seo, Hyun Jae Song and Kyung-Eun Byun
Samsung Advanced Institute of Technology, San 14, Nongseo-dong,
Giheung-gu,Yongin-si, Gyeonggi-do Korea
Samsung's approach will be presented. In the approach, monolayer
graphene has been grown on Cu thin film in 6-inch scale at low
temperature using inductive coupled plasma chemical vapor deposition.
More than 99% of the film is single layer according to Raman mapping and
optical microscopy. [1] Scanning tunneling microscopy and spectroscopy
study reveals line structure and undisturbed spectroscopy of graphene
which could be the origin of the thinner layer than thermally grown
graphene on Cu foil. [2] More than 2000 devices were fabricated on the 6-
inch wafer and measured Id-Vg and Id-Vd curves.
References
[1] J. Lee et al., IEDM (2011).
[2] Jeon et al., ACS Nano, 3 (2011) 1915.
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Graphene crystal growth
Luigi Colombo
Texas Instruments Incorporated, Dallas, TX 75243, USA
Graphene with its superior mechanical, thermal, chemical and electrical
properties is emerging as a material that can be used to address many
challenges that face the electronics industry for a number of applications.
In order to meet the requirements set by the various applications it is
imperative to learn how to prepare the optimum graphene.
Graphene for electronics has been prepared by a several techniques but
the technique that is emerging at this time as being the most scalable that
can also meet stringent requirements for electronics, the most demanding
of the applications, is chemical vapor deposition on copper. Copper is a
convenient and necessary substrate at this time because of its unique Cu-
C phase diagram. However while this is a major advantage that has
enabled the graphene community to make significant advances in device
fabrication on a much larger scale than any of the other preparation
techniques, there still remain many challenges that will have to be
addressed. Some of the challenges have to do specifically with the Cu
itself and current process regime; others have to do with graphene
transfer. In this presentation I will review the various graphene
preparation techniques and integration of graphene for electronic
applications. In addition I will provide an overview and layout some of the
aspects of graphene growth and integration that will have to be addressed
before graphene can be integrated in a real silicon device flow.
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Outline
− Applications of graphene for the Si electronics industry
− Graphene crystal growth by chemical vapor deposition
− Integration of graphene with metals and dielectrics
− Key challenges and opportunities in graphene crystal growth and
integration
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Graphene for Flexible Electronics
Andrea Ferrari
University of Cambridge, Engineering Department,
Cambridge CB3 OFA, UK
The richness of optical and electronic properties of graphene attracts
enormous interest. Graphene has high mobility and optical transparency,
in addition to flexibility, robustness and environmental stability. So far, the
main focus has been on fundamental physics and electronic devices.
In this talk, I will outline some of the key properties and advantages of
graphene and related layered materials. In particular I will focus on the
integration of graphene into flexible electronics and plastic substrates.
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Graphene and graphene nanocomposites
Julio Gomez
Avanzare Innovación Tecnológica S.L., Logroño (La Rioja), Spain
One on the handicaps in the graphene technology is the production of
graphene in industrial large scale.
Large scale, reproducible and cost effective synthesis of graphene is
needed for their use in industrial applications, because in most of the
applications, graphene composites are alternative to existing materials:
grams, kilo, 100 kg, tons is the typical scale up for this type of material;
however scalability is not easy and usually it is unsuccessful.
Most of the graphene applications are in composites materials due to its
mechanical, thermal and electrical properties. To obtain a good
integration of the graphene layers it is necessary the functionalization of
graphene, however in most of the cases it produce loss of properties, for
this reason, other alternatives are necessary to obtain optimal
physicochemical properties of the final material.
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Graphene based Metrology
Jan-Theodoor Janssen
National Physical Laboratory, TW11 0LW Teddington, UK
Graphene is a material which holds promise for a myriad of exciting
applications across many technologies and a large number of these have
been demonstrated in principle in the laboratory. However going from
laboratory demonstration to real-life application can be a difficult process
and this is where many new technologies have failed in the past.
Metrology plays an essential role in this process by providing reliable and
reproducible measurement technology which gives confidence in the
results of research. It provides a basis which can be used for the objective
comparison of measurement results and can be used to set standards for
industry to work towards.
Metrology has often been the first adopter of new technologies. In
particular, the quantum Hall effect was one of the first discoveries in
graphene and it has been the metrological community which has taken
this from first observation to the best quantum resistance standard in
period of less than 6 years. Conversely, the demonstration of a high
accuracy quantum Hall effect gives confidence in graphene as a mature
technology with real potential.
In this short talk I will focus on the development of quantum standard for
resistance based on epitaxial graphene and discuss some of the challenges
in developing metrology for graphene production.
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The Graphene Flagship Initiative
Jari Kinaret
Department of Applied Physics
Chalmers University of Technology, SE-41296 Gothenburg, Sweden
In this talk I will briefly describe the graphene flagship pilot. I will describe
the FET flagship process in general and how our flagship proposal is being
developed. In particular, I will describe our initial ideas regarding flagship
implementation and governance and the procedure for developing the
research program for the flagship.
For additional information, please consult: www.graphene-flagship.eu
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Graphene for Advanced Photonics & Plasmonics
F.H.L. Koppens
ICFO, The institute of Photonic Sciences, Barcelona, Spain
In this talk, I will discuss a variety of (nano)opto-electronic applications of
graphene, including ultrafast photodetection, ultrasensitive
photodetection with high gain, and nanoscale optical field confinement
using tuneable surface plasmons in graphene.
Graphene is a promising photonic material whose gapless band structure
allows electron-hole pairs to be generated over a broad range of
wavelengths, from UV, visible, and telecommunication bands, to IR and
THz frequencies. Previous studies of photocurrents in graphene have
demonstrated ultrafast photoresponse near metallic contacts or at the
interface between single-layer and bilayer regions. We will discuss here
also the photoresponse of graphene devices with top gates, separated
from otherwise homogeneous graphene by an insulator. This geometry
enables local on-off control of photodetection by switching from the
bipolar to ambipolar regime.
Moreover, we use a hybrid approach to make graphene photodetectors
for visible and/or infrared light with extremely high gain of up to 109 and a
responsivity of 108 W/A.
The second part of my talk will be devoted to the emerging and potentially
far-reaching field of graphene plasmonics. Graphene plasmons provide a
suitable alternative to noble-metal plasmons because they exhibit much
larger confinement and relatively long propagation distances, with the
advantage of being highly tunable via electrostatic gating. We will discuss
how these properties translate into appealing optical behavior of this
atomically thin material, with potential applications to infrared detection,
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single-photon quantum devices, and ultrasensitive detectors. In particular,
we will show that graphene layers produce extraordinarily large Pucell
factors and light scattering, strong light-matter interaction, and total light
absorption. Compared to conventional plasmonic metals, graphene can
lead to much larger field enhancement and extreme optical field
confinement.
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R2R printing on organic and inorganic materials
Raimo Korhonen
Technology Manager of Printed Functional Solutions Knowledge Center,
Microtechnologies and Electronics, VTT Technical Research Centre of
Finland, Tekniikankatu 1, 33101 Tampere, Finland
Printed intelligence are components and systems which extend the
functions of printed matter beyond traditional visually interpreted text and
graphics, and perform actions as a part of functional products or wider
information systems. VTT has investigated and developed enabling
technologies for printed intelligence, electronics and optics and their
applications with a vision that ‘electronics and functionalities from inks’,
manufactured by printing like R2R ‘continuously running’ methods, enables
cost efficient integration/embedding of simple intelligence everywhere.
Advances in organic and inorganic materials have been an important driver
in these developments. Graphene is seen as future opportunity when
carbon nanotubes are already used in functional inks. Instead of
evolutionary replacement of traditional paper and printing industry
products or ICT/electronics industry products the development goals are in
disruptive new applications like interactive and smart packages and
shopping environments, disposable diagnostics and bioactive paper, large
area sensors for building use and gaming, tag and code technologies for ICT
and hybrid media applications etc. Printed components like OLED, OPV,
transistors, passive components, ecological holograms, sensors, batteries
have been developed as building blocks for system solutions and innovative
products. In addition to technology development VTT is actively building
capabilities towards industrialisation and commercialization. PrintoCent
pilot-factory is ramping-up for scaling up manufacturing, demonstration and
piloting capability and services together with collaborating companies.
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Bulk production of faceted graphene oxide and graphene
platelets: properties and applications
C. Merino*, H. Varela, M. Terrones and I. Martín-Gullón
GRAnPH Nanotech, Burgos, Spain
We will describe the synthesis of graphene oxide platelets and reduced
graphene oxide, which novelty lies in the use of helical-ribbon carbon
nanofibers (GANF, produced by Grupo Antolin) as starting material,
instead of the typically used graphite. These fibers, successfully applied in
different applications, present an unique structure consisting of a coiled
graphene nanoribbon. Grupo Antolin has been successful in developing an
efficient method able to produce bulk amounts of novel types of
graphene-like structures from these carbon nanofibers. The
characterization of the new material using different techniques was
consistent and confirmed the presence of majority single-layer graphene
oxide platelets. In particular, TEM explorations combined with SAED
showed high crystalline single-layer and few-layer (2-5 layers) graphene
oxide with faceted edges, which was also confirmed by Raman
spectroscopy. We will discuss the physico-chemical properties of the
fibers and the derived graphene products. It is clear that all these novel
graphene platelets could be used in the fabrication of robust composites,
sensors, supercapacitors, Li-ion batteries and electronic devices. Further
research in collaboration with Research Laboratories and Universities is
needed and Grupo Antolin is looking forward to explore new horizons in
the field of graphene applications.
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Visions for the future: graphene science driven innovation
Vincenzo Palermo
Nanochemistry Lab – ISOF www.isof.cnr.it/nanochemistry/
National Research Council, Bologna, Italy
The use of new materials has always fostered new technological and
industrial revolutions. Steel, glass, rubber, silicon or uranium are just few
examples of materials that changed our life.
In graphene flagship, we
are trying to translate
the exceptional
properties of graphene
into actual industrial and
commercial applications.
Electrons in graphene don't simply go faster than in silicon, they also obey
a completely different physics, which will allow technology applications
significantly different form the actual ones.
Even if we cannot foresee which will be most important effects of such a
new technology on every day’s life, we can learn from experience of the
past.
A huge carbon-based technological revolution took place in 20th century,
when the first polymers moved from scientific research, to technological
application, to every day’s products, under the name of plastic.
The use of plastic tools or even clothes rapidly displaced metal, wood or
leather for many applications. This was not due to better performance in
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absolute value of plastic respect to more conventional materials; plastic
was not stronger than steel, or warmer than wool; even today people
prefer to buy wooden furniture in their homes respect to plastic ones.
Plastics success was not due to pure performance, but rather to cost and
versatility advantages.
As we now use plenty of plastic
tools, but still build airplanes of
metal and tables of wood,
graphene will not replace silicon
in microelectronics; probably,
silicon will still be at the heart of
computers and microprocessors,
but graphene will allow
information processing and
communication to reach a new
level of diffusion in our life; using low cost devices, transparent flexible
displays and touch screens (based on graphene seamlessly integrated with
plastic materials) we will have the possibility to include data and
information in virtually any aspect of everyday life.
GRAPHENE
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Venture capital and graphene:
Are we at proof of principle or beyond?
Mark Rahn
MTI, UK
No-one is doubting the importance of graphene in scientific endeavor and
most people now agree that graphene will play an important role in
practical materials and devices of tomorrow. Substantial commercial
success of graphene in at least one market is not assured, but is now
highly likely. But great businesses and great projects don't always make
great investments and the principle factor affecting this is time.
Investments with poor timing, timescales that are too long and timescales
that are too short tend to result in failure even if the underlying technical
merit of the project is good. So what about graphene? Is graphene ready
for substantial VC investment beyond a few speculative proof of principle
projects? This, and the bottlenecks for progress, will be discussed.
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A challenge for European Industries
Tapani Ryhänen
Director and Head of Eurolab
Nokia Research Center, Cambridge, UK
The electrical, optical, mechanical and thermal properties of graphene
make it one of the most important new materials for a multitude of
applications in a large number of industrial sectors. In the electronics
industry graphene is expected to become a significant new technology
platform that creates applications ranging from functional composite
materials to integrated circuits and printed electronics. Current examples
of this broad scope of applications include transparent conductive films,
graphene battery electrodes, graphene transistors, graphene composites.
Based on these remarkable early achievements, it is possible to evaluate
the potential consumer value, and graphene has become in a very short
period of time a target of a huge global investment in the billions. In this
competition Europe, while being today the leader in the graphene basic
research, has already a challenge to catch up with the speed of the
American and Asian development of graphene applications. A successful
European research agenda in graphene research requires the creation of a
complete value chain from materials to components and finally to end
products. Graphene based technologies are highly disruptive and will
create opportunities for European manufacturing industries. This
presentation discusses an industrial vision of graphene as a new
technology platform, the challenges in creating new value networks and
chains, the European position in graphene industrialisation, and
opportunities for new manufacturing based on graphene. The
presentation will use examples of future mobile communication products
and their technology requirements to illustrate potential consumer and
societal values of graphene. Nokia Research Center has carried out
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graphene related research since 2006 together with its key university
partners, Aalto University and the University of Cambridge. Examples of
results related to electronics, optoelectronics and electrochemistry will be
shown, with a vision of their impact in radio, sensor, battery and
computing technologies.
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Graphene Technology Platform at BASF
Matthias Schwab
BASF SE
Physical Chemistry, Formulation Technologies
GVC/F, J550, 67056 Ludwigshafen, Germany
Graphene as an emerging material has recently spurred the interest of
scientific research both in academia and industry. At BASF graphene and
graphene materials are currently being studied for several potential fields
of application. We have set up a graphene technology platform aiming at
the systematic investigation of this new carbon material fabricated either
by top-down or bottom-up procedures. Owing to its appealing electrical
conductivity, graphene can be used for conductive formulations and
coatings as well as for polymer composite materials with antistatic
properties. Also, graphene may serve as a new carbon material thus
replacing or complementing traditional carbon black additives in lithium-
ion batteries as well as activated carbons in supercapacitor devices. It is
also intended to evaluate graphene-based transparent conductive layers
for their use in displays, organic solar cells and organic light emitting
diodes. On a longer perspective the semi-conducting properties of
graphene nanoribbons fabricated from chemical bottom-up approaches
shall be explored.
The talk will focus on the recent activities of BASF in the field of graphene
and provide an evaluation of this promising material from an industrial
point of view.
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Graphene spintronics
P. Sénéor1*, B. Dlubak
1, M.-B. Martin
1, A. Anane
1, C. Deranlot
1, B.
Servet2
, S. Xavier2, R. Mattana
1, H. Jaffrès
1, M. Sprinkle
3, C. Berger
3,4,
W. de Heer3, F. Petroff
1 and A. Fert
1
1 Unité Mixte de Physique CNRS/Thales, Palaiseau and Université Paris-
Sud, Orsay, France 2 Thales Research and Technology, Palaiseau, France
3 School of Physics, Georgia Institute of Technology, Atlanta, USA
4 Institut Néel, CNRS, Grenoble, France
Spintronics is a paradigm focusing on spin as the information vector.
Ranging from quantum information to zero-power non-volatile
magnetism, the spin information can be also translated from electronics
to optics. Several spintronics devices (logic gates, spin FET, etc.) are based
on spin transport in a lateral channel between spin polarized contacts. We
want to discuss, with experiments in support, the potential of graphene
for the transport of spin currents over long distances in such types of
device. The advantage of graphene over classical semiconductors and
metals comes from the combination of its large electron velocity with the
long spin lifetime due to the small spin-orbit coupling of carbon. This leads
to spin diffusion lengths ≈ 100 µm and above.
We will present new magneto-transport experiments on epitaxial
graphene multilayers on SiC [1] connected to cobalt electrodes through
alumina tunnel barriers [2]. The spin signals are in the MΩ range in terms
of ∆R = ∆V/I [3]. This is well above the spin resistance of the graphene
channel. The analysis of the results in the frame of drift/diffusion
equations [4] leads to spin diffusion length in graphene in the 100 µm
range for a series of samples having different lengths and different tunnel
resistances. The high spin transport efficiency of graphene can also be
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acknowledged up to 75% in our devices [3]. The advantage of graphene is
not only the long spin diffusion length. The large electron velocity also
leads to short enough dwell times even for spin injection through tunnel
barriers. Our results on graphene can be compared with previous results
[5] obtained on carbon nanotubes. This shows that a unified picture of
spin transport in nanotubes and graphene can be presented.
In conclusion, graphene, with its unique combination of long spin life
times and large electron velocity, resulting in long spin diffusion length,
turns out as a material of choice for large scale logic circuits and the
transport/processing of spin information. Understanding the mechanism
of the spin relaxation, improving the spin diffusion length and also testing
various concepts of spin gate are the next challenges.
References
[1] W.A. de Heer, C. Berger, X. Wu, M. Sprinkle, Y. Hu, M. Ruan, J.A.
Stroscio, P.N. First, R. Haddon, B. Piot, C. Faugeras, M. Potemski,
and J.-S. Moon, Journal of Physics D: Applied Physics, 43, 374007,
2010.
[2] B. Dlubak, P. Seneor, A. Anane, C. Barraud, C. Deranlot, D.
Deneuve, B. Servet, R. Mattana, F. Petroff, and A. Fert, Appl. Phys.
Lett. 97, 092502 (2010)
[3] B. Dlubak, P. Seneor, A. Anane, M.-B. Martin, C. Deranlot, B.
Servet, S. Xavier, R. Mattana, M. Sprinkle, C. Berger, W. A. De
Heer, F. Petroff, and A. Fert, Submitted
[4] H. Jaffrès, J.-M. George, and A. Fert, Physical Review B, 82,
140408(R), 2010.
[5] L.E. Hueso, J.M. Pruneda, V. Ferrari, G. Burnell, J.P. Valdes-
Herrera, B.D. Simons, P.B. Littlewood, E. Artacho, A. Fert, and N.D.
Mathur, Nature, 445, 410, 2007.
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Graphene Logic Gates and Nanoribbon Memories
Roman Sordan1*, Floriano Traversi
1, Fabrizio Nichele
1,
Eberhard Ulrich Stützel2, Adarsh Sagar
2, Kannan Balasubramanian
2,
Marko Burghard2 and Klaus Kern
2,3
1L-NESS Como, Politecnico di Milano, Polo di Como,
Via Anzani 42, 22100 Como, Italy 2Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1,
70569 Stuttgart, Germany 3Institute de Physique des Nanostructures, EPFL, 1015 Lausanne,
Switzerland
Over the past few years there has been a surge of interest in graphene, a
recently isolated single sheet of graphite. From the application point of
view this interest has mainly been driven by the high carrier mobility of
graphene which enables fabrication of field-effect transistors (FETs) with
much smaller channel resistance compared to their Si counterparts. In this
manner, the ultimate limits of Si technology, which are expected at the
sub-10 nm scale, may be overcome, paving the way for digital
nanoelectronics. Here we demonstrate the operation of graphene logic
gates and memories with a current on/off ratio much higher than this in
conventional back-gated graphene devices.
The same resistance of a graphene FET can be obtained for two different
gate voltages, one on either side of the Dirac point. This was exploited to
fabricate four basic logic gates (XOR, NAND, OR, and NOT) with a single
graphene FET. However, these logic gates require off chip resistors to
operate, i.e., they are not integrated on the same graphene flake. An
integrated graphene digital logic gate was obtained by integrating one p-
and one n-type graphene FET on the same sheet of monolayer graphene.
Both FETs initially exhibited p-type behaviour at low gate voltages, since
air contamination shifted their Dirac points from zero to a positive gate
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voltage. Contaminants in one FET were removed by electrical annealing,
which shifted its Dirac point back and therefore restored n-type
behaviour. Boolean inversion is obtained by operating the FETs between
their Dirac points.
In order to improve the on/off ratio of graphene FETs an alternative gate
stack was fabricated. Incorporation of such graphene FETs in logic gates
resulted in an increase in small-signal voltage gain of around two orders of
magnitude in comparison to conventional back-gated devices. Use of
these FETs in a complementary inverter eliminated need for current
annealing and ensured a gain larger than unity under ambient conditions.
Such a high gain is a main prerequisite for direct cascading of logic gates.
An alternative promising strategy to increase the on/off ratio relies upon
patterning of graphene nanoribbons (GNRs), wherein quantum
confinement and edge effects open a bandgap inversely proportional to
the ribbon width. Here we demonstrate a high performance GNR memory
cell based on a nondestructive storage mechanism, i.e., gate voltage
pulses of opposite polarity are used to switch between the distinct on and
off states of the device. The devices were fabricated by patterning
graphene into nanoribbons using V2O5 nanofibres as etching masks. A
pronounced memory effect is observed under ambient conditions, which
is attributed to charge traps in the vicinity of the GNRs. Reliable switching
between two conductivity states is demonstrated for clock frequencies of
up to 1 kHz and pulse durations as short as 500 ns (tested limits) for > 107
cycles. The durable and stable memory cell can be rendered nonvolatile
upon exclusion of oxygen and humidity. GNRs thus emerge as promising
components of highly integrated memory arrays.
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IBM large scale graphene nanoelectronics technologies for
future post CMOS
C.Y. (Chun-Yung) Sung
IBM Nanoelectronics and DARPA CERA Graphene Program Manager
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.
IBM graphene FETs (GFET) yield the highest cut-off frequency (fT) values
reported: >200 GHz on epitaxially grown SiC wafer and >150 GHz on CVD-
grown-transferred onto Si wafer which are well above Si MOSFET fT-Lg
trend in ITRS. IBM implemented in-situ monolayer control using LEEM,
which is capable of monolayer thickness precision and provides real-time
electron reflection images, allowing graphene formation via Si desorption
from the SiC surface to be studied, optimized and controlled. Graphene
uniformly across Si-face SiC wafers with only monolayer variation,
exhibiting high mobility. CVD is a promising way to produce large-scale
graphene which hold great commercialization potential at low cost. IBM
demonstrated large dimension, single layer high quality graphene sheets
CVD grown on Cu foil and transferred to 8“-12” Si wafer. The talk will also
describe the world first wafer scale graphene integrated circuit 10 GHz
mixer fabricated by IBM. These are important advances in large scale
graphene synthesis, device and circuit technologies. A novel
reconfigurable graphene p-n junction based logic device is also
introduced. Its switching is accomplished by using co-planar split gates
that modulate the properties that are unique to graphene including
angular dependent carrier reflection which can dynamically change the
device operation, leading to reconfigurable multi-functional logic.
The talk is going to focus on large-scale graphene that are likely to be
realized within the next 3-10 years. The challenges and practical hurdles
which need to be overcome on the road from research to industry, and
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the opportunities and advantage over competing technologies will be
discussed. Many future graphene nanoelectronics applications will also be
introduced as well.
Outline
− IBM Large Scale Graphene Synthesis Technologies
− IBM Graphene Nanoelectronics Device and Circuit Development
− Applications and Markets
− Challenges and Opportunities
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Graphene and its applications in energy storage devices
Di Wei
Nokia Research Center, Broers Building, 21 JJ Thompson Avenue, CB30FA,
Cambridge, UK
Graphene is a material which consists of a 2D layer of sp2 hybridized
carbon atoms bonded together and the shape that results from it is a
“honeycomb” lattice, notable for its high regularity. It is attracting growing
interest from both scientific community and industries due to the recent
advancements that have led to the award of the Nobel Prize in Physics in
2010. Among the possible fields of applications, the use of graphene in
energy harvesting and storage devices is particularly interesting due to the
number of extremely promising and practical potential uses. Graphene
exhibits superior electrical conductivity, transparency, a high charge
carrier mobility (20 m2/V/sec), fascinating transport phenomena such as
the quantum Hall effect, high surface areas of over 2600 m2/g and a broad
electrochemical window. These features make graphene particularly
advantageous for applications in energy technologies. This talk covers
electrochemical exfoliation of graphene and its comparison with other
different manufacturing methods. It also updates the application of
graphene in energy storage devices such as supercapacitors and batteries
[1, 2].
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References
[1] Di Wei, Hongwei Li, Dongxue Han, Qixian Zhang, Li Niu, Huafeng
Yang, Piers Andrew and Tapani Ryhänen, ’Properties of graphene
inks stabilized by different functional groups’, Nanotechnology, 22
(2011) 245702.
[2] D. Wei, P. Andrew, H. Yang, Y. Jiang, W. Ruan, D. Han, L. Niu, C.
Bower, T. Ryhänen, M. Rouvala, G. A J Amaratunga, and A.Ivaska
‘Flexible solid state lithium batteries based on graphene inks’,
J.Mater. Chem., 21 (2011) 9762.
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Graphene films synthesized via CVD
A. Zurutuza
Graphenea Nanomaterials, San Sebastian, Spain
Researchers envision many different applications for graphene. Depending
on the application the required graphene format can vary from
powder/flake to homogeneous film form. The powder form can be
obtained starting from graphite while the large area graphene films can be
obtained using silicon carbide sublimation and chemical vapor deposition
(CVD) methods. In the CVD method, graphene is synthesized via the
deposition of a carbon source on a metallic catalyst substrate at high
temperatures. Copper and nickel metals have been widely used as
graphene catalysts during CVD growth. Copper has been reported to
control better the monolayer graphene growth [1]. However, the growth
is not the only process that needs to be optimized in order to have high
quality graphene on insulating substrates. The graphene transfer process
is as important as the growth since the synthesized graphene can easily be
damaged during the transfer. After a careful characterization of our
monolayer graphene by means of Raman and optical microscopy, the
limiting factors for a successful graphene transfer were determined.
Moreover, we have also obtained suspended graphene samples which
were characterized via High Resolution TEM and Scanning mode TEM.
References
[1] X. Li, et al Science 324, 1312 (2009).
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Graphene for Future Emerging Technologies Workshop (223)
Last update (10/10/2011)
Nélia Alberto [Instituto de Telecomunicações, Portugal]
Carlos Algora [Universidad Politécnica de Madrid, Spain]
Beatriz Alonso [Graphenea S.A., Spain]
Antonio Alvarez [TOLSA, Spain]
Susana Alvarez-Garcia [ICMM-IQFR CSIC, Spain]
Frazer Anderson [Oxford Instruments, United Kingdom]
Marcelo Antunes [Centre Català del Plàstic, Spain]
Paulo Antunes [Universidade de Aveiro, Portugal]
Miguel Ara [Tindaya Renovables, SL, Spain]
Pablo Ares [Nanotec Electronica, Spain]
Arturo Azcorra [CDTI, Spain]
Zenasni Aziz [CEA Yechnologies, France]
Adrian Bachtold [ICN, CIN2, Spain]
Michael Balthasar [Volvo Technology, Sweden]
Giovanni Barcaro [CNR-IPCF, Italy]
Mike Bath [DGS, United Kingdom]
Manuel Belmonte [ICV-CSIC, Spain]
Ana Benito [CSIC-Instituto de Carboquimica, Spain]
Jose Manuel Berzal [NANOCONECTA, S.L., Spain]
Peter Blake [Graphene Industries Ltd., United Kingdom]
Tamara Blanco [AIRBUS, Spain]
Anders Blom [QuantumWise A/S, Denmark]
Alirio Boaventura [Institute of Telecommunications, Portugal]
Francesco Bonaccorso [Cambridge University, United Kingdom]
Paolo Bondavalli [Thales, France]
Luis L. Bonilla [Universidad Carlos III de Madrid, Spain]
Timothy Booth [DTU Nanotech, Denmark]
Alberto Bosca [ISOM-UPM (ETSIT), Spain]
Alejandro F. Braña de Cal [Universidad Autonoma de Madrid, Spain]
Iria Bravo Segura [Universidad Autonoma de Madrid, Spain]
Francesca Brunetti [University of Rome Tor Vergata, Italy]
Andrew Burgess [AkzoNobel, United Kingdom]
Thomas Büsgen [Bayer MaterialScience AG, Germany]
Peter Bøggild [Technical University of Denmark, Denmark]
Javier Caballero Fernández [Indra, Spain]
Fernando Calle [ISOM-UPM, Spain]
Juan Carratala [AIJU, Spain]
Manuel Carretero [University Carlos III de Madrid, Spain]
Alba Centeno [Graphenea, Spain]
Hyun-Jong Chung [SAMSUNG, Korea]
Giorgio Cinacchi [Universidad Autonoma de Madrid, Spain]
Tim Claypole [WCPC, Swansea Univerisity, United Kingdom]
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Salvatore Coffa [STMicroelectronics, Italy]
Karl Coleman [DGS, United Kingdom]
Luigi Colombo [Texas Instruments, United States]
Philippe Coronel [CEA Grenoble, France]
Antonio Correia [Phantoms Foundation, Spain]
Gabriel Crean [CEA, France]
Alicia de Andrés [CSIC, Spain]
Jesus de la Fuente [Graphenea, Spain]
Beatriz Marta de la Iglesia Rodríguez [CISDEM (UPM-CSIC), Spain]
Jose M. de Teresa [CSIC-Universidad de Zaragoza, Spain]
Hakan Deniz [Universidad Autonoma de Madrid, Spain]
Enrique Diez [Universidad Salamanca, Spain]
Olivier Ducloux [ONERA, France]
Emilio Elizalde [CSIC, Spain]
Vladimir Ermolov [VTT, Finland]
Juan Carlos Escriña López [Técnicas Reunidas S.A., Spain]
Mirko Faccini [Leitat Technological Center, Spain]
Severino Falcon [MICINN, Spain]
Christel Faure [CEA Technologies, France]
Andrea Ferrari [Cambridge University, United Kingdom]
Rafael Ferritto [Nanoinnova Technologies, Spain]
Stephane Fontanell [OMNT, France]
Gio Fornell [Linköping University,InnovationskontorEtt, Sweden]
Thomas Frach [Philips, Germany]
Gaillard Frederic [CEA Grenoble, France]
Jean-Christophe Gabriel [CEA, France]
Francisco Gamiz [University of Granada, Spain]
Mar Garcia-Hernandez [ICMM-CSIC, Spain]
Idoia Gaztelumendi [Tecnalia, Spain]
Adriana Gil [Nanotec Electronica, Spain]
Enrique Gimenez Torres [Universidad Politecnica de Valencia, Spain]
Mehdi Gmar [CEA LIST, France]
Philippe Godignon [CNM-CSIC, Spain]
Julio Gomez [AVANZARE, Spain]
Jean-Yves Gomez [ISORG, France]
Marian Gomez [CSIC, Spain]
Cesar Gomez Anquela [Universidad Autonoma de Madrid, Spain]
Jose-Maria Gomez Rodriguez [Universidad Autonoma de Madrid, Spain]
Guillermo Gomez Santos [Universidad Autonoma de Madrid, Spain]
Miguel Gomez Uranga [University of the Basque Country, Spain]
Berta Gomez-Lor [ICMM, Spain]
Nieves González [CDTI, Spain]
Maria Angeles Gonzalez-Fernandez [Repsol, Spain]
Neil Graddage [Welsh Centre for Printing and Coating, United Kingdom]
Francisco Guinea [ICMM-CSIC, Spain]
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Teresa Guraya [University if the Basque Country, Spain]
York Haemisch [Philips Electronics B.V., Germany]
Uwe Hahn [Universidad Autonoma de Madrid, Spain]
Henri Happy [IEMN - University Lille1, France]
Ari Harju [Aalto University, Finland]
Lars-Christian Heinz [LG Electronics, Germany]
Ana Helman [European Science Foundation, France]
Juan Carlos Hernandez [JCHG24,SL, Spain]
Soon Hyung Hong [Office of Strategic R&D Planning, Korea]
Manuel Ricardo Ibarra [Institute of Nanoscience of Aragon (INA), Spain]
Julen Ibarretxe [University of the Basque Country, Spain]
Marta Iglesias [ICMM-CSIC, Spain]
Adelina Ile [University of Bath]
Jan-Theodoor Janssen [National Physical Laboratory, United Kingdom]
Guido Janssen [TU Delft, Netherlands]
Jose M. Kenny [ICTP-CSIC, Spain]
Chul-Hong Kim [LG Display Co.,Ltd., Korea]
Jari Kinaret [Chalmers University of Technology, Sweden]
Jukka Kolemainen [DIARC-Technology Oy, Finland]
Harri Kopola [VTT, Finland]
Frank Koppens [ICFO, Spain]
Raimo Korhonen [VTT, Finland]
Chang Seok Lee [Ecole Polytechnique, France]
Marcus Liebmann [RWTH Aachen University, Germany]
Niclas Lindvall [Chalmers University of Technology, Sweden]
Harri Lipsanen [Aalto University, Finland]
Nicola Lisi [ENEA, Italy]
Javier LLorca [IMDEA Materials Institute, Spain]
Giulio Lolli [Bayer Technology Services GmbH, Germany]
Vicente Lopez [Técnicas Reunidas, Spain]
María Encarnación Lorenzo [Universidad Autonoma de Madrid, Spain]
Rosa Mª Lozano Puerto [Centro de Investigaciones Biológicas (CIB-CSIC), Spain]
Anders Mathias Lunde [ICMM-CSIC, Spain]
Grzegorz Lupina [IHP, Germany]
Pablo Mantilla Gilart [Fundacion CTC, Spain]
Bernabé Marí Soucase [Universitat Politècnica de València, Spain]
Javier Marti [Nanophotonics Tech Center- Univ. Politec. Valencia, Spain]
Francisco Martínez [Innovarcilla Foundation, Spain]
Cruz Mendiguta [B-Able, Spain]
Eduardo Menendez Proupin [Universidad Autonoma de Madrid, Spain]
Francesco Mercuri [CNR-ISMN, Italy]
Cesar Merino [GRAnPH Nanotech, Spain]
Arben Merkoçi [Catalan Institut of Nanotechnology, Spain]
Giacomo Messina [University Mediterranea of Reggio Calabria, Italy]
Christian Methfessel [Friedrich-Alexander-University Erlangen-Nürnberg, Germany]
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Abir Mhamdi [Faculty of sciences of Tunis, Tunisia]
Jan Michalik [Instituto de Ciencias de Materiales de Aragón, Spain]
Salah Mohammed Moaied [Universidad Autonoma de Madrid, Spain]
Mohsen Moazzami Gudarzi [Amirkabir University of Technology, Iran]
Mauro Montabone [Thales Alenia Space, Italy]
Ana Lilian Montero Alejo [Universidad Autonoma de Madrid, Spain]
Angela Montiel [UC3M, Spain]
Vittorio Morandi [CNR-IMM Bologna, Italy]
Konstantinos Moulopoulos [University of Cyprus, Cyprus]
Prasanta Muduli [University of Leipzig, Germany]
Miguel Murillo [Indra Sistemas, Spain]
Daniel Neumaier [AMO GmbH, Germany]
Sneha Nidhi [Universidad Politecnica de Madrid, Spain]
Luigi Occhipinti [ST Microelectronics, Italy]
Juuso Olkkonen [VTT Technical Research Centre of Finland, Finland]
M. Isabel Osendi [ICV-CSIC, Spain]
Ekmel Ozbay [Bilkent University, Turkey]
Antonio Paez Dueñas [Repsol, Spain]
Vincenzo Palermo [CNR, Italy]
Felix Pariente [Universidad Autonoma de Madrid, Spain]
Seongjun Park [Samsung Electronics, Korea]
Jordi Pascual [ICN, Spain]
Iwona Pasternak [Institute of Electronic Materials Technology, Poland]
Flavio Pendolino [Universidad Autonoma de Madrid, Spain]
Briza Pérez López [Catalan Institut of Nanotechnology, Spain]
Blanca Teresa Pérez Maceda [Centro de Investigaciones Biológicas (CIB-CSIC), Spain]
Amaia Pesquera [Graphenea, Spain]
Laura Polloni [University of Insubria, Italy]
Samuele Porro [IIT – Italian Institute of Technology, Italy]
María Teresa Portolés [Universidad Complutense de Madrid, Spain]
Javier Portugal [CSIC, Spain]
Elsa Prada [ICMM - CSIC, Spain]
Silvia G Prolongo [University Rey Juan Carlos, Spain]
Mark Rahn [MTI Partners, United Kingdom]
Bertrand Raquet [LNCMI - CNRS, France]
Félix Raso Alonso [Centro Español de Metrología, Spain]
Mohamed Ridane [LPN-CNRS, France]
Stephan Roche [ICN, Spain]
Stefano Roddaro [Universidad de Zaragoza, Spain]
Rafael Rodrigo [CSIC, Spain]
María Rodríguez Gude [Universidad Rey Juan Carlos, Spain]
Rafael Roldán [ICMM-CSIC, Spain]
Chantal Roldan [Indra, Spain]
Guenther Ruhl [Infineon Technologies, Germany]
Virginia Ruiz [CIDETEC-IK4, Spain]
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Vanesa Ruiz Ruiz [CIN2-CSIC, Spain]
Nalin Rupesinghe [AIXTRON Ltd, United Kingdom]
Tapani Ryhänen [NOKIA, Finland]
Marcin Sadowski [European Commission, Belgium]
Pablo San Jose [IEM-CSIC, Spain]
Juan Sanchez [University of valencia, Spain]
Jose Sanchez [AIRBUS, Spain]
Carmelo Sanfilippo [VSI, Italy]
Peter Schellenberg [Universidade do Minho, Portugal]
Christoph Schelling [Robert Bosch GmbH, Germany]
Oliver Schlueter [Bayer Technology Services, Germany]
Matthias Schwab [BASF SE, Germany]
Emmanuel Scorsone [CEA, France]
Pierre Seneor [THALES-CNRS, France]
F. Javier Señorans [Universidad Autonoma de Madrid, Spain]
Inés Serrano Esparza [Universidad de Zaragoza, Spain]
Martin Siegel [Zumtobel Group, Austria]
Viera Skakalova [Danubia NanoTech, Slovakia]
Fernando Sols [Universidad Complutense, Spain]
Jamie Soon [Saint Gobain Recherche, France]
Roman Sordan [Politecnico di Milano, Italy]
Tobias Stauber [University Autonoma, Madrid, Spain]
Jan Stroemer [Philips Research, Netherlands]
Chun Yung Sung [IBM Research, United States]
Marko Tadjer [ISOM-UPM, Spain]
Jose A. Tagle [Iberdrola SAU, Spain]
Bernardo Tejada [KRAFFT, Spain]
Wolfgang Templ [Alcatel-Lucent, Germany]
Sukosin Thongrattanasiri [Instituto de Optica - CSIC, Spain]
Jorge Trasobares [Nanozar SL, Spain]
Alejandro Ureña Fernández [Universidad Rey Juan Carlos, Spain]
Falco van Delft [Philips Innovation Services, Netherlands]
Pieter van der Zaag [Philips Innovation Services, Netherlands]
Amadeo Vazquez de Parga [IMDEA Nanociencia, Spain]
José Ignacio Velasco [Centre Català del Plàstic, Spain]
Juan José Vilatela [IMDEA Materials, Spain]
Frank Wang [CamLase Ltd, United Kingdom]
Di Wei [Nokia Research Center, Cambridge, United Kingdom]
Thomas Weitz [BASF SE, Germany]
Rune Wendelbo [Abalonyx AS, Norway]
Joerg Widmer [Institute IMDEA Network, Spain]
Tobias Wirth [Philips Research, Germany]
Aziz Zenasni [CEA Technologies, France]
Afshin Ziaei [Thales R&T, France]
Amaia Zurutuza [Graphenea, Spain]
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Cover image:
Artistic impression of a corrugated
graphene sheet
Credit: Jannik Meyer [University of
Vienna, Austria]
Edited by
Phantoms Foundation
Alfonso Gómez 17
Planta 2 – Loft 16
28037 Madrid – Spain
www.phantomsnet.net
GRAPHENE RESEARCH at the Institut Català de Nanotecnologia (ICN)
The Institut Català de Nanotecnologia (ICN), a private foundation located in Barcelona, was created in 2003 by the Catalan government to conduct high quality scientific research in nanoscience and nanotechnology at an international level. ICN attracts talent worldwide, with over 50% of the current 100 researchers being of foreign origin. The research groups cover a wide range of fields, from the theory of transport of state variables, atomic spectroscopy and manipulation, the study of physical properties of nanostructures (nanoelectronics, spintronics, nanophotonics, nanophononics, nanomagnetism), to the synthesis and functionalisation of nanoparticles, the encapsulation of chemical agents and the development of nanosensors and biosensors. With the objective of bringing nanotechnology to society, ICN develops methods of production and analysis of nano products, creating opportunities for commercialisation and offers training to researchers and technicians. Together with CSIC-ICMM in Madrid, ICN is involved in creating a national network, the Spanish Graphene Program, and also the European pilot action "Graphene Flagship" (www.graphene-flagship.eu). ICN has a number of world leading researchers in these fields, placing it at the vanguard of graphene research. The Group of Prof. A. Bachtold has studied mechanical oscillations in suspended graphene, functioning simultaneously as a transistor of one electron, demonstrating the strong electromechanical coupling of the system. Recently they have fabricated graphene oscillators with the highest quality factor achieved to date, opening possibilities for applications derived from the detection of mass at the atomic level and the ultrasensitive measurement of forces. A total of five groups within ICN, including some 30 researchers, are actively exploring the potential of graphene in various fields, such as spintronics and chemical functionalisation, with potential applications in biotechnology and medicine. For further information, please visit ICN online at www.icn.cat or contact us [email protected] or tel: +34 93 581 4408.
Graphene device in a points station (A. Bachtold)
