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Inspiring Innovation through Publishing Printed in March 2010 SL/JN/03/10/09/E NORTH & SOUTH AMERICA Pan Stanford Publishing c/o Independent Publishers Group 814 North Franklin Street, Chicago, IL 60610, USA Tel: +1 800 888 4741 Fax: +1 312 337 5985 Email: [email protected] EUROPE, MIDDLE EAST & AFRICA Pan Stanford Publishing c/o Eurospan Group 3 Henrietta Street, Covent Garden, London WC2E 8LU, UK | Tel: +44 (0)20 7240 0856 Fax: +44 (0)20 7379 0609 Email: [email protected] JAPAN Pan Stanford Publishing c/o United Publishers Services Ltd 1-32-5 Higashi-shinagawa, Shinagawa-ku, wTokyo 140-0002, Japan Tel: +81 (0)3 5479 7251 Fax: +81 (0)3 5479 7307 Email: [email protected] ASIA & REST OF THE WORLD Pan Stanford Publishing c/o World Scientific Publishing Co. Pte. Ltd. 5 Toh Tuck Link, Singapore 596224 Tel: +65 6466 5775 Fax: +65 6467 7667 E-mail: [email protected] Our titles are available at any good bookstores. Alternatively, you can email us at [email protected] or contact any of the following sales offices nearest to you: Readership: Advanced undergraduate- and graduate-level students in semiconductor physics and technology, spintronics; researchers and engineers in spintronics, semiconductor physics and technology, magnetism. 400pp (approx.) May 2010 978-981-4267-36-6 US$175 Published by Pan Stanford Publishing and distributed exclusively by World Scientific in Asia Pacific, except for India and Japan. Handbook of Spintronic Semiconductors edited by Weimin M Chen (Linköping University, Sweden) Irina A Buyanova (Linköping University, Sweden) Spintronicsi explores the spin degree of freedom of the electron to sense, store, process and transfer information in addition to the electron charge. Semiconductor spintronics promises to combine new spin enabling functionality with the present-day microelectronics and optoelectronics. It also opens the door to new generation of devices, and to the merging of electronics, photonics and magnetics. The success of spintronics relies on our ability to create and control spins. Among many obstacles, generation of electron spin polarization and coherence at room temperature is one of the most important as well as the most challenging issues, which has attracted intense research efforts during recent years. Significant progresses have been made both theoretically and experimentally, while many issues remain unresolved. This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors. Contents: Computational Materials Design in Semiconductor Nano-Spintronics (H Katayama-Yoshida et al.); Transition Metal Doped ZnO (D P Norton et al.); Spintronics in III-Nitride Based Materials (R P Davies et al.); Electronic Structure and Lattice Site Location of Mn in III-Mn-V Ferromagnetic Semiconductors (K Alberi et al.); GaMnP Synthesized by Ion Implantation and Pulsed-Laser Melting (P R Stone et al.); InMnAs Thin Films and Heterostructures (B W Wessels); Magnetic Doping of Group-IV Semiconductors (M M Özer et al.); Dynamics of Localized Spins in Non-Magnetic Semiconductors (T A Kennedy); Zero-Bias Spin Separation (V V Bel’kov & S D Ganichev); Electrical Spin Injection in Hybrid Ferromagnetic Metal/Semiconductor Structures and Spin-Light Emitting Diodes (P Renucci et al.); Magneto-Optical Sepctroscopy of Spin Injection and Spin Relaxation in Spin Light-Emitting Structures (I A Buyanova & W M Chen).
