Heterostructure Silicon
(including Lecture-Tutorial-Laboratory Modules)
Dept. of Electronics & ECE Indian Institute of Technology-
Kharagpur First R & D Centre in
Information and Communication Technology (ICT) Development among IITs
and Universities in IndiaPI: Prof. C. K Maiti, Co-PI: Prof A. S Dhar, and Prof
A. Halder
Research & Development focus
1. To develop e-learning materials for Heterostructure Silicon Course (including tutorial and laboratory modules) for final year undergraduates and postgraduate students and implement online simulation laboratory — real time simulation laboratory accessed through the Internet which can expand the range of simulation experiments in Heterostructure Silicon, transmit online instructions and study materials for anyone, anywhere and anytime.
2. development of e-content for an integrated teaching environment which allows for the provision of online live lectures (a 40-lecture module with tutorials) and a laboratory (10-12 simulation experiments) session for geographically dispersed students.
Steps for Development of RealTIME
Measurement-based Internet Laboratory
Design of ExperimentRemote Operation of the
Instruments(via LabVIEW, IC/CV lite, Easy Expert, VEE etc)
Conversion to Web Application
Launching on the Internet
Total Budget Outlay(Rs. in lakhs)Years
Head 1st 2nd 3rd Total
Capital Equipment Rs. 30.00 - - 30.00FE Comp.
Consumable stores Rs. 10.00 10.00 10.00 30.00
Software/License FeeDuty on import (if any) Rs. nil nil nil
nil
Manpower (JPA/RS/Eqv.) Rs. 7.00 8.00 9.0024.00
Travel & Training Rs. 3.00 4.00 5.0012.00
Contingencies/Accessories Rs. 10.00 13.00 16.0039.00
Grand Total (FE Comp.) 60.00 35.00 40.00 135.00
Grand Total : Rs.
135.00 lakhs
Course Description
IntroductionStrain Engineering in MicroelectronicsStress Induced During ManufacturingSubstrate EngineeringUniaxial vs. Biaxial Strain EngineeringHeteroepitaxy and Strain ControlVirtual SubstratesHybrid Substrates
Text Book: C. K. Maiti, S. Chattopadhyay, and L. K. Bera,"Strained-Si Heterostructure Field-Effect Devices", CRC Press(Taylor and Francis), USA, 2007.
40-50 lectures including tutorial based on the following contents:
Substrate-Induced Strain EngineeringProcess-Induced Stress EngineeringGlobal vs. Local StrainSubstrate-Induced StrainCharacterization of Strained LayersGate Dielectrics on Engineered SubstratesKinetics: Oxidation of Si1-xGex LayersOxidation of Strained-Si LayersRapid Thermal OxidationPlasma Nitridation of Strained-SiHigh-k GateDielectrics on Strained-SiNonclassical CMOS StructuresElectronic Properties of Engineered SubstratesOrientation-Dependent Mobility EngineeringEnergy Gap and Band StructureElectron MobilityHole MobilityFieldDependence
Doping DependenceCarrier LifetimeHeterostructure Field-Effect DevicesSiGe/SiGeC:Material ParametersSiGe Hetero-FETs: Structures andOperationSiGe p-MOSFETs on SOISiGeC Hetero-FETsSiGe-based HEMTsDesign IssuesStrained-Si Technology: Process IntegrationUniaxial Stress: Process FlowBiaxial Strain: Process FlowStrain-Engineered Hetero-FETs: Modeling and SimulationSimulation of Hetero-FETsStrained-SiMaterial Parameters forModelingSimulation of Strained-Si n-MOSFETsCharacterization of Strained-Si Hetero-FETsSPICE Parameter Extraction
VLSI Engineering Laboratory Module will consist of the
following experiments1. Doping Profile Determination 2. Bipolar Device Characterization3. MOS Capacitor Characterization4. MOSFET Characterization5. High Frequency Characteristics of BJT6. MOSFET SPICE Parameter Extraction7. Bipolar Transistor SPICE Parameter
Extraction8. 1/f Noise Characterization in Transistors9. Low Temperature Characterization of
Transistors10.LNA Characterization11.Noise Modeling in MOSFETs12.Cutoff Frequency Determination
Why Heterostructure Silicon ?
March of Technology• MOORE’S LAW : Transistor density on
integrated circuits doubles about every
two years – Intel co-founder Gordon E. Moore (1965)
• Microelectronic silicon computer “chips” have grown from a single transistor in the 1950s to hundreds of millions of transistors per chip on today’s microprocessor and memory devices
March of Technology
• Geometric scaling of transistors : Making Moore’s prediction true
• 90-nm technology → 65-nm technology → 45-nm technology → 32-nm technology
HALT IN MARCH ?HALT IN MARCH ?
• Performance Degradation for smaller gate lengths • Physical limits in scaling
Nano-electronics
0.01
0.1
1
10
1970 1980 1990 2000 2010 2020
Feature size
Year
10
100
1000
10,000
Fe
atu
re s
ize
(n
m)
Fe
atu
re s
ize
(m)
3m
0.8m
1m1.5m
2m
0.5m
0.35m 0.25m
0.18m0.13m
90nm
Gate length
50nmNano-electronics
0.01
0.1
1
10
1970 1980 1990 2000 2010 2020
Feature size
Year
10
100
1000
10,000
Fe
atu
re s
ize
(n
m)
Fe
atu
re s
ize
(m)
3m
0.8m
1m1.5m
2m
0.5m
0.35m 0.25m
0.18m0.13m
90nm
Gate length
50nm
Gate length
50nm
March of TechnologyHeterostructure
Engineering• Heterostructure Engineering: Will
ensure Moore’s law continues to hold true
• Novel solution to enhance device performance by inherently increasing the mobility of the charge carriers by straining the MOSFET channel
Strained-Si Epitaxial Layers2-D lattice view of Tensile strained-Si film
Vegard’s law: aSiGe(x)=aSi(1-x)+aGe(x)
x= Ge fraction
aSi=5.43 Å & aGe=5.66 Å
Band Structure of Tensile Strained-Si
xEC 67.0
xEV 6.0
(a) Band structure of bulk Si
(b) Band structure of bulk Ge
(c)2
... 23.0766.0 xxEE SiGSiSG
Band gap:
What is Technology CAD (TCAD)
Rising Technological ComplexityGate insulator
•SiO2/HiK•Leakage•Trapping
Gate•Work function•Depletion
Channel•Mobility
Raised S/D•Material•Activation•Diffusion
S/D extension•Activation•Junction (USJ)
Device Scaling = More Simulation NeededApplication: Design, analyze and optimize
semiconductor technologies and devices
Compact multi-level technology/ transistor/subsystem TCAD
modeling flow
Block
Gate
Circuit
Device
Process
Materials
Analog/DigitalDesign
Subcircuit expansion
Compact Model (BSIM, PSP, PCM)
Parameter extraction
Process/structural variations
Transistor optimization
Technology development
System performance
Process variationsProcess effect
on device/circuit
Defect effect on device/circuit
Block
Gate
Circuit
Device
Process
Materials
Analog/DigitalDesign
Analog/DigitalDesign
Subcircuit expansionSubcircuit expansion
Compact Model (BSIM, PSP, PCM)
Parameter extraction
Process/structural variations
Transistor optimization
Technology development
System performance
Process variationsProcess effect
on device/circuit
Defect effect on device/circuit
Advanced TCAD Simulation
• Process Simulation Updates• Device Simulation Updates• BSIM4 Model Extraction• Process Optimization using
process compact model (PCM)• Sensitivity, uncertainty & yield
analysis (Yield Management)
TCAD Optimization and Manufacturability
Manufacturing
TCAD Simulations
Generate new data
PCM
Visual querying &Visual optimization
Sensitivity, uncertainty & yield analysisDetermine the most stable process condition
Marked process conditions indicate low sensitivity of the device characteristics to the variations in corresponding Set of process (RED marked)
Yield analysis Device spec limits
Some Strained-Engineered Devices
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe
(a)
SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe
(a)
SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2 Silicon substrate
SiGe SiGe
X (um)
Y (
um)
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer(b)
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer(b)
0 0.1-0.1
0
-0.1
0.1
0.2
X (um)
X (
um
)Silicon substrate
Cap layer
Some available facilities
Hardware facilities
ELVIS SetupNetLAB Server
Noise Figure AnalyzerNetwork Analyzer
Spectrum Analyzer DC Probe station
AFM Setup
Agilent Semiconductor Test Analyzer
Software facilities• Instrument Control software
LabVIEW, VEE, VSA, IC-CAP, IC/C-V light, EasyExpert, Microsoft Inst., etc.
• TCAD softwareSILVACO, Sentaurus, MEDICI, TSupreme, Taurus, Monte Carlo, HSPICE, Nanosim, PCM studio, PARAMOS, etc.
Requirements: List of Equipment
1. Four Probe Resistivity Meter (25 lakhs) 2. Mask Aligner (75 lakhs) 3. Clean Air station (20 lakhs) 4. Rapid Thermal Annealing System (45 lakhs) 5. Semiconductor Test System (35 lakhs) 6. Microwave/ECR Plasma System (55 lakhs) 7. DC/RF Sputtering System (45 lakhs) 8. Probe station (50 lakhs) 9. Programmable power supply (20 Lakhs) 10. Thickness Measurement system (30 lakhs) 11. AFM/STM (30 lakhs) 12. Spectrum analyzer (10 Lakhs) 13. LCR Meter (10 lakhs) 14. Semiconductor Parameter Analyzer (50 lakhs) 15. Noise Figure Analyzer (55 lakhs) 16. Network Analyzer up to 26 GHz with calibration kits (200
lakhs) 17. Parameter extraction and device/process modeling
software tools (45 lakhs)
Achievement in ICT Area
1. NetLAB based Measurement and Analysis2. First On Line Laboratory Demonstration at
Andhra University (AU)3. First short term course on Information
Communication Technology (ICT) on Hardware Laboratory at IIT-Kharagpur
4. Arranged several short term courses on Technology CAD (TCAD) at IIT-Kharagpur
5. Arranged several short term courses on Technology CAD (TCAD) outside IIT-Kharagpur
Book Published1. Applications of Silicon-Germanium
Heterostructure Devices, Institute of Physics Publishing (IOP), UK, 2001.
2. Silicon Heterostructures: Materials and Devices, Institute of Electrical Engineers (IEE), UK, 2001.
3. Selected Works of Professor Herbert Kroemer, Edited, World Scientific, Singapore 2008.
4. Strained-Si Heterostructure Field-Effect Devices, CRC Press, London, 2007.
5. TCAD for Si, SiGe and GaAs Integrated Circuits, IET, UK, 2008.
OUR Publications on INTERNET LABORATORY on
MICROELECTRONICS• A. Maiti and S. S. Mahato, Online Semiconductor Device
Characterization and Parameter Extraction Using World Wide Web, Proc. NCNTE, Feb. 29 – Mar. 01, pp.160-163, 2008.
• A. Maiti and S. S. Mahato, Web-based Semiconductor Technology CAD (TCAD) Laboratory, 50th Intl. Symp. ELMAR-2008, Zadar, CROATIA, 10-12 September 2008.
• A. Maiti and S. S. Mahato, Web-based Semiconductor Process and Device Simulation Laboratory, Proc. of ICEE2008, Intl. Conf. on Engineering Education, "New Challenges in Engineering Education and Research in the 21st Century", PÉCS-BUDAPEST, HUNGARY, JULY 27-31, 2008.
• S. C. Pandey, A. Maiti, T. K. Maiti and C. K. Maiti, Online MOS Capacitor Characterization in LabVIEW Environment, International Journal of Online Engineering (iJOE), vol.5, pp.57-60, 2009.
• A. Maiti, M. K. Hota, T. K. Maiti and C. K. Maiti, Online Microelectronics and VLSI Engineering Laboratory, International Workshop on Technology for Education, Bangalore, Aug 04-06, 2009.
Currently Available Experiments via INTERNET
from IIT-KHARAGPUR(RealTIME Online Measurement-based)
1. Gummel Plot of a BJT2. Output Characteristics of a BJT3. Threshold Voltage of a MOSFET4. Output Characteristics of a MOSFET5. MOSFET Parameter Extraction6. BJT SPICE Parameter Extraction7. Low Noise Amplifier
Characterization8. Surface Analysis using AFM/STM9. Circuit Analysis Using NI-Elvis
NetLAB Webpage
Partner/USER Institutions
Our Current Partners areVIT, Vellore
NIST, Berhampur
OUR ONLINE LABORATORY HAS BEEN USED and TESTED BY
More Than 50 ENGINEERING COLLEGES
and10 UNIVERSITIES
Short Term Course/Workshop
AICTE/MHRD sponsored SUMMER SCHOOL at IIT KHARAGPUR
May 17-23, 2009
Applications of ICT for
Hardware Laboratory
52 participants from 40 Engineering Colleges
List of Participating Institutions
VIT University, VelloreNIST, BerhampurWest Bengal University of Technology,
KolkataUniversity of Calcutta Inst. of Radiophysics and ElectronicsNorth Bengal University, SiliguriNIT, DurgapurBengal Engg. and Science University, ShibpurTezpur (Central) University, Tezpur
IMPS College of Engg. and Technology, MaldaGurgaon College of Engg., HaryanaHi-Tech Institute of Technology, KhurdaNational Institute of Technology, WarangalSSN College of Engg., TamilnaduSynergy Institute of Engg. and Technology, DhenkanalMedi-caps Institute of Technology Management, IndoreDr. BR Ambedkar National Institute of Technology, PunjabJaypee Univ. Of Information Tech., Solan, H.P.Dronacharya College of Engg., Gurgaon, HaryanaCVR College of Engg., Hyderabad, A.P.Sai Spurthi Institute of Technology, A.P.Lingaya's Institute of Mgt and Technology, Faridabad
Purushottam Institute of Engg. Tech., Rourkela, OrissaNational Institute of Science & Technology, OrissaHi-Tech Institute of Tech., OrissaGLAITM, Mathura, U.P.Dr. B. C. Roy Engg. College, DurgapurTradient Academy of Tech., OrissaModern Engg. & Management Studies, OrissaGLA Institute of Tech. & Management, MathuraSynergy Institute of Engg. & Tech., OrissaITER, BhubaneswarSynergy Institute of Engg. & Tech., OrissaDRIEMS, CuttackLingaya’s University, FaridabadBirla Institute of Technology, PatnaDr. Sivanthi Aditanar College of Engg., Tamilnadu
PSN Group of Institutions, TamilnaduOrissa Engg. College, BhubaneswarJIET, CuttackRaajdhani Eng. College, BhubaneswarWorld Institute of Technology, GurgaonDept. of Bio-Medical Engg., Andhra UniversityAndhra University College of Engg., VisakhapatnamGITAM University, VisakhapatnamChaitanya college of Engg., VisakhapatnamSRKR Engg. College, VisakhapatnamGovt. Polytechnic, BheemiliSanketika Vidya Parishad Engg. College, VisakhapatnamJNTU College of Engg., HyderabadNational Engg. College, TamilnaduInstitute of Technology and Management, Gurgaon
Thank You