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High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic...

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Enabling a Microelectronic World ® High Power Packaging: Materials, Design and Analysis Considerations By Jesse E. Galloway, Ph.D High Power Packaging: Materials, Design and Analysis Considerations By Jesse E. Galloway, Ph.D
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Page 1: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

Enabling aMicroelectronic

World®

High Power Packaging: Materials, Design and Analysis Considerations

By Jesse E. Galloway, Ph.D

High Power Packaging: Materials, Design and Analysis Considerations

By Jesse E. Galloway, Ph.D

Page 2: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Packaging Trends

2006 2008

Node

Bus Voltage

Clock Frequency

Transistor Count

Leakage Power (%)

Node

Bus Voltage

Clock Frequency

Transistor Count

Leakage Power (%)

90nm ––––– 60nm ––––– 45nm

1.3V ––––– 1.1V ––––––––– 1.0V

––––––––– 35%/yr increase –––––––

–––––––– 400M ––––––––––– 1000M

28% –––––––– 43% ––––– 58% –

90nm ––––– 60nm ––––– 45nm

1.3V ––––– 1.1V ––––––––– 1.0V

––––––––– 35%/yr increase –––––––

–––––––– 400M ––––––––––– 1000M

28% –––––––– 43% ––––– 58% –

Page 3: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

RF Modules PS-fcCSP with Interposer

Cell Phone SiPSCSP

FlashDRAM

Flip-Stack CSP

memoryLogic

MCM Packaging

PBGA FCBGA FCBGA FCBGA

Page 4: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

• Memory proximity

• Higher Speed

• Integration of components

• Flexible packaging

• Modular / Scalable

• Multi-function package integration at the Subcon

MCM Benefits

Page 5: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

MCM Challenges

• Non-symmetric layout

• Disparity in IC peak temperature limits

• Choosing optimal material sets for all components

• Minimizing package level stress

• Minimizing 2nd level interconnect stresses

• Maintaining low thermal resistances

Page 6: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

4W 6W2W 20W

IO

40W 100W 200W

100

400

1000

No Heat Sink Heat SinkPackaging Thermal Design Space

Page 7: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Without Heat Sink

~40%

~60%

Thermal performance primarily function of design:• Ground vias• Ground balls• Size of heat spreader• Flow velocity

Page 8: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

<10%

With Heat Sink

>90%

Thermal performance primarily function of design:• Heat sink size• Bond line thicknesses• Thermal interface resistance• Flow velocity

Page 9: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

TIM I Material(Conductivity)

02468

101214161820

0 2 4 6 8 10TIM I Thermal Conductivity (W/m/k)

% D

iffer

ence

The

ta ja

No Heat Sink Heat Sink Nat Conv Heat Sink Forced Conv

FCBGABody 35mmDie 9mm

Page 10: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

TIM I Material(Parameters)

• Dispensability

• Stability over time at elevated temperature

• Adhesive strength

• Bulk thermal conductivity

• Contact resistance

• Maximum filler size

Page 11: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

TIM I Material(Voiding)

• Dispense uniformity• Flow uniformity• Volatiles

Page 12: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

PolyimideStandoff

BLT

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 40 80 120BLT (µm)

Thet

a*A

rea

(C/W

*cm

2 ) Material C Material D

Contact Resistance

Slope = (Bulk Conductivity)-1

TIM I Material(Thermal Resistance)

Bulk conductivity andcontact resistanceaffect Theta jc

Copper

Silicon

TIM

θcu-da

θda-bulk

θsi-da

Page 13: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

TIM I Material(Aging)

(Temperature Cycling)

0

5

10

15

20

25

0 500 1000Temp Cycles (0 - 100C)

Material E Material F

% In

crea

se in

The

ta jc

10000

20

40

60

0 500Hours at 150C

% In

crea

se in

The

ta jc

(High Temperature Storage)

Material G

Page 14: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Design Feature(Bare Die Vs. Lid)

TIM II

Silicon

TIM II

TIM I

SiliconLid

Lidded FCBGA

SameθFin

Bare die higher

θHTSNK

Bare die higher

θTIM II

Lidded higher

NAθLid

Lidded higher

NAθTIM I

Sameθdie

CommentBare Die FCBGAq

diedie

die

AkL

diedie

die

AkL

dieITIM

TIMI

AkL

Die

Lid

LidLid RR

Lkln

21

π

dieTIMII

TIMII

AkL

LidTIMII

TIMII

AkL

Die

HTSNK

HTSNKHTSNK RR

Lkln

21

π

Lid

HTSNK

HTSNKHTSNK RR

Lkln

21

π

FinFIN Ah1

FinFIN Ah1

Page 15: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

100

105

110

115

40 60 80 100 120TIM Gap Thickness (µm)

Tj,m

ax(C

)Bare DieLid

Body 42.5mmDie 20mm

Cross Over Point

Design Feature(Impact of Including Lid)

Cross over point depends on:•Resistance of TIM•Conductivity and thickness of Lid•Planarity of interfaces

Page 16: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

40

50

60

70

80

90

0.5 1.0 1.5 2.0 2.5

Lid Thickness (mm)

Max

TIM

I B

LT (u

m)

0

40

80

120

160

0.5 1.0 1.5 2.0 2.5Lid thickness (mm)

Lid

War

page

(µm

)Design Feature(Lid Thickness)

δΙΙδΙTIM ITIM II

( )IIIIIIJCJCkk ,,, δδθθ =

Page 17: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Design Feature(Proximity of die)

Xo

Tσ=0 (110 – 150°C) → 25°C

Page 18: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Design Feature(Proximity of die)

Page 19: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

0.04250.045

0.04750.05

0.05250.055

0.05750.06

0.06250.065

0.06750.07

0.07250.075

0.07750.08

0.0825

2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

Die Spread (mm)

BLT

(mm

)

Outer Die Corner Inner Die Corner Average BLT

2.5 mm Die Spacing

10 mm Die Spacing

Design Feature(Proximity of die)

Page 20: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Design Feature(Proximity of die)

ASIC

MemoryDie

Lateral Heating affected by die spacing

Page 21: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

2mm x 2mm hot spot with 10x heat flux

Performance Feature(Impact of TIM I Delamination On Hot Spot)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 0.5 1.0

Hot Spot Location

Rel

ativ

e Th

eta

JC

adhered delaminated

0.0

0.5

1.0

Page 22: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Materials•TIM I•Flash diffusivity•Adhesion•Thermal resistance•Aging•Warpage

Design•Solder join reliability•Warpage control•Layout•Lid

Analysis•Hot Spot•Warpage•Solder joint reliability•Die interaction

Materials – Design - Analysis

Page 23: High Power Packaging: Materials, Design and Analysis ... Amkor pres.pdfEnabling a Microelectronic World® High Power Packaging: Materials, Design and Analysis Considerations By Jesse

© 2007 Amkor Technology, Inc. Mar-07,

Conclusions

• High power MCMs require low resistance TIMs

• Materials must be stable over time

• Delamination becomes critical issue when hot spots are located near die edge

• Design trade-offs must be analyzed to specify optimal lid design

• Location of MCM die affect maximum junction temperature and BLT


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