Frank TORREGROSA le 21/04/2004Présentation activité composant 1
IBS - Ion Beam Services
Profile
Technologies
Devices & sensor fabricat ion
Part icipat ion to R&D programs
Researched partnership
Frank TORREGROSA le 21/04/2004Présentation activité composant 2
Profile : Products and services
Products and services for microelect ronicsCustom Ion ImplantationEquipmentsServices on equipments
Devices Fabrication
To the following marketsIntegrated devices and power componentsOptoelectronics and radiation detectors
Chemical sensors and Microsystems and biosensors
Frank TORREGROSA le 21/04/2004Présentation activité composant 3
Profile & Turnover
SME
Founding : 1987
Capital : 840 k
Staff : 49 640 10001646 1816
2439
48785500
0
2000
4000
6000
K
1990 1992 1994 1996 1998 2000 2002
CA IBS Corporate
PRODUCTS distributionIBS S.A. 2002
Services32%
other13%
Equipments15%
Custom devices21%
Ion implantation19%
GEOGRAPHICAL distribution
France 34%
Germany 24%
Great Britain 28%
Miscellaneous Europe 9%
World 5%
Frank TORREGROSA le 21/04/2004Présentation activité composant 4
Technologies
Plasma and ion beam treatments
Semiconductors doping
Ion beam equipments
Microelectronics Processing
Power devices
Sensors
Frank TORREGROSA le 21/04/2004Présentation activité composant 5
Products and services
Ion implantation
Equipments and services
Custom devices
Frank TORREGROSA le 21/04/2004Présentation activité composant 6
Custom devices fabrication
A versat ile subcont ract ing solut ionIndividual process stepsTechnological blockSmall and medium size production of custom devices
Microelectronics technologiesIon implantation doping and thermal processingThin f ilm coat ing by PVD and PECVDPhotolithography
Wet, plasma and ion beam etching
Specific innovative processesIon beam Surface engineering CMOS compat ible anisot ropic etching (TMAH based)
Frank TORREGROSA le 21/04/2004Présentation activité composant 7
Reduce the cost of your custom devices
The interest of an external small foundryFulfill the lack between laboratory and big industrial foundryindependency and confidentialityservices for companies that want to produce custom devices without prohibitive investment Reduced development timeReduced price in comparison with self technological maintenance even for medium size production Risks sharingRespect of industrial properties
Frank TORREGROSA le 21/04/2004Présentation activité composant 8
Conception Fabrication & Test
CONCEPTIONProcess integrationElectrical simulationMask Designing
FabricationClean roomFront end fabrication & controlBack-end laboratory
Test & CharacterisationElectrical probingOptical characterisation
Frank TORREGROSA le 21/04/2004Présentation activité composant 9
Production facilities
Front EndClean room : 350 m2Classe 10, 100 et 1000Wafer size from 2 to 6
Production EquipmentsWafer cleaningWet etchingIon implantationSputtering (DC and RF)Dry etching (RIE)Ion beam etchingPhotolithographyOxidation and diffusionLPVCD and PECVD
Frank TORREGROSA le 21/04/2004Présentation activité composant 10
Applications
Discrete devices with j unct ionsdiodes MOS et bipolar transistors UV et visible detectors
Sensorsmechanicalchemical, biochemical & environmental
Passives and interconnectioncapacitors & resistors
inductors
Optical micro-components by our partner SILIOS Technologies
Frank TORREGROSA le 21/04/2004Présentation activité composant 11
Examples : Sensors & discrete devices
Process steps for small and medium size production
Anisotropic etching of 15/20 dies lotsPressure sensors (600/week)Doped substrates for analogic integrated devices
Full processes for small and medium size production
Solar cells prototyping : 5 mask levelsPIN photodiodes : 3 mask levelsChemical sensor electronic baseMOSFET for gamma dosimetryIntegrated addressing diodes for ink jet printersMOS for electron spin studies
Frank TORREGROSA le 21/04/2004Présentation activité composant 12
Example : Power devices
Si et SiC Diodes (up to 4kV)
HV MOSFET (up to 2,4 kV)
Bipolar t ransistors (1kV, 30 A)
Characterisation and failure analysisElectrical characterisationPhysical analysisAging and reliability studies
Electrical behaviour simulation
Frank TORREGROSA le 21/04/2004Présentation activité composant 13
CMOS compat ible Postprocessing
Multilevel cavitiesmicrocaloducs
Devices on suspended membranes
Passive devicesimplanted resistorsthin film resistors
inductancescapacitors
300µm
150µm
300µm
200µm
Example : Wafer level packaging
Frank TORREGROSA le 21/04/2004Présentation activité composant 14
European : 4th PCRD : MULTISTRESS (tailoring st ress of multilayers )5th PCRD : ESCAPEE (SiC power devices)
6th PCRD : NANOCMOS (next generat ion of MOS devices)PIDEA : WALPACK (wafer level packaging)
National :RMNT : CANAST (carbon nanotubes)DGA : Power devices
Participation to R&D consortiums
Frank TORREGROSA le 21/04/2004Présentation activité composant 15
Technology t ransfer to further product ion : Consortium example :
R&D lab bringing a development ideaR&D lab for biological characterizationIndustrial END-USER for final integration and system commercialization
IBS for industrial expertise, technological transfer, prototyping and final chip production
Innovat ive technology for bio-active surfaces Surface Engineering by ion implantation
Anti bacterial (Ag implantation)Tailoring of wettability and surface adhesion
Modification of optical characteristicsCatalytic surfaces
What can we offer as a partner in a R&D program for bio-sensor development
Frank TORREGROSA le 21/04/2004Présentation activité composant 16
Contact us
ION BEAM SERVICESZI Peynier / Rousset
Rue Gaston Imbert prolongéeF-13790 Peynier
FranceTel +33 4 42 53 89 53Fax + 33 4 42 53 89 59
www.ion-beam-services.com
Frank TORREGROSAR&D Manager
