Date post: | 27-Oct-2014 |
Category: |
Documents |
Upload: | suja-ganesan |
View: | 1,399 times |
Download: | 74 times |
112/04/07 1
VLSI Design and Layout PracticeVLSI Design and Layout PracticeLect5 – Stick Diagram & Scalable Lect5 – Stick Diagram & Scalable
Design RulesDesign Rules
VLSI DESIGN112/04/07 2
IC Layout Concept and Examples
I. Stick Diagram II. Design Rules III. Layout Verification
VLSI DESIGN112/04/07 3
A. Basic Concept 1. Based on the view point of IC layout, the
stick diagram can help us understand the circuit function and its geometrical location relative to other circuit blocks.
Legend:
contact
metal 2
metal 1
poly
ndiff
pdiff
VDD
in
VSS
out
■
VLSI DESIGN112/04/07 4
A. Basic Concept 2. Although the stick diagram is an abstract
presentation of real layout, it can use graphical symbols or legend to allocate the circuit to 2-diomensional plane and reach the aim same as the physical layout does.
3. The stick diagram is similar to a backbone of the real layout but without the real size and aspect ratio of the devices, it still can reflect the real condition to layout of the silicon chip.
VLSI DESIGN112/04/07 5
B. Notations of the stick diagram
VLSI DESIGN112/04/07 6
Stick Diagram Intermediate representation
between the transistor level and the mask (layout) level.
Gives topological information (identifies different layers and their
relationship) Assumes that wires have no width. It is possible
to translate stick diagram automatically to layout with correct design rules.
VLSI DESIGN112/04/07 7
Stick Diagram
1. When the same material (on the same layer) touch or cross, they are connected and belong to the same electrical node.
2. When polysilicon crosses N or P diffusion, an N or P transistor is formed. Polysilicon is drawn on top of diffusion. Diffusion must be drawn connecting the source and the drain. Gate is automatically self-aligned during fabrication.
VLSI DESIGN112/04/07 8
Stick Diagram
3. When a metal line needs to be connected to one of the other three conductors, a contact cut (via) is required.
VLSI DESIGN112/04/07 9
Stick Diagram 4. Manhattan geometrical rule: When we use only
vertical and horizontal lines In orthogonal to describe circuitry.
Boston geometrical rule: The stick diagram also allows curves to describe circuitry.
5. In order to describe N/PMOS more completely, to add n-well 、 P+ select 、 well contact and substrate contact are optional for 4-terminal
notation.
VLSI DESIGN112/04/07 10
Conclusion
1. Stick diagram is a draft of real layout, it serves as an abstract view between the schematic and layout.
2. Stick diagram uses different lines, colors and geometrical shapes to present circuit nodes, devices, and their relative location.
3. Stick diagram doesn’t include information about the accurate coordinates and sizes of device, the length and width of conductors and the real size of well region.
VLSI DESIGN112/04/07 11
CMOS Inverter Stick Diagrams
Basic layout
․ More area efficient layout
VLSI DESIGN112/04/07 12
CMOS inverter described in other way.
VDD
in
VSS
out
CMOS Inverter Stick Diagrams
VLSI DESIGN112/04/07 13
CMOS Transmission Gate
The transmission gate Circuit schematic Stick diagram
VLSI DESIGN112/04/07 14
CMOS Stick DiagramsNAND/NOR
VLSI DESIGN112/04/07 15
CMOS Stick DiagramsNAND
VLSI DESIGN112/04/07 16
< Exercise 1 >
To draw the following circuitry by using a stick diagram
VLSI DESIGN112/04/07 17
< Exercise 2 > To draw the stick diagram and the schematic for the following layout
NWELL
NSELECT
PSELECT
POLY
ACTIVE
METAL1
NWELL
NSELECT
PSELECT
POLY
ACTIVE
METAL1
VLSI DESIGN112/04/07 18
CMOS Stick DiagramsNOR
VLSI DESIGN112/04/07 19
VLSI DESIGN112/04/07 20
CMOS Inverter Mask Layout
Min. spacing andline width consideration
VLSI DESIGN112/04/07 21
Lambda-based Design Rules
Lambda design rules are based on a reference metric λthat has units of um.
All widths, spacing and distances are written in the form Value = m λ
Where m is scaling multiplier.<e.g.> λ= 1um w = 2 λ=2um s = 3λ=3um
VLSI DESIGN112/04/07 22
Lambda based design: half of technology since 1985. As technologychanges with smaller dimensions, a simple change in the value of canbe used to produce a new mask set.
All device mask dimensions are based on multiples of , e.g., polysilicon minimum width = 2. Minimum metal to metal spacing = 3
6
2
6
3
3
Lambda-based Design Rules
VLSI DESIGN112/04/07 23
Active Contact and Surround Rule
VLSI DESIGN112/04/07 24
Potential Problem - Misalignment
VLSI DESIGN112/04/07 25
Potential Problem – Short between Source and Drain
VLSI DESIGN112/04/07 26
Design Rule (0)
Due to the photo resolution, concentration, temperature and reaction time of the chemical reagents, the layout should tolerate some errors caused by process environment.
In order to avoid the influence from process variation, the layout of the circuit schematics should follow the design Rule。
VLSI DESIGN112/04/07 27
The purpose of design rules
Ref. Jan M. Rabaey, et. al, © Digital Integrated Circuits 2nd Edition
Interface between designer and process engineer
Guidelines for constructing process masks
Unit dimension: Minimum line width scalable design rules: lambda parameter absolute dimensions (micron rules)
VLSI DESIGN112/04/07 28
Design Rules(1)
Layout rules are used for preparing the masks for fabrication. Fabrication processes have inherent limitations in accuracy. Design rules specify geometry of masks to optimize yield and
reliability (trade-offs: area, yield, reliability). Three major rules:
Wire width: Minimum dimension associated with a given feature.
Wire separation: Allowable separation. Contact: overlap rules.
VLSI DESIGN112/04/07 29
Design Rules(2)
Two major approaches: “Micron” rules: stated at micron
resolution. rules: simplified micron rules with
limited scaling attributes. may be viewed as the size of minimum
feature. Design rules represents a tolerance which
insures very high probability of correct fabrication (not a hard boundary between correct and incorrect fabrication).
Design rules are determined by experience.
VLSI DESIGN112/04/07 30
Terminology & Definition
Min. Width : The min. width of the line (layer)
<Example> Wpoly(min.) = 0.5um
Min. Space : The min. spacing between lines with same material
<Example> Spoly-poly(min.) = 0.5um
VLSI DESIGN112/04/07 31
<Min. Extension : The min. extension over different layers
<Example> Poly-gate extension over diffusion area = 0.55um
Min. Overlap : The overlap between different layers
<Example> Poly1 overlap Poly2 min. = 0.7um
Terminology & Definition
VLSI DESIGN112/04/07 32
Terminology & Definition
Max. area of the specific region. <Example> Bonding Pad Area, max. =
100um x 100um
VLSI DESIGN112/04/07 33
Conventional Layer Definition
Layer
Polysilicon
Metal1
Metal2
Contact To Poly
Contact To Diffusion
Via
Well (p,n)
Active Area (n+,p+)
Color Representation
Yellow
Green
Red
Blue
Magenta
Black
Black
Black
Select (p+,n+) Green
Layer
Polysilicon
Metal1
Metal2
Contact To Poly
Contact To Diffusion
Via
Well (p,n)
Active Area (n+,p+)
Color Representation
Yellow
Green
Red
Blue
Magenta
Black
Black
Black
Select (p+,n+) Green
Layer
Polysilicon
Metal1
Metal2
Contact To Poly
Contact To Diffusion
Via
Well (p,n)
Active Area (n+,p+)
Color Representation
Yellow
Green
Red
Blue
Magenta
Black
Black
Black
Select (p+,n+) Green
VLSI DESIGN112/04/07 34
SCMOS Design Rules
IntraIntra--Layer Design RulesLayer Design Rules
Metal24
3
10
90
Well
Active3
3
Polysilicon
2
2
Different PotentialSame Potential
Metal13
3
2
Contactor Via
Select
2
or6
2Hole
Ref. Jan M. Rabaey, et. al, © Digital Integrated Circuits 2nd Edition
VLSI DESIGN112/04/07 35
SCMOS Design Rules
1
2
1
Via
Metal toPoly ContactMetal to
Active Contact
1
2
5
4
3 2
2
VLSI DESIGN112/04/07 36
SCMOS Design Rules
1
3 3
2
2
2
WellSubstrate
Select3
5
VLSI DESIGN112/04/07 37
SCMOS Design Rules
VLSI DESIGN112/04/07 38
MOSIS Layout Design Rules
MOSIS design rules (SCMOS rules) are available at http://www.mosis.org.
3 basic design rules: Wire width Wire separation Contact rule
MOSIS design rule examples
VLSI DESIGN112/04/07 39
III. Layout Verification
A. Definition DRC – Design Rule Check ERC – Electrical Rule Check LVS – Layout Versus Schematic LPE – Layout Parameter
Extraction
VLSI DESIGN112/04/07 40
Layout Verification
B. DRC(Design Rule Check) : => To check the min. line width
and spacing based on the design rules.
C. ERC(Electrical Rule Check) : => To check the short circuit
between Power and Ground, or check the floating node or devices.
VLSI DESIGN112/04/07 41
Layout Verification
D. LVS(Layout versus Schematic) : => To verify the consistency between
Schematic and Layout. For example : to check the amount of transistor numbers, sizes of W/L.
E. LPE or PEX(Layout Parameter Extraction) :
=> From the database of layout, to extract the devices with parasitics including effective W/L, parasitic capacitances and series resistance. The extracted file is in SPICE format and can be used for Post-Layout Simulation 。
VLSI DESIGN112/04/07 42
Layout Verification
F. SimulationsPre-Layout Simulation - before layout workPost-Layout Simulation – after layout work, post layout simulation will reflect more realistic circuit performance.
VLSI DESIGN112/04/07 43
Layout Verification
The complete design environment of Fill-Custom Design Design database – Cadence Design Framework IICircuit Editor – Text editor/Schematic editor (S-edit, Composer)Circuit Simulator – SPICE,TSPICE, HSPICELayout Editor – Cadence Virtuoso, Laker, L-editLayout Verification Diva, Dracula, Calibre, Hercules
VLSI DESIGN112/04/07 44
Concluding Remarks Milestones technology in silicon era
Transistor Integrated Circuits CMOS Technology Key weapons in SOC era
Design Automation Design Reuse
Breakthrough techniques in design automation Simulation (e.g., SPICE, Verilog-XL, etc.) Automatic Placement and Routing (APR) Logic Synthesis (e.g., Design Compiler) Formal Verification Test Pattern Generation
It is EDA that pushes the IC design technology forward !
VLSI DESIGN
Design rules and Layout Why we use design rules?
Interface between designer and process engineer
Guidelines for constructing process masks
VLSI DESIGN
Design RulesMinimum length or width of a feature on a layer is 2
Why?
To allow for shape contraction
Minimum separation of features on a layer is 2
Why?
To ensure adequate continuity of the intervening materials.
VLSI DESIGN
Design RulesMinimum width of PolySi and diffusion line 2Minimum width of Metal line 3 as metal lines run over a more
uneven surface than other conducting layers to ensure their continuity
Metal
Diffusion
Polysilicon
VLSI DESIGN
Design RulesPolySi – PolySi space 2Metal - Metal space 2Diffusion – Diffusion 3 To avoid the possibility of their
associated regions overlapping and conducting current
Metal
Diffusion
Polysilicon
VLSI DESIGN
Design RulesDiffusion – PolySi To prevent the lines overlapping to
form unwanted capacitorMetal lines can pass over both diffusion and polySi
without electrical effect. Where no separation is specified, metal lines can overlap or cross
Metal
Diffusion
Polysilicon
VLSI DESIGN
Metal Vs PolySi/Diffusion
Metal lines can pass over both diffusion and polySi without electrical effect
It is recommended practice to leave between a metal edge and a polySi or diffusion line to which it is not electrically connected
Metal
Polysilicon
VLSI DESIGN
poly-poly spacing 2
diff-diff spacing 3 (depletion regions tend to spread
outward) metal-metal spacing 2
diff-poly spacing
Review:
VLSI DESIGN
Note
Two Features on different mask layers can be misaligned by a maximum of 2 on the wafer.
If the overlap of these two different mask layers can be catastrophic to the design, they must be separated by at least 2
If the overlap is just undesirable, they must be separated by at least
VLSI DESIGN
When a transistor is formed?
Gate is formed where polySi crosses diffusion with thin oxide between these layers.
Design rules
min. line width of polySi and diffusion 2
drain and source have min. length and width of 2
And
VLSI DESIGN
The polySi of the gate extends 2 beyond the gate area on to the field oxide to prevent the drain and source from shorting.
no overlap overlap
diffusionshort
• Diffusion Problems
PolySi extends in the gate region…
VLSI DESIGN
Depletion TransistorWe need depletion implant
An implant surrounding the Transistor by 2
Ensures that no part of the transistor remains in the enhancement mode
A separation of 2 from the gate of an
enhancement transistor avoids affecting
the device.
2
VLSI DESIGN
Depletion Transistor
Implants are separated by 2to prevent them from merging
2
VLSI DESIGN
Butting Contact
The gate and source of a depletion device can be connected by a method known as butting contact. Here metal makes contact to both the diffusion forming the source of the depletion transistor and to the polySi forming this device’s gate.
Advantage:
No buried contact mask required and avoids
associated processing.
VLSI DESIGN
Butting Contact
n+ n+
Insulating Oxide
Metal
Gate Oxide PolySi
Problem: Metal descending the hole has a tendency to fracture at the polySi corner, causing an open circuit.
VLSI DESIGN
Buried Contact
It is a preferred method. The buried contact window defines the area where oxide is to be removed so that polySi connects directly to diffusion.
Contact Area must be a min. of 2*2to ensure adequate contact area.
2
2
Contact Area
VLSI DESIGN
Buried Contact
The buried contact window surrounds this contact by in all directions to avoid any part of this area forming a transistor.
Separated from its related transistor gate by to prevent gate area from being reduced.
VLSI DESIGN
Buried Contact
Here gate length is depend upon the alignment of the buried contact mask relative to the polySi and therefore vary by .
2
2
Channel length Channel length PolySi
Buried contactBuried contact
Diffusion
VLSI DESIGN
Contact CutMetal connects to polySi/diffusion by contact cut.
Contact area: 22
Metal and polySi or diffusion must overlap this contact area by so that the two desired conductors encompass the contact area despite any mis-alignment between conducting layers and the contact hole
4
VLSI DESIGN
Contact CutContact cut – any gate: 2apart
Why? No contact to any part of the gate.
4
2
VLSI DESIGN
Contact Cut
Contact cut – contact cut: 2apart
Why? To prevent holes from merging.
2
VLSI DESIGN
Rules for CMOS layout
Similar to those for NMOS except No
1. Depletion implant
2. Buried contact
Additional rules
1. Definition of n-well area
2. Threshold implant of two types of transistor
3. Definition of source and drains regions for the NMOS and PMOS.
VLSI DESIGN
Rules for CMOS layout
To ensure the separation of the PMOS and NMOS devices,
n-well supporting PMOS is 6away from the active area of NMOS transistor.
Why?
Avoids overlap of the associated regions
n-welln+ 6
VLSI DESIGN
Rules for CMOS layout
2
2
N-well must completely surround the PMOS device’s active area by 2
VLSI DESIGN
Rules for CMOS layout
2
2
The threshold implant mask covers all n-well and surrounds the n-well by
VLSI DESIGN
Rules for CMOS layout
2
2
The p+ diffusion mask defines the areas to receive a p+ diffusion.
It is coincident with the threshold mask surrounding the PMOS transistor but excludes the n-well region to be connected to the supply.
VLSI DESIGN
Rules for CMOS layoutA p+ diffusion is required to effect the ground connection to the substrate. Thus mask also defines this substrate region. It surrounds the conducting material of this contact by
4
VLSI DESIGN
Rules for CMOS layout
Total contact areaTotal contact area == 24
Neither NMOS nor CMOS usually allow contact cuts to the gate of a transistor, because of the danger of etching away part of the gate