Date post: | 09-Feb-2017 |
Category: |
Engineering |
Upload: | shakeel-akram |
View: | 45 times |
Download: | 3 times |
4
Structure
• Three terminals • Base (lightly doped)• Emitter (heavily doped)• Collector (Moderately doped)
• Tow PN junctions • Base emitter • Base collector
5
Basic Transistor Operation
• Active region • BE forward bias • BC reverse bias
• Saturation region • BE forward bias • BC forward bias
• Active region • BE reverse bias • BC reverse bias
8
Transistor Characteristics and Parameters
• DC beta• DC current gain in Common Emitter • Less than 20 to greater than 200
• DC alpha • DC current gain in common base • 0.95 to 0.99
15
BJT as an Amplifier
• Linearly increasing the Amplitude• Current gain β = • As IB is very small Ic ≈ IE
VcE = Vcc – Ic Rc
𝑉𝑐𝑉𝑏Av =