Lecture 24 –Semiconductor Nanowires

EECS 598-002 Winter 2006Nanophotonics and Nano-scale Fabrication

P.C.Ku

2EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Size dependence (quantum confinement)

g(E) = Density of states

Eg E

g(E)

Eg E

g(E)

Eg E

g(E)

Eg E

g(E)

bulk sheet wire dot

3D 2D 1D 0D

3EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Why nanowires?

Usually easier to fabricate than QD’sMore variety of materials available.Large surface area may be useful for some applications.Can also tolerate large lattice mismatch along the interface.More easily to be made uniformNew physics: exciton diffusion, …

4EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Exciton diffusion

Science 273 (1996) 1351.

5EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

VLS growth

6EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

VLS growth (cont.)

Vapor supply combining with the catalyst (e.g. Au) to form an eutectic melt (at a much lower temperature compared to the melting point of the source materials.)

Supersaturation within the melting droplet leads to crystallization.

7EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Phase diagram for Si nanowires growth

8EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Nanowire heterostructure

J. Appl. Phys. 97 (2005) 114325.

9EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Atomically abrupt interface

Gas sourceMBE

Nano Lett 2 (2002)87.

10EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Si/SiGe

Wu et al., Nano Lett. 2 (2002) 83.

11EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Multishell structure

Nature 420 (2002) 57.

12EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

13EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Hybrid assembly

Langmuit-Blodgett method

Nano Lett3 (2003) 1255.

14EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Hybrid assembly

Flow assembly

Science 291 (2001) 630.

15EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

16EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

17EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Growth on patterned substrates

Adv. Mat. 17 (2005) 2098.

18EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Appl. Phys. A 80 (2005) 1133.

19EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Nanotubes

Other materials can also form tubular structures. Examples are BC2N and BC3 tubes, …

Carbon nanotubes Boron nitride nanotubes

20EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Rolling

Zigzag face Armchair face

21EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Cap structure

Nanotube descends from the fullerene (C60, C70, C78, …) family.

22EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

SWNT vs. MWNT

MWNT’s have more defectsMWNT’s are easier and less expensive to produce

SWNT facility (Carbon Nanotechnology Inc)

23EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Fabrication

Requires plasma state and metal catalystTo create the plasma state:

Arc discharge of a graphite rodLaser ablation of a graphite rodChemical vapor deposition

Metal catalyst: Cobalt, iron, or nickel keep the tube open and ensures the formation of hexagonal structure

To get SWNT, high pressure CO flow has been developed.Major difficulties:

Impurity can be removed from acid treatment can add other impuritiesDifferent tubes produced at the same time electrical heating can remove metallic MWNT; however, no way for SWNT.

30V, 100A

He

24EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Electronic properties – Carbon tubes

SWNT: Either metal or semiconductor:Armchair : metaln-m = 3k (k ≠ 0) : semiconductor with tiny Eg

all others : semiconductor with Eg inversely proportional to tube diameter

MWNT: similar to SWNT due to weak interaction between walls

25EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

C vs BN nanotubes

BN tubes are electrically uniformAll BN nanotubes are semiconductors and have same Egregardless of tube diameter, chirality, and number of walls.

Bulk BN is insulator cannot be used as an electrode

Bulk BN

Tungstun electrodeanode

Cu as cathode

He 650 torr

26EECS 598-002 Nanophotonics and Nanoscale Fabrication by P.C.Ku

Review article

Law et al., Ann. Rep. Mat. Res. 34 (2004) 83.