Materials, devices and applications of Si-based ...nanosioe.ee.ntu.edu.tw/Download/Others/03.pdf ·...

S. Coffa, Si Optoelectronics, Bioelectonics and Nano-Organics, Corporate R&D, ESSDERC 2002, Florence, September 22th, 2002

Materials, devices and applications Materials, devices and applications of of SiSi--based based optoelectronicsoptoelectronics

S. Coffa

Si Optoelectronics, bioelectronics and nano-organicsCorporate R&D, STMicroelectronics, Catania


OutlineOutlineAims

Scientific challenges, targets and market perspectives ofSi-based optoelectronics

ApplicationsFabrication, performances and applications of Si-based optical devicesIntegrated Si-based optoelectronics as enabling technology in multifunctional devices

• Biosensors• Novel optical memories and molecular switches

Conclusions

STMicroelectronics

Scientific challenges, targets and market perspectives of Si-based optoelectonics


Science and Technology for Fun and Profit


OPTICAL SMCOPTICAL SMCvs TOTAL SMC DEVICESTOTAL SMC DEVICESWW REVENUE and FORECAST 99-05

($M)

Optical Semicond. Devices MS

4.1% in 99 5.6% in 05


OPTICAL SEMICONDUCTOR PF & Supplier 2000

OptoelectronicsTotal $9.8B

Laser35%

Couplers13%

Other devices

26%

Image sensors

15%

Others & infrared

11%

Source : WSTSStructure Sem. OptoElec PF Structure Sem. OptoElec PF TOP Five SUPPLIERS Ranking

($M)

TOP Five SUPPLIERS Ranking Source : Gartner Dataquest Sept 01

Opto is a fast-growing market driven by communication and consumer! Total Opt.Smc. 2000 $ 10.69B


NEW OPPORTUNITIES FOR OPTOELECTRONIC

Electronic Market growth by SegmentElectronic Market growth by Segment

Communication Segmentwill be the best future “opportunity” in electronic market.

CAGR 2000-2006 in %

11%

8%

7%

5%

8%

7,5%

Communication

Automotive

PC

Consumer

Industrial &Military

TotalTOT 2000 $ 975B

“fiberfiber--optic system and optical optic system and optical interconnect technologies”interconnect technologies” as one of the strategic area for future significant investiment….

(Emerging Technologies: Survival Strategies

in 2001, Dataquest , May 2001)

Source : WSTSSource : WSTS

Driving force: Internet and Portability


A great future for Integrated Optoelectronic devices

Integrated Optoelectronics Component Growth :<1% in 00<1% in 00 to 37% in 2009to 37% in 2009

Source : ElectronicCast Corp, May 01


DEVELOPMENT OF INTEGRATED PHOTONIC DEVICES

Active Components + Passive Components+ electronics

on the Same Chipon the Same Chipusing PLANAR TECHNOLOGYusing PLANAR TECHNOLOGY

Manufactured with Si Electronic IC technologies

Si-based materials and processes for optical devices

STMicroelectronics

Fabrication, performances and applications of Si-based optical devices

See also: D21.3 Quantum dot materials and devices for light emission in Si by M.E. Castagna et al. DP.28 Integrated Si-based Opto-couplers: a novel approach to galvanic insulation by A. Alessandria et. al


Si-based light emitting devices (LEDs)

(off)

Gate dielectric:

• Thermally grown SiO2 layer (620 A)

•PECVD Silicon Rich Oxide (SRO, 1000 A)

Er introduced by ion implantationPost implantation anneal: 800-1100 C (on)


World record efficiency for Si-based LEDs

• We have fabricated the world-record Si-based LED using Si processing •The efficiency (10%) is similar to that of state-of-the art

LED using III-V semiconductors


Charge transport in an Er doped SiO2 film: Fowler-Nordheim

1.E-23

1.E-20

1.E-17

1.E-14

1.E-11

0.E+00 1.E-07 2.E-07 3.E-07 4.E-071/E (cm/V)

J/E

2 (mA

/V2 )

SiO2

SiO2+ErFOWLER-NORDHEIM

EB

eAEJ−

= 2QBD=13.2 C/cm2 ( undoped SiO2)

QBD=30 C/cm2 ( Er-doped SiO2)

J= 0.04 A/cm2


Devices emitting at different wavelengths

2F5/2

2F3/2

1088

nm

548

nm

1540

nm57

0 nm

5d

530

nm

2F7/2

2F5/2

983

nm

Yb3+

Ion implantation: Pr, Ce, Tb e Yb:- fluence: 1.1015 cm-2

- implantation energy: 50 keV

TERBIUM

CERIUM


Rare earth doped SRO films

EC

Si

SiO2 Si nanostructuresEr

EV4I13/2

Si nanostructure 4I15/2

Er ion

•SRO films deposited by PECVD•Rare earth ion incorporation

by ion implantation


ElectroElectro--luminescence from Erluminescence from Er--doped SRO filmsdoped SRO films

Annealing temperature: 800oC

0

1000

2000

3000

4000

5000

1470 1520 1570WAVELENGTH (nm)

EL

Inte

nsity

( µV

)

SRO (n=1.70) + ErSRO (n=1.64) + ErSRO (n=1.61) + Er SRO: best

compromise between efficiency and

stability

1max +=

JJELEL

στστ Annealing temperature 800C

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

CURRENT (mA)

EM

ITT

ED

PO

WE

R(m

W)

SiO2+ErSRO (n=1.70)+ErSRO (n=1.64)+ErSRO (n=1.61)+Er

σ(1.61)=8.10-16 cm2

σ(1.70)=6.10-17 cm2

QBD=1000 C/cm2


Infrared detectors using Si/SiGe multilayers


1.54 um absorption from of Ge films on Si


Light transmission in integrated waveguides

Si

SiON SiONSiON

SiO2

a) SiON waveguides

Si

Polimer PolimerPolimer

SiO2

Light trasmitted through 2 cm long waveguides

b) polymer waveguides


Applications of Si-based optoelectronicsPower devices with integrated galvanic insulation

Optocouplers(Functional isolation)

•Digital logic interfaces•Level shifting•Data Transmission•Telecommunications

Power optoisolation(Safety isolation)

•Motor control•Power supplies•Solid state relays•Power meters

CIRCUITB

CIRCUIT A POWER

DEVICEOPTO

INSULATOR


Galvanic insulation using Galvanic insulation using SiSi--based based optoelectonicsoptoelectonics

•Low cost SOI•Er-doped Si LEDs•Schottky detectors•SiON waveguides


Optical transmission demonstrator

Devices

• Erbium-doped LEDs

• Schottky photodetectors

• SiON waveguidesElectrical testing

• LED quantum efficiency

• photodetectors responsivity

• waveguides losses

• system efficiency

• channels decoupling

Process rules

Layout rules

A A’

Critical process step

• Erbium implantation for emitting diodes

• SiON etching for waveguides

• Silicide formation for photodetectors diodes


Low cost SOI for galvanic isolation

SEM top view of P-Sistructure

Silic

on

HF/IPA/H2O

6” wafer

(+) Si + 2H2O + 4h+ = SiO2 + 4H+

SiO2 + 6HF = SiF62- + 2H2O + 2H+

(-) H+ + e- = ½ H2

P-Si

Porous Si formation+ -


Selective formation of buried porous Si films for low cost SOI

Si p-

Si p+

Si p-

Si poroso


Electical and structural characterisation of oxidised porous Si layers

Poli n+

Oxidised porous Si

p-type Si

Breakdown VoltageY208080 wafer 03

-6.0E-05

-4.0E-05

-2.0E-05

0.0E+00

2.0E-05

4.0E-05

6.0E-05

-800 -600 -400 -200 0 200 400 600 800Voltage [V]

Cur

rent

[A]

grande medio piccolo


Schottky photodetetors: structural and electrical characterisations

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

0 2 4 6 8 10 12 14 16

Voltage [V]C

urre

nt [

A]

darkambient lightweak white lightintens e near infrared light

Pt silicide

Field oxideN+ contact

N- well

P+ guard ring

X-SEM

X-TEM

190 Å


A revolutionary application Si-based optoelectronics

On-chip optical interconnects

Remove RC bottleneck and simplify design in future Si CMOS ICsOptical clock transmission guaranteed by fully integrated optical devicessuch as Si-based optical amplifies and lasersDevelopment of low cost components for DWDM optical transmission


Design and fabrication of photonic bandgap materials


Structures for photonic bandgap materials (1/2)

The silicon “Temple” Valley

Using these structure full control of light flux can be achievedand ultra-compact optical devices can be fabricated


Structures for photonic bandgap materials (2/2) Use of advanced optical lithography instead of e-beam lithography

SiO2

Si

A light splitter using 0.18 um holes in Si


Optical gain materials for lasers and optical amplifiers

Si

SiO2

SRO+Er

Pump light

Prototypes available by Q2 2003


Dielectric Mirrors and Resonant Cavities

SiO2

Si3N4

0102030405060708090

100

870 1070 1270 1470 1670 1870 2070 2270 2470

WAVELENGTH (nm)

RE

FL

EC

TA

NC

E (

%)

SiO2/SiN CAVITYSiO2/Si CAVITY

Si

SiO2

2

11

11

0 )(

+−

= −+

−+

sJL

JH

sJL

JH

nnnnnn

R λ QSiO2/SiN=20QSiO2/Si=120

STMicroelectronics

Integrated Si-based optoelectronics as enabling technology in multifunctional devices

I. Biosensors


Silicon technologies versus biotechnologies

When biology meets silicon technology……

……an entirely new world is disclosed

Using Si Technologies for exploring and understanding complex biological systems (biosensors, DNA chip, protein chip, etc.)

Biomimic: learning from nature and mimic behavior in Si chips

Hybrid approaches: operations in the biological systems, inputs and outputsfrom/in Si-based devices


The role of optics in biosystems analysis

Various biological samples can be marked by fluorescent chromophoresand observed by fluorescence microscope

Photons are used to exchange informations between biological systems and outside world

Many optical functions (light sources, light detectors, filters etc. ) are used

Example: analysis of a DNA microarray


Innovative silicon technologies meet biology

Optical and mechanical functions bridge the gap between Si technology and biological worldWe are able to integrate these functions with Si electronic functions on the same chip

Si electronics

Si optoelectronics

Si mechanicsBiological systems


Gene Expression ProfilingGene Expression Profiling

It is the study of the patterns of gene It is the study of the patterns of gene expression in various environmental expression in various environmental circumstancescircumstances

Parallel genetic analysis allow to understand:Parallel genetic analysis allow to understand:Candidate genes for each disease (comparing Candidate genes for each disease (comparing

healthy and sick cells)healthy and sick cells)

Cellular differentiation (comparing different Cellular differentiation (comparing different tissues or the same one in different stage of tissues or the same one in different stage of development)development)

How organisms function in response to exposure How organisms function in response to exposure to environmental toxicants or other stimuli to environmental toxicants or other stimuli (elucidating the molecular mechanism that underlie (elucidating the molecular mechanism that underlie them)them)


BiosensorBiosensor

DNA DNA ––CHIPS TECHNOLOGIESCHIPS TECHNOLOGIES

DNADNA--microarraymicroarray OligonucleotideOligonucleotide--microarraymicroarray

AffimetrixStanford, Nanogen


Active Biochip: technological steps implementation

Target: integration of DNA-microarray & Oligonucleotide-microarray on either Silicon or Si-compatible materials

Aim: to allows real time analysis for both clinical &diagnostic targets

Methods: an innovative trasduction techniques coupled to

an electronic integrated system for signals reading & elaboration


DNA grafting on a Si chip

Functional groups Si-(CH2)3NH2 on the surface

Reaction with aldhyde terminated DNA


Experimental results: DNA grafting on thin films on Si

Si

SiO2

Si

Si3N4

Si

Porous Si

Idroxilation (NaOH)Silanisation (APS)DNA spottingDNA grafting


DNA chipsDNA chips

DNA immobilization in materials compatible with silicon technology

DNA spots on silanised SiO2/Si

2D AFM analysis area not spotted 2D AFM analysis area DNA spotted


Porous Si optical cavities in DNA sensors applications

A reversible peak shift is induced by gas or organic/biological molecules in the pore of the material

Porous Si optical cavity


Experimental demonstration of sensing using porous Si cavities

•A peak shift is measured (green line) when biological or organic material is introduced in the pore of the cavity

•The effect is fully reversible


Patterning and pore wall oxidation of porous Si for DNA sensors

Using proper oxidation steps the pore structures is maintained

STMicroelectronics

Integrated Si-based optoelectronics as enabling technology in multifunctional devices

II. Novel optical memories and molecular switches


MEMORIES TECHNOLOGY OVERWIEWMEMORIES TECHNOLOGY OVERWIEW

CD\DVD:US$ 10bn

Chips:US$ 30bn

HDDs:US$ 25bn = $65bn!= $65bn!+ +TOTAL M. TOTAL M.

Market =Market =

Source : WestLB Panmure, Jan.2002


THE SEMICONDUCTOR MEMORIES MARKET THE SEMICONDUCTOR MEMORIES MARKET

Source : WestLB Panmure, Jan.2002


THE NEW NOMADIC SCENARIOTHE NEW NOMADIC SCENARIO

Nomadic era

Next generation deviceMulti-function

Broad band

High data rate

In 2003 data storage will over code storage

Need of more data storage capacity


Information storage: the search for new solutions Information storage: the search for new solutions


HDD Technology: Advanced storage roadmapHDD Technology: Advanced storage roadmap


HDD SMALL FORM FACTORHDD SMALL FORM FACTOR

(with moving parts) (with no moving parts)

Stacked NAND Flash+ controller


DVD/CD TECHNOLOGY: LASER, SUPPORT, STANDARDSDVD/CD TECHNOLOGY: LASER, SUPPORT, STANDARDS


ORGANIC COMPOUNDSORGANIC COMPOUNDS--based MATERIALS for Optical Memoriesbased MATERIALS for Optical Memories

SpirobenzopyransSpirobenzopyrans

Bit patterns read by near IR-Microscopy: (a) first layers; (b) second layer. The bit interval is 5 µm and the layers distance is 70 µm. Write by 2 photons.

Chem.Rev., 2000, 100, 1777


Biological molecules integrated within a Si chip

Novel optical memory and switches using photochromic biological molecules

hν

Photons allow communication between Si and the protein

•A red photon is used to change the colour•A blue photon can be used to switch back or to interrogate the status


Bacteriorhodopsin photocycle

(yellow)

(Purple)


Proteins with a simpler photo-cycle (e.g. Euglena-rhodopsin, GFP)

•Fast switch between the states•Single photon switch•High density•Infinite cicling

Advantages for optical memories

Special features•Superior performances compared to organic photochromic materials•Use of integrated Si optics•Protein properties can be changed using biotechnology


PROTEINSPROTEINS--based MATERIALS for Optical Memoriesbased MATERIALS for Optical Memories

NESTNEST--INFM patentINFM patent

ModifiedModified--GFP GFP (E(E22GFP)GFP)


Experimental determination of Rodhopsin Photo-cycle

(yellow state )M

bR (purple state)

Photocycle promoted by a 10 ns laser pulse


Formation of the M state

300 350 400 450 500 550 600 650 700-0,030

-0,025

-0,020

-0,015

-0,010

-0,005

0,000

0,005

0,010

0,015

23ma0209

2 µs 7 µs 20 µs 80 µs

∆A

W avelength / nm

Bacterio-rodhopsin in a PAA film


50x

STRUCTURAL PERFORMANCES Active bR filmsSTRUCTURAL PERFORMANCES Active bR filmsMemoriesMemories

50x

Optical micrography bR film on glass (casting)

Optical micrography bR film on glass (casting) + 5% glycerol


Combine integrated optics and photochromic moleculesto develop innovative devices


Integration of the protein films

Si

SiO2

SiON

Protein film (pf)

nSiON=npf (no reflection, only absorption)

Use of Hydrophilic/hydrophobic surfaces for selective locationof the protein film


MemoriesMemories

Integration of the protein filmIntegration of the protein film

100x

Proteinfilm

SiON

Top view


Foreseen use of the photochromic filmsForeseen use of the photochromic films

High resolution memories through a SNOM Approach

3D data and hologram storing using DVD-like approach


STORAGE TECHNOLOGY PARAMETERS STORAGE TECHNOLOGY PARAMETERS

Optical

1-10 ps1-10ps

No/YesNo>10E5>10E5

No

n.a.

YesYes


ConclusionsConclusions

State of the art of Si-based optical devices have been fabricated

Marketable applications of integrated Si-based optoelectronic circuits

are foreseen

Integrated Si-based optoelectronics is a suitable enabling technology

for several multifunctional devices


The work described has been carried out within:

Advanced microfabrication processesElectro-optic characterisation of materials and devicesMolecular biology lab.DNA Chips prototypingBiological films for various applicationsEtc.

STinnovation Labsa) ST Innovation Lab

b) ST 6 inches pilot lineHere, novel dedicated processes for photonic devices have been implemented on existing equipments for Si ICs fabrication


The work described has been carried out by:

Si optoelectronics, bioelectronicsand nano-organics group (50 people)

Corporate R&D, STMicroelectronics

Pilot line technologies and New Power Device Structure groups (10 people)

DSG R&D, STMicroelectronics

Established collaborations:CNR-IMM, CNR-IBFSNC, CIB Trieste

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