© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

• Sensitive Gate Trigger Current

• Blocking Voltage to 600 V• Glass Passivated Surface

for Reliability and Uniformity

• Surface Mount Package• These Devices are

Pb−Free and are RoHS Compliant

Features

PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing.

Description

MCR08B, MCR08M

Functional Diagram

Additional Information

SamplesResourcesDatasheet

Pin Out

Pb

1 2 3

4

K

G

A

RoHS

© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)(−40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)

MCR08BMCR08M

VDRM, VRRM

200600 V

On-State RMS Current (All Conduction Angles; TC = 80°C) IT (RMS) 0.8 A

Peak Non-Repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 0.4 A²sec

Forward Peak Gate Power (TC = 80°C, t = 1.0 µs) PGM 0.1 W

Average Gate Power (t = 8.3 ms, TC = 80°C) PGM (AV) 0.01 W

Operating Junction Temperature Range TJ -40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Maximum Ratings (TJ = 25°C unless otherwise noted)

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC) PCB Mounted per Figure 1 R8JC 2.2 °C/W

Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Compound R8JT 25 °C/W

Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL 260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1 kΩ

TJ = 25°C IDRM,

IRRM

- - 10 μA

TJ = 125°C - - 200 mA

Dynamic Characteristics

Characteristic Symbol Min Typ Max Unit

Critical Rate-of-Rise of Off State Voltage(Vpk = Rated VDRM, TC = 110°C, RGK = 1 kΩ, Exponential Method) dv/dt 10 − − V/µs

Critical Rate of Rise of On−State Current(IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA di/dt − − 50 A/ms

Characteristic Symbol Min Typ Max Unit

Peak Forward On-State Voltage (Note 2) (IT = 1.0 A Peak) VTM − − 1.7 V

Gate Trigger Current (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 Ω) IGT − − 200 mA

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) IH − − 5.0 mA

Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) VGT − − 0.8 V

Turn−On Time (VAK = 12 Vdc, ITM = 5 Adc, IGT = 5 mA) tgt − 1.25 − µs

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.3. RGK = 1000 Q is included in measurement.4. RGK is not included in measurement.

© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

Voltage Current Characteristic of SCR

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IH Holding Current

Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223

+Current

+Voltage

VTM

IH

on stateIRRM at VRRM

IDRM at VDRM

Forward Blocking Region(Off State)Reverse Avalanche Region

Anode-

Forward Blocking Region(Off State)

Anode+

0.0792.0

0.0792.0

0.0591.5

0.0912.3

0.0912.3

0.47212.0

0.0962.44

0.98425.0

0.2446.2

0.0591.5

0.0591.5

0.0962.44

0.0962.44

0.0591.5

0.0591.5

0.153.8

inchesmm

Board mounted vertically cinch 8840 edge connector. Board Thickness = 65Mil.Foil Thickness = 2.5Mil.Material: G10 Fiberglass Base Epoxy

© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

vT

I T

10

1.0

0.1

0.014.01.00 2.03 .0

TYPICAL AT TJ = 110ϒCMAX AT TJ = 110ϒCMAX AT TJ = 25ϒC

I

110

0.50.30.20.10

100

90

80

60

50

40

30

200.4

70dc

180°

α = 30°

60° 90°

120°

αα = CONDUCTION

ANGLE

50 OR 60 Hz HALFWAVE

T A, M

AXI

MU

M A

LLO

WA

BLE

AM

BIEN

T TE

MPE

RATU

RE (

C)

°

Figure 2. On-State Characteristics

Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature

Figure 3. Junction to Ambient Thermal Resistance vs Copper Tab Area

Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature

180°

110

100

90

80

60

50

40

30

20

70

IT(AV)

0.50.40.30.20.10

T A, M

AXI

MU

M A

LLO

WA

BLE

AM

BIEN

T TE

MPE

RATU

RE (

C)

°

60°

120°

1.0 cm2 FOIL, 50 OR60 Hz HALFWAVE

dc

90°

α = 30°

αα = CONDUCTION

ANGLE

PAD AREA = 4.0 cm2, 50OR 60 Hz HALFWAVE

T A, M

AXI

MU

M A

LLO

WA

BLE

AM

BIEN

T TE

MPE

RATU

RE (

C)

°

110

100

90

80

60

50

70

IT(AV)

0.50.40.30.20.10

60°

dc

180°

120°

αα = CONDUCTION

ANGLE

90°

α = 30°

Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: Anode Tab

110

85

IT(AV)

0.50.40.30.20.10

50 OR 60 Hz HALFWAVE

T (ta

b), M

AXI

MU

M A

LLO

WA

BLE

TAB

TEM

PERA

TURE

( C

)°

60°

90°

180°

120°

αα = CONDUCTION

ANGLE

dc

α = 30°

© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

MA

XIM

UM

AVE

RAG

E PO

WER

P

IT(AV)

1.0

0.50.30.20.10

0.9

0.8

0.7

0.5

0.4

0.3

0.2

0.1

0.4

0.6

dc180°

α = 30°

60°

(AV)

,DIS

SIPA

TIO

N (W

ATTS

)

0

αα = CONDUCTION

ANGLE

90°

120°

Figure 8. Power Dissipation Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board

r T, T

RAN

SIEN

T TH

ERM

AL

RESI

STA

NCE

NO

RMA

LIZE

D

1.0

0.1

0.011000.10.0001

t, TIME (SECONDS)

0.0010 .011 .0 10

Figure 10. Typical Gate Trigger Voltage vs Junction Temperature

Figure 12. Typical Range of VGT versus Measured IGT

Figure 11. Typical Normalized Holding Current vs Junction Temperature

Figure 13. Typical Gate Trigger Current vs Junction Temperature

V GT

, GAT

E TR

IGG

ER V

OLT

AG

E (V

OLT

S)

TJ, JUNCTION TEMPERA TURE, (ϒC)

0.7

0.6

0.5

0.4

8020-40- 20 04 06 0 1100.3

VAK = 12 VRL = 100

0.7

1000100.1

IGT, GATE TRIGGER CURRENT ( A)

0010.1

VG

T, G

ATE

TRIG

GER

VO

LTA

GE

(VO

LTS)

0.65

0.6

0.55

0.5

0.45

0.4

0.35

0.3

VAK = 12 VRL = 100 TJ = 25ϒC

© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

HO

LDIN

G C

URR

ENT

(mA

)I

, H

100

1.0

0.110001.0

R

10 100 10,000 100,000

10 IGT = 48 A

TJ = 25ϒC

IGT = 7 A

Figure 14. Holding Current Range vs Gate-Cathode Resistance Figure 15. Exponential Static dv/dt vs. Junction Temperature and Gate-Cathode Termination Resistance

STA

TIC

dv/d

t (V/

S)

μ

10000

1000

100

10

1.0

0.110 100 1000 10,000 100,000

RGK

50°

75°

125°

5000

500

50

5.0

0.5

110°

TJ = 25°

Vpk = 400 V

Figure 16. Exponential Static dv/dt vs Peak Voltage and Gate-Cathode Termination Resistance

Figure 18. Exponential Static dv/dt vs Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity

Figure 17. Exponential Static dv/dt vs Gate-Cathode Capacitance and Resistance

10000

100

10,00010 100 10001.0

RGK

STA

TIC

dv/d

t (V/

S)

μ

500 V

100 V1000

500 400 V

TJ = 110°C

50 V

50

10

5.0

200 V

300 V

STA

TIC

dv/d

t (V/

S)

�

100 1000 10,000 100,00010

10000

100

1.0

1000

500

50

10

5.0

IGT = 5 A

IGT = 70 A

IGT = 35 A

IGT = 15 A

STA

TIC

dv/d

t (V/

S)

μ

CGK

0.11 .0 10 1000.01

10000

100

1.0

1000

500

50

10

5.0

TJ = 110°C400 V (PEAK)

RGK = 10 k

RGK = 100

RGK = 1.0 k

© 2020 Littelfuse, Inc.Specifications are subject to change without notice.

Revised: BA.08/26/20

ThyristorsSurface Mount – 600V - 800V > MCR08B, MCR08M

Dimensions Soldering Footprint

Part Marking SystemDimInches Millimeters

Min Nom Max Min Nom Max

A 1.50 1.63 1.75 0.060 0.064 0.068

A1 0.02 0.06 0.10 0.001 0.002 0.004

b 0.60 0.75 0.89 0.024 0.030 0.035

b1 2.90 3.06 3.20 0.115 0.121 0.126

c 0.24 0.29 0.35 0.009 0.012 0.014

D 6.30 6.50 6.70 0.249 0.256 0.263

E 3.30 3.50 3.70 0.130 0.138 0.145

e 2.20 2.30 2.40 0.087 0.091 0.094

e1 0.85 0.94 1.05 0.033 0.037 0.041

L1 1.50 1.75 2.00 0.060 0.069 0.078

HE 6.70 7.00 7.30 0.264 0.276 0.287

9 0° − 10° 0° − 10°

Pin Assignment

1 Cathode

2 Anode

3 Gate

4 Anode

Ordering Information

Device Package Shipping

MCR08BT1G SOT-223(Pb-Free) 1000/Tape & Reel

MCR08MT1G SOT-223(Pb-Free) 1000/Tape & Reel

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics

A1

b1

D

E

b

ee1

4

12 3

0.08 (0003 )

AC

L1

HE

1. 50.059

mminchesSCALE 6 :1

3. 80.15

2. 00.079

6. 30.248

2. 30.091

2. 30.091

2. 00.079

1

4

AYWCR08x

SOT-223Case 318E

Style 10 1

CR08c = Device Codex = B or MA = Assembly LocationY = Year

W = Work Week■ = Pb-Free Packaging

Note: Microdot may be in either location1. Dimensions and Tolerancing per Ansi Y14.5M. 1982.2. Controlling Dimension: Inch.