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Modeling of SiGe material for ultra-scaled CMOS 2 device … · 2008. 12. 4. · Ge fraction Alloy...

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www.c2s2.org 2010 MSD Annual Review Modeling of SiGe material for ultra-scaled CMOS device applications A. Paul, S. R. Mehrotra, Z. Jiang, M. Luisier and G. Klimeck Purdue University and NCN 4 2 3 1 5 6 9 8 7 10 11 12 Why SiGe material ? Electronic Structure : VCA method Transport in Core/Shell SiGe/Si – TB VCA Random Alloy Treatment (RAT) SiGe bond length benchmarking Bulk SiGe bandedges using supercell Alloy Scattering Alloy Scattering Potentials from RAT Transport in Alloy: Green’s Function Comparison of Transmission Transmission to terminal characteristics Conclusion and Future Work

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$Page 1: Modeling of SiGe material for ultra-scaled CMOS 2 device … · 2008. 12. 4. · Ge fraction Alloy scattering parameter(AE) not a 'constant' with composition !!! Tri-modal distribution$

www.c2s2.org

2010 MSD Annual Review

Modeling of SiGe material for ultra-scaled CMOS device applications

A. Paul, S. R. Mehrotra, Z. Jiang, M. Luisier and G. Klimeck Purdue University and NCN

4

2 3 1

5 6

9 8 7

10 11 12

Why SiGe material ? Electronic Structure : VCA method Transport in Core/Shell SiGe/Si – TB VCA

Random Alloy Treatment (RAT) SiGe bond length benchmarking Bulk SiGe bandedges using supercell

Alloy Scattering Alloy Scattering Potentials from RAT Transport in Alloy: Green’s Function

Comparison of Transmission Transmission to terminal characteristics Conclusion and Future Work

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