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Market Focus ECOC 2013 Ed Murphy Optical Integration for 100G Interfaces
Market Focus
ECOC 2013
Ed Murphy
Optical Integration for 100G Interfaces
© 2013 JDS Uniphase Corporation 2
Evolving 100G Component and Modules
Platform Technologies
10G – historical perspective
100G Line side
100G Client side
Topics
© 2013 JDS Uniphase Corporation 3
Optical Transmission Transition
• Once in a decade change
Evolution of optical technology
• 1-3 year evolution becoming clear
- LH, Metro: Line card (discrete component) solutions CFP, CFP2
- Client: CFP CFP2, CFP4, QSFP28
- iTLA/LN modulator monolithic InP devices
- Higher Baud rates
- Multi-component integration
Introductory remarks
© 2013 JDS Uniphase Corporation 4
Lithium Niobate
(LiNbO3)
Modulators
Gallium Arsenide
(GaAs)
VCSELS
Silica on Silicon
Passive Lightguide
Circuits (PLC) AWGs
Coherent Mixers
Pol Mux
Platforms for Photonic Integration
Indium Phosphide
(InP)
Lasers
Modulators
Receivers
4
© 2013 JDS Uniphase Corporation 5
Tunable XFP functional integration drives:
• 85% smaller size
• 75% less power consumption
• Cost reduction
JDSU T-XFP technology replaces:
• Fixed XFP’s in 2009
• Metro/Regional transponders in CQ3 2010
• Long Haul transponders in CQ1 2011
Shipped >>100,000 Tunable XFP’s
10G History
5
Tunable XFP 300 PIN MSA
Discrete Tunable Laser and Modulator
Before Now
ILMZ Chip
MZM
SGDBR laser
SOA
© 2013 JDS Uniphase Corporation 6
10G Tunable – Further transition
Smaller Size & Lower Power Dissipation
T-XFP
Zero chirp, PiN
• Tunable market consolidating on T-XFP in near term
• The smallest, lowest power dissipation (T-SFP+) will
be most widely adopted over longer term
T-XFP
High Power
Negative chirp, APD
T-XFP
Negative chirp, APD
T-SFP+ 2W
NC, APD, Limiting
T-SFP+ 2W
NC, APD, Linear
T-SFP+ 1.5W
NC, APD, Limiting
T-SFP+ 1.5W
NC, APD, Linear
T-SFP+ 2W E-temp
NC, APD, Limiting
Monolithic Integration for
100G Line Side Transmitters
© 2013 JDS Uniphase Corporation 8
Monolithic Tunable Laser 100G Coherent Transmission
SGDBR Laser Design
• Benefits: cost, monolithic integration
• BUT: linewidth broadening due to current injection
Requirements for Coherent Systems
• Narrow Spectral Linewidth
- QPSK – < 500KHz
- 16QAM – < 300KHz
• High output power
- > +16dBm
• Low power dissipation
DP-QPSK 16-QAM
Front
Mirror Gain Phase
Rear
Mirror
SG-DBR Laser
Amplifier Modulator
© 2013 JDS Uniphase Corporation 9
• Thin-film micro-heaters for mirror and phase sections
• Thermal tuning eliminates tuning-induced loss which degrades
linewidth and power conversion efficiency
• Thermal isolation between thermally tuned sections and substrate for
reduced power dissipation
Thermally tuned SGDBR Laser
Front
Mirror Gain Phase Back
Mirror SOA
microheaters
InGaAsP
MQW active
regions
Q1.3 tuning
waveguide
Sampled
gratings Thermal
isolation
Light
output
InP substrate
© 2013 JDS Uniphase Corporation 10
Thermally Tuned Laser Efficiency
Significantly improved slope efficiency compared to previous generation current-injection device
0
5
10
15
20
25
0 20 40 60 80 100 120
Gain Current (mA)
SO
A R
eve
rse
Ph
oto
cu
rre
nt (m
A)
↑
Carrier injection
tuned SGDBR,
Thermally tuned SGDBR
© 2013 JDS Uniphase Corporation 11
0
0.1
0.2
0.3
0.4
0.5
0.6
191000 192000 193000 194000 195000 196000Optical Frequency (GHz)
Lin
ew
idth
(M
Hz).
25
30
35
40
45
50
55
Sid
em
od
e S
up
pre
ssio
n R
atio
(d
B).
Thermally Tuned Laser: Linewidth and SMSR
<300kHz worst case linewidth and >40dB SMSR
© 2013 JDS Uniphase Corporation 12
100G Integration for Size and Power reduction
Smaller size, lower power dissipation
CFP
ASIC inside
CFP2
ASIC outside
OIF Transponder
5” x 7”
100W
InP
Laser/Modulator Compact PLC Rx
© 2013 JDS Uniphase Corporation 13
Packaging options for InP I/Q modulators
TEC
TEC
TEC
C-band laser +SOA/VOA DP-IQ modulator
TEC
Micro
optics pol
MUX and
power
monitors
+ VOA
Locker &
power
monitor +
Coupling
optics
Micro optics
pol MUX
and power
monitors
Micro optics
pol MUX +
Locker +
Power
monitors
Locker &
power
monitor +
Coupling
optics
Performance, cost, power and size advantages
to monolithic integration
Separate
packages
Co-
packaging
Monolithic
© 2013 JDS Uniphase Corporation 14
InP MZ for 28Gb/s OOK, 100Gb/s DP-QPSK, 200Gb/s QAM
2D Normalized output power, dB 1.4 mm MZ
MZM = 1.4mm long; Vpp = 0.9V/arm
30Gb/s Electrical Input
Traveling wave electrode design; shallow ridge technology
Vpp = 1.8V/side for QPSK
© 2013 JDS Uniphase Corporation 15
Lithium Niobate Nested MZ Modulators are used in of the most 40G and 100G coherent systems today
• Pure Phase Modulation
• Highest Bandwidth Available
• Low voltage operation (< 3V)
Future
• Will continue to enable very high performance links
• Higher baud rates for 200G applications
- Lower Density constellations for improved OSNR (longer reach than QAM)
43 Gbaud 8PSK
64 Gbaud QPSK
Lithium Niobate Technology Evolution
Hybrid Integration for 100G
Client Side Interfaces
© 2013 JDS Uniphase Corporation 17
4 EML devices on carriers
AWG MUX with integrated taps
Integrated PD monitor array
4x25G PIN array bonded on
carrier with quad TIA
PLC de-multiplexer
• High ∆n AWG design
100G LR4 TOSA
100G LR4 ROSA
Hybrid Integration for client optics
Compact solution compatible with CFP2/CFP4/QSFP28
© 2013 JDS Uniphase Corporation 18
Meets LR4 and ER4 requirements
Driver power dissipation ~200 mW/channel
100G TOSA EML based TOSA performance
(a) (b)100G TOSA @ 28Gb/s PRBS 231-1
ER>5dB, MM>40%, Vpp=1.2V ER>9dB, MM>40%, Vpp=1.5V
© 2013 JDS Uniphase Corporation 19
Support line rates of 103.125 Gbps or 111.81 Gbps
Operating temperature range of up to -5ºC to 70ºC
Low power dissipation
MM> 15% at 27.9525Gbps/Channel
100G LR4 CFP2 Transceiver Module
© 2013 JDS Uniphase Corporation 20
Optical Integration has enabled cost, size, power savings for tunable 10G interfaces
We are beginning to see a migration to integrated solutions in 100G applications which are necessary to enable CFP, CFP2, CFP4, QSFP28
Optimized solutions require a mix of monolithic and hybrid integration
Summary
