PNPI in LHCb PNPI in LHCb

A.Vorobyov

HEPD Scientific Board meeting, December 26,2003

Status report for 2003

LHCb MUON SYSTEMLHCb MUON SYSTEM Goals:Goals: 1. Muon identification1. Muon identification 2.Trigger with Pt cut at >1.2 Gev/c2.Trigger with Pt cut at >1.2 Gev/c

Strategy:Strategy: 1. Stand-alone mode 1. Stand-alone mode ( using information only from Muon ( using information only from Muon

Stations)Stations) 2. Pad structure 2. Pad structure ( 24x4 cm2, 12x2cm2, 6x1cm2, 3x0.5cm2 )( 24x4 cm2, 12x2cm2, 6x1cm2, 3x0.5cm2 ) 1.1. M.Borkovsky,A.Tsaregorodtsev,A.VorobyovM.Borkovsky,A.Tsaregorodtsev,A.Vorobyov The LHCb Level-0 Muon Trigger, LHCb 98-02The LHCb Level-0 Muon Trigger, LHCb 98-02

Background:Background: 10*3- 10*5 charged particles/cm2xsec10*3- 10*5 charged particles/cm2xsec 2.2. N,Sagidova, A.Tsaregorodtsev, A.VorobyovN,Sagidova, A.Tsaregorodtsev, A.Vorobyov GCALOR Studies of Background in LHCb Muon ChambersGCALOR Studies of Background in LHCb Muon Chambers LHCb 98-059LHCb 98-059

LHCb MUON SYSTEMLHCb MUON SYSTEM

Detector technology:Detector technology: Modest space resolution (pad size)Modest space resolution (pad size)

High time resolution ( <3ns rms)High time resolution ( <3ns rms)

High efficiency ( >99% in 20ns window)High efficiency ( >99% in 20ns window)

High rates ( 10 ^ 5 /channel*sec)High rates ( 10 ^ 5 /channel*sec)

Slow aging (up to 1 C/cm wire) Slow aging (up to 1 C/cm wire)

Our proposal:Our proposal: 3. Wire / cathode pad chambers3. Wire / cathode pad chambers LHCb Note 2000-003LHCb Note 2000-003

Side bar

M 2:1

Frame

Gas Outlet

Gas Inlet

Wire chamber for LHCb Muon System

Development of LHCb Muon Development of LHCb Muon ChambersChambers

B.Bochin, S.Guets, A.Kashshuk, V.Lazarev, N.Sagidova, E.Spiridenkov,

A.Tsaregorodtsev , G.Velichko, An.Vorobiev, A.Vorobyov

3. Wire Pad Chamber for LHCb Muon System, LHCb 2000-0034. Beam tests of WPC-7 prototype of the wire pad chambers of the wire pad chambers for the LHCb Muon System, for the LHCb Muon System, LHCb 2000-102LHCb 2000-102 5. Beam tests of WPC-8 and WPC-9 prototypes of the wire 5. Beam tests of WPC-8 and WPC-9 prototypes of the wire

padpad chambers for the LHCb Muon System,chambers for the LHCb Muon System, LHCb 2001-025LHCb 2001-025 6.Test results of a full size prototype of the muon chambers 6.Test results of a full size prototype of the muon chambers

forfor region M2/R4 of the LHCb Muon Systemregion M2/R4 of the LHCb Muon System LHCb 2002-025LHCb 2002-025

Side bar

M 2:1

Frame

Gas Outlet

Gas Inlet

Wire chamber for LHCb Muon System

wpc parametrswpc parametrs

ANODE -CATHODE DISTANCE ANODE -CATHODE DISTANCE 2.5 MM2.5 MM WIRE SPACING WIRE SPACING 2.0 MM2.0 MM

WIRE DIAM WIRE DIAM 30 MKM30 MKM

GAS MIXTURE GAS MIXTURE Ar /CO2 /CF4 Ar /CO2 /CF4

HV HV 2.9 KV 2.9 KV

GAS GAIN GAS GAIN 10^5 10^5

1

2

3

4

Plane A

Plane B

Plane C

Plane D

A1;B1

A2;B2

C2;D2

C1;D1

SON

Y c

hip

HV A

HV B

HV C

HV D

+

+

+

+ HV & Readout scheme.

Shape of the signal from a wire pad

An example of ADC and TDC distributions.

Plane AB. Thresh = 30 mV.

Beam on pad 11. HV=3.1 kV.

Time resolution = 3.13 ns (rms)

Efficiency in 20ns window= 99.2%

94

95

96

97

98

99

100

2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5

HV [kV]

TD

C e

ff (

20 n

s)

PAD11_AB

PAD11_CDPAD11_OR

Gate 20 ns

Efficiency for double-gap and four-gap modes

Beam intensity 50 kHz20ns time window

0 10 20 30 40 50 60 70 80 90

100 110 120 130 140 150

2,90 2,95 3,00 3,05 3,10 3,15 3,20 3,25 3,30 3,35 3,40 HV [kV]

No

ise r

ate

, H

z

Pad1 Pad2 Pad3 Pad4 Pad5 Pad6 Pad7 Pad8 Pad9 Pad10 Pad11 Pad12 Pad13 Pad14 Pad15 Pad16 Pad17 Pad18 Pad19 Pad20 Pad21 Pad22 Pad23 Pad24

Thresh = 30 mV

0 10 20 30 40 50 60 70 80 90

100

2,9 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4

No

ise

rate

, Hz

Thresh = 40 mV

Noise rates between beam spills for various thresholds.

Ar(40%)+CO2(50%)+CF4(10%).Plane AB. Beam on pad 11.

Arrows indicate positions of HVmin.

Mean ADC for various pads and beam positions. Plane AB.

0

500

1000

1500

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24N Pad

bottomcentertop

AD

C-m

ea

n [

ch

]

Mean ADC for various pads and beam positions. Plane CD.

0

500

1000

1500

2000

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24N Pad

bottomcentertop

AD

C-m

ea

n

Gas gain variation over the surface of M2R4-01

0

5

10

15

20

2,9 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4 3,45

Cro

ss-t

alks

[%

]

Pad9Pad10Pad12Pad13

Plane ABThresh = 30 mV

Ar(40%) +CO2(40%)+CF4(20%)

Cross talk probabilities vs HV.Beam on pad 11. Presented are the cross-talks to

neighbour pads (10 & 12) and to next-to-neighbour pads (9 & 13).

TDC window = 300 ns.

Mass production of Muon Mass production of Muon chamberschambers

Total number of chambers in Muon SystemTotal number of chambers in Muon System

1300 chambers1300 chambers

To be produced in PNPI-1 factoryTo be produced in PNPI-1 factory

200 chambers M2R4200 chambers M2R4

200 chambers M3R4200 chambers M3R4

To be produced in PNPI-2 factoryTo be produced in PNPI-2 factory

200 chambers M4R4200 chambers M4R4

PNPI-1 Muon Chamber PNPI-1 Muon Chamber FactoryFactory

PNPI-1 Muon Chamber PNPI-1 Muon Chamber FactoryFactory

WC

ENTRY

5,81 m 6,62 m

5,8

5 m

4,1

7 m

3,55 m7,52 m

1,5

3 m

4,15 m5,73 m

2,45 m 5,50 m

22.82 m

45

GROUND FLOOR

58

58

5,4

5 m

4,4

0 m

15 m

10 m

302522

435

535 350

300

480

515

Pumping & Compressor

E

lect

ric

pow

er

dis

trib

uti

onV

enti

lati

on

sys

tem

Ventilation system

Wiring

N2

bottles

Clo

ak -

roo

m

Wire soldering pitch & tension conrtole

( S = 340 m² )

Clean room

HV component soldering & final chamber glueing

Installation of boards, frames and etc.

Chamber tests

Cloak - room

Storage of assembled chambers

Carentrance

Assemblingwith O-rings

Crane

TOOLINGTOOLING

*Bar glueing machines

*Wiring machine

*Soldering machine

*Wire pitch&tension measuring machine

Bar glueing machineBar glueing machine

J ul Aug Sep Oct Nov Dec J ul SepAug Oct Nov DecJ an MarFeb Apr May J un2003

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

2004J an Feb Mar Apr May J un J ul Aug Sep Oct Nov Dec

2005

19 x 9 = 171 chambers

12 x 2 = 24 ch.

8 ch.

5 ch.

3 ch.

2 ch.

1 ch.

171+24+8+5+3+2+1 = 214 chambers

M3R4

Inst

allati

on o

f Too

lin

g

M2R

4

19 x 9 = 190 chambers

16 ch.

5 ch.

M2R45+16+190 = 211 chambers

2005J an Feb

Muon Chamber Production PlanMuon Chamber Production Planin PNPI-1in PNPI-1

Production rate up to one chamber per Production rate up to one chamber per dayday

400 chambers by the end of 2005400 chambers by the end of 2005

PNPI-2 factoryPNPI-2 factory

By August 2004 By August 2004 CMS Muon ChamberFactoryCMS Muon ChamberFactory should be transferred should be transferred into PNPI-2 LHCb muon Chamber Factoryinto PNPI-2 LHCb muon Chamber Factory

All chambers should be constructed All chambers should be constructed by the end of 2005by the end of 2005