PNPI in LHCb PNPI in LHCb
A.Vorobyov
HEPD Scientific Board meeting, December 26,2003
Status report for 2003
LHCb MUON SYSTEMLHCb MUON SYSTEM Goals:Goals: 1. Muon identification1. Muon identification 2.Trigger with Pt cut at >1.2 Gev/c2.Trigger with Pt cut at >1.2 Gev/c
Strategy:Strategy: 1. Stand-alone mode 1. Stand-alone mode ( using information only from Muon ( using information only from Muon
Stations)Stations) 2. Pad structure 2. Pad structure ( 24x4 cm2, 12x2cm2, 6x1cm2, 3x0.5cm2 )( 24x4 cm2, 12x2cm2, 6x1cm2, 3x0.5cm2 ) 1.1. M.Borkovsky,A.Tsaregorodtsev,A.VorobyovM.Borkovsky,A.Tsaregorodtsev,A.Vorobyov The LHCb Level-0 Muon Trigger, LHCb 98-02The LHCb Level-0 Muon Trigger, LHCb 98-02
Background:Background: 10*3- 10*5 charged particles/cm2xsec10*3- 10*5 charged particles/cm2xsec 2.2. N,Sagidova, A.Tsaregorodtsev, A.VorobyovN,Sagidova, A.Tsaregorodtsev, A.Vorobyov GCALOR Studies of Background in LHCb Muon ChambersGCALOR Studies of Background in LHCb Muon Chambers LHCb 98-059LHCb 98-059
LHCb MUON SYSTEMLHCb MUON SYSTEM
Detector technology:Detector technology: Modest space resolution (pad size)Modest space resolution (pad size)
High time resolution ( <3ns rms)High time resolution ( <3ns rms)
High efficiency ( >99% in 20ns window)High efficiency ( >99% in 20ns window)
High rates ( 10 ^ 5 /channel*sec)High rates ( 10 ^ 5 /channel*sec)
Slow aging (up to 1 C/cm wire) Slow aging (up to 1 C/cm wire)
Our proposal:Our proposal: 3. Wire / cathode pad chambers3. Wire / cathode pad chambers LHCb Note 2000-003LHCb Note 2000-003
Side bar
M 2:1
Frame
Gas Outlet
Gas Inlet
Wire chamber for LHCb Muon System
Development of LHCb Muon Development of LHCb Muon ChambersChambers
B.Bochin, S.Guets, A.Kashshuk, V.Lazarev, N.Sagidova, E.Spiridenkov,
A.Tsaregorodtsev , G.Velichko, An.Vorobiev, A.Vorobyov
3. Wire Pad Chamber for LHCb Muon System, LHCb 2000-0034. Beam tests of WPC-7 prototype of the wire pad chambers of the wire pad chambers for the LHCb Muon System, for the LHCb Muon System, LHCb 2000-102LHCb 2000-102 5. Beam tests of WPC-8 and WPC-9 prototypes of the wire 5. Beam tests of WPC-8 and WPC-9 prototypes of the wire
padpad chambers for the LHCb Muon System,chambers for the LHCb Muon System, LHCb 2001-025LHCb 2001-025 6.Test results of a full size prototype of the muon chambers 6.Test results of a full size prototype of the muon chambers
forfor region M2/R4 of the LHCb Muon Systemregion M2/R4 of the LHCb Muon System LHCb 2002-025LHCb 2002-025
Side bar
M 2:1
Frame
Gas Outlet
Gas Inlet
Wire chamber for LHCb Muon System
wpc parametrswpc parametrs
ANODE -CATHODE DISTANCE ANODE -CATHODE DISTANCE 2.5 MM2.5 MM WIRE SPACING WIRE SPACING 2.0 MM2.0 MM
WIRE DIAM WIRE DIAM 30 MKM30 MKM
GAS MIXTURE GAS MIXTURE Ar /CO2 /CF4 Ar /CO2 /CF4
HV HV 2.9 KV 2.9 KV
GAS GAIN GAS GAIN 10^5 10^5
1
2
3
4
Plane A
Plane B
Plane C
Plane D
A1;B1
A2;B2
C2;D2
C1;D1
SON
Y c
hip
HV A
HV B
HV C
HV D
+
+
+
+ HV & Readout scheme.
Shape of the signal from a wire pad
An example of ADC and TDC distributions.
Plane AB. Thresh = 30 mV.
Beam on pad 11. HV=3.1 kV.
Time resolution = 3.13 ns (rms)
Efficiency in 20ns window= 99.2%
94
95
96
97
98
99
100
2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5
HV [kV]
TD
C e
ff (
20 n
s)
PAD11_AB
PAD11_CDPAD11_OR
Gate 20 ns
Efficiency for double-gap and four-gap modes
Beam intensity 50 kHz20ns time window
0 10 20 30 40 50 60 70 80 90
100 110 120 130 140 150
2,90 2,95 3,00 3,05 3,10 3,15 3,20 3,25 3,30 3,35 3,40 HV [kV]
No
ise r
ate
, H
z
Pad1 Pad2 Pad3 Pad4 Pad5 Pad6 Pad7 Pad8 Pad9 Pad10 Pad11 Pad12 Pad13 Pad14 Pad15 Pad16 Pad17 Pad18 Pad19 Pad20 Pad21 Pad22 Pad23 Pad24
Thresh = 30 mV
0 10 20 30 40 50 60 70 80 90
100
2,9 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4
No
ise
rate
, Hz
Thresh = 40 mV
Noise rates between beam spills for various thresholds.
Ar(40%)+CO2(50%)+CF4(10%).Plane AB. Beam on pad 11.
Arrows indicate positions of HVmin.
Mean ADC for various pads and beam positions. Plane AB.
0
500
1000
1500
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24N Pad
bottomcentertop
AD
C-m
ea
n [
ch
]
Mean ADC for various pads and beam positions. Plane CD.
0
500
1000
1500
2000
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24N Pad
bottomcentertop
AD
C-m
ea
n
Gas gain variation over the surface of M2R4-01
0
5
10
15
20
2,9 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4 3,45
Cro
ss-t
alks
[%
]
Pad9Pad10Pad12Pad13
Plane ABThresh = 30 mV
Ar(40%) +CO2(40%)+CF4(20%)
Cross talk probabilities vs HV.Beam on pad 11. Presented are the cross-talks to
neighbour pads (10 & 12) and to next-to-neighbour pads (9 & 13).
TDC window = 300 ns.
Mass production of Muon Mass production of Muon chamberschambers
Total number of chambers in Muon SystemTotal number of chambers in Muon System
1300 chambers1300 chambers
To be produced in PNPI-1 factoryTo be produced in PNPI-1 factory
200 chambers M2R4200 chambers M2R4
200 chambers M3R4200 chambers M3R4
To be produced in PNPI-2 factoryTo be produced in PNPI-2 factory
200 chambers M4R4200 chambers M4R4
PNPI-1 Muon Chamber PNPI-1 Muon Chamber FactoryFactory
PNPI-1 Muon Chamber PNPI-1 Muon Chamber FactoryFactory
WC
ENTRY
5,81 m 6,62 m
5,8
5 m
4,1
7 m
3,55 m7,52 m
1,5
3 m
4,15 m5,73 m
2,45 m 5,50 m
22.82 m
45
GROUND FLOOR
58
58
5,4
5 m
4,4
0 m
15 m
10 m
302522
435
535 350
300
480
515
Pumping & Compressor
E
lect
ric
pow
er
dis
trib
uti
onV
enti
lati
on
sys
tem
Ventilation system
Wiring
N2
bottles
Clo
ak -
roo
m
Wire soldering pitch & tension conrtole
( S = 340 m² )
Clean room
HV component soldering & final chamber glueing
Installation of boards, frames and etc.
Chamber tests
Cloak - room
Storage of assembled chambers
Carentrance
Assemblingwith O-rings
Crane
TOOLINGTOOLING
*Bar glueing machines
*Wiring machine
*Soldering machine
*Wire pitch&tension measuring machine
Bar glueing machineBar glueing machine
J ul Aug Sep Oct Nov Dec J ul SepAug Oct Nov DecJ an MarFeb Apr May J un2003
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
2004J an Feb Mar Apr May J un J ul Aug Sep Oct Nov Dec
2005
19 x 9 = 171 chambers
12 x 2 = 24 ch.
8 ch.
5 ch.
3 ch.
2 ch.
1 ch.
171+24+8+5+3+2+1 = 214 chambers
M3R4
Inst
allati
on o
f Too
lin
g
M2R
4
19 x 9 = 190 chambers
16 ch.
5 ch.
M2R45+16+190 = 211 chambers
2005J an Feb
Muon Chamber Production PlanMuon Chamber Production Planin PNPI-1in PNPI-1
Production rate up to one chamber per Production rate up to one chamber per dayday
400 chambers by the end of 2005400 chambers by the end of 2005
PNPI-2 factoryPNPI-2 factory
By August 2004 By August 2004 CMS Muon ChamberFactoryCMS Muon ChamberFactory should be transferred should be transferred into PNPI-2 LHCb muon Chamber Factoryinto PNPI-2 LHCb muon Chamber Factory
All chambers should be constructed All chambers should be constructed by the end of 2005by the end of 2005