Power GaN FETs

Building on proven processes

Whether that is internationally recognized standards for quality (ISO 9000), the environment (ISO 14001), health

From product concept and design to manufacturing and sales, getting the smallest details right helps the world’s most demanding industries make quality and efficiency gains. Key to Nexperia’s success has been a strong commitment to meet and even go beyond the stringent quality standards our customers demand, and this standard level also applies to our development of power GaN FETs.

Nexperia Power GaN FETs2

Building on proven processes

Whether that is internationally recognized standards for quality (ISO 9000), the environment (ISO 14001), health

From product concept and design to manufacturing and sales, getting the smallest details right helps the world’s most demanding industries make quality and efficiency gains. Key to Nexperia’s success has been a strong commitment to meet and even go beyond the stringent quality standards our customers demand, and this standard level also applies to our development of power GaN FETs.

Nexperia Power GaN FETs2

Power conversion efficiency is a key growth driver in electronics but there is often a trade-off between density and efficiency.

rr

› ›

›

›

›

›

› ›

3

150 nC

GaN Si

2790nC

60060 60

20020 20

-200-20 -20

40040 40

00 0

-400-40 -40

50050 50

10010 10

-300-30 -30

30030 30

-100-10 -10

-500-50 -500 7.4200 7.6100 7.5300 7.750 7.45250 7.65150

Time (ns) Time (nS)

Vo

ltag

e (V

)

Cur

rent

(A)

Cur

rent

(A)

7.55

ID (A) VD (V) ID (A)

600

179nC

GaN Si

2790 nC

60 60

200 20 20

-200 -20 -20

400 40 40

0 0 0

-400 -40 -40

500 50 50

100 10 10

-300 -30 -30

300 30 30

-100 -10 -10

-500 -50 -507.4 07.6 2007.5 1007.7 3007.45 507.65 2507.55

Time (nS) Time (ns)

Vo

ltag

e (V

)

Cur

rent

(A)

Cur

rent

(A)

150

VD (V) ID (A) ID (A)

GAN041-650WSB

400 V, 40 A, 800 A/μs, Qrr= 150 nC

Si MOSFET

400 V, 40 A, 800 A/μs, Q rr= 2790 nC

Where performance counts

4

and

Efficient power use is a key industrial challenge and a driver for innovation. Societal

and control. For some applications power conversion efficiency and power density are critical for market adoption. Prime examples include the trend towards automotive electrification and the high-voltage communications and industrial infrastructure sectors. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost.

Where performance counts

4

and

Efficient power use is a key industrial challenge and a driver for innovation. Societal

and control. For some applications power conversion efficiency and power density are critical for market adoption. Prime examples include the trend towards automotive electrification and the high-voltage communications and industrial infrastructure sectors. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost.

5

Loss

(W)

Po

wer

Lo

ss (W

)

97 9770 70

93 9330 30

99 9990 90

95 9550 50

91 9110 10

100 100100 100

96 9660 60

92 9220 20

98 9880 80

94 944040

90 900 0

0 02000 30001000 10003000 25003500 3500 4000500 500

GaN

2500 15001500 2000

Output power (W) Output Power (W)

Loss

(W)

Po

wer

loss

(W)

9770 70

9330 30

9990 90

9550 50

9110 10

100100 100

9660 60

9220 20

9880 80

944040

900 0

02000 30001000 10003000 25003500 3500 4000500 500

GaN

2500 15001500 2000

Output Power (W) Output power (W)

rr

››››

VIN

C1

C2

V0

GND

Q 1

Q 2

VS

L1

GaN

GaN

Vac

High speed

Low speed

Time

IL

GaN FET totem pole PFC

Totem pole PFC

115 Vac, 60 hz eff115 Vac, 60 hz loss

230 Vac, 50 hz eff230 Vac, 50 hz loss

R

R typ

OSS

rr

R

R typ

OSS

rr

›› rr

› High ruggedness

›››

We remain focused on the development of veryhigh-reliability high-quality power GaN FETs, withcontinued development in:

• Clip-bond packaging (CCPAK)• Bare die

GAN041-650WSB – Power GaN FET 650 V

Both products are available nowVisit www.nexperia.com/gan-fets for datasheets, samples, and design support tools

R

R typ

OSS

rr

R

R typ

OSS

rr

›› rr

› High ruggedness

›››

We remain focused on the development of veryhigh-reliability high-quality power GaN FETs, withcontinued development in:

• Clip-bond packaging (CCPAK)• Bare die

GAN041-650WSB – Power GaN FET 650 V

Both products are available nowVisit www.nexperia.com/gan-fets for datasheets, samples, and design support tools

CCPAK

As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality high-robustness SMD packaging to its GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simplified design of cascode configuration to eliminate the need for complicated drivers and controls.

› Compact footprint of12 x 12 mm and low packageheight of 2.5 mm

› Wire-bond free forlow inductances

› Flexible leads forimproved reliability

› <0.5 K/W thermalresistance

› Ultra-low packageresistance

› Exposed leads allow foreasy optical inspection

Features and benefitsInnovative copper-clip technology

3x lower inductances than industry-standard

packages for lower switching losses and EMI

Higher reliability vs wire-bond solution

Manufacturability & robustnessFlexible leads for temp cycling reliability

Flexible gull winged leads for robust

board level reliability

Compatible with SMD soldering and AOI

Target applicationsIndustrial

Power supplies for Titanium grade rack

mounted telecoms

Power supplies for 5G and data centres

Industrial vehicle charging

Solar (PV) inverter

AC servo drive/Frequency inverters

Thermal performanceLow Rth(j-mb) typ (<0.5 K/W) for optimal cooling

175 ºC Tj max

Two cooling optionsBottom-side cooling (CCPAK1212)

Top-side cooling (CCPAK1212i)

Plan for qualificationsAEC-Q101

MSL1

Halogen free

Automotive EVOn board charging

DC/DC converters

Traction inverters

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›

›

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For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling, andtraditional bottom-side cooling design. The first in the portfolio of GaN SMD packages, the CCPAK1212 and CCPAK1212i hasa compact footprint of 12 x 12 mm and low package height of 2.5 mm.

7

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Date of release: March 2021

Printed: In the Netherlands

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