™
Power Module for 0.5 hp Motor Drives
PROVISIONAL
· 0.5 hp (0.37 kW) power outputIndustrial rating at 150% overload for 1 minute
· 180-240V AC single-phase input, 50/60 Hz· Single-phase rectifier bridge· 3-phase, short circuit rated, ultrafast IGBT inverter· HEXFRED ultrafast soft recovery freewheeling diodes· Low inductance (current sense) shunts in positive
and negative DC rail· NTC temperature sensor· Pin-to-baseplate isolation 2500V rms· Easy-to-mount two-screw package· Case temperature range -25oC to 125oC operational
Figure 2. The IRPT1066A Power Module within a motorcontrol system
Figure 1. IRPT1066A Power Module
PD 60142
IRPT1066APowerModule
GateDriverBoard
PWMgenerator
180-240Vsingle-phase input
PWMvariable
frequencyoutput
feedback(non-isolated)
keyboard
feedbackprocessing
ACmotor
IRPT1066A
page 2
IRPT1066A
The IRPT1066A Power ModuleThe IRPT1066A Power Module, shown in figure 1, is a
chip and wire epoxy encapsulated module. It houses inputrectifiers, output inverter, current sense shunts and NTCthermistor. The single-phase input bridge rectifiers arerated at 800V. The inverter section employs 600V, shortcircuit rated, ultrafast IGBTs and ultrafast freewheelingdiodes. Current sensing is achieved through 150 mΩ lowinductance shunts provided in the positive and negative DCbus rail. The NTC thermistor provides temperature sensingcapability. The lead spacing on the power module meetsUL840 pollution level 3 requirements.
The power circuit and layout within the module arecarefully designed to minimize inductance in the powerpath, to reduce noise during inverter operation and toimprove the inverter efficiency. The driver board requiredto run the inverter can be soldered to the power modulepins, thus minimizing assembly and alignment. The powermodule is designed to be mounted to a heat sink with twoscrew mount positions, in order to insure good thermalcontact between the module substrate and the heat sink.
page 3
IRPT1066A
Specifications
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page 4
IRPT1066A
0
0 .5
1
1 .5
2
2 .5
1 4 8 1 2 1 6 2 0 2 4
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
0
0.5
1
1.5
2
2.5
3
1 4 8 12 16 20 24
0
5
10
15
20
25
30
35
40
PWM Frequency (kHz) – (induction Motor Load)Figure 3a. 0.5 hp/2.9A Output Heat Sink Thermal Resistance and Power Dissipation vs. PWM Frequency
PWM Frequency (kHz) – (induction Motor Load)Figure 3b. 0.25 hp/1.9A Output Heat Sink Thermal Resistance and Power Dissipation vs. PWM Frequency
NOTE: For Figures 3a and 3b: Operating Conditions: Vin = 230Vrms, MI = 1.15, PF = 0.8, TA = 40oC, ZthSA limits∆Tc rise during 1 minute overload to 10oC
Tota
l Pow
er D
issi
patio
n (W
atts)
Ther
mal
Res
ista
nce
(Rth
SAo C
/W)
0.5 hp(0.37 kW)
Tota
l Pow
er D
issi
patio
n (W
atts)
Ther
mal
Res
ista
nce
(Rth
SAo C
/W)
RthSA 100% load(continuous) 10-60 Hz
RthSA 150% load(1 min.) 10-60 Hz
Power150%
Power100%
RthSA 150% load(1 min.) down to 3 Hz
RthSA 100% load(continuous) 10-60 Hz
0.25 hp(0.185 kW)Power
150%
Power100%
RthSA 150% load(1 min.) down to 3 Hz
RthSA 150% load(1 min.) 10-60 Hz
page 5
IRPT1066A
1
10
100
5 10 15 20
V , Gate-to-Emitter Voltage (V)
I ,
Col
lect
or-t
o-E
mitt
er C
urre
nt (
A)
GE
C
V = 50V5µs PULSE WIDTH
CCT = 25 CJ °
T = 150 CJ °
0 4 8 12 16 200
4
8
12
16
20
Q , Total Gate Charge (nC)V
,
Gat
e-to
-Em
itter
Vol
tage
(V
)G
GE
V = 400VI = 5.0A
CC
C
Figure 4b. Typical Gate Charge vsGate-to-Emitter Voltage
Figure 4c. Typical Transfer Characteristics Figure 5. Nominal R-T Characteristics of theNTC Thermistor
Figure 4a. Typical Capacitance vsCollector-to-Emitter Voltage
1 10 1000
100
200
300
400
V , Collector-to-Emitter Voltage (V)
C, C
apac
itanc
e (p
F)
CE
VCCC
====
0V,CCC
f = 1MHz+ C
+ C
C SHORTEDGEies ge gc , ceres gcoes ce gc
C ies
Coes
Cres
VGE = 0V, f = 1MHzCies = Cge + Cgc , Cce SHORTEDCres = CgcCoes= Cce + Cgc
VCC = 400VIC = 5.0A
TJ =150oC
TJ =25oC
page 6
IRPT1066A
Mounting ProcedureMounting
1. Connect the driver board and the IRPT1066Apower module.
2. Remove all particles and grit from the heat sinkand power substrate.
3. Spread a .004" to .005" layer of silicone grease onthe heat sink, covering the entire area that the powersubstrate will occupy. Recommended heat sink flatners is.001 inch/inch and Total Indicator Readout (TIR) of .003inch below substrate.
4. Place the power substrate onto the heat sink withthe mounting holes aligned and press it firmly into thesilicone grease.
5. Place the 2 M4 mounting screws through the PCBand power module and into the heat sink and tighten thescrews to 1 Nm torque.
Power ConnectionsThe power module pin designation, function and other
details can be obtained from the package outline Figure 7and circuit diagram Figure 8. Single-phase input connectionsare made to pins R and S and inverter output connectionsmade to pins U, V and W. Positive rectifier output andpositive inverter bus are brought out to pins RP and Prespectively in order to provide DC bus capacitor softcharging implementation option. The current shuntterminals are connected to pins IS1, IS2 and IS3, IS4 on thepositive and negative DC rails respectively.
Figure 6. Power Module Mounting Screw Sequence
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1 2
Heat Sink RequirementsFigures 3a-3b show the thermal resistance of the heat sink
required for various output power levels and Pulse-Width-Modulated (PWM) switching frequencies. Maximum totallosses of the unit are also shown. This data is based on thefollowing key operating conditions:
• The maximum continuous combined losses of therectifier and inverter occur at full pulse-width-modulation. These maximum losses set the maximumcontinuous operating temperature of the heat sink.
• The maximum combined losses of the rectifier andinverter at full pulse-width-modulation under overloadset the incremental temperature rise of the heat sinkduring overload.
• The minimum output frequency at which full loadcurrent is to be delivered sets the peak IGBT junctiontemperature.
• At low output frequency, IGBT junction temperaturetends to follow the instantaneous fluctuations of theoutput current. Thus, peak junction temperature riseincreases as output frequency decreases.
Over-Temperature ProtectionOver-temperature can be detected using the NTC
thermistor included in the power module for thermalsensing. Protection circuit that initiates a shutdown if thetemperature of the IMS substrate exceeds a set level can beimplemented. The nominal resistance vs. temperaturecharacteristic of the thermistor is given in Figure 5.
Voltage Rise During BrakingThe motor will feed energy back to the DC link during
regenerative braking, forcing the bus voltage to rise abovethe level defined by the input line voltage. Deceleration ofthe motor must be controlled by appropriate PWM controlto keep the DC bus voltage within the rated maximumvalue.
Functional Information
page 7
IRPT1066A
NOTE: Dimensions are in inches (millimeters)
Figure 7a. Power Module Package Outline
page 8
IRPT1066A
NOTE: Dimensions are in inches (millimeters)
Figure 7b. Power Module Package Outline
page 9
IRPT1066A
Figure 8. Power Module Circuit Diagram
page 10
IRPT1066A
Figure 9. Recommended Gate Drive Circuit
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IRPT1066A
IRPT1066A Power ModuleChip and wire epoxy encapsulated module with 800V
rectifiers, 600V short-circuit rated, ultra-fast IGBT inverter
Part Number Identification and Ordering Instructions
with ultra-fast freewheeling diodes, temperature sensingNTC thermistor and current-sensing low-inductance shunts.
page 12
IRPT1066A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111IR FAR EAST: 171 (K&H Bldg.), 3-30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371http://www.irf.com/ Data and specifications subject to change without notice. 5/98