Raider® GT Copper Interconnect El t h i l D iti S tElectrochemical Deposition SystemUniform, Small Feature Fill
March 16, 2011
External UseSILICON SYSTEMS GROUP External UseSILICON SYSTEMS GROUP
Silicon Systems Group Overview
#1 in the Wafer Fab Equipment (WFE) and advanced(WFE) and advanced packaging markets
I 2011 t t WFE In 2011, expect to grow WFE market share for the 3rd consecutive year y
Growth fueled by new product innovations alignedinnovations aligned to technology inflections
External UseSILICON SYSTEMS GROUP2
Source: Gartner, April 2010
Innovations Enable Inflections
Conforma™ Doping
Centris™ Etch Avenir™ RF PVD Ni
Avila™ CVD
Tetra X™
Aera3™
Silvia™ EtchDFinder™ Inspection
Avenir™ RF PVD Gate
Eterna™ FCVD
Raider™ GT
Mesa™ Etch InVia™ CVDCentinel™ PVD / ALDSiconi™ for Epi
Raider GT Electrochemical Deposition System
UVision® 4 Brightfield Raider-S™ ECDReflexion® GT™CMPAstra™ DSA Anneal
External UseSILICON SYSTEMS GROUP
p yHigh Productivity Cu ECD
3
Smaller Features Increase Difficulty in Uniform Cu DepositionUniform Cu Deposition
The size of features decreases with each technology node reducing the space for the barrier Cu seed and ECD Cu metalbarrier, Cu seed and ECD Cu metal
Feature density increases on the wafer with each new technology node
Reduced Cu seed layer thickness and increased feature density on the wafer lead to
External UseSILICON SYSTEMS GROUP4
Reduced Cu seed layer thickness and increased feature density on the wafer lead to increased resistance and make uniform deposition difficult
Thinner Barrier/Seed Plating Challenge: Center-to-Edge Uniformity ControlCenter-to-Edge Uniformity Control
Terminal effect increases with thinner seed layers
Mulit-anode zonal deposition control provides uniform deposition and feature fill across the wafer
External UseSILICON SYSTEMS GROUP5
ac oss t e a e
Center-to-Edge Control Makes for Successful Bottom-Up Gapfill
The terminal effect is greatest at the onset of deposition
Successful Bottom-Up Gapfill
onset of deposition
Uniform deposition requires more current at the center vs. the edge of gthe wafer
The terminal effect is reduced throughout depositionthroughout deposition
Dynamic current adjustment is needed to maintain uniform deposition
External UseSILICON SYSTEMS GROUP6
Raider GT New Optimized Hardware & Processes for Highest Productivity
Raider GT 6-4
Processes for Highest Productivity
Plating Cells (twice any other offering) Increased deposition speed External high rate de-plate
Velocity™ Back Side and Bevel Etch and Clean Stations High speed processing Programmable edge exclusion
External UseSILICON SYSTEMS GROUP
g g 66% Reduction in CoC
7
Raider GT – Best in Class Productivity and Lowest CoOProductivity and Lowest CoO
Normalized Comparison of CoOThroughput Comparison
Competition Applied Raider GTCompetition Applied Raider GT
External UseSILICON SYSTEMS GROUP8
Success of Business Combination with Applied Materialswith Applied Materials
Semitool Rapid Innovation of New Technology Rapid Innovation of New Technology Leadership in Electrochemical Deposition Raider Platform Flexibility and Productivity
Semitool Combined with Applied Materials World Class Manufacturing and Logistics World Class Manufacturing and Logistics Dynamic Integration Development and Demonstration with Maydan
Technology Center Market Leadership and Mutual Customer Trust and Respect Leverage of Applied Global Support Infrastructure and Expertise Fueled for Growth
External UseSILICON SYSTEMS GROUP External UseSILICON SYSTEMS GROUPSILICON SYSTEMS GROUP
Fueled for Growth
9
Raider Customer Traction in Copper Interconnect PlatingInterconnect Plating
2006 2010Acquisition
Customer Tool-of-Record Tool-of-Record
A
B c/ dry 3 new customer
penetrations andC
D
Logi
Foun
d
penetrations and tool-of-record wins all driven through better small feature fill
A
B
C
mor
y
21% estimated market share in 2010(source: Gartner Mar ‘11)
D
E
Mem
( )
External UseSILICON SYSTEMS GROUP10
F
Applied Raider GT for Cu Electrochemical DepositionElectrochemical Deposition
Powerful Technology Superior Small Feature Fill Lowest Cost of Ownership
Innovation and Leadership Time to Market Technology Leading Integration Capability
External UseSILICON SYSTEMS GROUP11
External UseSILICON SYSTEMS GROUP
