www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF N-channel SiC power MOSFET

650V

120m29A

6) Pb-free lead plating ; RoHS compliant

VDSS

RDS(on) (Typ.)

IDPD

4) Easy to parallel

Features

165W

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

Outline

Inner circuit

Packaging specifications

TO220AB

Parameter

Tc = 25C

Drain - Source voltage

Continuous drain current

Absolute maximum ratings (Ta = 25C)

・Induction heating

Application

・Switch mode power supplies

・Solar inverters

・Motor drives

・DC/DC converters

Gate - Source voltage (DC)

Gate - Source surge voltage (Tsurge ˂ 300nsec) VGSS-surge*3

5) Simple to drive

Marking

Pulsed drain current

Basic ordering unit (pcs)

Tc = 100C

V6 to 22

Unit

ID,pulse *2

V

20ID *1

Range of storage temperature Tstg

Power dissipation (Tc = 25C)

Junction temperature

PD

Tj 175

C

W

C

55 to 175

165

Tube

-

Type

Packing

Reel size (mm)

C

SCT2120AF

Tape width (mm) -

50

Packing code

10 to 26 V

Symbol Value

29

72

VGSS

A

VDSS 650

A

A

ID *1

(1) Gate(2) Drain(3) Source

*1 Body Diode

(1)

(3)

(2)

*1

(1) (2) (3)

1/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

*1 Limited only by maximum temperature allowed.

*2 PW 10s, Duty cycle 1%

*3 Example of acceptable Vgs waveform

*4 Pulsed

Values

-

Typ.

Gate - Source leakage current IGSS- VGS = 6V, VDS = 0V - -100

Parameter

TsoldSoldering temperature, wavesoldering for 10s

ConditionsSymbol

Electrical characteristics (Ta = 25C)

265-

Max.Parameter

0.91

Values

Thermal resistance

Thermal resistance, junction - case

Symbol

0.70-

Typ.Min.

RthJC

V

-

-

-

2.8

100-

4.0

2

nA

nA

V

A

Unit

C/W

C

UnitMax.Min.

-

650

10

-

1-

Gate threshold voltage VGS (th) VDS = VGS, ID = 3.3mA 1.6

-Gate - Source leakage current VGS = 22V, VDS = 0VIGSS+

Tj = 25CZero gate voltagedrain current

VDS = 650V, VGS = 0V

V(BR)DSS VGS = 0V, ID = 1mA

Tj = 150°C

IDSS

Drain - Source breakdownvoltage

2/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Parameter

10.4

-Gate - Drain charge 21

Total gate charge

Gate - Source charge Qgs *4

Qg *4

Qgd *4

VGate plateau voltage V(plateau) VDD = 300V, ID = 10A - -

Unit

- 14 -

Min.

nC

61 -

-

-

SymbolValues

Max.

VGS = 18V

ConditionsTyp.

ID = 10A

VDD = 300V

Gate Charge characteristics (Ta = 25C)

Rise time tr *4 VGS = 18V/0V

Turn - off delay time

Fall time

RL = 30

VDD = 300V, ID=10AVGS = 18V/0VRG = 0Ω, L=500µH*Eon includes diode reverse recovery

Turn - on switching loss Eon *4

Turn - off switching loss Eoff *4

Crss

pF- 115 -

ns60 -

19 -

-22

-

-

-

RG = 0

-

VGS = 0VVDS = 0V to 300V

31

f = 1MHz

td(off) *4

tf *4

- 61 -

Effective output capacitance,energy related

Co(er)

Turn - on delay time td(on) *4

µJ

- S

pF

- 13

-

VGS = 0V - 1200 -

-90

-

VDD = 300V, ID = 10A -

-

gfs *4 VDS = 10V, ID = 10A

41

Electrical characteristics (Ta = 25C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Reverse transfer capacitance

Transconductance

Input capacitance

-

Output capacitance Coss VDS = 500V

2.7

Ciss

-

Static drain - sourceon - state resistance

Gate input resistance RG f = 1MHz, open drain - 13.8 -

RDS(on) *4

Tj = 125°C - 149

mTj = 25C - 120 156

-

VGS = 18V, ID = 10A

3/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

- V

ns-

- A

Forward voltage

Reverse recovery time

Reverse recovery charge

trr *4

3.0

-VGS = 0V, IS = 10A

Peak reverse recovery current

4.3

Irrm *4

-

Qrr *4

A

A

29

Inverse diode direct current,pulsed

Unit

72-

Parameter

-

Symbol Conditions

Inverse diode continuous,forward current

IS *1

ISM *2

Body diode electrical characteristics (Source-Drain) (Ta = 25C)

- 53 - nC

VSD *4

Typ.Min. Max.

Values

Tc = 25C

IF = 10A, VR = 400V

di/dt = 160A/s

33

- -

-

Rth2 404m Cth2 Ws/K

1.55m

5.23m

196m Cth3 83.3mRth3

K/W

96.1m Cth1Rth1

Typical Transient Thermal Characteristics

Symbol Value Unit UnitValueSymbol

4/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

0

20

40

60

80

100

120

140

160

180

0 50 100 150 200

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Ta = 25ºCSingle Pulse

Fig.1 Power Dissipation Derating Curve

Pow

er D

issi

patio

n :

PD

[W]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tra

nsie

nt T

herm

al R

esis

tanc

e : R

th [K

/W]

Pulse Width : PW [s]

0.1

1

10

100

0.1 1 10 100 1000

Operation in this area is limitedby RDS(ON)

PW = 10ms

PW = 100s

PW = 1ms

PW = 100msTa = 25ºCSingle Pulse

5/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I)

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Fig.5 Typical Output Characteristics(II)

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150°C Typical Output

Characteristics(I)

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

Fig.7 Tj = 150°C Typical Output

Characteristics(II)

Dra

in C

urre

nt :

ID

[A]

Drain - Source Voltage : VDS [V]

02468

10121416182022242628

0 2 4 6 8 10

Ta = 25ºCPulsed

VGS= 20VVGS= 18VVGS= 16V

VGS= 14V

VGS= 12V10V8V

0123456789

1011121314

0 1 2 3 4 5

Ta = 25ºCPulsed

VGS= 20VVGS= 18VVGS= 16V

VGS= 12V

VGS= 10V

VGS= 8V

VGS= 14V

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

0 2 4 6 8 10

Ta = 150ºCPulsed

VGS= 10V

VGS= 8V

VGS= 20VVGS= 18VVGS= 16VVGS= 14VVGS= 12V

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0 1 2 3 4 5

Ta = 150ºCPulsed

VGS= 8V

VGS= 10V

VGS= 20VVGS= 18VVGS= 16VVGS= 14VVGS= 12V

6/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

0.01

0.1

1

10

0.01 0.1 1 10

VDS = 10VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºCTa = -25ºC

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-50 0 50 100 150 200

VDS = VGSID = 3.3mA

Fig.8 Typical Transfer Characteristics (I)

Dra

in C

urre

nt :

ID

[A]

Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltagevs. Junction Temperature

Gat

e T

hres

hold

Vol

tage

: V

GS

(th)

[V]

Junction Temperature : Tj [°C]

Fig.11 Transconductance vs. Drain Current

Tra

nsco

nduc

tanc

e : g

fs[S

]

Drain Current : ID [A]

0.001

0.01

0.1

1

10

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºCTa= -25ºC

VDS = 10VPulsed

Fig.9 Typical Transfer Characteristics (II)

Dra

in C

urre

nt :

ID

[A]

Gate - Source Voltage : VGS [V]

0

2

4

6

8

10

12

14

16

18

20

22

24

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºCTa= -25ºC

VDS = 10VPulsed

7/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

0

0.1

0.2

0.3

0.4

0.5

0.6

6 8 10 12 14 16 18 20 22

ID = 10A

ID = 21A

Ta = 25ºCPulsed

0

0.05

0.1

0.15

0.2

0.25

0.3

-50 0 50 100 150 200

VGS = 18VPulsed

ID = 10A

ID = 20A

0.1

1

0.1 1 10 100

VGS = 18VPulsed

Ta = 150ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = -25ºC

Fig.12 Static Drain - Source On - StateResistance vs. Gate - Source Voltage

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[Ω

]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[Ω

]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - StateResistance vs. Drain Current

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Res

ista

nce

: RD

S(o

n)[Ω

]

Drain Current : ID [A]

8/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

0

5

10

15

20

25

0 200 400 600 800

Ta = 25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºCf = 1MHzVGS = 0V

0

5

10

15

20

0 10 20 30 40 50 60 70

Ta = 25ºCVDD =300VID = 10APulsed

Fig.15 Typical Capacitancevs. Drain - Source Voltage

Cap

acita

nce

: C

[pF

]

Drain - Source Voltage : VDS [V]

Fig.16 Coss Stored Energy

Cos

s S

tore

d E

nerg

y : E

OS

S[µ

J]

Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics

Sw

itchi

ng T

ime

: t [

ns]

Drain Current : ID [A]

Fig.18 Dynamic Input Characteristics

Gat

e -

Sou

rce

Vol

tage

: V

GS

[V]

Total Gate Charge : Qg [nC]

1

10

100

1000

10000

0.1 1 10 100

tf

td(on)

Ta = 25ºCVDD = 300VVGS = 18VRG = 0Ω

tr

td(off)

9/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

0

50

100

150

200

250

300

350

400

450

500

0 5 10 15 20 25 30

Ta = 25ºCVDD=300VVGS = 18V/0VRG = 0ΩL=500µH

Eon

Eoff

Fig.19 Typical Switching Lossvs. Drain - Source Voltage

Sw

itchi

ng E

nerg

y : E

[µ

J]

Drain - Source Voltage : VDS [V]

Fig.20 Typical Switching Lossvs. Drain Current

Sw

itchi

ng E

nerg

y : E

[µ

J]

Drain - Current : ID [A]

Fig.21 Typical Switching Lossvs. External Gate Resistance

Sw

itchi

ng E

nerg

y : E

[µ

J]

External Gate Resistance : RG [Ω]

0

10

20

30

40

50

60

70

80

90

100

110

120

0 100 200 300 400 500

Ta = 25ºCID=10AVGS = 18V/0VRG = 0ΩL=500µH Eon

Eoff

0

50

100

150

200

0 5 10 15 20 25 30

Ta = 25ºCVDD=300VID=10AVGS = 18V/0VL=500µH Eon

Eoff

10/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Electrical characteristic curves

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºCTa = -25ºC

10

100

1000

1 10 100

Ta = 25ºCdi / dt = 160A / µsVR = 400VVGS = 0VPulsed

Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage

Inve

rse

Dio

de

For

war

d C

urre

nt :

IS

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current

Rev

erse

Rec

over

y Ti

me

: trr

[ns]

Inverse Diode Forward Current : IS [A]

11/12 2017.07 - Rev.E

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

DatasheetSCT2120AF

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

VGS

IG(Const.)

VDS

D.U.T.

ID

RL

VDD

90%

90% 90%

10% 10%

50%10%50%

VGS

Pulse width

VDS

ton toff

trtd(on) tftd(off)

VGS

RG

VDS

D.U.T.

ID

RL

VDD

VG

VGS

Charge

Qg

Qgs Qgd

trr

Irr 100%

Irr

IF

0

Irr 90%

drr / dt

Irr 10%DRIVER MOSFET

RG

D.U.T. LIF

VDD

D.U.T.

VsurgeIrr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

DRIVER MOSFET

RG

D.U.T. LIF

VDD

Same type device as D.U.T.

D.U.T.

ID

12/12 2017.07 - Rev.E

R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

1)

2)

3)

4)

5)

6)

7)

8)

9)

10)

11)

12)

13)

DatasheetDatasheet

Notice – WE Rev.001© 2015 ROHM Co., Ltd. All rights reserved.

General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.