Data Sheet

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SCT3022ALN-channel SiC power MOSFET

Range of storage temperature Tstg -55 to +175 °C

Gate - Source voltage VGSS -4 to 22 V

Junction temperature Tj 175 °C

Tc = 100°C ID *1 65 A

Pulsed drain current ID,pulse *2 232 A

Continuous drain currentTc = 25°C ID

*1 93 A

Unit

Drain - Source voltage VDSS 650 V

Value

・Induction heating

・Motor drives

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

Tape width (mm) -

lApplicationBasic ordering unit (pcs) 30

・Solar invertersTaping code C11

・DC/DC convertersMarking SCT3022AL

・Switch mode power supplies

lInner circuit

lFeatures

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

lPackaging specifications5) Simple to drive

Type

Packing Tube6) Pb-free lead plating ; RoHS compliant

Reel size (mm) -

lOutline

VDSS 650V TO-247N

RDS(on) (Typ.) 22mW

ID 93A

PD 339W

(1) Gate (2) Drain (3) Source

*1 Body Diode

(1) (2) (3)

1/13 2016.06 - Rev.A

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Data SheetSCT3022AL

WGate input resistance RG f = 1MHz, open drain - 5 -

22 28.6

Tj = 125°C - 29 -

5.6 V

Static drain - source

on - state resistanceRDS(on)

*3

VGS = 18V, ID = 36A

mWTj = 25°C

Gate threshold voltage VGS (th) VDS = 10V, ID = 18.2mA 2.7 -

-

Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA

1 10

Tj = 150°C - 2 -

V

Zero gate voltage

drain currentIDSS

VDS = 650V, VGS = 0V

mATj = 25°C -

Drain - Source breakdown

voltageV(BR)DSS VGS = 0V, ID = 1mA 650 - -

UnitMin. Typ. Max.

Thermal resistance, junction - case RthJC - 0.34 0.44 C/W

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

lThermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

2/13 2016.06 - Rev.A

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Data SheetSCT3022AL

*1 Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%

*3 Pulsed

V

- 53 -

Gate plateau voltage V(plateau) VDD = 300V, ID = 36A - 9.6 -

nCGate - Source charge Qgs *3 ID = 36A - 31 -

Gate - Drain charge Qgd *3 VGS = 18V

Total gate charge Qg *3 VDD = 300V - 133 -

lGate Charge characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

mJ

Turn - off switching loss Eoff *3

- 201 -

Turn - on switching loss Eon *3 VDD = 300V, ID=36A

VGS = 18V/0V

RG = 0W L=100mH

*Eon includes diode

reverse recovery

- 252 -

-

tr *3 VGS = 18V/0V - 53 -

Turn - off delay time td(off) *3 RL = 17W - 61

52 -

pF

Turn - on delay time td(on) *3 VDD = 300V, ID = 18A - 25 -

nsRise time

Effective output capacitance,

energy relatedCo(er)

VGS = 0V

VDS = 0V to 300V- 303 -

-

Fall time tf *3 RG = 0W - 35

S

Input capacitance Ciss VGS = 0V - 2208 -

pFOutput capacitance Coss

Transconductance gfs *3 VDS = 10V, ID = 36A - 12.2 -

VDS = 500V - 118 -

Reverse transfer capacitance Crss f = 1MHz -

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

3/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

A

Qrr *3 - 146 - nC

Peak reverse recovery current Irrm *3 - 10 -

V

Reverse recovery time trr *3

IF = 36A, VR = 300V

di/dt = 1100A/ms

- 27 - ns

Reverse recovery charge

Forward voltage VSD *3 VGS = 0V, IS = 36A - 3.2 -

A

Inverse diode direct current,

pulsedISM

*2 - - 232 A

Inverse diode continuous,

forward currentIS

*1

Tc = 25°C

- - 93

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

4/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

0

50

100

150

200

250

300

350

400

0 50 100 150 200

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Ta = 25ºC Single Pulse

Fig.1 Power Dissipation Derating Curve

Pow

er

Dis

sip

ation

: P

D [

W]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tra

nsie

nt

Therm

al R

esis

tance :

Rth

[K/W

]

Pulse Width : PW [s]

0.1

1

10

100

1000

0.1 1 10 100 1000

Ta = 25ºC Single Pulse

PW = 10ms

PW = 100µs

PW = 1ms

PW = 100ms

Operation in this area is limited by RDS(ON)

5/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I)

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Fig.5 Typical Output Characteristics(II)

Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150ºC Typical Output Characteristics(I)

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Fig.7 Tj = 150ºC Typical Output Characteristics(II)

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Dra

in C

urr

ent

: I D

[A

]

0

10

20

30

40

50

60

70

80

90

0 2 4 6 8 10

Ta = 25ºC Pulsed

10V

VGS= 8V

16V

18V

14V

20V

12V

0

5

10

15

20

25

30

35

40

45

0 1 2 3 4 5

Ta = 25ºC Pulsed

VGS= 8V

10V

14V

16V

18V

20V

12V

0

10

20

30

40

50

60

70

80

90

0 2 4 6 8 10

Ta = 150ºC Pulsed

10V

VGS= 8V

18V

16V

20V

14V

12V

0

5

10

15

20

25

30

35

40

45

0 1 2 3 4 5

Ta = 150ºC Pulsed

10V

VGS= 8V

16V

14V

20V

18V

12V

6/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

Fig.8 Typical Transfer Characteristics (I)

Dra

in C

urr

ent

: I D

[A

]

Gate - Source Voltage : VGS [V]

Fig.9 Typical Transfer Characteristics (II)

Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltage vs. Junction Temperature

Gate

Thre

shold

Voltage :

V G

S(t

h) [V

]

Junction Temperature : Tj [ºC]

Fig.11 Transconductance vs. Drain Current

Tra

nsconducta

nce :

gfs [S

]

Drain Current : ID [A]

Dra

in C

urr

ent

: I D

[A

]

0.1

1

10

0.1 1 10

VDS = 10V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

0

1

2

3

4

5

6

-50 0 50 100 150 200

VDS = 10V ID = 18.2mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

0

10

20

30

40

50

60

70

80

90

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

7/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current

Drain Current : ID [A]

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

6 8 10 12 14 16 18 20 22

ID = 36A

ID = 62A

Ta = 25ºC Pulsed

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

-50 0 50 100 150 200

VGS = 18V

Pulsed

ID = 62A

ID = 36A

0.01

0.1

1 10 100

VGS = 18V Pulsed

Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

8/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

Fig.15 Typical Capacitance

vs. Drain - Source Voltage

Capacitance :

C [pF

]

Drain - Source Voltage : VDS [V]

Fig.16 Coss Stored Energy

Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics

Sw

itchin

g T

ime : t [

ns]

Drain Current : ID [A]

Fig.18 Dynamic Input Characteristics

Gate

- S

ourc

e V

oltage :

VG

S [V

]

Total Gate Charge : Qg [nC]

Coss S

tore

d E

nerg

y : E

OS

S [

mJ]

0

5

10

15

20

25

0 100 200 300 400

Ta = 25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºC f = 1MHz VGS = 0V

0

5

10

15

20

0 20 40 60 80 100 120 140

Ta = 25ºC VDD = 300V ID = 36A Pulsed

1

10

100

1000

10000

0.1 1 10 100

td(on)

td(off)

Ta = 25ºC VDD = 300V VGS = 18V

RG = 0W

Pulsed

tf

tr

9/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

Fig.19 Typical Switching Loss

vs. Drain - Source Voltage

Sw

itchin

g E

nerg

y : E

[mJ]

Drain - Source Voltage : VDS [V]

Fig.20 Typical Switching Loss

vs. Drain Current

Drain Current : ID [A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance

Sw

itchin

g E

nerg

y : E

[mJ]

External Gate Resistance : RG [W]

Sw

itchin

g E

nerg

y : E

[m

J]

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 20 40 60 80 100

Ta = 25ºC VDD=300V VGS = 18V/0V

RG=0W

L=100mH

Eon

Eoff

0

50

100

150

200

250

300

350

400

450

500

100 200 300 400 500

Ta = 25ºC ID=36A VGS = 18V/0V

RG=0W

L=100mH Eon

Eoff

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 5 10 15 20 25 30

Ta = 25ºC VDD=300V ID=36A VGS = 18V/0V

L=100mH

Eon

Eoff

10/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lElectrical characteristic curves

Fig.22 Inverse Diode Forward Current

vs. Source - Drain Voltage

Invers

e D

iode

Fo

rward

Curr

ent

: I S

[A

]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current

Inverse Diode Forward Current : IS [A]

Revers

e R

ecovery

Tim

e : t

rr [ns]

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

10

100

1000

1 10 100

Ta = 25ºC di / dt = 1100A / us VR = 300V VGS = 0V Pulsed

11/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

Vsurge Irr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

Same type device as

D.U.T.

D.U.T.

ID

12/13 2016.06 - Rev.A

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Data SheetSCT3022AL

lDimensions

TO-247N

13/13 2016.06 - Rev.A

R1102Bwww.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

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