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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SK3869 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Circuit Configuration
2SK3869
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
0.100 0.900 0.911 1.222
0.200 1.250 1.285 2.816
0.500 2.000 2.014 0.690
1.000 2.750 2.824 2.695
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V1
0Vdc
U3
2SK3869
V2
20Vdc
0
V3
0Vdc
V_V1
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V3)
0A
2A
4A
6A
8A
10A
12A
14A
16A
18A
20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
0.500 4.400 4.473 1.659
1.000 4.600 4.685 1.848
2.000 4.950 4.987 0.747
5.000 5.550 5.598 0.865
10.000 6.250 6.306 0.896
15.000 6.800 6.862 0.912
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VDS
0Vdc
VGS
10Vdc
U6
2SK3869
V2
0Vdc
0
V_VDS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=5A, VGS=10V Measurement Simulation Error (%)
RDS (on) 0.550 0.550 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
-
+W1
ION = 0uAIOFF = 1mAW
TD = 0TF = 10n
PW = 600uPER = 1000u
I1 = 0I2 = 1mTR = 10n
V1
360
I2
10DbreakD2
U9 2SK3869
Time*1mA
0 8n 16n 24n 32n 40n
V(W1:2)
0V
4V
8V
12V
16V
20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=360V,ID= 10A ,VGS=10V
Measurement Simulation Error (%)
Qgs 8 nC 7.973 nC -0.337
Qgd 12 nC 12.02 nC 0.225
Qg 28 nC 25.67 nC -8.300
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 1500.000 1490.000 -0.666
0.200 1300.000 1320.000 1.538
0.500 1150.000 1100.000 -4.347
1.000 800.000 810.000 1.250
2.000 600.000 600.000 0.000
5.000 350.000 355.000 1.428
10.000 270.000 280.000 3.703
20.000 108.000 103.000 -4.629
50.000 76.000 75.000 -1.315
100.000 53.000 54.000 1.886
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
R2
50
0
RL
16
V2
TD = 2u
TF = 7nPW = 100uPER = 200u
V1 = 0
TR = 6n
V2 = 20
L2
50n
L1
30nH
R1
50
3
VDD
200Vdc
2
U2
2SK3869
Time
1.6us 1.8us 2.0us 2.2us 2.4us
V(2) V(3)/20
0V
2V
4V
6V
8V
10V
12V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= 5A, VDD= 200V VGS=0/10V
Measurement Simulation Error(%)
ton 60.000 ns 60.046 ns 0.0766
VGS
ID
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U10
2SK3869
V3
0Vdc
0
V2
0
V1
0
V_V2
0V 10V 20V 30V 40V 50V
I(V3)
0A
4A
8A
12A
16A
20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= 4.5V
5.5V
6 V
6.25 V
6.5 V
6.75 V
10
15
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U4
2SK3869
0
R1
0.01m
V1
0Vdc
V_V1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
100mA
1.0A
10A
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VDS(V)
Measurement VDS(V)
Simulation %Error
0.100 0.640 0.641 0.156
0.200 0.670 0.663 -1.045
0.500 0.70 0.698 -0.286
1.000 0.720 0.730 1.389
2.000 0.780 0.775 -0.641
5.000 0.870 0.863 -0.805
10.000 0.980 0.971 -0.918
20.000 1.160 1.150 -0.862
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.20 us 1.207 us 0.608
trb 1.12 us 0.1609 us -85.633
trr 2.32 us 1.368 us -41.025
V21
TD = 1.8uTF = 10n
PW = 20uPER = 50u
V1 = -9.40
TR = 10n
V2 = 10.68
0
U8 2SK3869
N07543
RL21
50
Time
14us 16us 18us 20us 22us 24us 26us 28us 30us 32us
I(RL21)
-400mA
0A
400mA
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference
Trj=1.20(us) Trb=1.12(us) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
V_V1
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
0
OpenR1
0.01m
U5
2SK3869
V1
0Vdc
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference